Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD444010L-X 4M-BIT CMOS STATIC RAM 512K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444010L-X is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. The µPD444010L-X has two chip enable pins (/CE1, CE2) to extend the capacity.
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PD444010L-X
512K-WORD
PD444010L-X
48-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD442012L-X 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442012L-X is a high speed, low power, 2,097,152 bits 131,072 words by 16 bits CMOS static RAM. The µPD442012L-X has two chip enable pins (/CE1, CE2) to extend the capacity.
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PD442012L-X
128K-WORD
16-BIT
PD442012L-X
48-pin
I/O16)
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D431000A
Abstract: d431000 PD431000A upd431000a
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431000A 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT Description The µPD431000A is a high speed, low power, and 1,048,576 bits 131,072 words by 8 bits CMOS static RAM. The µPD431000A has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available. In
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PD431000A
128K-WORD
PD431000A
32-pin
D431000A
d431000
upd431000a
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uPD444012LGY-B70X-MJH
Abstract: uPD444012LGY-B70X uPD444012
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD444012L-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444012L-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. The µPD444012L-X has two chip enable pins (/CE1, CE2) to extend the capacity.
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PD444012L-X
256K-WORD
16-BIT
PD444012L-X
48-pin
I/O16)
uPD444012LGY-B70X-MJH
uPD444012LGY-B70X
uPD444012
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD442012L-X 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442012L-X is a high speed, low power, 2,097,152 bits 131,072 words by 16 bits CMOS static RAM. The µPD442012L-X has two chip enable pins (/CE1, CE2) to extend the capacity.
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PD442012L-X
128K-WORD
16-BIT
PD442012L-X
48-pin
I/O16)
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NEC marking BX
Abstract: uPD444012AGY-B55X-MJH
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD444012A-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444012A-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. The µPD444012A-X has two chip enable pins (/CE1, CE2) to extend the capacity.
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PD444012A-X
256K-WORD
16-BIT
PD444012A-X
48-pin
I/O16)
NEC marking BX
uPD444012AGY-B55X-MJH
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PD448012-X
Abstract: Cxxx uPD448012-X NEC marking BX
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD448012-X 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The μPD448012-X is a high speed, low power, 8,388,608 bits 524,288 words by 16 bits CMOS static RAM. The μPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.
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PD448012-X
512K-WORD
16-BIT
PD448012-X
48-pin
I/O16)
Cxxx
uPD448012-X
NEC marking BX
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD444012A-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The μPD444012A-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. The μPD444012A-X has two chip enable pins (/CE1, CE2) to extend the capacity.
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PD444012A-X
256K-WORD
16-BIT
PD444012A-X
48-pin
I/O16)
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UPD448012GY-B55X-MJH-A
Abstract: uPD448012GY-B70X-MJH
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD448012-X 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD448012-X is a high speed, low power, 8,388,608 bits 524,288 words by 16 bits CMOS static RAM. The µPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.
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PD448012-X
512K-WORD
16-BIT
PD448012-X
48-pin
I/O16)
UPD448012GY-B55X-MJH-A
uPD448012GY-B70X-MJH
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uPD444012AGY-B70X-MJH-A
Abstract: UPD444012AGY-B55X-MJH-A
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD444012A-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444012A-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. The µPD444012A-X has two chip enable pins (/CE1, CE2) to extend the capacity.
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PD444012A-X
256K-WORD
16-BIT
PD444012A-X
48-pin
I/O16)
uPD444012AGY-B70X-MJH-A
UPD444012AGY-B55X-MJH-A
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PD448012-X
Abstract: 12X18 PD448012
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD448012-X 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD448012-X is a high speed, low power, 8,388,608 bits 524,288 words by 16 bits CMOS static RAM. The µPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.
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PD448012-X
512K-WORD
16-BIT
PD448012-X
48-pin
I/O16)
12X18
PD448012
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD441000L-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD441000L-X is a high speed, low power, 1,048,576 bits 131,072 words by 8 bits CMOS static RAM. The µPD441000L-X has two chip enable pins (/CE1, CE2) to extend the capacity.
