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    onsemi NGTB30N60L2WG

    IGBT 600V 30A TO247
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    NGTB30N60L2WG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NGTB30N60L2WG ON Semiconductor Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 30A TO247 Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2308B NGTB30N60L2WG N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE sat ;1.4V http://onsemi.com Features Electrical Connection • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) • IGBT IC=100A (Tc=25°C) • IGBT tf=80ns typ. • Low switching loss in higher frequency applications


    Original     		PDF ENA2308B NGTB30N60L2WG A2308-8/8

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN*A2308 NGTB30N60L2WG Advance Information http://onsemi.com N-Channel IGBT 600V, 100A, VCE sat ;1.4V TO-247-3L with Low VF Switching Diode Electrical Connection C(2) Features • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) • IGBT tf=80ns typ.


    Original     		PDF A2308 NGTB30N60L2WG O-247-3L 340AM A2308-8/8

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2308A NGTB30N60L2WG N-Channel IGBT 600V, 30A, VCE sat ;1.4V, TO-247-3L with Low VF Switching Diode Features http://onsemi.com Electrical Connection • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V)  IGBT IC=100A (Tc=25C)  IGBT tf=80ns typ.


    Original     		PDF ENA2308A NGTB30N60L2WG O-247-3L A2308-8/8