2SC5005
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
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2SC5005
2SC5005
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nec 2571 4 pin
Abstract: nec 2571 3771 nec ZO 103 MA 75 603 2SC4957 2SC4957-T1 2SC4957-T2 marking 2748 transistor marking T83 ghz
Text: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0.3 pF TYP.
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2SC4957
2SC4957-T2
2SC4957-T1
nec 2571 4 pin
nec 2571
3771 nec
ZO 103 MA 75 603
2SC4957
2SC4957-T1
2SC4957-T2
marking 2748
transistor marking T83 ghz
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uPC5023
Abstract: uPc842 nec 10f uPC5700 oa10 diode specs UPC5020 SW01A RG03 upc5024 UPC4558
Text: µPC5700 Series Analog Master II AM2 Family ted a r g e t y In nce l h g i H n ma o r i o s f i r c e e tP Pr High- perior Cos u with S SI A g o l Ana C New s t c u Prod What Is an Analog Master? An analog master is a semi-custom LSI for creating analog circuits on a master wafer by interconnecting pre-diffused
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PC5700
A15458EJ1V0PF00
uPC5023
uPc842
nec 10f
uPC5700
oa10 diode specs
UPC5020
SW01A
RG03
upc5024
UPC4558
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA652TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm FEATURES 2.5 V drive available Low on-state resistance RDS(on)1 = 294 mΩ MAX. (VGS = −4.5 V, ID = −1.0 A) RDS(on)2 = 336 mΩ MAX. (VGS = −4.0 V, ID = −1.0 A)
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PA652TT
PA652TT
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PC2709
Abstract: PC2709T VP15-00-3 marking c1e transistor UPC2709TB-E3
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2709TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC2709TB is a silicon monolithic integrated circuits designed as 1st IF amplifier for DBS tuners. This IC is packaged in super minimold package which is smaller than conventional minimold.
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PC2709TB
PC2709TB
PC2709T
PC2709T.
PC2709
VP15-00-3
marking c1e transistor
UPC2709TB-E3
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d1557
Abstract: d472 TRANSISTOR TRANSISTOR d1557 transistor d472 D1162 D1790 D1557 transistor D1866 Nec d862 transistor D442
Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE428M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE428M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
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NE428M01
NE428M01
200Pm
NE428M01-T1
d1557
d472 TRANSISTOR
TRANSISTOR d1557
transistor d472
D1162
D1790
D1557 transistor
D1866
Nec d862
transistor D442
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marking c1e transistor
Abstract: marking c1e PC2709 PC2709T VP15-00-3 UPC2709 antenna parabola PC2709TB
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2709TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC2709TB is a silicon monolithic integrated circuits designed as 1st IF amplifier for DBS tuners. This IC is packaged in super minimold package which is smaller than conventional minimold.
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PC2709TB
PC2709TB
PC2709T
PC2709T.
marking c1e transistor
marking c1e
PC2709
VP15-00-3
UPC2709
antenna parabola
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2SC4571
Abstract: 2SC4571-T1 2SC4571-T2
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the
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2SC4571
2SC4571
SC-70)
2SC4571-T1
2SC4571-T1
2SC4571-T2
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TD-2411
Abstract: NEC 3552 2SC5011 2SC5011-T1 2SC5011-T2 702 mini transistor P1039 1357 transistor NEC
Text: DATA SHEET SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters PART NUMBER QUANTITY 2SC5011-T1 3 Kpcs/Reel.
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2SC5011
2SC5011-T1
2SC5011-T2
TD-2411
NEC 3552
2SC5011
2SC5011-T1
2SC5011-T2
702 mini transistor
P1039
1357 transistor NEC
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NEC 7924
Abstract: ic 7924 2SC5013 2SC5013-T1 2SC5013-T2 application of IC 4538
Text: DATA SHEET SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 10 GHz TYP. in millimeters QUANTITY 2SC5013-T1
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2SC5013
2SC5013-T1
2SC5013-T2
NEC 7924
ic 7924
2SC5013
2SC5013-T1
2SC5013-T2
application of IC 4538
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2SC4571
Abstract: 2SC4571-T1 2SC4571-T2
Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the
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2SC4571
2SC4571
SC-70)
2SC4571-T1
2SC4571-T1
2SC4571-T2
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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c1677C
Abstract: P12152E C1677 C10535E PC1677C TRANSISTOR 1616 ac
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1677C 5 V-BIAS, +19.5 dBm OUTPUT, 1.8 GHz WIDE BAND SiMMIC AMPLIFIER DESCRIPTION The µPC1677C is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter
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PC1677C
PC1677C
c1677C
P12152E
C1677
C10535E
TRANSISTOR 1616 ac
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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nec 2571
Abstract: NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz
Text: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0 .3 p F T Y P .
