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Catalog Datasheet	MFG & Type	PDF	Document Tags
0.18 um CMOS Abstract: CMOS Process Family varactor diode parameter "X-Fab" 0.18 um CMOS Process rpp1k1 ne3 MOS3ST BEol 0.18-um inductance varactor ghz Text: 0.18 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XC018 RF CMOS Modular 0.18 µm CMOS process available for RF and mixed-signal/analog applications Module Overview CORE MOSST Poly Gate Cross Section Standard 1.8V MOS module MOSLP Low power 1.8V MOS module	Original	PDF	XC018 IMD35 0.18 um CMOS CMOS Process Family varactor diode parameter "X-Fab" 0.18 um CMOS Process rpp1k1 ne3 MOS3ST BEol 0.18-um inductance varactor ghz
CMOS Abstract: MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model Text: 0.18 µm CMOS Process XC018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular RF enabled CMOS Logic and Analog Technology 0.18-micron drawn gate length N-well process, modules are also available for metal-insulatormetal capacitors, high resistive poly, dual gate	Original	PDF	XC018 18-micron XC018 CMOS MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model

Catalog Datasheet

MFG & Type

PDF

Document Tags

0.18 um CMOS

Abstract: CMOS Process Family varactor diode parameter "X-Fab" 0.18 um CMOS Process rpp1k1 ne3 MOS3ST BEol 0.18-um inductance varactor ghz
Text: 0.18 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XC018 RF CMOS Modular 0.18 µm CMOS process available for RF and mixed-signal/analog applications Module Overview CORE MOSST Poly Gate Cross Section Standard 1.8V MOS module MOSLP Low power 1.8V MOS module

Original

PDF

XC018 IMD35 0.18 um CMOS CMOS Process Family varactor diode parameter "X-Fab" 0.18 um CMOS Process rpp1k1 ne3 MOS3ST BEol 0.18-um inductance varactor ghz

CMOS

Abstract: MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model
Text: 0.18 µm CMOS Process XC018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular RF enabled CMOS Logic and Analog Technology 0.18-micron drawn gate length N-well process, modules are also available for metal-insulatormetal capacitors, high resistive poly, dual gate

Original

PDF

XC018 18-micron XC018 CMOS MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model