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    NEC TRANSISTOR Search Results

    NEC TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NEC TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


    Original     		PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L

    SMD M05 sot

    Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
    Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial


    Original     		PDF 08/2M SMD M05 sot NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters

    UAA 1006

    Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
    Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH


    Original     		PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71

    PA101B

    Abstract: PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00
    Text: Application Note HIGH FREQUENCY NPN TRANSISTOR ARRAYS µPA101 µPA102 µPA103 µPA104 Document No. P10944EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) Printed in Japan 1995, 1999 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.


    Original     		PDF PA101 PA102 PA103 PA104 P10944EJ2V0AN00 PA101B PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00

    NEC 10F

    Abstract: low-noise L-band tuner nec mmic Monolithic Amplifier NEC JAPAN TRANSISTORS 1981 nec book
    Text: just imagine NEC MUL TI MEDI A NESAT PROCESS nan By utilizing the NESAT NEC Silicon Advanced Technology process, NEC realizes low-noise silicon transistors, high-perform ance silicon m onolithic integrated circuits, as well as in the super high-frequency range high reliability.


    OCR Scan     		PDF devic87 P12647EJ3V0PF00 NEC 10F low-noise L-band tuner nec mmic Monolithic Amplifier NEC JAPAN TRANSISTORS 1981 nec book

    nec scr

    Abstract: No abstract text available
    Text: NEC and California Eastern L a b s — A Partnership Built on Quality \ \ \ \ \ \ \ \ \ NEC is a global force in the To meet the rapidly growing demand computer, communications and home for their optocouplers, NEC has increased its NEC Products — CEL Service and Support


    OCR Scan     		PDF

    81E TRANSISTOR

    Abstract: 2SC3282 2SC3282A NEC J 302 2SC3283A 2SC3283 J349 J475 NEM080481-12 NEM081081-12
    Text: NEC/ CALIFORNIA NEC SbE ]> • b4B7414 0002552 22b — CLASS C, 800-960 MHz, 12 VOLT POWER TRANSISTOR INECC \ ' Z Z -I s NEM080481-12 NEM081081-12 NEM082081B-12 NEM084081B-12 FEATURES DESCRIPTION AND APPLICATIONS • LOW OPERATING VOLTAGE: 13.5 V NEC’s NEM0800 series of NPN epitaxial UHF power


    OCR Scan     		PDF b427414 0002SS2 NEM080481-12 NEM081081-12 NEM082081B-12 NEM084081B-12 NEM0800 NEM080481E-12 NEM081081E-12 81E TRANSISTOR 2SC3282 2SC3282A NEC J 302 2SC3283A 2SC3283 J349 J475

    2SC2558

    Abstract: 2SC2558K 2SC2559K ne0800 2SC2850K 2SC2850 2SC2559 bM274m NE080190 NE080490
    Text: NEC/ NEC b M 2 7 4 m GQOESa6! ÔTS » N E C C 5bE D CALIFORNIA CLASS C, 860 MHz, 12 VOLT POWER TRANSISTOR NE0800-12 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW OPERATING VOLTAGE Vcc = 13.5 V NEC’s NE0800 series of NPN epitaxial UHF power transistors


    OCR Scan     		PDF bM274m NE0800-12 NE0800 DG0E54E NE0801 NE0804 NE0810 NE080190 2SC2558 2SC2558K 2SC2559K 2SC2850K 2SC2850 2SC2559 NE080490

    transistor t07

    Abstract: NEX2303 NE 2301 02cj NEX2300 NEX2301 NEX230187 NEX2302 NEX230265 NEX230365
    Text: NEC/ CALIFORNIA NEC b42?m4 0001202 S 1SE D .7 -3 3 r < 3 3 -o * NEX2300 SERIES 2.3 GHz POWER OSCILLATOR TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H PO W ER: 3.2 W AT 2.3 GHz The NEX2300 series is an NPN transistor using NEC’s ad­ vanced Stepped Electrode Transistor SET structure with


    OCR Scan     		PDF NEX2300 NEX2300 NEX2301 NEX2302 NEX2303 NEX230365 transistor t07 NE 2301 02cj NEX230187 NEX230265

    uPD95

    Abstract: nec 2561 equivalent transistor tba 222 SH NEC 2561 NEC open cad pwc NEC 2561* D 431
    Text: NEC NEC Electronics Inc. CB-C8 0.5-Micron CMOS Cell-Based ASIC Design Manual March 1995 Document No. 70226-1 1995 NEC Electronics lnc./Printed in U.S.A. • b427525 ÜGÔ3304 bT3 ■ ft CONTENTS CHAPTER 1 GENERAL DESCRIPTION.


