Untitled
Abstract: No abstract text available
Text: 3W, L & S-BAND NE6500379A MEDIUM POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A Source • LOW THERMAL RESISTANCE: 5°C/W Functional Characteristics 0.2 ± 0.1
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NE6500379A
IMT-2000,
IMT2000,
24-Hour
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NE6500379A
Abstract: NE6500379A-T1
Text: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER NE6500379A GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP • HIGH LINEAR GAIN: 10 dB TYP 5.5 BOTTOM 3.8
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NE6500379A
NE6500379A
NE6500379A-T1
24-Hour
NE6500379A-T1
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Untitled
Abstract: No abstract text available
Text: NONLINEAR MODEL NE6500379A SCHEMATIC Q1 RDX 0.2 ohms LGX LG 0.001 nH 0.68 nH LD 0.55 nH LDX 0.015 nH DRAIN RDBX 480 ohms GATE CBSX 100 pF CGS PKG 0.1 pF CDS PKG 0.1 pF RSX 0.2 ohms FET NONLINEAR MODEL PARAMETERS 1 LSX 0.001 nH SOURCE Parameters Q1 Parameters
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NE6500379A
1e-14
10e-12
5e-12
25e-12
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nec 0882
Abstract: No abstract text available
Text: 3W, L/S-BAND MEDIUM POWER NE6500379A GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP 1.5 – 0.2 4.2 MAX Source • HIGH LINEAR GAIN: 10 dB TYP Drain Drain
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NE6500379A
24-Hour
nec 0882
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nec 0882
Abstract: NEc 79A 8582
Text: 3W, L/S-BAND NE6500379A MEDIUM POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A Source • LOW THERMAL RESISTANCE: 5 C/W Functional Characteristics 0.2 – 0.1
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NE6500379A
IMT-2000,
IMT2000,
24-Hour
nec 0882
NEc 79A
8582
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transistor NEC D 882 p
Abstract: nec d 882 p datasheet nec d 882 p nec d 882 p transistor nec 0882 GRM40X7R104K025BL AF127 100A0R5 case transistor 79A IMT-2000
Text: NEC'S 3W, L/S-BAND NE6500379A MEDIUM POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A Source • LOW THERMAL RESISTANCE: 5 C/W Functional Characteristics 0.2 – 0.1
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NE6500379A
transistor NEC D 882 p
nec d 882 p datasheet
nec d 882 p
nec d 882 p transistor
nec 0882
GRM40X7R104K025BL
AF127
100A0R5
case transistor 79A
IMT-2000
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NE6500379A
Abstract: NE6500379A-T1
Text: DATA SHEET N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power CW with high
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NE6500379A
NE6500379A
NE6500379A-T1
NE6500379A-T1
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1E-14
Abstract: No abstract text available
Text: NONLINEAR MODEL NE6500379A SCHEMATIC Q1 RDX 0.2 ohms LGX LG 0.001 nH 0.68 nH LD 0.55 nH LDX 0.015 nH DRAIN RDBX 480 GATE CDS PKG 0.1 pF CBSX 100 CGS PKG 0.1 pF RSX 0.2 ohms LSX 0.001 nH SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1 Parameters
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Original
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PDF
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NE6500379A
1e-14
10e-12
5e-12
25e-12
24-Hour
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NE650379A
Abstract: No abstract text available
Text: 3W, L/S-BAND MEDIUM POWER NE6500379A GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP • HIGH LINEAR GAIN: 10 dB TYP 5.5 BOTTOM 3.8 • HIGH POWER ADDED EFFICIENCY: 50% TYP @
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PDF
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NE6500379A
24-Hour
NE650379A
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nec 0882
Abstract: GRM40X7R104K025BL IMT-2000 NE6500379A NE6500379A-T1
Text: NEC'S 3W, L/S-BAND NE6500379A MEDIUM POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A Source • LOW THERMAL RESISTANCE: 5 C/W Functional Characteristics 0.2 – 0.1
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NE6500379A
nec 0882
GRM40X7R104K025BL
IMT-2000
NE6500379A
NE6500379A-T1
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GL 7812
Abstract: ATC 2603 LDMOS NEC
Text: N PRELIMINARY DATA SHEET IO 3W, L/S-BAND MEDIUM POWER NE552R479A SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE • SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • CLASS AB OPERATION Linear Gain1 IN • ANALOG CELLULAR PHONES:
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NE552R479A
24-Hour
GL 7812
ATC 2603
LDMOS NEC
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FET marking code g5d
Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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R09CL0001EJ0100
PX10727EJ02V0PF)
FET marking code g5d
PG2179TB
marking code C3E SOT-89
marking code C1E mmic
marking code C1G mmic
2SC3357/NE85634
PG2163T5N
sot-23 g6g
PC8230TU
marking code C1H mmic
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NE650R279A-T1
Abstract: NE6500379A NE650R279A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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nec mosfet marked v75
Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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G0706
PX10727EJ02V0PF
nec mosfet marked v75
NEC Ga FET marking code T79
FET marking code g5d
marking code C1G mmic
LGA 1155 PIN diagram
PB1507
marking code C1E mmic
marking code C1H mmic
PC8230TU
MMIC SOT 363 marking CODE 77
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uPD16305
Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.
