d768 transistor
Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent
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NE32584C
NE32584C
d768 transistor
3-pin D128 transistor
transistor D128
transistor D586
D1515
ne32584c application note
transistor d436
d388 transistor
D832 transistor
transistor D442
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EPBAD45
Abstract: ul508a EPBCD45 feeder UL508 EPBAD42 EPBCD42
Text: IEC Enclosed Listed Power Distribution Blocks Features and Approvals: 1 UL Listed UL1953 2 Flexible Stranded Wire Approval 3 High Short Circuit Current Rating UL508A 4 Integral dovetail features for multi-line stackup 5 Meets Feeder spacing requirements of UL508A
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UL1953)
UL508A
6485K
SK-BH/8-09/2
EPBAD45
ul508a
EPBCD45
feeder
UL508
EPBAD42
EPBCD42
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NEC JAPAN MADE 282 185 01
Abstract: ADJ 809 13-100000 NEC AN 1090-0000
Text: Application Note Usage and Application of µPC8130TA and µPC8131TA Variable Gain Amplifier Silicon MMICs for AGC Unit of Mobile Communication Systems Document No. P13856EJ1V0AN00 1st edition Date Published February 1999 N CP(K) Printed in Japan 1999
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PC8130TA
PC8131TA
P13856EJ1V0AN00
pro88-6130
NEC JAPAN MADE 282 185 01
ADJ 809
13-100000
NEC AN
1090-0000
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DMD43301
Abstract: NL10276BC30-17 SM02
Text: DMD43301 Specifications and Applications Information 10/17/06 Four Lamp DC to AC Inverter Preliminary The ERG DMD43301 DMD Series DC to AC inverter DMD Series features onboard connectors and can be easily dimmed using the onboard PWM Dimming or an external PWM
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DMD43301
DMD43301
NL10276BC30-17.
NL10276BC30-17
SM02
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DMD42696
Abstract: NL12876BC26-21
Text: DMD42696 Specifications and Applications Information 05/01/04 Four Tube DC to AC Inverter Preliminary Package Configuration 1.03 [26,2] MAX .809[20,54] Output 2x 1 Powered by a regulated +12 Volt DC source, the DMD42696 is designed to power the backlight of the NEC
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DMD42696
DMD42696
NL12876BC26-21.
NL12876BC26-21
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nec 2412
Abstract: N2PB2426 crouse-hinds D2PB D2PB02 2412 NEC
Text: N2PB Circuit Breaker Panelboards Factory Sealed Single & Two-Pole Breakers 1A Watertight† Cl. I, Div. 2, Groups C, D Weatherproof Cl. II, Div. 2, Groups F, G Corrosion-Resistant Dust-tight NEMA 3, 7CD Div. 2 , 9FG (Div. 2), 12 Applications: • N2PB panelboards are for use in central
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N2PB1426
N2PB2426
nec 2412
N2PB2426
crouse-hinds D2PB
D2PB02
2412 NEC
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NL10276BC30-18
Abstract: DMD43584F SM02
Text: DMD43584F Specifications and Applications Information 07/02/07 Four Lamp DC to AC Inverter Preliminary The ERG DMD43584F DMD Series DC to AC inverter DMD Series features onboard connectors and can be easily dimmed using the onboard PWM Dimming or an external PWM
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DMD43584F
DMD43584F
NL10276BC30-18.
NL10276BC30-18
SM02
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NL10276BC30-17
Abstract: No abstract text available
Text: DMD43471 Specifications and Applications Information Four Lamp DC to AC Inverter 01/19/11 Package Configuration 1.03 [26,2] MAX .809 [20,54] PCB components are shown for reference only. Actual product may differ from that shown. The ERG DMD43471 DMD Series DC to AC inverter
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DMD43471
DMD43471
NL10276BC30-17,
NL10276BC30-18,
NL12876BC26-25
NL10276BC30-17
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NL10276BC30-18
Abstract: NL10276BC30-17 IS NL12876BC26-25 DMD43471 NL10276BC30-17 SM02
Text: DMD43471 Specifications and Applications Information 06/04/09 Four Lamp DC to AC Inverter Preliminary Package Configuration 1.03 [26,2] MAX .809 [20,54] PCB components are shown for reference only. Actual product may differ from that shown. The ERG DMD43471 DMD
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DMD43471
DMD43471
NL10276BC30-17,
NL10276BC30-18,
NL12876BC26-25.
