Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NF MARKING TRANSISTOR Search Results

    NF MARKING TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54F139/BEA Rochester Electronics LLC 54F139 - Decoder/Driver, F/FAST Series, Inverted Output, TTL, CDIP16 - Dual marked (M38510/33702BEA) Visit Rochester Electronics LLC Buy
    54F151/BEA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) Visit Rochester Electronics LLC Buy
    54F151/BFA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDFP16 - Dual marked (M38510/33901BFA) Visit Rochester Electronics LLC Buy
    54F157/BEA Rochester Electronics LLC Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33903BEA) Visit Rochester Electronics LLC Buy
    54F153/BEA Rochester Electronics LLC 54F153 - Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33902BEA) Visit Rochester Electronics LLC Buy

    NF MARKING TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING SY SOT23

    Abstract: MARKING sg SOT23 2SA1162 2SC2712 MARKING SO
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1162 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. . Small Package. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG


    Original     		PDF OT-23 2SA1162 2SC2712. -100mA -10mA MARKING SY SOT23 MARKING sg SOT23 2SA1162 2SC2712 MARKING SO

    Untitled

    Abstract: No abstract text available
    Text: MT3S22P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S22P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF = 1.5dB typ. (@f=1GHz) • High Gain: |S21e| = 10.5dB (typ.) (@f=1GHz) 2 Marking


    Original     		PDF MT3S22P SC-62

    MMBT6428

    Abstract: mmbth10 KST2484 KST5086 KST5088 KST5089 KST6428 MMBT2484 MMBT5086 MMBT5088
    Text: Surface Mount Low Noise Transistors Part No., Marking Code and Polarity NPN hFE NF Max. Condition Frequency PNP dB MMBT6428 KST6428 MMBT6429 MMBT2484 KST2484 MMBT5088 KST5088 MMBT5089 KST5089 1K 1K 1L 1U 1U 1Q 1Q 1R 1R MMBT5086 KST5086 MMBT5087 TMPT5087


    Original     		PDF MMBT6428 KST6428 MMBT6429 MMBT2484 KST2484 MMBT5088 KST5088 MMBT5089 KST5089 MMBT5086 MMBT6428 mmbth10 KST2484 KST5086 KST5088 KST5089 KST6428 MMBT2484 MMBT5086 MMBT5088

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1162 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP 3 FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. . Small Package. 1 2 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG


    Original     		PDF OT-23 2SA1162 2SC2712. -100mA -10mA

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SC3838 NPN EPITAXIAL PLANAR TRANSISTOR High-Frequency Amplifier Transistor FEATURES *High transition frequency. *Small rbb’•Cc and high gain. *Small NF. 2 MARKING 1 3 AD SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER


    Original     		PDF 2SC3838 OT-23 QW-R206-052

    MT3S46T

    Abstract: No abstract text available
    Text: MT3S46T TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S46T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES • Low Noise Figure :NF=1.2dB @f=2GHz · High Gain:|S21e| =11.5dB (@f=2GHz) 2 Marking 3 R5 1 2 TESM


    Original     		PDF MT3S46T MT3S46T

    MT4S101T

    Abstract: No abstract text available
    Text: MT4S101T TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S101T TENTATIVE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES 1.2±0.05 Low Noise Figure :NF=0.8dB @f=2GHz • High Gain:|S21e| =17.0dB (@f=2GHz) 0.9±0.05 2 1 1.2±0.05 Marking


    Original     		PDF MT4S101T MT4S101T

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SC3838 NPN EPITAXIAL PLANAR TRANSISTOR High-Frequency Amplifier Transistor FEATURES *High transition frequency. *Small rbb’•Cc and high gain. *Small NF. 2 MARKING 1 3 AD SOT-23 1: EMITTER 2: BASE 3: COLLECTOR *Pb-free plating product number: 2SC3838L


    Original     		PDF 2SC3838 OT-23 2SC3838L QW-R206-052

    Untitled

    Abstract: No abstract text available
    Text: MT3S22P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S22P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.5dB Typ. (@f=1GHz) • High Gain: |S21e|2=10.5dB(Typ.) (@f=1GHz) Marking PW-Mini


    Original     		PDF MT3S22P SC-62

    MT4S100T

    Abstract: No abstract text available
    Text: MT4S100T TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S100T TENTATIVE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES 1.2±0.05 Low Noise Figure :NF=0.72dB @f=2GHz • High Gain:|S21e| =17.0dB (@f=2GHz) 0.9±0.05 2 1 1.2±0.05 Marking


    Original     		PDF MT4S100T MT4S100T

    Untitled

    Abstract: No abstract text available
    Text: MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.45dB typ. (@f=1GHz) • High Gain: |S21e| =11dB (typ.) (@f=1GHz) 2 Marking M U


    Original     		PDF MT3S20P SC-62

    Untitled

    Abstract: No abstract text available
    Text: MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.45dB Typ. (@f=1GHz) • High Gain: |S21e|2=11dB(Typ.) (@f=1GHz) Marking PW-Mini


