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    NEC SEMICONDUCTOR LAND PATTERN DIMENSIONS Search Results

    NEC SEMICONDUCTOR LAND PATTERN DIMENSIONS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NEC SEMICONDUCTOR LAND PATTERN DIMENSIONS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    D2029

    Abstract: pick and place robot NEC semiconductor land pattern dimensions nec 258 PA2350B
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    D20295EJ1V0AN D2029 pick and place robot NEC semiconductor land pattern dimensions nec 258 PA2350B PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    M8E0909E) PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    pa2450b

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2450B N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 2.0±0.1 0.5±0.1 0.5±0.1 1 0.25 +0.1 -0.05 The µ PA2450B is a switching device, which can be driven directly by a 2.5 V power source. The µ PA2450B features a low on-state resistance and


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    PA2450B PA2450B PDF

    U6000

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2452 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 2.0±0.1 0.5±0.1 0.5±0.1 excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.


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    PA2452 PA2452 U6000 PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2450C N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 2.0±0.1 1 0.25 +0.1 -0.05 0.5±0.1 0.5±0.1 The μ PA2450C is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2450C features a low on-state resistance and excellent


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    PA2450C PA2450C PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2451B N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 2.0±0.1 0.5±0.1 0.5±0.1 1 0.25 +0.1 -0.05 The µ PA2451B is a switching device, which can be driven directly by a 2.5 V power source. The µ PA2451B features a low on-state resistance and


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    PA2451B PA2451B PDF

    PA2451CTL-E1-A

    Abstract: PA2451CTL
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2451C N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 2.0±0.1 1 0.25 +0.1 -0.05 0.5±0.1 0.5±0.1 The μ PA2451C is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2451C features a low on-state resistance and excellent


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    PA2451C PA2451C PA2451CTL-E1-A PA2451CTL PDF

    pa245

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    M8E0909E) pa245 PDF

    PA2451C

    Abstract: hwson 6pin PA2451CTL-E1-A PA2451CTL
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2451C N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 2.0±0.1 1 0.25 +0.1 -0.05 0.5±0.1 0.5±0.1 The μ PA2451C is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2451C features a low on-state resistance and excellent


    Original
    PA2451C PA2451C hwson 6pin PA2451CTL-E1-A PA2451CTL PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    MARKING T6C

    Abstract: lga 1155 package Code T6S M33 TRANSISTOR 14SSOP QFN-36 LAND PATTERN 14LGA 36pin qfn marking 6-PIN PLASTIC TSON nec 44pin
    Text: Technical Note PACKAGES LINE-UP FOR RF AND MICROWAVE DEVICES Document No. PX10051EJ35V0TN 35th edition Date Published March 2010 NS NEC Electronics Corporation 2001, 2010 Printed in Japan • The information in this document is current as of March, 2010. The information is subject to change


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    PX10051EJ35V0TN G0706 MARKING T6C lga 1155 package Code T6S M33 TRANSISTOR 14SSOP QFN-36 LAND PATTERN 14LGA 36pin qfn marking 6-PIN PLASTIC TSON nec 44pin PDF

    116-Pin

    Abstract: PBGA 256 reflow profile semiconductor cross index Lead Free reflow soldering profile BGA reflow soldering profile BGA 224-pin plastic ball grid array 0.8mm JIS-Z0202 tray qfp 14x14 1.4 tray bga 10x10 pcb warpage after reflow
    Text: small! What is a CSP Chip Size Package ? A “CSP” is an integrated circuit package with dimensions equal to or slightly larger than those of the silicon chip it contains. Specifically, a package with size (L x W) equal to the size of the chip is called a Real Chip Size


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    C13185EJ1V0PF00 116-Pin PBGA 256 reflow profile semiconductor cross index Lead Free reflow soldering profile BGA reflow soldering profile BGA 224-pin plastic ball grid array 0.8mm JIS-Z0202 tray qfp 14x14 1.4 tray bga 10x10 pcb warpage after reflow PDF

    NEC 2561A

    Abstract: nec 2501 NEC 2581A opto coupler 2561A NEC 2501A NEC 2561A w 2581A NEC 2501 Opto coupler 2501 photocoupler opto 2581A
    Text: NEPOC Photocoupler Family OC MOSFET™ Family Device Overview 2005 When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.


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    NEPOC-OC-DO20051 NEC 2561A nec 2501 NEC 2581A opto coupler 2561A NEC 2501A NEC 2561A w 2581A NEC 2501 Opto coupler 2501 photocoupler opto 2581A PDF

    NEC semiconductor land pattern dimensions

    Abstract: renesas 64 QFP
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    100-pin 100P6S-A 100P6S-A. IC61-TOOL-4 65mm-pitch NEC semiconductor land pattern dimensions renesas 64 QFP PDF

    ldmos nec

    Abstract: No abstract text available
    Text: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different


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    NE55410GR NE55410GR ldmos nec PDF

    marking code SMD Transistor 2ak

    Abstract: smd code marking NEC g TRANSISTOR SMD MARKING CODE 3401 transistor 5dx smd fairy liquid marking code AE SMD Transistor UPD65013 1.6/SmD TRANSISTOR av Ultrasonic humidifier circuit koki solder paste
    Text: Information SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL Document No. C10535EJ9V0IF00 9th edition Date Published December 1997 N Printed in Japan 1989 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written


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    C10535EJ9V0IF00 marking code SMD Transistor 2ak smd code marking NEC g TRANSISTOR SMD MARKING CODE 3401 transistor 5dx smd fairy liquid marking code AE SMD Transistor UPD65013 1.6/SmD TRANSISTOR av Ultrasonic humidifier circuit koki solder paste PDF

    GE4F

    Abstract: UPD65013 74022a SMD BGA 672 DRAWING ULF-210R TRANSISTOR SMD MARKING CODE 352 UPD7514 UPC451G2 smd TRANSISTOR code YW UPD74HC00
    Text: Information SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL Document No. C10535EJ9V0IF00 9th edition Date Published December 1997 N Printed in Japan 1989 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written


    Original
    C10535EJ9V0IF00 GE4F UPD65013 74022a SMD BGA 672 DRAWING ULF-210R TRANSISTOR SMD MARKING CODE 352 UPD7514 UPC451G2 smd TRANSISTOR code YW UPD74HC00 PDF