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    NF 742 Search Results

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    NF 742 Price and Stock

    Taitien Electronics Co Ltd PYKTDCJANF-74.250000

    XTAL OSC XO 74.2500MHZ CMOS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PYKTDCJANF-74.250000 Reel 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.566
    • 10000 $1.566
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    Panasonic Electronic Components ERJ-6ENF2742V

    Thick Film Resistors - SMD 0805 27.4Kohms 1% AEC-Q200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ERJ-6ENF2742V 72,959
    • 1 $0.11
    • 10 $0.035
    • 100 $0.021
    • 1000 $0.018
    • 10000 $0.011
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    Panasonic Electronic Components ERJ-8ENF3742V

    Thick Film Resistors - SMD 1206 37.4Kohms 1% AEC-Q200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ERJ-8ENF3742V 54,539
    • 1 $0.12
    • 10 $0.042
    • 100 $0.026
    • 1000 $0.023
    • 10000 $0.015
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    Panasonic Electronic Components ERJ-6ENF1742V

    Thick Film Resistors - SMD 0805 17.4Kohms 1% AEC-Q200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ERJ-6ENF1742V 52,040
    • 1 $0.11
    • 10 $0.035
    • 100 $0.021
    • 1000 $0.018
    • 10000 $0.01
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    Panasonic Electronic Components ERJ-8ENF1742V

    Thick Film Resistors - SMD 1206 17.4Kohms 1% AEC-Q200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ERJ-8ENF1742V 50,341
    • 1 $0.17
    • 10 $0.061
    • 100 $0.038
    • 1000 $0.023
    • 10000 $0.015
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    NF 742 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nf 742

    Abstract: 680/nf 742
    Text: Ceramic Capacitors Leaded multilayer, Mono-axial series Dielectric Series 2222 . . Rated DC voltage Capacitance range pF/nF NPO X7R Z5U 740 . 50 V 741 . 50 V 742 . 50 V 10 pF 12 15 18 22 27 33 39 47 56 68 82 100 120 150 180 220 270 330


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    Untitled

    Abstract: No abstract text available
    Text: Mini-Circuits - Specification for Amplifier - ZFL-1000GH Amplifier print this page ZFL-1000GH Frequency MHz f L - fU GAIN, dB Min. Maximum Power, dBm Dynamic Range VSWR DC Power Output 1 dB Comp. Max. Flatness Input (no damage) NF dB Typ. 10-1200 24 ±1.50


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    PDF ZFL-1000GH

    npn UHF transistor 2N5179

    Abstract: No abstract text available
    Text: 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB max @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 • 1 Characterized with S-Parameters


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    PDF 2N5179 npn UHF transistor 2N5179

    Untitled

    Abstract: No abstract text available
    Text: plerowTM APM0742-P29 High OIP3 Medium Power Amplifier Module Features Description • S21 = 34.9 dB @ 698 MHz = 33.1 dB @ 787 MHz · NF of 6.6 dB over Frequency · Unconditionally Stable · High OIP3 @ Low Current C o u pl er amplifier mini-module for such application band in


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    PDF APM0742-P29 40x40mm 10x10mm) APM0742

    2N5179

    Abstract: npn UHF transistor 2N5179 rf power amplifier transistor with s-parameters
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10


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    PDF 2N5179 2N5179 npn UHF transistor 2N5179 rf power amplifier transistor with s-parameters

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10


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    PDF 2N5179 2N5179

    LB 1639

    Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
    Text: SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz


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    PDF UPA801T NE856 100mA UPA801T 24-Hour LB 1639 transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236

    LFCSP

    Abstract: jc212
    Text: FEATURES 3 dB bandwidth of 6 GHz AV = 6 dB Pin strappable gain adjust: 6 dB, 12 dB, and 15.5 dB Gain range from 0 dB to 15.5 dB using two external resistors Differential or single-ended input to differential output Low noise input stage: NF = 8.7 dB at 15.5 dB gain


