Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-428000A32 SERIES 8M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-428000A32 series is a 8 388 608 words by 32 bits dynamic RAM module on which 16 pieces of 16M DRAM uPD 4217400 are assembled.
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MC-428000A32
32-BIT
428000A32-60
428000A32-70
cycles/32
72-pin
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Untitled
Abstract: No abstract text available
Text: MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 4 0 5 L , 4 2 1 6 4 0 5 L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The /¿PD42S16405L, 4216405L are 4 194 304 w ords by 4 bits dynam ic C M O S R A M s with optional hyper page
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16M-BIT
PD42S16405L,
4216405L
26-pin
26-pln
JPD42S16405L-A60,
4216405L-A60
iPD42S160
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nec vw rcd 300
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT //PD4216400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE DESCRIPTION The |iPD 4216400, 4217400 are 4 194 304 words by 4 bits dynamic CMOS RAMs. They differ in refresh cycle execution. FEATURES • 4 194 304 w o rd s by 4 bits organization
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uPD4216400
uPD4217400
/JPD4216400,
PD4216400G3,
4217400G3
26-pin
PD4216400LA,
4217400LA
nec vw rcd 300
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MC-424000A8FA-60
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-424000A8 SERIES 4M-WORD BY 8-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-424000A8 is a 4 194 304 w ords by 8 bits dynamic RAM m odule on which 8 pieces o f 4M DRAM </iPD424100 are assembled. This m odule provides high density and large quantities o f m em ory in a small space w ith o u t utilizing the
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MC-424000A8
uPD424100
MC-424QQQA8-60
MC-424000A8-70
MC-424000A8-80
MC-424000A8-10
MC-424000A8BA,
424000A8FA
MC-424000A8FA-60
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NEC uPD
Abstract: vhv1
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /¿ P D 42S 16405, 4216405 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, EDO D e s c rip tio n The ¿xPD42S16405, 4216405 are 4,194,304 words by 4 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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uPD42S16405
uPD4216405
PD42S
26-pin
NEC uPD
vhv1
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Untitled
Abstract: No abstract text available
Text: DATA SHEET / MOS INTEGRATED CIRCUIT ¿¿PD 42S16160,4216160,42S18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ¿¡PD42S161 60 , 4 2 1 6 1 6 0 , 4 2 S 1 81 60 , 4 2 1 8 1 6 0 are 1,048, 5 7 6 words by 16 bits C M O S dynam ic RAM s. The
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16-BIT,
PD42S161
42S16160,
50-pin
42-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET / MOS INTEGRATED CIRCUIT //PD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ¿¡PD42S16160L, 4216160L, 42S18160L, 4218160Lare 1,048, 576 words by 16 bits CMOS dynamic RAMs.
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uPD42S16160L
uPD4216160L
uPD42S18160L
uPD4218160L
16-BIT,
PD42S16160L,
4216160L,
42S18160L,
4218160Lare
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marking a70 8 pin ic
Abstract: No abstract text available
Text: MOS INTEGRATED CIRCUIT mPD42S16405L, 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The /iPD42S16405L, 4216405L are 4 194 304 words by 4 bits dynamic CMOS RAMs w ith optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.
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uPD42S16405L
4216405L
/iPD42S16405L,
4216405L
PD42S16405L,
26-pin
PD42S16405L-A60,
4216405L-A60
marking a70 8 pin ic
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Untitled
Abstract: No abstract text available
Text: PRELIM INARY DATA S H E E T MOS INTEGRATED CIRCUIT >IEC /J P D 4 2 S 4 2 1 0 ,4 2 4 2 1 0 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, HYPER PA GE MODE, B Y T E READ/W RITE MODE Description The /^ D 4 2S 42 1 0,424210 are 262 144 words by 16 bits dynamic CM O S RAMs with optional
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16-BIT,
/PD42S4210
44-pin
40-pin
PD42S4210-70
26-29i8:
O35-0
0016i8
P40LE-400A-2
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD4264805, 42S65805, 4265805 64 M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, EDO Description The ¿¡PD4264805, 42S65805, 4265805 are 8,388,608 w ords by 8 bits CMOS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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PD4264805,
42S65805,
PD42S65805
32-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD4264405, 42S65405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO Description The ¿¡PD4264405, 42S65405, 4265405 are 16,777,216 words by 4 bits CMOS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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PD4264405,
42S65405,
PD42S65405
32-pin
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Untitled
Abstract: No abstract text available
Text: h 4 5 7 S2 5 G ü m b 7 D b37 • NECE; ATA SHEET 1 MOS INTEGRATED CIRCUIT /iPD42S4400L, 424400L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE DESCRIPTION ★ The /iPD42S4400L, 424400L are 1 048 576 words by 4 bits dynamic CMOS RAMs. The fast page mode
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/iPD42S4400L,
424400L
424400L
PD42S4400L
26-pin
b45752S
PD42S4400L,
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NEC 4218165-60
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / / ¿ P D 4 2 S 18 1 6 5 , 4 2 1 8 1 6 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The ¿¿PD42S18165, 4218165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO.
