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    NEC MARKING 8L Search Results

    NEC MARKING 8L Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy
    54HC221AJ/883C Rochester Electronics LLC 54HC221AJ/883C - Dual marked (5962-8780502EA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy

    NEC MARKING 8L Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    code marking NEC

    Abstract: date code marking NEC g1683
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2610 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µ PA2610, which has a heat spreader, is P-channel MOS Field Effect Transistor designed for applications such as power switch of portable machine and so on.


    Original     		PA2610 PA2610, PA2610T1C code marking NEC date code marking NEC g1683 PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    renesas traceability

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 PDF

    7805 nec

    Abstract: nec 7805 7807 voltage regulator 7805 nec voltage regulator NEC JAPAN 7805 7807 regulator uPC78LO8 7805 SOT-89 1 in 7807 transistor pc781
    Text: AdLib OCR Evaluation BIPOLAR ANALOG INTEGRATED CIRCUIT yPC78LOO SERIES THREE TERMINAL POSITIVE VOLTAGE REGULATORS DESCRIPTION ThepPC781-00 series are monolithicthree terminal positive regulatorswhich employ internally current limiting, thermal shut down, output transistor safe area protection make


    Original     		yPC78LOO ThepPC781-00 uPC78LOOJ 7805 nec nec 7805 7807 voltage regulator 7805 nec voltage regulator NEC JAPAN 7805 7807 regulator uPC78LO8 7805 SOT-89 1 in 7807 transistor pc781 PDF

    smd code marking NEC

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
    Text: Power Management Devices Selection Guide > Power MOSFETs > ESD Protection Diodes > Regulators August 2008 www.am.necel.com/powermanagement TABLE OF CONTENTS Contents Low-Voltage Power By Part


    Original     		G18756EU3V0SG00 smd code marking NEC TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP PDF

    NEC V30MX

    Abstract: 8255a Max mode system in 8086 microprocessor v 12719 40673 71055 Rambus ASIC Cell 40673 cmos marking code C76 verilog code for 8254 timer IC Ensemble
    Text: CB-C8 3-VOLT, 0.5-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. July 1994 Description Figure 1. Typical CB-C8 Series Cell-Based ASIC NEC’s 3-volt CB-C8 cell-based ASIC series are ultra-high performance sub-micron CMOS products built within the OpenCAD Design SystemTM of NEC. The family allows


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    MARKING T6C

    Abstract: lga 1155 package Code T6S M33 TRANSISTOR 14SSOP QFN-36 LAND PATTERN 14LGA 36pin qfn marking 6-PIN PLASTIC TSON nec 44pin
    Text: Technical Note PACKAGES LINE-UP FOR RF AND MICROWAVE DEVICES Document No. PX10051EJ35V0TN 35th edition Date Published March 2010 NS NEC Electronics Corporation 2001, 2010 Printed in Japan • The information in this document is current as of March, 2010. The information is subject to change


    Original     		PX10051EJ35V0TN G0706 MARKING T6C lga 1155 package Code T6S M33 TRANSISTOR 14SSOP QFN-36 LAND PATTERN 14LGA 36pin qfn marking 6-PIN PLASTIC TSON nec 44pin PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321182, 44321322, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321182 is a 2,097,152-word by 18-bit, the µPD44321322 is a 1,048,576-word by 32-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using


    Original     		PD44321182, 32M-BIT PD44321182 152-word 18-bit, PD44321322 576-word 32-bit PD44321362 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321321, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit, the µPD44321321 is a 1,048,576-word by 32-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using


    Original     		PD44321181, 32M-BIT PD44321181 152-word 18-bit, PD44321321 576-word 32-bit PD44321361 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44322181, 44322321, 44322361 32M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The µPD44322181 is a 2,097,152-word by 18-bit, the µPD44322321 is a 1,048,576-word by 32-bit and the µPD44322361 is a 1,048,576-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using


    Original     		PD44322181, 32M-BIT PD44322181 152-word 18-bit, PD44322321 576-word 32-bit PD44322361 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44322182, 44322322, 44322362 32M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION SINGLE CYCLE DESELECT Description The µPD44322182 is a 2,097,152-word by 18-bit, µPD44322322 is a 1,048,576-word by 32-bit and the µPD44322362 is


    Original     		PD44322182, 32M-BIT PD44322182 152-word 18-bit, PD44322322 576-word 32-bit PD44322362 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44322183, 44322323, 44322363 32M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION DOUBLE CYCLE DESELECT Description The µPD44322183 is a 2,097,152-word by 18-bit, µPD44322323 is a 1,048,576-word by 32-bit and the µPD44322363 is


    Original     		PD44322183, 32M-BIT PD44322183 152-word 18-bit, PD44322323 576-word 32-bit PD44322363 PDF

    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

    Abstract: uPD65837 uPD65869 X17512 upd65839 RF Transistors Ceramic MARKING F25 marking code F302 535 D65841 uPD65851 X46358
    Text: Design Manual CMOS-8L Family CMOS Gate Array Ver. 5.0 Document No. A12158EJ5V0DM00 5th edition Date Published June 1999 N CP(K) 1997, 1998 Printed in Japan 1 [MEMO] 2 Design Manual A12158EJ5V0DM00 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS


