NEC RF SWITCH 1998 Search Results

NEC RF SWITCH 1998 Result Highlights (5)

Part	Manufacturer	Description
TBAW56	Toshiba Electronic Devices & Storage Corporation	Switching Diode, 80 V, 0.215 A, SOT23
HN1D05FE	Toshiba Electronic Devices & Storage Corporation	Switching Diode, 400 V, 0.1 A, ES6
74HC4053FT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
LBAA0QB1SJ-295	Murata Manufacturing Co Ltd	SX1262 MODULE WITH OPEN MCU
GRM-KIT-OVER100-DE-D	Murata Manufacturing Co Ltd	0805-1210 over100uF Cap Kit

NEC RF SWITCH 1998 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TH3591B Abstract: sma M4 diode UBR-120 LD7202 LD7202A LD7202B LD7202L LD7202W th359 THERMAL SWITCH Text: DATA S H E E T HIGH POWER TRAVELING WAVE TUBE FOR GROUND TERMINALS LD7202 SERIES 14 GHz, 600 W CW, PPM FOCUSING, HIGH POWER GAIN GENERAL DESCRIPTION NEC LD7202 series of PPM-focused traveling wave tubes are designed for use as final amplifiers tube in the	Original	LD7202 TH3591B. AMP861647-8 TH3591B sma M4 diode UBR-120 LD7202A LD7202B LD7202L LD7202W th359 THERMAL SWITCH	PDF
LD79A02K Abstract: NEC RF Switch 1998 NEC RF Switch Text: DATA S H E E T MICROWAVE POWER MODULE FOR COMMUNICATIONS LD79A02K 30 GHz, 20 W CW, LIGHT WEIGHT, COMPACT, EFFICIENT GENERAL DESCRIPTION MPM stands for Microwave Power Module and is the solution introduced by NEC for a microwave power source with high efficiency and the most compact size.	Original	LD79A02K LD79A02K NEC RF Switch 1998 NEC RF Switch	PDF
uPD98311 Abstract: pc8105 k band digital phase shifter pc8104 MG8230A 5-5ee PC8101 "digital phase shifter" MG3670B digital phase shifter Text: Application Note Indirect Quadrature Modulator ICs for Digital Mobile Communication Usage of µPC8101, 8104, 8105, 8125, and 8129 Document No. P13251EJ1V0AN00 1st edition Date Published May 1998 N CP(K) Printed in Japan 1998 [MEMO] 2 The information in this document will be updated without notice.	Original	PC8101, P13251EJ1V0AN00 circui588-6130 uPD98311 pc8105 k band digital phase shifter pc8104 MG8230A 5-5ee PC8101 "digital phase shifter" MG3670B digital phase shifter	PDF
VTC6361B4 Abstract: DM9601-3P VTC6361B3 10-32 UNC-2B travelling wave tube LD7217 LD7217S LD7217W ET0048EJ CPR137F Text: DATA S H E E T HIGH POWER TRAVELING WAVE TUBE FOR GROUND TERMINALS LD7217 SERIES 6 GHz, 600 W/700 W CW, PPM FOCUSING, HIGH POWER GAIN GENERAL DESCRIPTION NEC LD7217 series of PPM-focused traveling wave tubes are designed for use as final amplifiers in the earth-tosatellite communications transmitter.	Original	LD7217 LD7217S LD7217W LD7217S) LD7217) LD7217W) CPR-137F VTC6361B4 DM9601-3P VTC6361B3 10-32 UNC-2B travelling wave tube ET0048EJ CPR137F	PDF
PD16877 Abstract: UPA1602GS MOS FET Array UPA1600CX PD16814 uPD16833AGS-9JH PD16805 mil grade LED lamps sop array fet 30-pin nec Text: NEC INTELLIGENT POWER MOS LSI Motor Actuator Driver, Power ICs September 1999 NEC INTELLIGENT POWER MOS LSI Preface As an increasing number of high-performance, compact systems have become available in recent years, power devices have been required not only to drive	Original	G11903EJ5V0PF00 PD16877 UPA1602GS MOS FET Array UPA1600CX PD16814 uPD16833AGS-9JH PD16805 mil grade LED lamps sop array fet 30-pin nec	PDF
basic single phase ac motor reverse forward Abstract: basic ac single phase motor reverse forward switch basic single phase ac motor reverse forward circuit diagram Fdd spindle motor circuit conclusion phase ac motor reverse forward basic single phase ac motor forward circuit diagram NEC servo drive motor CD-ROM pin diagram General Purpose Motor Driver dc Text: LINEUP 2 CD-ROM SPINDLE MOTOR DRIVERS Koichiro Oku Introduction NEC supplies intelligent power MOS LSIs as high-performance power devices. These intelligent power MOS LSIs, which integrate a system conventionally consisting of several chips on one chip as shown in Figure 1, have	Original		PDF