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16-BIT,
uPD42S18165
uPD4218165
42S18165
PD42S18165,
50-pin
42-pin
/iPD42S16165-50,
juPD42S18185-60
/PD42S18165-70,
NEC 4218165-60
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635 nec
Abstract: ZPD42
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT ¿¿PD 421165 1 M-BIT DYNAMIC RAM 64K-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The jiPD421165 is a 65,536 words by 16 bits CM OS dynamic RAM with optional hyper page mode (EDO). Hyper page mode (EDO) is a kind of the page mode and is useful for the read operation.
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64K-WORD
16-BIT,
uPD421165
/1PD421165
44-pin
40-pin
/iPD421165
pPD421165-30
PD421165
IR35-207-3
635 nec
ZPD42
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EI marking
Abstract: D42S17805L-A50
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT ¿ ^ 0 4 2 5 1 7 8 0 5 1 ., 4 2 1 7 8 0 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, EDO Description The ,uPD42S17805L, 4217805L are 2,097,152 words by 8 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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uPD42S17805L
uPD4217805L
42S17805L
iPD42S17805L,
4217805L
28-pin
IR35-207-3
VP15-207-3
EI marking
D42S17805L-A50
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b427SES
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT >IEC MPD42S18165,4218165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The /j PD42S18165, 4218165 are 1 048 576 words by 16 bits CMOS dynam ic RAMs w ith optional hyper page
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PD42S18165
16-BIT,
PD42S18165,
/iPD42S18165,
50-pin
42-pin
fiPD42S
iPD42S
42S18165
P42LE-400A
b427SES
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upd424100
Abstract: d424100 upd424100la nec vw rcd 300 nec 424100 UPD424100GS
Text: F L.427525 DGHlfil? 301 H N E C E AT A SHEET NEC MOS INTEGRATED CIRCUIT PD424100 4 M-BIT DYNAMIC RAM 4 M-WORD BY 1-BIT, FAST PAGE MODE DESCRIPTION The //PD424100 ¡s a 4 194 304 w ords by 1 bit dynam ic CMOS RAM. The fast page mode capability realize high speed access and low power consum ption.
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uPD424100
//uPD424100
26-pin
20-pin
uPD424100-60
/iuPD424100-70
uPD424100-80
iuPD424100-10
190process
d424100
upd424100la
nec vw rcd 300
nec 424100
UPD424100GS
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itr 8102
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT jjPD42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE D e s c rip tio n The /iPD42S17800L, 4217800L are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD42S17800L
uPD4217800L
/iPD42S17800L,
4217800L
PD42S17800L
28-pin
VP15-207-2
itr 8102
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D42S4260
Abstract: 424260 424260 NEC 424260-60 42S4260
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT /¿PD42S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ¿xPD42S4260, 424260 are 262,144 words by 16 bits dynamic CMOS RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.
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uPD42S4260
uPD424260
16-BIT,
xPD42S4260,
PD42S4260
44-pin
40-pin
iuPD42S
260-6Q.
/PD42S4260-7D,
D42S4260
424260
424260 NEC
424260-60
42S4260
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42S421
Abstract: I2758 uPD424210-60-G eZ 752 SCZ7 NEC Japan 424210-60 7PP4
Text: PRELIMINARY DATA SH EET_ / M O S IN T E G R A T E D CIRCUIT ¿/PD42S4210-60-G,424210-60-G 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The ¿/PD42S4210-60-G,424210-60-G is 262 144 words by 16 bits dynamic CM OS RAMs with optional
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uPD42S4210-60-G
uPD424210-60-G
16-BIT,
pPD42S4210-60-G
424210-60-G
44-pin
40-pin
/PD42S4210-60-G
42S421
I2758
eZ 752
SCZ7
NEC Japan 424210-60
7PP4
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD4 2 S 1 8 1 6 0 L , 4 2 1 8 1 6 0 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE The ,uPD42S18160L, 4218160L are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The fast page mode and
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16-BIT,
uPD42S18160L
4218160L
PD42S18160L
50-pin
42-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S16405, 4216405 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, EDO Description The ¿¡PD42S16405, 4216405 are 4,194,304 words by 4 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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PD42S16405,
PD42S16405
26-pin
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4218160LE-60
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD 42S18160, 4 2 1 8 1 6 0 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ,uPD42S18160, 4218160 are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The fast page mode and
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42S18160,
16-BIT,
uPD42S18160
PD42S18160
50-pin
42-pin
4218160LE-60
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42S4260
Abstract: 42S4260-70 NEC 42S4260-70
Text: DATA SHEET MOS INTEGRATED CIRCUIT jUPD42S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE The ^PD42S4260, 424260 are 262,144 words by 16 bits dynamic CMOS RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.
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jUPD42S4260,
16-BIT,
PD42S4260,
uPD42S4260
44-pin
40-pin
42S4260
42S4260-70
NEC 42S4260-70
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