    Original     		A12158EJ5V0DM00 Semiconductor2/9044 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR uPD65837 uPD65869 X17512 upd65839 RF Transistors Ceramic MARKING F25 marking code F302 535 D65841 uPD65851 X46358 PDF

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes PDF

    D65842

    Abstract: diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys
    Text: SEC CMOS-8L 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary Description O cto b er 1992 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family are ultra-high perform­ ance, sub-micron gate arrays, targeted for applications


    OCR Scan     		jPD65800 D65842 diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys PDF

    8251a usart interface from z80

    Abstract: 72065B verilog code for 8254 timer NEC V30MX Rambus ASIC Cell OPENCAD CMOS Block library nec floppy circuit NEC 71059 NEC 71051 V30MX
    Text: CB-C8 3-VOLT, 0.5-MICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. July 1994 Description Figure 1. Typical CB-C8 Series Cell-Based ASIC NEC’s 3-volt CB-C8 cell-based ASIC series are ultra-high performance sub-micron CMOS products built within the OpenCAD Design System of NEC. The family allows


    OCR Scan     		TMXP-200 L427525 8251a usart interface from z80 72065B verilog code for 8254 timer NEC V30MX Rambus ASIC Cell OPENCAD CMOS Block library nec floppy circuit NEC 71059 NEC 71051 V30MX PDF

    Untitled

    Abstract: No abstract text available
    Text: NEC PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT Description The /¿PD431232L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel memory cells. The use of this technology and unique peripheral circuits makes these products high-speed devices. These


    OCR Scan     		32K-WORD 32-BIT uPD431232L 768-word 32-bit 100-pin 00203i PD431232L. PD431232LGF: PDF

    a70 8 pin ic

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / juPD42S16405L, 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE EDO D e s c rip tio n The jiPD42S16405L, 4216406L are 4,194,304wocds by 4 bits CMOS dynamic HAM w ith option«! hyperpage mode


    OCR Scan     		uPD42S16405L uPD4216405L jiPD42S16405L, 4216406L 304wocds /IPD42S16405L 1PD42S16405L, 421S405L 26-pin a70 8 pin ic PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD78P0308 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The ¿¡PD78P0308 is a m em ber of the ¿¡PD780308 Subseries of the 78K/0 Series, in w hich the on-chip m ask ROM of the ¿¡PD780308 is replaced with a one-tim e PROM or EPROM.


    OCR Scan     		PD78P0308 PD78P0308 PD780308 78K/0 PD78P0308KL-T PDF

    Untitled

    Abstract: No abstract text available
    Text: P R E L IM IN A R Y DATA SHEET MOS INTEGRATED CIRCUIT /ZPD78P098A 8-BIT SINGLE-CHIP MICROCONTROLLER The /iPD78P098A is a member of the ^PD78098 subseries in the 78K/0 series and is provided with a one­ time PROM to which a program can be written only once, or an EPROM to which a program can be written,


    OCR Scan     		/ZPD78P098A /iPD78P098A PD78098 78K/0 PD78P098A /xPD78P098A U10203EJ1V0DS01 PDF

    D78P014

    Abstract: PD78P014 P25Y 14gc D78P0 d78p014 nec
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUII _ ¿ ¿ P P 7 8 P 0 1 4 8-BIT SINGLE-CHIP M ICROCONTROLLER DESCRIPTION T h e ;iP D 7 8 P 0 1 4 is a m em b e r of the pP D 78014 su b se rie s of 78K/0 se rie s products. It u se s a one-tim e-program m able


    OCR Scan     		uPD78P014 uPD78014 78K/0 PD78P014 VP15-202-1 IR3D-202-1 iiPD78P014CW: 64-pin PD78P014DW: 64-pln D78P014 P25Y 14gc D78P0 d78p014 nec PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT 8M-BIT Rambus DRAM 1M-WORD X 8-BIT X 1-BANK Description The 8-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 1M words by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling Logic (RSL)


    OCR Scan     		b45752S 0Gb411S PDF

    MKL series

    Abstract: 78C18 UPD78C14 78C17 upd78c17 87AD d78c17 78C18GQ
    Text: DATA SH EET MOS INTEGRATED CIRCUIT ß PD78C17 A , 78C18(A) 8-BIT SINGLE-CHIP MICROCOMPUTER (WITH A /D CONVERTER) The jUPD78C18(A) is an 8-bit CMOS microcomputer which integrates 16-bit ALU, ROM, RAM, an A/D converter, a m ulti-function tim er/event counter, and a general-purpose serial interface onto a single chip, and whose memory


    OCR Scan     		uPD78C17 uPD78C18 jUPD78C18 16-bit /iPD78C18 PD78C17 MKL series 78C18 UPD78C14 78C17 87AD d78c17 78C18GQ PDF