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JRH Electronics 630B007NF034H CONNECTOR BACKSHELL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	630B007NF034H	Bulk	47		1	1 $1774.37 10 $1774.37 100 $1774.37 1000 $1774.37 10000 $1774.37	Buy Now
Panduit Corp FXTRP8NUFSNF034 OM3 12-FIBER ROUND HARNESS CABLE
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DigiKey	FXTRP8NUFSNF034	Bulk			1	1 $707.48 10 $707.48 100 $707.48 1000 $707.48 10000 $707.48	Buy Now
Avnet Americas	FXTRP8NUFSNF034	Bulk			1	1 $679.25 10 $679.25 100 $679.25 1000 $679.25 10000 $679.25	Buy Now
Sager	FXTRP8NUFSNF034				1	1 $749.48 10 $740.34 100 $740.34 1000 $740.34 10000 $740.34	Buy Now
Panduit Corp FZTRP8NUFSNF034 OM4 12-FIBER ROUND HARNESS CABLE
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DigiKey	FZTRP8NUFSNF034	Bulk			1	1 $810.04 10 $810.04 100 $810.04 1000 $810.04 10000 $810.04	Buy Now
Avnet Americas	FZTRP8NUFSNF034	Bulk			1	1 $777.71 10 $777.71 100 $777.71 1000 $777.71 10000 $777.71	Buy Now
Sager	FZTRP8NUFSNF034				1	1 $858.12 10 $847.66 100 $847.66 1000 $847.66 10000 $847.66	Buy Now
Panduit Corp FXTRP8NUSSNF034 OM3 12-FIBER ROUND HARNESS CABLE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FXTRP8NUSSNF034	Bulk			1	1 $707.48 10 $707.48 100 $707.48 1000 $707.48 10000 $707.48	Buy Now
Avnet Americas	FXTRP8NUSSNF034	Bulk			1	1 $679.25 10 $679.25 100 $679.25 1000 $679.25 10000 $679.25	Buy Now
Sager	FXTRP8NUSSNF034				1	1 $749.48 10 $740.34 100 $740.34 1000 $740.34 10000 $740.34	Buy Now
Panduit Corp FW2ERQ1Q1NNF034 OM5+ SIG CORE 2F 1.6MM OFNR PP
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DigiKey	FW2ERQ1Q1NNF034	Bulk			1	1 $91.31 10 $91.31 100 $91.31 1000 $91.31 10000 $91.31	Buy Now
Avnet Americas	FW2ERQ1Q1NNF034	Bulk			1	1 $82.66 10 $82.66 100 $82.66 1000 $82.66 10000 $82.66	Buy Now