Audio Power Amplifier MOSFET TOSHIBA Abstract: P-Channel Depletion Mosfets RF MODULE CIRCUIT DIAGRAM dect gaas fet vhf uhf varicap diode Laser Diode for dvd 500 mW 2SK508 J113 equivalent BGY88/04 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS Text: Semiconductors RF Manual 6th edition Application and design manual for RF products May 2005 date of release: May 2005 document order number: 9397 750 15125 Semiconductors Henk Roelofs,Vice President & General Manager RF Products Introduction The RF Manual covers a broad variety of material and many aspects about RF systems. It shows	Original		PDF
rf mems switch spst Abstract: SKY13317-373 Hittite RF Switch SOI military switch EDN handbook rf3024 SKY13317-373LF RF3023 RF3025 2SMES-01 Text: R F switching options: The right fit might come with a loss Manufacturers are offering SOI and MEMS alternatives to PIN-diode, GaAs, and electromechanical switches for a variety of RF applications, but you need to understand RF-switch specs before you commit to a new technology.	Original	AN-952, com/090917cs rf mems switch spst SKY13317-373 Hittite RF Switch SOI military switch EDN handbook rf3024 SKY13317-373LF RF3023 RF3025 2SMES-01	PDF
20000w audio amplifier circuit diagram Abstract: Sony Semiconductor Replacement Handbook 1991 20000w audio amplifier pcb IRF power mosfets catalog IRF TRANSISTOR SUBSTITUTION philips rf manual 2SK170BL 2SK163 Funkamateur TEA5767 Text: 2nd edition RF Manual product & design manual for RF small signal discretes product & design manual for RF small signal discretes 2nd edition October 2002 Page: 1 2nd edition RF Manual product & design manual for RF small signal discretes Content 1. 2. 3.	Original	BB202, BGA6589 20000w audio amplifier circuit diagram Sony Semiconductor Replacement Handbook 1991 20000w audio amplifier pcb IRF power mosfets catalog IRF TRANSISTOR SUBSTITUTION philips rf manual 2SK170BL 2SK163 Funkamateur TEA5767	PDF
diode cross reference Abstract: diode hp 2800 motorola diode cross reference schottky diode cross reference led cross reference HP 2804 SCHOTTKY DIODES CROSS REFERENCE hp 2800 diode HSMS-3800 pin diode cross reference Text: PIN and Schottky Diodes Cross Reference RF/mW Components Surface Mount PIN Diode Selection Guide SOT-23 Single Application VBR Attenuator 50 Ω 100 V HSMP-3800 D0 Attenuator 75 Ω 100 V HSMP-3810 E0 Dual Anode Dual Cathode Series Pair SOT-143 Common Common Unconnected	Original	OT-23 HSMP-3800 HSMP-3810 OT-143 HSMP-3802 HSMP-3804 HSMP-4810 HSMP-3812 HSMP-3813 HSMP-3814 diode cross reference diode hp 2800 motorola diode cross reference schottky diode cross reference led cross reference HP 2804 SCHOTTKY DIODES CROSS REFERENCE hp 2800 diode HSMS-3800 pin diode cross reference	PDF
C10535E Abstract: PPG152TA PPG152TA-E3 UPG152TA VP15-00-3 NEC RF Switch 1998 Text: DATA SHEET GaAs INTEGRATED CIRCUIT PPG152TA L-BAND SPDT SWITCH DESCRIPTION The PPG152TA is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low	Original	PPG152TA PPG152TA C10535E PPG152TA-E3 UPG152TA VP15-00-3 NEC RF Switch 1998	PDF
traveling wave tube Abstract: TRAVELING WAVE TUBE 3 collector LD7215W microwave nec 500 transmitter Helix tube Text: DATA S H E E T HIGH POWER TRAVELING WAVE TUBE FOR GROUND TERMINALS LD7215W 6 GHz, 3 kW CW, PPM FOCUSING, HIGH POWER GAIN GENERAL DESCRIPTION NEC LD7215W is a PPM-focused traveling wave tube designed for use as final amplifier in the earth-to-satellite communications transmitter.	Original	LD7215W LD7215W traveling wave tube TRAVELING WAVE TUBE 3 collector microwave nec 500 transmitter Helix tube	PDF
MARK 321G Abstract: IS-136 NEC RF Switch 1998 Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG139GV L-BAND DPDT MMIC SWITCH DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw DPDT switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage	Original	PG139GV PG139GV MARK 321G IS-136 NEC RF Switch 1998	PDF
tcxo philips 4322 Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi Text: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The	Original		PDF