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    PDF ADL5565 ADL5565ACPZ-R7 ADL5565-EVALZ 1-26-2012-A 16-Lead CP-16-27 ADL5565 D09959-0-6/12 LFCSP jc212

    2N5179

    Abstract: ic 741 datasheet pdf of 741 ic IC 741 MSC1305 transistor 2N5179 datasheet of ic 741 ic 741 equivalent uA 741 IC data sheet npn UHF transistor 2N5179
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc


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    PDF 2N5179 MSC1305 2N5179 ic 741 datasheet pdf of 741 ic IC 741 transistor 2N5179 datasheet of ic 741 ic 741 equivalent uA 741 IC data sheet npn UHF transistor 2N5179

    2N5179

    Abstract: transistor 2N5179 pdf of 741 ic 420 NPN Silicon RF Transistor npn UHF transistor 2N5179
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc


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    PDF 2N5179 2N5179 transistor 2N5179 pdf of 741 ic 420 NPN Silicon RF Transistor npn UHF transistor 2N5179

    jc212

    Abstract: No abstract text available
    Text: FEATURES 3 dB bandwidth of 6 GHz AV = 6 dB Pin strappable gain adjust: 6 dB, 12 dB, and 15.5 dB Gain range from 0 dB to 15.5 dB using two external resistors Differential or single-ended input to differential output Low noise input stage: NF = 8.7 dB at 15.5 dB gain


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    PDF ADL5565 ADL5565ACPZ-R7 ADL5565-EVALZ 16-Lead 1-26-2012-A CP-16-27 ADL5565 D09959-0-4/12 jc212

    Untitled

    Abstract: No abstract text available
    Text: plerowTM ALN0742WT Internally Matched LNA Module Features Description • S21 = 19.5 dB @ 698 MHz = 18.5 dB @ 787 MHz · NF of 0.70 dB over Frequency · Unconditionally Stable · Single 5V Supply · High OIP3 @ Low Current C o u pl er The plerowTM ALN-series is the compactly designed surface-mount


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    PDF ALN0742WT 25x25mm 10x10mm)

    Untitled

    Abstract: No abstract text available
    Text: plerowTM APM0743-P29 Low Noise & High OIP3 Medium Power Amplifier Module Features Description • S21 = 50.6 dB @ 698 MHz = 49.4 dB @ 787 MHz · NF of 1.0 dB over Frequency · Unconditionally Stable · High OIP3 @ Low Current C o u pl er C o u pl er · Single 5V Supply


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    PDF APM0743-P29 40x40mm 13x13mm) APM0743

    LB 1639

    Abstract: UPA801T BF 830 transistor UPA801T-T1-A NE856 S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA


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    PDF UPA801T NE856 100mA UPA801T LB 1639 BF 830 transistor UPA801T-T1-A S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem

    Untitled

    Abstract: No abstract text available
    Text: FUNCTIONAL BLOCK DIAGRAM FEATURES 3 dB bandwidth of 6 GHz AV = 6 dB Pin strappable gain adjust: 6 dB, 12 dB, and 15.5 dB Gain range from 0 dB to 15.5 dB using two external resistors Differential or single-ended input to differential output Low noise input stage: NF = 8.7 dB at 15.5 dB gain


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    PDF 16-Lead CP-16-27) ADL5565ACPZ-R7 ADL5565-EVALZ CP-16-27 ADL5565 D09959-0-6/12

    Untitled

    Abstract: No abstract text available
    Text: plerowTM ALN0742 Internally Matched LNA Module Features Description • S21 = 37.6 dB @ 698 MHz = 36.4 dB @ 787 MHz · NF of 0.65 dB over Frequency · Unconditionally Stable · Single 5V Supply · High OIP3 @ Low Current C o u pl er C o u pl er The plerowTM ALN-series is the compactly designed surface-mount