    OCR Scan     		PDF b427525 uPD95 nec 2561 equivalent transistor tba 222 SH NEC 2561 NEC open cad pwc NEC 2561* D 431

    92-0151

    Abstract: 2SB744 2SB744 nec 2SD794 TI31 S405A 2SB744A 2SD794A T460 1444A
    Text: NEC NEC NEC C om plem entary Pair T ransistor Series f 2SB744,744A/2SD794,794A PN P/N PN Silicon Epitaxial Transistor Audio Frequency Power Amplifier o m h & 1 ]5 ü w « t /•’; is - o u t f f l r K7>r - r ^ u j a i T- *> »>, o / J^ ífí, Í2 ( R, = 8


    OCR Scan     		PDF 2SB744 44A/2SD794 2SB744A 2SD794 2SD794A i0942 92-0151 2SB744 nec TI31 S405A T460 1444A

    Untitled

    Abstract: No abstract text available
    Text: D O D -H -7 9 7 8 1/26 NEC TFT COLOR LCD MODULE Type: NL6448CC33-30W 26cm 10.4 Type , VGA SPECIFICATIONS (4thJEdition) PRELIMINARY This document is preliminary. All infonnation in this document is subject to change without prior notice. NEC Corporation NEC Electron Devices


    OCR Scan     		PDF NL6448CC33-30W DOD-H-7957 DOD-H-7978

    Untitled

    Abstract: No abstract text available
    Text: NEC NEC Electronics Inc. Description /¿PC4081 J-FET INPUT OPERATIONAL AMPLIFIER Pin Configuration TheAiPC4081 is a single operational amplifier with a com­ bination of matched ion implanted P-channel J-FET inputs with standard bipolar transistor technology. The


    OCR Scan     		PDF PC4081 TheAiPC4081 /UPC4081 /JPC4081

    Untitled

    Abstract: No abstract text available
    Text: NEC 3.3-V olt, 0.44-M icron G ate Arrays NEC Electronics Inc. Prelim inary April 1996 Figure 1. 672-pin BGA Description NEC’s 3.3-volt QB-8 fam ily consists of ultra-highperform ance, subm icron gate arrays targeted for applications requiring high speeds and low power


    OCR Scan     		PDF 672-pin

    transistor f422 equivalent

    Abstract: transistor f422 F913 F422 transistor H49-M97 y205 TBB 469 F521-F523 0256C g0641
    Text: NEC CB-C9 Family Design Manual June 1996 Document No. A10927EU1V0UM00 Copyright 1996 NEC Electronics Inc. All Rights Reserved b 4 Ë 75 E 5 0063Û Û1 7 b l NEC CB-C9 Family Design Manual Document Number A10927EU1V0UM00 Revision History Preliminary Release On-Line - June 1996


    OCR Scan     		PDF A10927EU1V0UM00 A11040XEU1V0UM00 b427525 G064122 transistor f422 equivalent transistor f422 F913 F422 transistor H49-M97 y205 TBB 469 F521-F523 0256C g0641

    Untitled

    Abstract: No abstract text available
    Text: {JPD4216405 4M x 4-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Product Brief May 1994 Description Pin Configurations The //PD4216405 devices are dynamic CMOS RAMs with an optional hyper-page mode organized as 4,194,304 words by 4 bits. A single-transistor dynamic


    OCR Scan     		PDF uPD4216405 64-ms JPD4216405 26-Pin iPD4216405G3-XX G3-50-7KD 4216405G 3-70-7KD //PD4216405LA-50

