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    NEUTRON SENSITIVE PIN DIODE Search Results

    NEUTRON SENSITIVE PIN DIODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    NEUTRON SENSITIVE PIN DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    phototransistor ultraviolet

    Abstract: 6N140 "immune to high radiation" H1061 Neutron sensitive PIN diode MIL-HDBK-279 4N55 6N134 military optocoupler high sensitive neutron PIN diode
    Text: Radiation Immunity of Avago Technologies Optocouplers Application Note 1023 Introduction This application note describes the immunity of Avago Technologies optocoupters to the effects of high radiation environments, such as those encountered in military and space applications. According to


    Original     		PDF MIL-HDBK-279, NS-22, NS-19, MIL-M-38510F, 5954-1003E phototransistor ultraviolet 6N140 "immune to high radiation" H1061 Neutron sensitive PIN diode MIL-HDBK-279 4N55 6N134 military optocoupler high sensitive neutron PIN diode

    solar power plant

    Abstract: ASTM-F-1892 radiation cots cmos van allen belt van allen belt satellite geomagnetic electromagnetic bomb Fireball P-Channel Depletion Mosfets SOLAR TRANSISTOR
    Text: N RADIATION OWNER’S MANUAL Table of Contents – Issues, Environments, Effects Page Radiation Needs Today Providing a Unique and Cost-Effective Approach to Your Radiation Resistance Needs The Growing Radiation Market Incorporating Radiation Design Dealing with an Array of Radiation Exposures


    Original     		PDF

    Semiconductor Nuclear Radiation Detector

    Abstract: fabrication GAMMA Radiation Detector 54AC00 seu Upset 54AC00 54AC245 AN-926 C1995 JM38510 nuclear radiation detector
    Text: National Semiconductor Application Note 926 Michael Maher January 1994 INTRODUCTION Today’s rapidly changing global political climate is significantly impacting the military strategies of Free World countries Important decisions are being made regarding each


    Original     		PDF 20-3A Semiconductor Nuclear Radiation Detector fabrication GAMMA Radiation Detector 54AC00 seu Upset 54AC00 54AC245 AN-926 C1995 JM38510 nuclear radiation detector

    Zener Diodes 300v

    Abstract: ge VARISTOR DATA SHEET GE-MOV AN9307 zener diode 20a varistors crossed 22b zener diode 1015n ge varistor 250a diode zener ZL 15
    Text: Harris Semiconductor No. AN9307.1 Harris MOVs March 1995 The Connector Pin Varistor for Transient Voltage Protection in Connectors Authors: Paul McCambridge and Martin Corbett Introduction Nonlinear devices have long been used for transient voltage protection and have bee available in conventional package


    Original     		PDF AN9307 73SD23G Zener Diodes 300v ge VARISTOR DATA SHEET GE-MOV zener diode 20a varistors crossed 22b zener diode 1015n ge varistor 250a diode zener ZL 15

    diode zener ZL 15

    Abstract: gemov AN9769 varistor fail GE-MOV Metal Oxide Varistor 300v diode zener ZL 10 diode zener ZL 20 VARISTOR
    Text: Harris Semiconductor No. AN9307.2 Harris Suppression Products January 1998 The Connector Pin Varistor for Transient Voltage Protection in Connectors Authors: Paul McCambridge and Martin Corbett Introduction Nonlinear devices have long been used for transient voltage


    Original     		PDF AN9307 100lbs 30lbs 14lbs 14lbs diode zener ZL 15 gemov AN9769 varistor fail GE-MOV Metal Oxide Varistor 300v diode zener ZL 10 diode zener ZL 20 VARISTOR

    Untitled

    Abstract: No abstract text available
    Text: FRX130D, FRX130R, FRX130H S E M I C O N D U C T O R Radiation Hardened N-Channel Power MOSFETs April 1998 Features Description • 6A, 100V, rDS ON = 0.180Ω The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of


    Original     		PDF FRX130D, FRX130R, FRX130H 1000K 1E13n/cm2 1E14n/cm2

    2E12

    Abstract: FRX130D FRX130H FRX130R
    Text: FRX130D, FRX130R, FRX130H Radiation Hardened N-Channel Power MOSFETs April 1998 Features Description • 6A, 100V, rDS ON = 0.180Ω The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to


    Original     		PDF FRX130D, FRX130R, FRX130H 1000K 1E13n/cm2 1E14n/cm2 10oducts 2E12 FRX130D FRX130H FRX130R