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2SC4957
2SC4957-T1
4957-T2
2SC4957)
nec 2571
NEC D 553 C
nec 2571 4 pin
NEC IC D 553 C
3771 nec
nec 716
nec 1565
transistor marking T83 ghz
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transistor 1211
Abstract: transistor su 312 transistor zo 109
Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
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2SC5005
2SC5005
Collect69
transistor 1211
transistor su 312
transistor zo 109
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2709TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The ,uPC2709TB is a silicon monolithic integrated circuits designed as 1st IF amplifier for DBS tuners. This IC is packaged in super minimold package which is sm aller than conventional minimold.
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UPC2709TB
uPC2709TB
PC2709TB
PC2709T
uPC2709T
VP15-00-3
WS60-00-1
C10535E)
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NEC D 553 C
Abstract: TRANSISTOR MAC 223 NEC IC D 553 C
Text: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance C re = 0.3 pF TYP.
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2SC4957
2SC4957-T1
2SC4957-T2
Ple-107
NEC D 553 C
TRANSISTOR MAC 223
NEC IC D 553 C
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NEC 2561
Abstract: nec 2561 le NEC 2561 LE 301 sem 2105 16 pin saa 1074 SAA 1061 nec 2561 4 pin cp 1099 c 945 p 331 saa 1049
Text: PRELIMINARY DATA SHEET_ NEC GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 yum recessed gate • Gate Width : Wg = 400 ym
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NE72218
NE72218-T1
NE72218-T2
NEC 2561
nec 2561 le
NEC 2561 LE 301
sem 2105 16 pin
saa 1074
SAA 1061
nec 2561 4 pin
cp 1099
c 945 p 331
saa 1049
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CD 1691 CB
Abstract: NEC 7924 NEC D 986 IC - 7434
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 10 GHz TYP. • Low Noise, High Gain •
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2SC5013
2SC5013-T1
2SC5013-T2
CD 1691 CB
NEC 7924
NEC D 986
IC - 7434
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st vu
Abstract: cc460 Himax NEC SOI switch 043tg
Text: NEC MOS INTEGRATED CIRCUIT /¿PD42S16800L, 4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The /JPD42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 w ords by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the |iPD42S16800L, 42S17800L can execute CAS before RAS self refresh see
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uPD42S16800L
uPD4216800L
uPD42S17800L
uPD4217800L
/JPD42S16800L,
4216800L,
42S17800L,
4217800L
iPD42S16800L,
42S17800L
st vu
cc460
Himax
NEC SOI switch
043tg
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Untitled
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT /¿PD42S16800L, 4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The /JPD42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 w ords by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the |iPD42S16800L, 42S17800L can execute CAS before RAS self refresh see
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uPD42S16800L
uPD4216800L
uPD42S17800L
uPD4217800L
/JPD42S16800L,
4216800L,
42S17800L,
4217800L
iPD42S16800L,
42S17800L
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P3Z smd code
Abstract: smd code marking NEC g
Text: QUICK REFERENCE GUIDE 5 PACKAGING SPECIFICATION FOR "SMD PACKING INFORMATION . _ BULK PACKING 2 /3 PIN ULTRA SUPER MINI MOLD TYPE N0->T1 TYPE N 0. -T2 Q 'ty 3 0 0 0 pcs./reel 8 mm TAPE 2 PIN SUPER MINI MOLD TYPE NO.: -T 1 TYPE NO >T2 Q 'ty 3 0 0 0 pcs./reel
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MP-25-Z
P3Z smd code
smd code marking NEC g
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transistor NEC D 882 p
Abstract: 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTO R 4 PINS SU PER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters fT = 6.5 G H zT Y P . • Low Noise, High Gain
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2SC5011
2SC5011-T1
transistor NEC D 882 p
393AN
transistor 2sc 3203
nec d 1590
2sc 1329
transistor NEC b 882
nec a 634
e50p
NEC D 822 P
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