    Untitled

    Abstract: No abstract text available
    Text: NEC NEC Electronics Inc. Description //P C 4 55 8 DUAL HIGH-PERFORMANCE OPERATIONAL AM PLIFIER Pin Configuration The ¿ PC4558 is a dual operational am plifier with internal frequency compensation. Using low noise lateral PNP input transistors on the am plifier inputs


    OCR Scan     		PDF PC4558 RC4558 3-002157A

    d 65632

    Abstract: 65612 nec L302 CMOS Transmission gate Specifications nec cmos CMOS-5 NEC OPENCAD CMOS Block library 700-207
    Text: CMOS-6/ 6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. February 1995 Description Figure 1. Sample CMOS-6/6A/6 V/6X Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are high performance, sub-micron effective channel length CMOS products


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    Untitled

    Abstract: No abstract text available
    Text: {IPD4216805 2M x 8-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Product Brief April 1994 Description Pin Configurations The ¿¿PD4216805 devices are dynamic CMOS RAMs with an optional hyper-page mode organized as 2,097,152 words by 8 bits. A single-transistor dynamic


    OCR Scan     		PDF uPD4216805 28-Pin nPD4216805G5-XX PD4216805 64-ms 6805G5-50-7JD /PD4216805G5-60-7JD //PD4216805G5-70 pPD4216805G5-50-7KD iPD4216805G5-60-7KD

    2SC2150

    Abstract: NE57835 NE578 nec NE57800 NE57807 2SC215 NE AND micro-X NE578 transistor NEC ka 42
    Text: NEC/ CALIFORNIA NEC 5 bE D b427414 000540b 4bS HINE CC NE57800 NE57807 NE57835 NPN SILICON MICROWAVE TRANSISTOR "í-si-n - FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 6 GHz The NE578 series of NPN silicon transistors is designed for use


    OCR Scan     		PDF bM27M14 QQQE40b NE57800 NE57807 NE57835 NE57800 NE578 2SC2150 NE57835 NE578 nec 2SC215 NE AND micro-X transistor NEC ka 42

    NE64800

    Abstract: No abstract text available
    Text: NEC/ CALIFORNIA NEC SbE D b4S74m 0D02433 4^3 K-BAND BIPOLAR OSCILLATOR TRANSISTOR • NE64800 OUTLINE DIMENSIONS FEATURES NECC Units in jjm NE64800 (CHIP) • FUNDAMENTAL OSCILLATIO N GREATER THAN 20 GHz • LOW PHASE NOISE • OPERATION OVER M IL-SPEC TEMP RANGES


    OCR Scan     		PDF b4S74m 0D02433 NE64800 NE64800

    uPD65801

    Abstract: uPD65800 UPD65804
    Text: CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, sub­ micron gate arrays, targeted for applications requiring e xtensive in te g ra tio n and high speeds. The device


    OCR Scan     		PDF H27SSS uPD65801 uPD65800 UPD65804

    HPD711

    Abstract: 3.5795MHz PD71101
    Text: NEC APPLICA T/ON NOTE LOW-VOLTAGE OPERATION DRAM Document No. NEC Corporation 1996 M 1 1411E J2V 0A N 00 2nd edition Date Published July 1996 P Printed in Japan V805, V810, and V810 Family are tradem arks o f NEC Corporation. VGA is a tradem ark o f International Business Machines Corporation.


    OCR Scan     		PDF 1411E HPD711 3.5795MHz PD71101

    2SA1224

    Abstract: NEC JAPAN 3167 1S955 NE74014 NE90100 NE90115
    Text: NEC/ 5bE D CALIFORNIA NEC bM27M14 0005515 bMT MNECC T - 3 U 'L 3 PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 NE90115 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDW IDTH PRODUCT: fr = 2.5 GHz The NE901 Series o f PNP silicon epitaxial transistors is de­


    OCR Scan     		PDF 00GS512 NE90100 NE90115 NE74014 NE901 NE90115 2SA1224 NEC JAPAN 3167 1S955 NE74014