NEC ASIC PRODUCT LETTER Search Results

NEC ASIC PRODUCT LETTER Result Highlights (5)

Part	Manufacturer	Description
DF2B5M4ASL	Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2)
74HC4053FT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
TCR5RG28A	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F

NEC ASIC PRODUCT LETTER Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
a1701 Abstract: CPRI CDR obsai NEC Technologies nec 0511 cpri Text: SerDes ASIC Technology Macro for 622 Mbps to 3.2 Gbps in CB-130 ASIC technology Product Letter Description With the internal nick-name LINUS, NEC Electronics has developed a high speed interface SerDes macro for NEC's advanced CB-130 ASIC technology. It achieves data	Original	CB-130 A17012EE1V0PL00 a1701 CPRI CDR obsai NEC Technologies nec 0511 cpri	PDF
CB-11 Abstract: nec asic product letter nec cb cell product letter Text: 0.18 µm ASIC Technology CB-11 Cell-based CMOS ICs Product Letter Description NEC’s 0.18 µm CB-11 family incorporates ultra-high performance, deep sub-micron cellbased ASIC’s for high-end applications requiring high speeds, high integration density and	Original	CB-11 A14226EE2V0PL00 nec asic product letter nec cb cell product letter	PDF
0.18-um CMOS technology characteristics Abstract: NEC 71055 NEC V30MX DSPG 71055 STEPS 30175 V30MX VR10000 A1246 CMOS-10 Text: DATA SHEET PRODUCT LETTER CB-C10 2.5 Volt 0.25-Micron CMOS Cell-Based ASIC PRELIMINARY Figure 1. Chip Size Package CSP Description NEC’s 0.25 µm (0.18 µm eff.) CB-C10 family incorporates ultra-high performance, deep submicron cell-based ASIC’s for high-end	Original	CB-C10 25-Micron CB-C10 GB-MK14 0.18-um CMOS technology characteristics NEC 71055 NEC V30MX DSPG 71055 STEPS 30175 V30MX VR10000 A1246 CMOS-10	PDF
k941 Abstract: k 941 CMGS nec asic product letter sequential CIRCUIT nec ddr nec cb cell product letter Text: ISSP/150 nm ASIC Technology ISSP1 - Standard Family Product Letter Description NEC‘s Instant Silicon Solution Platform ISSP is an ASIC architecture, that offers high system performance – up to 150 MHz system frequency and up to 250 MHz for local areas – in 0.13 µm (drawn) gate length technology at low NRE. ISSP	Original	ISSP/150 lines5030 A16448EE5V0PL00 k941 k 941 CMGS nec asic product letter sequential CIRCUIT nec ddr nec cb cell product letter	PDF
ISSP90 Abstract: FCBGA 1849-pin mb 1155 LVPECL25 Text: ISSP/ 90 nm ASIC Technology ISSP90 - Standard Family Product Letter Description NEC Electronics has introduced its next generation of Instant Silicon Solutions Platform ISSP™ with the ISSP90 Standard family, based on the company’s latest state-of-the-art	Original	ISSP90 A16971EU3V0PBE1 FCBGA 1849-pin mb 1155 LVPECL25	PDF
Untitled Abstract: No abstract text available Text: SYSTEM-ON-CHIP LITE System-on-Chip Gate Array with ARM7TDMI subsystem Product Letter Description System-on-Chip Lite SoCLite is NEC’s new approach to low- to mid-volume system-onchip projects. SoCLite is based on standard ASIC technology and consists of two blocks:	Original	A15045EE4V0PL00	PDF
ARM7tdmi functional diagram Abstract: SMALL ELECTRONICS PROJECTS free 32-bit ARM A1504 A15402EE1V0UM00 AMBA AHB memory controller AMBA APB UART Text: SYSTEM-ON-CHIP LITE System-on-Chip ARM7TDMI -based, customizable controller Product Letter Description System-on-Chip Lite SoCLite is NEC’s new approach for low- to mid-volume system-on-chip projects. The SoCLite device is based on standard ASIC technology and consists of two blocks: an ARM7TDMI®	Original	A15045EE5V3PL00 ARM7tdmi functional diagram SMALL ELECTRONICS PROJECTS free 32-bit ARM A1504 A15402EE1V0UM00 AMBA AHB memory controller AMBA APB UART	PDF