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    PDF ALN0742 25x25mm 13x13mm)

    Untitled

    Abstract: No abstract text available
    Text: plerowTM ALN0742AT Internally Matched LNA Module Features Description • S21 = 19.2 dB @ 698 MHz = 18.8 dB @ 787 MHz · NF of 0.8 dB over Frequency · Unconditionally Stable · Single 5V Supply · High OIP3 @ Low Current C o u pl er C o u pl er The plerowTM ALN-series is the compactly designed surface-mount


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    PDF ALN0742AT 25x25mm 10x10mm)

    Untitled

    Abstract: No abstract text available
    Text: Mini-Circuits - Specification for Amplifier - ZHL-2-12 Amplifier print this page ZHL-2-12 Frequency MHz fL - fU GAIN, dB Min. Max. Flatness Maximum Power, dBm Dynamic Range DC Power Min. Input no damage NF dB Typ. 10-1200 24 ±1.00 +29.00 +10.00 4.00 Lw=low range(fL to fU/2) U=upper range(fU/2 to fU)


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    PDF ZHL-2-12

    Untitled

    Abstract: No abstract text available
    Text: plerowTM ALN0743 Internally Matched LNA Module Features Description • S21 = 37.6 dB @ 698 MHz = 36.4 dB @ 787 MHz · NF of 0.7 dB over Frequency · Unconditionally Stable · Single 5V Supply · High OIP3 @ Low Current C o u pl er C o u pl er The plerowTM ALN-series is the compactly designed surface-mount


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    PDF ALN0743 25x25mm 13x13mm)

    C635

    Abstract: T1EB UCA0 C634 BCX73
    Text: NPISI-Transistoren für NF-Treiber- und Endstufen B CX 73 B CX 74 BCX 73 und BCX 74sind epitaktische NPN-Silizium-Planar-Transistoren im Kunststoffgehäuse 10 A3 DIN 41 868 ähnlich S O T -3 0 . Die Transistoren sind für den Einsatz in NF-Treiber- und Endstufen, sowie für Schalteranwendungen geeignet. Als Komplementär-Transistoren dazu


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    PDF 74sind OT-30) Q62702- -C634- -C635- C635 T1EB UCA0 C634 BCX73

    Untitled

    Abstract: No abstract text available
    Text: BUZ 172 I nf ineon tachnologies SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type Vds b flDS on Package Ordering Code BUZ 172 -100 V -5.5 A 0.6 £2 TO-220 AB C67078-S1451-A2 Maximum Ratings Parameter Symbol Continuous drain current


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    PDF O-220 C67078-S1451-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    TRANSISTOR nf 842

    Abstract: D 843 Transistor transistor su 312
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ±0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz 1.25 ± 0.1 HIGH GAIN:


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    PDF NE856 100mA UPA801T UPA801T UPA801T-T1 24-Hour TRANSISTOR nf 842 D 843 Transistor transistor su 312

    Untitled

    Abstract: No abstract text available
    Text: n I I w l I I W W SURFACE MOUNT TANTALUM CHIPS THE LEADER IN TANTALUM CAPACITORS Type LSR FEATURES • Meets or exceeds EIA 535 BAAC and IECQ standards QC300801/US0001, IS - 28 • Pre-conditioned, surge current tested for maximum robustness • Capacitance range: 10 |xf to 330 nf


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    PDF QC300801/US0001, NMCOS012

    TRANSISTOR nf 842

    Abstract: TRANSISTOR c 5578 B TRANSISTOR c 5578 TRANSISTOR 5578 TRANSISTOR 534
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz HIGH GAIN: IS2 1 EI2 = 9.0 dB TYP at 1 GHz


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    PDF NE856 100mA UPA801T UPA801T UPA801T-T1 TRANSISTOR nf 842 TRANSISTOR c 5578 B TRANSISTOR c 5578 TRANSISTOR 5578 TRANSISTOR 534