NL10276BC30-18
NL10276BC30-17 IS
NL12876BC26-25
NL10276BC30-17
SM02
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NEC D 809 F
Abstract: NEC D 809 NEC D 809 L NEC D 809 k
Text: DATA SHEET NEC / MOS FIELD EFFECT TRANSISTO R 2SK1586 N-CHANNEL MOS FET FOR SWITCHING The 2S K 1586, N-channel vertical type MOS FET, is a switching PACKAG E D IM E N S IO N S U n it : mm device which can be driven directly by the output of ICs having a 5 V
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2SK1586
2SK1586,
NEC D 809 F
NEC D 809
NEC D 809 L
NEC D 809 k
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NEC 824A
Abstract: NEC D 809 2SD811 TOSHIBA NEC D 809 k nec k 813 25c3325 2sc2233 2SB837 2sc1741 2SD683A
Text: - Z tt S € Type No. Manuf. 2SD 792 o ' fâ T 2SD 793 h m 2SD 794 h m 2SD 795 _ 0 a 2SD 796 s±mm 2SD 798 M M 2SD 800 2SD 801 2SD 802 2SD 803 2SD 804 ^ 2SD 806 2SD 807 », 2SD 808 2SD 809 2SD 809 1 2SD 810 - 2SD 813 2SD 814 ^ 2SD 816 S S TOSHIBA m NEC 2SD330
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2SD792
2SD793
2SD794
2SD795
2SD795A
2SD796
2SD798
2SD799
2SD800
2SD801
NEC 824A
NEC D 809
2SD811 TOSHIBA
NEC D 809 k
nec k 813
25c3325
2sc2233
2SB837
2sc1741
2SD683A
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NEC k 2134 transistor
Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm
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NE32584C
NE32584C
NE32584C-T1A
NE32584C-SL
NE32584C-T1
NEC k 2134 transistor
k 2134 nec
nec gaas fet marking
NEC D 809 k
NEC 2134 transistor
NE32584
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NE32584C-T1
Abstract: nec 3435 transistor am 4428
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.
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NE32584C
NE32584C-T1A
NE32584C-T1
nec 3435 transistor
am 4428
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uc2801
Abstract: pc2801 PH302 MPD6122G-XXX PH302B upc2801 SE303A-C SE313 mpd6122 NEC D 809 F
Text: DATA S H E E T SEC BIPOLAR ANALOG INTEGRATED CIRCU ITS E L E C T R O N DE VI C E u P C 2 8 A , u P C 2 8 1 IN FR A RED R EM O TE CO N TR O L P R E A M P L IF IE R S The /iPC2800A and fxPC2801 A are bipolar analog ICs specifically developed for use in infrared remote control
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uPC2800A
uPC2801
006-OOO2
SE303A-C
SE307-C
SE1003-C
SE313
2SC3616,
2SD1615,
2SC2001
uc2801
pc2801
PH302
MPD6122G-XXX
PH302B
mpd6122
NEC D 809 F
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transistor NEC D 882 p
Abstract: 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTO R 4 PINS SU PER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters fT = 6.5 G H zT Y P . • Low Noise, High Gain
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2SC5011
2SC5011-T1
transistor NEC D 882 p
393AN
transistor 2sc 3203
nec d 1590
2sc 1329
transistor NEC b 882
nec a 634
e50p
NEC D 822 P
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NE850R5
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device
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NE850R5
NE850R599
CODE-99
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613 GB 123 CT
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The /xPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE D R A W IN G S
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uPA812T
2SC4227)
/xPA812T
613 GB 123 CT
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63000-000
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device
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NE850R5
E850R599
CODE-99
63000-000
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D4242-1
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT M E C J L /P D 4 2 S 4 2 1 0 ,4 2 4 2 1 0 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The ¿/PD42S4210,424210 are 262 144 words by 16 bits dynamic CMOS RAMs with optional
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16-BIT,
uPD42S4210
uPD424210
PD42S4210
44-pin
40-pin
JJPD42S4210-70
D4242-1
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2sc5194-t1
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR P A C K AG E D R A W IN G S FEATU RES • Low Voltage O peration, Low Phase D istortion • Low Noise Unit: mm N F = 1.5 dB TYP. @ V ce = 3 V, Ic = 7 mA, f = 2 GHz
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2SC5194
2SC5194-T2
2sc5194-t1
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21134 015
Abstract: nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051
Text: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OlPs = 22 dBm V67 , OlPs = 23 dBm (V68) typ. at f = 2 GHz
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NE38018
NE38018-T1
NE38018-T2
21134 015
nec K 3570
T 318 TE 2395
marking v67
of ic ST 4051
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Untitled
Abstract: No abstract text available
Text: PRELIM INARY DATA S H E E T MOS INTEGRATED CIRCUIT >IEC /J P D 4 2 S 4 2 1 0 ,4 2 4 2 1 0 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, HYPER PA GE MODE, B Y T E READ/W RITE MODE Description The /^ D 4 2S 42 1 0,424210 are 262 144 words by 16 bits dynamic CM O S RAMs with optional
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16-BIT,
/PD42S4210
44-pin
40-pin
PD42S4210-70
26-29i8:
O35-0
0016i8
P40LE-400A-2
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. G a = 14.5 dB typ. O IP 3 = 22 dBm V67 , O IP 3 = 23 dBm (V68) typ. at f = 2 GHz
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NE38018
NE38018-T1
NE38018-T2
Rn/50
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IC SEM 2105
Abstract: 3771 nec
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
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2SC5008
2SC5008
IC SEM 2105
3771 nec
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