A1430 Abstract: ea-9hd Text: EA-9HD ASIC Technology 0.35 µm Embedded Array Product Letter Description The high performance density-enhanced 0.35 µm 0.25 µm effective EA-9HD embedded array family offers support for embedded high density macros combined with a short TAT of a gate array resulting in a time-to-market advantage. NEC Electronics combines high	Original	A14305EE2V0PL00 A1430 ea-9hd	PDF
CMOS-N5 Abstract: 45600 65882 NEC 65881 65881 sunrise tqfp nec tqfp 304 QFP 65882 nec Text: 0.5 µm ASIC Technology CMOS-N5 Gate Array ICs Product Letter Description To serve the low-end gate-array market, where 5 Volt supply voltage is still a common requirement, NEC has released its 0.5 µm CMOS-N5 family of cost optimised gate-arrays. Drastic cost reductions have been achieved compared with the conventional CMOS-6 1 µm	Original		PDF
32 bit AHB lite bus Abstract: ARM7 microcontroller pin configuration ARM7TDMI-STM-based ARM7TDMI-S external bus interface unit multiport memory controller EB-SOCLITEPLUS-EP1S60V1 suffix part number NEC microcontroller free arm controller bridge 4580 a16902ee Text: SYSTEM-ON-CHIP LITE + System-on-Chip Extended ARM7TDMI-STM-based, customizable microcontroller Product Letter • ARM7TDMI-S-based customizable microcontroller • Development platform for ARM7TDMI-S-based System-on-Chip design • Easy development and veriﬁcation ﬂow	Original	A16582EE6V0PL00 32 bit AHB lite bus ARM7 microcontroller pin configuration ARM7TDMI-STM-based ARM7TDMI-S external bus interface unit multiport memory controller EB-SOCLITEPLUS-EP1S60V1 suffix part number NEC microcontroller free arm controller bridge 4580 a16902ee	PDF
a1698 Abstract: 8B10B asic nec 928 Cell-based ASIC 8B10B Text: ISSP/150 nm ASIC Technology ISSP1 - High-Speed Interface Family Product Letter Description The ISSP1-HSI, the Instant Silicon Solutions PlatformTM ISSP High-Speed Interface (HSI) family, is a new class of ASIC device that features built-in, highspeed Serializer/Deserializer (SerDes) transceiver cores. Ideal for mid-volume	Original	ISSP/150 A16984EE3V0PL00 a1698 8B10B asic nec 928 Cell-based ASIC 8B10B	PDF
66207 Abstract: nec 151 nec asic product letter Text: 150 µm Structured ASICs CMOS-12M Structured Array Product Letter Description CMOS-12M is NEC Electronics’ new structured array technology with embedded highdensity SRAMs and analog PLLs. The technology enables the integration of large size SRAM modules in structured array and is capable of supporting up to 2.6 Mb of embedded	Original	CMOS-12M embedd6503-1327 A17511EE2V0PL00 66207 nec 151 nec asic product letter	PDF
NZ70008H Abstract: STEPS 30175 STR 6755 k2736 NZ70 NEC V30MX V30MX nec 2508 nec 772 K398 Text: DATA SHEET PRODUCT LETTER CB-C9VX/VM 0.35-Micron CMOS Cell-Based ASICs Description Figure 1: System-Level-Integration The CB-C9VX/VM family offers ultra-high performance, deep submicron cell-based ASICs for high-end applications requiring high speeds, high integration density and low power	Original	35-Micron 35micron 27-micron GB-MK14 NZ70008H STEPS 30175 STR 6755 k2736 NZ70 NEC V30MX V30MX nec 2508 nec 772 K398	PDF
ARM7 instruction set Abstract: 8 bit multiplier free 32-bit ARM block diagram for barrel shifter 8 bit barrel shifter 4 bit barrel shifter block diagram ARM7TDMI Text: RISC CPU ASIC Core Library ARM7TDMI 32-bit Core Product Letter Description The ARM7TDMI is an ARM7 32-bit RISC processor core with the Thumb extension, Embedded ICE for ‘in ASIC’ debugging and a DSP enhanced multiplier. Thumb offers 32-bit RISC performance at	Original	32-bit 16-bit A14719EE1V0PL00 ARM7 instruction set 8 bit multiplier free 32-bit ARM block diagram for barrel shifter 8 bit barrel shifter 4 bit barrel shifter block diagram ARM7TDMI	PDF