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NF 034 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
npn UHF transistor 2N5179 Abstract: No abstract text available Text: 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB max @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 • 1 Characterized with S-Parameters	Original	PDF	2N5179 npn UHF transistor 2N5179
transistor NEC D 587 Abstract: transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586 Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1±0.1 • Low Voltage Use 1.25±0.1 • Low Cob : 0.9 pF TYP. Emitter to Base Voltage	Original	PDF	2SC4885 transistor NEC D 587 transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586
2N5179 Abstract: npn UHF transistor 2N5179 rf power amplifier transistor with s-parameters Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10	Original	PDF	2N5179 2N5179 npn UHF transistor 2N5179 rf power amplifier transistor with s-parameters
Untitled Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10	Original	PDF	2N5179 2N5179
ALM-1106 Abstract: GPS lna gps to microcontroller 4350B ALM1106 LLP1005-FH10NC LLP1005-FH4N7NC LLP1005-FH5N6C RO4350B GPS RECEIVER L10 Text: ALM-1106 as a 1.575 GHz GPS Low Noise Amplifier Application Note 5240 Introduction Many of today’s GPS receiver LNA designs are based on discrete transistors rather than using MMICs because designs using discrete transistors result in amplifiers with lower Noise Figure NF . Figure 1 shows a typical GPS LNA	Original	PDF	ALM-1106 ALM-1106 5989-3560EN AV02-2039EN GPS lna gps to microcontroller 4350B ALM1106 LLP1005-FH10NC LLP1005-FH4N7NC LLP1005-FH5N6C RO4350B GPS RECEIVER L10
2N5179 Abstract: ic 741 datasheet pdf of 741 ic IC 741 MSC1305 transistor 2N5179 datasheet of ic 741 ic 741 equivalent uA 741 IC data sheet npn UHF transistor 2N5179 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc	Original	PDF	2N5179 MSC1305 2N5179 ic 741 datasheet pdf of 741 ic IC 741 transistor 2N5179 datasheet of ic 741 ic 741 equivalent uA 741 IC data sheet npn UHF transistor 2N5179
2N5179 Abstract: transistor 2N5179 pdf of 741 ic 420 NPN Silicon RF Transistor npn UHF transistor 2N5179 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc	Original	PDF	2N5179 2N5179 transistor 2N5179 pdf of 741 ic 420 NPN Silicon RF Transistor npn UHF transistor 2N5179
TRANSISTOR D434 Abstract: d1859 transistor D1585 NE674 d1859 D588 transistor d998 transistor transistor D467 d638 transistor transistor D313 Text: PRELIMINARY DATA SHEET GaAs MES FET NE674 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 1.4 dB TYP. at f = 12 GHz x High associated gain Ga = 10 dB TYP. at f = 12 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm	Original	PDF	NE674 NE67400 NE67483B NE67483B] NE67400] TRANSISTOR D434 d1859 transistor D1585 NE674 d1859 D588 transistor d998 transistor transistor D467 d638 transistor transistor D313
C10535E Abstract: NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm ORDERING INFORMATION	Original	PDF	NE713 NE71300-N NE71300-M NE71300-L NE71383B NE71383B] C10535E NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B
C61 capacitor Abstract: r100 resistor PHILIPS capacitors 0402 CC2420EM CC2400EB SFM-110-02-S-D-A-K-TR C106 capacitor samtec connector 1.25mm P1 SMD smd marking 2x5 Text: User Manual Rev. 1.0 SmartRF CC2420DK Development Kit Chipcon AS, Gaustadalléen 21, NO-0349 Oslo, Norway. Tel: +47 22 95 85 45, fax: +47 22 95 85 46. E-mail: support@chipcon.com Table of contents INTRODUCTION .3	Original	PDF	CC2420DK NO-0349 CC2420 CC2420EM. CC2420EM C61 capacitor r100 resistor PHILIPS capacitors 0402 CC2420EM CC2400EB SFM-110-02-S-D-A-K-TR C106 capacitor samtec connector 1.25mm P1 SMD smd marking 2x5
SFM-110-02-S-D-A Abstract: SFM-110-02-S-D-A-K-TR smd marking 2x5 CC2400EB tfm-110 r100 resistor CC2400EM SMD L81 Samsung tantal tfm-110-02-s-d-a Text: User Manual Rev. 1.1 SmartRF CC2400DK Development Kit Chipcon AS, Gaustadalléen 21, NO-0349 Oslo, Norway. Tel: +47 22 95 85 45, fax: +47 22 95 85 46. E-mail: support@chipcon.com Table of contents INTRODUCTION .3	Original	PDF	CC2400DK NO-0349 D-74379 D-83022 SFM-110-02-S-D-A SFM-110-02-S-D-A-K-TR smd marking 2x5 CC2400EB tfm-110 r100 resistor CC2400EM SMD L81 Samsung tantal tfm-110-02-s-d-a
CC1020 PA LNA Abstract: HC-49 SMD CONN10M c_2p2_0402_np0_c_50 c40 capacitor 33N04 CC1020EMX-433 12N04 smd transistor bc846 smd diode L23 Text: User Manual Rev. 1.1 SmartRF CC1020/1070DK Development Kit Chipcon AS, Gaustadalléen 21, NO-0349 Oslo, Norway. Support tel. +47 22 95 85 45, fax: +47 22 95 85 46. E-mail: support@chipcon.com Table of Contents: INTRODUCTION .3	Original	PDF	CC1020/1070DK NO-0349 CC1020EB CC1020 PA LNA HC-49 SMD CONN10M c_2p2_0402_np0_c_50 c40 capacitor 33N04 CC1020EMX-433 12N04 smd transistor bc846 smd diode L23
C106 capacitor Abstract: r120 Resistor 18p06 C103 C106 CC1050 CT52 Capacitor Tantal SMD TANTAL R HC-49 SMD Text: User Manual Rev. 1.11 SmartRF CC1050DK Development Kit Chipcon AS, Gaustadalléen 21, N-0349 Oslo, Norway. Tel: +47 22 95 85 45, fax: +47 22 95 85 46. E-mail: support@chipcon.com Table of contents INTRODUCTION .3	Original	PDF	CC1050DK N-0349 C106 capacitor r120 Resistor 18p06 C103 C106 CC1050 CT52 Capacitor Tantal SMD TANTAL R HC-49 SMD
C1000 Abstract: CC1000 10K-0603 HC-49 SMD cc1000dk Text: User Manual Rev. 2.11 SmartRF CC1000DK Development Kit Chipcon AS, Gaustadalléen 21, N-0349 Oslo, Norway. Support tel. +47 22 95 85 45, fax: +47 22 95 85 46. E-mail: support@chipcon.com Table of contents: INTRODUCTION .3	Original	PDF	CC1000DK N-0349 C1000 CC1000 10K-0603 HC-49 SMD