    2E12

    Abstract: FRX130D FRX130H FRX130R
    Text: FRX130D, FRX130R, FRX130H S E M I C O N D U C T O R Radiation Hardened N-Channel Power MOSFETs January 1997 Features Description • 6A, 100V, rDS ON = 0.180Ω The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of


    Original     		PDF FRX130D, FRX130R, FRX130H 1000K 1E13n/cm2 1E14n/cm2 1-800-4-HARRIS 2E12 FRX130D FRX130H FRX130R

    Untitled

    Abstract: No abstract text available
    Text: HXBUSX18 18 Bit Bidirectional Bus Transceiver Radiation Hardened 3.3V SOI CMOS Features n 18 Bit Bidirectional Bus Interface n Rad Hard: 300k Rad Si Total Dose n Single +3.3 V Power Supply n Supports IEEE standard 1149.1-2001 Boundary Scan n Functional as One 18 Bit Transceiver or


    Original     		PDF HXBUSX18 100MHz HXBUSX18 ADS-14205

    Untitled

    Abstract: No abstract text available
    Text: HXBUSX18 18 Bit Bidirectional Bus Transceiver Radiation Hardened 3.3V SOI CMOS Features • 18 Bit Bidirectional Bus Interface ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ ■ ■ ■ ■ Supports IEEE standard 1149.1-2001 Boundary Scan


    Original     		PDF HXBUSX18 100MHz HXBUSX18 22CFR N61-1002-000-000

    5962-07A06

    Abstract: tms 1944 1A7-B MIL-PRF38535 S150 SN54LVTH18502A tms 1601 HXBUSX18
    Text: HXBUSX18 18 Bit Bidirectional Bus Transceiver Radiation Hardened 3.3V SOI CMOS Features • 18 Bit Bidirectional Bus Interface ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ ■ ■ ■ ■ Supports IEEE standard 1149.1-2001 Boundary Scan


    Original     		PDF HXBUSX18 100MHz HXBUSX18 22CFR N61-1002-000-000 5962-07A06 tms 1944 1A7-B MIL-PRF38535 S150 SN54LVTH18502A tms 1601

    5962-07A05

    Abstract: HX422D MIL-PRF38535 ES1V
    Text: HX422D Radiation Hardened Quad RS422 Differential Line Driver Features • Four Independent Drivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ Tristate Outputs ■ Common Driver Enable Control ■ ■ ■ Minimum Output Differential Voltage: 2V


    Original     		PDF HX422D RS422 20MHz HX422D RS422 22CFR N61-0999-000-000 5962-07A05 MIL-PRF38535 ES1V

    Untitled

    Abstract: No abstract text available
    Text: HX422D Radiation Hardened Quad RS422 Differential Line Driver Features • Four Independent Drivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ Tristate Outputs ■ Common Driver Enable Control ■ ■ ■ Minimum Output Differential Voltage: 2V


    Original     		PDF HX422D RS422 20MHz HX422D RS422 22CFR N61-0999-000-000

    5962-07A04

    Abstract: HX422R smd transistor bq 22 bq 726 MIL-PRF38535 S150 honeywell defense
    Text: HX422R Quad RS422 Differential Line Receiver Radiation Hardened 3.3V SOI CMOS Features • Four Independent Receivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Analog Supply ■ Common Receiver Enable Control ■ Tristate Outputs ■ Temperature Range: -55°C to 125°C


    Original     		PDF HX422R RS422 TIA/EIA-422-B 20Mb/s HX422R 200mW 22CFR N61-1000-000-000 5962-07A04 smd transistor bq 22 bq 726 MIL-PRF38535 S150 honeywell defense

    pin diodes radiation detector

    Abstract: 2n2369 avalanche Semiconductor Nuclear Radiation Detector DIODE ga101 Semiconductor Radiation Detector radiation ionizing dose TID detector pin diodes nuclear radiation detector 1N829A 2N2369 2N3032
    Text: MicroNote #050 by: Radiation Hardened Performance of Discrete Semiconductor Products Many system designs have required radiation hardness assurance for semiconductor products. In earlier years this primarily dealt with military programs, but has now evolved to


    Original     		PDF

    HP optocoupler

    Abstract: photodiode and phototransistor transistor 1012 Transistor 1967 MIL-HDBK-279 6N140 hp optocouplers military optocoupler H1061 4N55
    Text: ÉÉSSfflieÉ . . . % - • • - HEWLETT ■-■-ÿ-ii* , ; . " 1 • ' ÉPPLICATION NOTE 1023 PACKARD ■Iii|iinn»naii8— ■ ■ ig j; - ; This application note describes the im m unity of HewlettPackard optocouplers to the effects of high radiation