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PD441000L-X
128K-WORD
PD441000L-X
32-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD444012A-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444012A-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. The µPD444012A-X has two chip enable pins (/CE1, CE2) to extend the capacity.
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PD444012A-X
256K-WORD
16-BIT
PD444012A-X
48-pin
I/O16)
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USB6B1
Abstract: No abstract text available
Text: n il SGS-THOMSON “ 7# « æ m iC T fô M e s Application Specific Discretes A.S.D. U S B 6 BX USB PORT PROTECTION PRELIMINARY DATASHEET FEATURES • Full diode bridge with integratedclamping protection ■ Breakdown voltage : Vbr = 6V min. ■ Peakpulse powerdisspation : Ppp= 500W 8/2Qis
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT _ ¿¿PD442012L-X 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD442012L-X is a high speed, low power, 2,097,152 bits 131,072 words by 16 bits CMOS static RAM. The ^¡PD442012L-X has two chip enable pins (/CE1, CE2) to extend the capacity.
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PD442012L-X
128K-WORD
16-BIT
uPD442012L-X
PD442012L-X
48-pin
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Untitled
Abstract: No abstract text available
Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT _ ¿¿PD442000L-X 2M-BIT CMOS STATIC RAM 256K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ^¡PD442000L-X is a high speed, low power, 2,097,152 bits 262,144 words by 8 bits CMOS static RAM.
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PD442000L-X
256K-WORD
PD442000L-X
uPD442000L-X
32-pin
P32GU-50-9KH-1
PD442000L-X.
D442000LGU-BX-9JH:
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT _¿¿PD444012L-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD444012L-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM.
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PD444012L-X
256K-WORD
16-BIT
uPD444012L-X
PD444012L-X
48-pin
S48GY-50-MKH1
PD444012L-X.
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d44401
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT _ ¿ ¿ P D 4 4 4 0 1 0 L - X 4M-BIT CMOS STATIC RAM 512K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD444010L-X is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM.
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512K-WORD
uPD444010L-X
48-pin
PD444010L-X
PD444010L-X.
UPD444010LGY-B
12x18
d44401
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _/j P D 4 4 1 0 0 0 L - X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD441000L-X is a high speed, low power, 1,048,576 bits 131,072 words by 8 bits CMOSstatic RAM.
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128K-WORD
uPD441000L-X
32-pin
36-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT _ ¿ ¿ P D 4 4 2 0 0 0 L - X 2M-BIT CMOS STATIC RAM 256K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD442000L-X is a high speed, low power, 2,097,152 bits 262,144 words by 8 bits CMOS static RAM.
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256K-WORD
uPD442000L-X
PD442000L-X
32-pin
36-pin
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Marking m.1
Abstract: l 0534 Transistor L83
Text: NEC Compound Transistor I ï f / \ f 7 4# G A 1A 3Q $ R i = 1.0 kQ, R2= 10 k Q O — W V R, OGN1A3Q t 3 > 7° U / > 9 U T"ë £ i~t ÒE (T a = 25 °C ) m H& s fô 5e ¥ fie X faJS Æ V CBO 60 V a u ? ÿ - x . i - y ? ? i\ W l± VcEO 50 V • ■ / 9 • ^ —kTHWï.
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ iuPD441000L-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD441000L-X is a high speed, low power, 1,048,576 bits 131,072 words by 8 bits CMOS static RAM.
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iuPD441000L-X
128K-WORD
uPD441000L-X
PD441000L-X
32-pin
36-pin
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a70 8 pin ic
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / juPD42S16405L, 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE EDO D e s c rip tio n The jiPD42S16405L, 4216406L are 4,194,304wocds by 4 bits CMOS dynamic HAM w ith option«! hyperpage mode
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uPD42S16405L
uPD4216405L
jiPD42S16405L,
4216406L
304wocds
/IPD42S16405L
1PD42S16405L,
421S405L
26-pin
a70 8 pin ic
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ iuPD441000L-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD441000L-X is a high speed, low power, 1,048,576 bits 131,072 words by 8 bits CMOS static RAM.
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iuPD441000L-X
128K-WORD
uPD441000L-X
PD441000L-X
32-pin
36-pin
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