smd code book Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ	Original	OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes	PDF
CR10-101J-T Abstract: colpitts oscillator using 741 Colpitts VCO design APN1010 varactor diode for Colpitts oscillator kyocera sot 23-5 Tuner Applications APN1006 meander-line VCO circuit diagram 1.2 ghz tuner Text: Application Note A VCO Design for WLAN Applications in the 2.4–2.5 GHz ISM Band APN1010 Introduction The increased demand for mobile network connections has lead to the establishment of RF interface standards for Wireless Local Area Networks WLANs . The	Original	APN1010 11-bit APN1007, APN1012, APN1013, APN1015, APN1016, 4/00A CR10-101J-T colpitts oscillator using 741 Colpitts VCO design APN1010 varactor diode for Colpitts oscillator kyocera sot 23-5 Tuner Applications APN1006 meander-line VCO circuit diagram 1.2 ghz tuner	PDF
q406 transistor Abstract: transistor equivalent q406 q406 transistor data equivalent q406 q406 KV1310 MURATA SFE10.7 MHZ KV1310 equivalent transistor q406 q206 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
NEC motor Abstract: C10535E Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD16836 THREE-PHASE SPINDLE MOTOR DRIVER FOR MONOLITHIC CD-ROM DESCRIPTION The µPD16836 is a three-phase spindle motor driver for CD-ROM drives which consists of a CMOS control circuit and MOS bridge output. It employs a three-phase full-wave PWM driving method and a MOS FET in the output stage	Original	PD16836 PD16836 NEC motor C10535E	PDF
C10535E Abstract: PPG152TA PPG152TA-E3 UPG152TA VP15-00-3 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
colpitts oscillator using 741 Abstract: meander-line antenna APN1010 VCO circuit diagram meander-line avx CR10-101J-T BV 726 C 1 Converter ku band HIGH POWER ANTENNA SWITCH PIN DIODE CR10-101J-T loop gain of Colpitts VCO design 4 ghz Text: APPLICATION NOTE APN1010: A VCO Design for WLAN Applications in the 2.4–2.5 GHz ISM Band Introduction The increased demand for mobile network connections has led to the establishment of RF interface standards for Wireless Local Area Networks WLANs . The unlicensed ISM frequency band,	Original	APN1010: 11-bit colpitts oscillator using 741 meander-line antenna APN1010 VCO circuit diagram meander-line avx CR10-101J-T BV 726 C 1 Converter ku band HIGH POWER ANTENNA SWITCH PIN DIODE CR10-101J-T loop gain of Colpitts VCO design 4 ghz	PDF
C10535E Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
nec vco Abstract: P1314 Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT ¿ PG 139GV L-BAND DPDT MMIC SWITCH DESCRIPTION The ¿¿PG139GV is L-Band Double Pole, Double Throw (DPDT switch developed for digital cellular or cordless telephone and PCS applications.	OCR Scan	uPG139GV nec vco P1314	PDF
152T Abstract: No abstract text available Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT j u P G 152T A L-BAND SPDT SWITCH DESCRIPTION The p PG152TA is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application.	OCR Scan	uPG152TA WS60-00-1 IR35-00-3 C10535E) 152T	PDF
H1H0 Abstract: PD16836 Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿P D 16836 THREE-PHASE SPINDLE MOTOR DRIVER FOR MONOLITHIC CD-ROM DESCRIPTION The /¿PD16836 is a three-phase spindle motor driver for CD-ROM drives which consists of a C M OS control circuit and MOS bridge output. It em ploys a three-phase full-wave PWM driving method and a MOS F E T in the output stage	OCR Scan	uPD16836 H1H0 PD16836	PDF

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NEC RF SWITCH 1998 Search Results

NEC RF SWITCH 1998 Result Highlights (5)

NEC RF SWITCH 1998 Datasheets Context Search

TH3591B

LD79A02K

uPD98311

VTC6361B4

PD16877

basic single phase ac motor reverse forward

Audio Power Amplifier MOSFET TOSHIBA

rf mems switch spst

20000w audio amplifier circuit diagram

diode cross reference

C10535E

traveling wave tube

MARK 321G

tcxo philips 4322

smd code book

CR10-101J-T

q406 transistor

NEC motor

C10535E

colpitts oscillator using 741

C10535E

nec vco

152T

H1H0