lvds to eDP Abstract: CB-130UH Power consumption of FCBGA nec asic product letter nec cb cell-based product letter Text: CB-130 0.13 µm Features >> 0.13 µm drawn silicon gate CMOS process >> Four transistor characteristics (low power, mid-range power, high speed, ultra-high speed) selectable on the same chip >> All-layer Cu wiring with up to 9 metal-layers options CB-130 Cell-based CMOS ASIC	Original	CB-130 CB-130 CB-130, A15976EE3V0PL00 lvds to eDP CB-130UH Power consumption of FCBGA nec asic product letter nec cb cell-based product letter	PDF
32 bit AHB lite bus Abstract: usb to rj45 connection diagram sub-d9 F uclinux JTAG MINI nec cpld SUBD25 Text: SYSTEM-ON-CHIP LITE + System-on-Chip Start it! Development Board Product Letter Description The System-on-Chip Lite+ Start it! development board is a starter kit for evaluation of the System-onChip Lite+ architecture by system designers who want to enter the ARM-based System-on-Chip world	Original	U17431EE1V0PL00 32 bit AHB lite bus usb to rj45 connection diagram sub-d9 F uclinux JTAG MINI nec cpld SUBD25	PDF
nec 0511 Abstract: A1504 UDL 2003 Text: SYSTEM-ON-CHIP LITE System-on-Chip Design Flow Product Letter Introduction System-on-Chip Lite SoCLite is NEC’s new approach for low- to mid-volume SOC projects. Due to the fact, that the customer is required to design the UDL (User Defined Logic) area of the SoCLite device a smooth an easy design flow becomes important. The	Original	A15047EE1V2PL00 nec 0511 A1504 UDL 2003	PDF
ARM710T Abstract: NEC 32bit Processor D-70565 I-00139 Text: RISC CPU ASIC Core Library ARM710T 32-bit Core with Cache Product Letter Description The ARM710T is a general-purpose 32-bit microprocessor with 8 KB cache, enlarged write buffer and Memory Management Unit MMU combined in a single chip. The CPU within the ARM710T is the	Original	ARM710T 32-bit A14721EE1V0PL00 NEC 32bit Processor D-70565 I-00139	PDF
electrical project report Abstract: No abstract text available Text: CAD Design Services Static Timing Analysis & Postlayout Timing Fix Product Letter Description In deep submicron designs the impact of the wire gets more and more important and has to be taken into account already during initial logical synthesis. This is done by using	Original	A14358EE1V0PL00 electrical project report	PDF
ARM946 Abstract: A14702EE3V0PL00 CB12 nec asic product letter Text: CB-12 0.15 µm Features >> 0.15 µm drawn, 0.11 µm effective Cobalt Salicide CMOS process >> Three transistor characteristics (low power, standard, high performance) selectable on the same chip >> Up to 8 metal layers CB-12 Cell-based CMOS IC Featuring the selection of three different transistor characteristics on the same chip for achieving	Original	CB-12 CB-12 A14702EE3V0PL00 ARM946 A14702EE3V0PL00 CB12 nec asic product letter	PDF
e210882 Abstract: dell e210882 front 34 pin connector ibm pc FRONT PANEL connector CIRCUIT e210882 e210882* cmos reset intel Pentium 111 E210882 dell front connector e210882 dell e210882 e210882 beep codes Intel Desktop Board E210882 ibm E210882 Text: Intel Desktop Board D850EMD2/D850EMV2 Technical Product Specification April 2002 Order Number: A94395-001 The Intel® Desktop Boards D850EMD2/D850EMV2 may contain design defects or errors known as errata that may cause the product to deviate from published specifications.	Original	D850EMD2/D850EMV2 A94395-001 D850EMD2/D850EMV2 D850EMD2 D850EMV2 MV85010A GateA20 e210882 dell e210882 front 34 pin connector ibm pc FRONT PANEL connector CIRCUIT e210882 e210882* cmos reset intel Pentium 111 E210882 dell front connector e210882 dell e210882 e210882 beep codes Intel Desktop Board E210882 ibm E210882	PDF
MF1359-02 Abstract: Q11C02RX Q22MA306 E0C33202 E0C33204 E0C33A104 PC-9800 S1C33L01 EM33-4M ASM-33 Text: MF1359-02 CMOS 32-BIT SINGLE CHIP MICROCOMPUTER S1C33 ASIC DESIGN GUIDE Embedded Array S1X50000 Series NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.	Original	MF1359-02 32-BIT S1C33 S1X50000 F-91976 E-08190 MF1359-02 Q11C02RX Q22MA306 E0C33202 E0C33204 E0C33A104 PC-9800 S1C33L01 EM33-4M ASM-33	PDF
SETE Abstract: N1 ASIC EPOD332128 Text: MF1359-02 CMOS 32-BIT SINGLE CHIP MICROCOMPUTER S1C33 ASIC DESIGN GUIDE Embedded Array S1X50000 Series NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.	Original	MF1359-02 32-BIT S1C33 S1X50000 E-08190 SETE N1 ASIC EPOD332128	PDF
se617 Abstract: vhdl code for 74192 UPD65891 a1387 transistor F495 transistor f422 equivalent tt 2246 Transistor TT 2246 transistor f422 UPD65883 Text: Design Manual CMOS-N5 Series CMOS Gate Array Ver. 7.0 Document No. A13826EJ7V0DM00 7th edition Date Published March 2004 N CP(K) c Printed in Japan [MEMO] 2 Design Manual A13826EJ7V0DM NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the	Original	A13826EJ7V0DM00 A13826EJ7V0DM se617 vhdl code for 74192 UPD65891 a1387 transistor F495 transistor f422 equivalent tt 2246 Transistor TT 2246 transistor f422 UPD65883	PDF

NEC ASIC PRODUCT LETTER Search Results

NEC ASIC PRODUCT LETTER Result Highlights (5)

NEC ASIC PRODUCT LETTER Datasheets Context Search

a1701

CB-11

0.18-um CMOS technology characteristics

k941

ISSP90

Untitled

ARM7tdmi functional diagram

A1430

CMOS-N5

32 bit AHB lite bus

a1698

66207

NZ70008H

ARM7 instruction set

lvds to eDP

32 bit AHB lite bus

nec 0511

ARM710T

electrical project report

ARM946

e210882

MF1359-02

SETE

se617