    OCR Scan     		PDF MIL-HDBK-279, NS-22, NS-19, MIL-M-3851 HP optocoupler photodiode and phototransistor transistor 1012 Transistor 1967 MIL-HDBK-279 6N140 hp optocouplers military optocoupler H1061 4N55

    TL 1838

    Abstract: Neutron sensitive PIN diode
    Text: H A R R IS S E M I C O N D U C T O R FRX234D, FRX234R FRj 234H Radiation Hardened N-Channel Power MOSFETs June 1994 Package Features • 2.5A, 250V, RDS(on) = 0.7000 LCC 18 PIN • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma


    OCR Scan     		PDF FRX234D, FRX234R 100KRAD 300KRAD 1000KRAD 3000KRAD to1E14 35MeV/mg/ cm227 00S74L1 TL 1838 Neutron sensitive PIN diode

    Untitled

    Abstract: No abstract text available
    Text: îsï h a r r is U U FRX9130D, FRX9130R E S E M IC O N D U C T O R H •# O / l I_ l Radiation Hardened P-Channel Power MOSFETs june 1994 Package Features • V 3A, -100V, RDS on = 0.550il LCC 18 PIN • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		PDF FRX9130D, FRX9130R -100V, 550il 100KRAD 300KRAD 1000KRAD 3000KRAD 35MeV/ 43D2271

    Untitled

    Abstract: No abstract text available
    Text: H A RR IS S E M I C O N D S E C T O R a H A R R is SEM IC O N D U C TO R b3E D • 4 3 G 2 27 1 0 G 4 7 b 2 0 hlS H H A S FRX130D, FRX130R FRjj d30H Radiation Hardened N-Channel Power MOSFETs August 1993 Features • • • • • • • Package 6A, 100V, RDS on) = 0.1800


    OCR Scan     		PDF FRX130D, FRX130R 100KRAD 300KRAD 1000KRAD 3000KRAD 3E1030

    SRFE

    Abstract: No abstract text available
    Text: H a rris 2N7291D, 2N7291R S E M I C O N D U C T O R 2 REGISTRATION PENDING Currently Available as FRK150 D, R, H November 1994 1 ^ 7 2 9 1 H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 40A, 100V, RDS(on) = 0.055Q


    OCR Scan     		PDF 2N7291D, 2N7291R FRK150 100KRAD 300KRAD 1000KRAD 3000KRAD 35MeV/mg/cm2 50IJIS SRFE

    clcc

    Abstract: No abstract text available
    Text: i^ngEs FRX130D, FRX130R, FRX130H Radiation Hardened N-Channel Power MOSFETs April 1998 Features Description • 6A, 100V, ros ON = 0.180i2 The Harris S em iconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancem ent types with


    OCR Scan     		PDF FRX130D, FRX130R, FRX130H 1000K 1E13n/cm 1E14n/cm clcc

    Untitled

    Abstract: No abstract text available
    Text: m a r r is 2N7329D, 2N7329R S E M I C O N D U C T O R 2 REGISTRATION PENDING Currently Available as FRE9160 D, R, H November 1994 1 ^ 7 3 2 9 H R a d iatio n H ard en e d P -C h a n n e l P o w er M O S FE Ts Package Features • 30A , -1 00V. RDS(on) = 0 .0 9 5 Q


    OCR Scan     		PDF 2N7329D, 2N7329R FRE9160 O-258 100KRAD 300KRAD 1000KRAD 3000KRAD -258AA

    Untitled

    Abstract: No abstract text available
    Text: h a r r ,« FRX130D, FRX130R, FRX130H S E M I C O N D U C T O R Radiation Hardened N-Channel Power MOSFETs December 1997 Features Description • 6A, 100V, ros ON = 0.180i2 The Harris S em iconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of


    OCR Scan     		PDF FRX130D, FRX130R, FRX130H 180i2 1000K 1E13n/cm 1E14n/cm

    CLCC-18

    Abstract: No abstract text available
    Text: FRX130D, FRX130R, FRX130H h a r r is S E M I C O N D U C T O R Radiation Hardened N-Channel Power MOSFETs December 1997 Features Description • 6A, 100V, Td s ON = 0-180i2 The Harris Sem iconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of


    OCR Scan     		PDF FRX130D, FRX130R, FRX130H 1000K 1E13n/cm 1E14n/cm CLCC-18