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    NE25339T1U78 Price and Stock

    NEC Electronics Group NE25339-T1-U78

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    NE25339T1U78 Datasheets Context Search

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    NE25339U77

    Abstract: U-79 ne25339u76 NE25339 NE25339-T1 NE25339U78 NE25339U79 11dBtyp
    Text: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE VGS = 1 V, IDS = 10 mA, f = 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 800 µm • ION IMPLANTATION • AVAILABLE IN TAPE & REEL OR BULK Power Gain, GPS dB


    Original     		PDF NE25339 NE253 NE25339T1U78 NE25339U79 NE25339T1U79 24-Hour NE25339U77 U-79 ne25339u76 NE25339 NE25339-T1 NE25339U78 NE25339U79 11dBtyp

    U78 IC

    Abstract: mesfet fet
    Text: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE V g s = 1 V, I ds = 10 mA, f = 900 MHz S U IT A B L E F O R U S E A S R F A M P L IF IE R A N D M IX E R IN U H F A P P L IC A T IO N S L O W C R S S : 0.02 pF TYP


    OCR Scan     		PDF NE25339 NE253 OT-143) NE25339 NE25339-T1 NE25339U76 NE25339T1U76 NE25339U77 NE25339T1U77 U78 IC mesfet fet

    Untitled

    Abstract: No abstract text available
    Text: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POW ER GAIN AND NOISE F IG U R E v s. DRAIN TO S O U R C E V O LTA G E V g s = 1 V , Id s = 10 mA, f = 900 MHz SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS LOW CRSS: 0.02 pF TYP HIGH GPS: 20 dB (TYP) AT 900 MHz


    OCR Scan     		PDF NE25339 NE253 1000pF OT-143) NE25339 NE25339-T1 NE25339U76 NE25339T1U76 NE25339U77

    NE25339-U77

    Abstract: NE25339U77 NE25339 dual-gate NE25339U76
    Text: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE Vgs = 1 V, Ids = 10 mA, f = 900 MHz SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS LOW CRSS: 0.02 pF TYP HIGH GPS: 20 dB (TYP) AT 900 MHz


    OCR Scan     		PDF NE25339 NE253 bM27525 00L5442 OT-143) NE25339 NE25339-T1 NE25339U76 NE25339T1U76 NE25339-U77 NE25339U77 dual-gate

    u-79

    Abstract: NE25339
    Text: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES • • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS LOW CRSS: 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • Lgi = 1.0 Jim, Lg2 = 1.5 Jim, Wg = 800 Jim


    OCR Scan     		PDF NE25339 NE253 MESF39U79 NE25339T1U79 24-Hour u-79 NE25339