    Original     		PDF MT3S20P SC-62

    marking AD

    Abstract: No abstract text available
    Text: UTC 2SC3838 NPN EPITAXIAL PLANAR TRANSISTOR High-Frequency Amplifier Transistor FEATURES *High transition frequency. *Small rbb’•Cc and high gain. *Small NF. 2 1 MARKING 3 AD SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER


    Original     		PDF 2SC3838 OT-23 500MHz 500MHz, QW-R206-052 marking AD

    Untitled

    Abstract: No abstract text available
    Text: MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB typ. (@ f=1 GHz) • High Gain:|S21e| =12 dB (typ.) (@ f=1 GHz) 2 Marking


    Original     		PDF MT3S111 O-236 SC-59

    MT3S20P

    Abstract: No abstract text available
    Text: MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.45dB Typ. (@f=1GHz) • High Gain: |S21e|2=11dB(Typ.) (@f=1GHz) Marking M U PW-Mini


    Original     		PDF MT3S20P SC-62 MT3S20P

    mt3s111

    Abstract: No abstract text available
    Text: MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB typ. (@ f=1 GHz) • High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) Marking


    Original     		PDF MT3S111 O-236 SC-59 mt3s111

    2SA1162

    Abstract: 2SC2712
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SA1162 TRANSISTOR PNP FEATURES z Low noise : NF= 1dB(Typ.),10dB (Max.) z Complementary to 2SC2712. z Small Package. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG


    Original     		PDF OT-23-3L OT-23-3L 2SA1162 2SC2712. -100mA -10mA 2SA1162 2SC2712

    MT3S22P

    Abstract: No abstract text available
    Text: MT3S22P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S22P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.5dB Typ. (@f=1GHz) • High Gain: |S21e|2=10.5dB(Typ.) (@f=1GHz) Marking T 5 PW-Mini


    Original     		PDF MT3S22P SC-62 MT3S22P

    MT3S150P

    Abstract: TOSHIBA MICROWAVE AMPLIFIER
    Text: MT3S150P TOSHIBA Transistor GaAs NPN Epitaxial Mesa Type MT3S150P VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm FEATURES • Low Noise Figure: NF=0.95dB @f=1GHz • High Gain: |S21e| =11.5dB (@f=1GHz) 2 Marking Ｍ Ｐ Maximum Ratings (Ta = 25°C)


    Original     		PDF MT3S150P MT3S150P TOSHIBA MICROWAVE AMPLIFIER

    Untitled

    Abstract: No abstract text available
    Text: MT3S150P TOSHIBA Transistor GaAs NPN Epitaxial Mesa Type MT3S150P VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm FEATURES • Low Noise Figure: NF=0.95dB @f=1 GHz • High Gain: |S21e|2=11.5dB (@f=1 GHz) Marking Ｍ Ｐ Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF MT3S150P SC-62

    Untitled

    Abstract: No abstract text available
    Text: MT3S21P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S21P VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm FEATURES • Low-Noise Figure: NF=1.55 dB typ. (@f=1 GHz) • High Gain: |S21e|2=11 dB (typ.) (@f=1 GHz) Marking T 2 PW-Mini


    Original     		PDF MT3S21P SC-62

    MT3S36T

    Abstract: No abstract text available
    Text: MT3S36T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S36T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES • Low Noise Figure :NF=1.3dB @f=2GHz · High Gain:|S21e| =12.5dB (@f=2GHz) 2 Marking 3 Q3 1 2 TESM Maximum Ratings (Ta = 25°C)


    Original     		PDF MT3S36T 0022g MT3S36T

    16 SOT-143 MOTOROLA

    Abstract: No abstract text available
    Text: SOT-143 Devices Maximum die size 25 mil x 25 mil CASE318A-05 RF Transistors Maximum Ratings Galn-Bandwidth NF @ <§ Device MRFS211LT1 <17> MRF9331LT1 MRF9011LT1 MRF9411LT1 MRF9411BLT1 MRF9511LT1 MRF0211LT1 MRF5711LT1 f Gain @ f Marking h Typ GHz •c mA Typ


    OCR Scan     		PDF OT-143 CASE318A-05 MRFS211LT1 MRF9331LT1 MRF9011LT1 MRF9411LT1 MRF9411BLT1 MRF9511LT1 MRF0211LT1 MRF5711LT1 16 SOT-143 MOTOROLA

    N-Channel JFET FETs

    Abstract: P-Channel RF Amplifier jfets MMBF5457LT1 MMBF5484LT1
    Text: SOT-23 TRANSISTORS continued Unipolar (Field Effect) Transistors (JFETs) RF JFETs The following is a list of surface mount FETs which are intended for VHF/UHF RF amplifier applications. Pinout: 1-Drain, 2-Source, 3-Gate NF Device Y»s @ V ds Marking dB Typ


    OCR Scan     		PDF OT-23 MMBFJ309LT1 MMBFJ310LT1 MMBFU310LT1 MMBF4416LT1 MMBF5484LT1 MMBFS486LT1 MMBF48S6LT1 MMBF4391LT1 MMBF4860LT1 N-Channel JFET FETs P-Channel RF Amplifier jfets MMBF5457LT1