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PD43256A>
PD43256A
X13769XJ2V0CD00
PD750004
PD750006
PD750008
PD75P0016
PD750104
PD750106
PD750108
uPD16305
uPD63724A
upc5024
UPC5023
2SC1940
uPC1237
uPD65656
UPC458
UPC2710
UPD65943
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nf025
Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920
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X13769XJ2V0CD00
950MHz
500MHz
PC2794
PC1687
PC2744
PC2775/µ
nf025
NE27283
upc27
x-band power transistor 100W
NE42484
P147D
2SK2396
uPG508
nf025db
2SC5408
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lg crt monitor circuit diagram
Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJGV0SG00
lg crt monitor circuit diagram
micro servo 9g
samsung lcd tv power supply diagrams
MP 1008 es
uPa2003
8049 microcontroller APPLICATION
LG lcd tv tuner
pioneer car dvd service manual
lg washing machine circuit diagram
8ch pnp DARLINGTON TRANSISTOR ARRAY
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100A5R1CP150X
Abstract: IMT-2000 NE651R479A NE651R479A-A NE651R479A-T1-A ATC 1084
Text: NEC's 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
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NE651R479A
IMT-2000,
NE651R479A
100A5R1CP150X
IMT-2000
NE651R479A-A
NE651R479A-T1-A
ATC 1084
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GaAs MESFET
Abstract: NE6500379A
Text: PRELIMINARY DATA SHEET INIE C 3W, L/S-BAND MEDIUM POWER GaAs MESFET FEATURES_ OUTLINE DIMENSIONS NE6500379A Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE • HIGH OUTPUT POWER: +35 dBm TYP PACKAGE OUTLINE 79A • HIGH LINEAR GAIN: 10 dB TYP
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OCR Scan
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NE6500379A
NE6500379A
GaAs MESFET
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET_ N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power CW with high
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OCR Scan
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PDF
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NE6500379A
NE6500379A
NE6500379A-T1
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nec 0882
Abstract: GRM40X7R104K025BL nec ic 8582 nec d 882 p 100A470CP150X tajb475*010r NE6500379A NE6500379A-T1 GRM40-X7R104K025BL TF-100637
Text: 3W, L/S-BAND MEDIUM POWER GaAs MESFET NE6500379A OUTLINE DIMENSIONS FEATURES Units in mm • LOW C OST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP • HIGH LINEAR GAIN: 10 dB TYP • HIGH POWER ADDED EFFICIENCY: 50% TYP @
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OCR Scan
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PDF
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NE6500379A
NE6500379A
24-Hour
nec 0882
GRM40X7R104K025BL
nec ic 8582
nec d 882 p
100A470CP150X
tajb475*010r
NE6500379A-T1
GRM40-X7R104K025BL
TF-100637
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES NE6500379A Units in mm LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A HIGH OUTPUT POWER: +35 dBm TYP HIGH LINEAR GAIN: 10 dB TYP HIGH POWER ADDED EFFICIENCY: 50% TYP @
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OCR Scan
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PDF
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NE6500379A
NE6500379A
NE6500379A-T1
24-Hour
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER GaAs MESFET FEATURES NE6500379A OUTLINE DIMENSIONS Units in mm LOW COST PLASTIC SURFACE MOUNT PACKAGE HIGH OUTPUT POWER: +35 dBm TYP PACKAGE OUTLINE 79A HIGH LINEAR GAIN: 10 dB TYP HIGH POWER ADDED EFFICIENCY: 50% TYP @
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OCR Scan
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PDF
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NE6500379A
NE6500379A
NE6500379A-T1
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES NE6500379A Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP • HIGH LINEAR GAIN: 10 dB TYP • HIGH POWER ADDED EFFICIENCY: 50% TYP @
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OCR Scan
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NE6500379A
NE6500379A
NE6500379A-T1
24-Hour
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