NEC 3536 Abstract: No abstract text available Text: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz •	OCR Scan	PDF	NE76118 NE76118 NE76118-T1 NE76118-T2 NEC 3536
TC236 Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES Excellent Low NF in Low Frequency Band 2 .1± 0.1 Low Voltage Use 1.25±0.1 Low Cob : 0 .9 pF T Y P . Low Noise Voltage : 90 mV TYP.	OCR Scan	PDF	2SC4885 SC-70 CO193 TC236
063 793 Abstract: transistor v63 Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain	OCR Scan	PDF	NE34018 NE34018 WS60-00-1 IR30-00-3 063 793 transistor v63
2n h 2222a Abstract: transistor 2222a to-92 transistor 2222a transistor 2n 2222 2n 2222A to-92 npn mml 600 pnp 2n 2222 transistor 2N917 33T4 Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 32E D • 23033=14 0000012 5 ■ PROFESSIONAL GRADE APPLICATIONS " VCEO VCBO VEBO Volts Volts Volts min min min Device hFE at bias min/max IC VCE ICM PTA mA Volts mA mW max max PTC W max Cob ts NF ICBO VCE sat fT	OCR Scan	PDF	2N917 O-237 2n h 2222a transistor 2222a to-92 transistor 2222a transistor 2n 2222 2n 2222A to-92 npn mml 600 pnp 2n 2222 transistor 33T4
NEC K 2500 Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905 Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz	OCR Scan	PDF	NE34018 NE34018 NE34018-T1 NE34018-T2 NEC K 2500 OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
817 CN Abstract: No abstract text available Text: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION N E76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • 2 . 1± 0.2 Low noise figure 1.25±0.1 NF = 0.8 dB TYP. at f = 2 GHz	OCR Scan	PDF	NE76118 E76118 NE76118-T1 NE76118-T2er IR30-00-2 817 CN
NEC D 809 F Abstract: NEC D 809 L transistor NEC D 986 E7138 Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm	OCR Scan	PDF	NE713 E71383B NE71383B] NE71300] NEC D 809 F NEC D 809 L transistor NEC D 986 E7138
NEC D 809 F Abstract: NEC D 809 71383B NEC D 809 k Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. at f = 4 GHz • High associated gain Ga = 14 dB TYP. a t f = 4 G H z • Gate width: Wg = 280 fim • Gate Length: Lg = 0.3 /xm	OCR Scan	PDF	NE713 NE71300-N NE71300-M NE71300-L NE71383B NE71383B] NE71300] NEC D 809 F NEC D 809 71383B NEC D 809 k
6463 tube Abstract: application note pll 4046 pwm 4070 CMOS XOR CD 4017 PIN DIAGRAM erf8 C8 4922 7s TMP87CC31N 331102 4011 TOSHIBA TMP87CM36N Text: TOSHIBA TMP87CC31/H31 CMOS 8 -BIT MICROCONTROLLER TMP87CC31 Nf TMP87CH31N The 87CC31/H31 the high speed and high performance 8 -b it single chip m icrocom puter. This MCU contains CPU core, ROM, RAM, in p u t / o u tp u t ports, six m u lti-function tim e r / counters, on-screen display, PWM, 6 -b it	OCR Scan	PDF	TMP87CC31/H31 TMP87CC31N, TMP87CH31N 87CC31/H31 TMP87CC31N SDIP42-P-600-1 TMP87PM36N TMP87CH31N TLCS-870 A285TNIS-11695 6463 tube application note pll 4046 pwm 4070 CMOS XOR CD 4017 PIN DIAGRAM erf8 C8 4922 7s 331102 4011 TOSHIBA TMP87CM36N
Untitled Abstract: No abstract text available Text: S XLICON EBflCIMIEfi s.a. SCHOTTK7 ! VR i - BS BS BS BS BS 9 vF XF 0o IF 9\ min. (nA max. (V ) <mA) (V) <mA) 5 100 0.5 0.5 10 15 100 100 100 20 100 0 .4 0.4 0.4 0.4 0.4 1' 10 10 DIODE vf 0 . C A S E max. 10 10 10 10 0.6 0.6 0.7 S T Y L E max. (nF>	OCR Scan	PDF	O-92S 05155Y 10155Y 10106Y 15106Y 20107Y

NF 034 Search Results

NF 034 Price and Stock

JRH Electronics 630B007NF034H

Panduit Corp FXTRP8NUFSNF034

Panduit Corp FZTRP8NUFSNF034

Panduit Corp FXTRP8NUSSNF034

Panduit Corp FW2ERQ1Q1NNF034

NF 034 Datasheets Context Search

npn UHF transistor 2N5179

transistor NEC D 587

2N5179

Untitled

ALM-1106

2N5179

2N5179

TRANSISTOR D434

C10535E

C61 capacitor

SFM-110-02-S-D-A

CC1020 PA LNA

C106 capacitor

C1000

NEC 3536

TC236

063 793

2n h 2222a

NEC K 2500

817 CN

NEC D 809 F

NEC D 809 F

6463 tube

Untitled