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    NDS9400A Price and Stock

    onsemi NDS9400A

    MOSFET P-CH 30V 3.4A 8SOIC
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    DigiKey NDS9400A Reel
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    F NDS9400A

    3400 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
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    Quest Components NDS9400A 238
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    Fairchild Semiconductor Corporation NDS9400A

    3400 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
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    Quest Components NDS9400A 80
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    NDS9400A 60
    • 1 $0.96
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    Fairchild Semiconductor Corporation NDS9400ACT

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    Quest Components NDS9400ACT 60
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    NDS9400A Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NDS9400A Fairchild Semiconductor Single P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9400A Fairchild Semiconductor Single P-Channel Enhancement Mode Field Effect Tra Original PDF
    NDS9400A Fairchild Semiconductor Single P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9400A National Semiconductor Single P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9400A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS9400A National Semiconductor Single P-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDS9400A_NL Fairchild Semiconductor Single P-Channel Enhancement Mode Field Effect Transistor Original PDF

    NDS9400A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NDS9400A

    Abstract: No abstract text available
    Text: February 1996 NDS9400A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS9400A NDS9400A

    Untitled

    Abstract: No abstract text available
    Text: February 1996 NDS9400A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS9400A

    NDS9400A

    Abstract: No abstract text available
    Text: N February 1996 NDS9400A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS9400A NDS9400A

    NDS9400A

    Abstract: No abstract text available
    Text: February 1996 NDS9400A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS9400A -10lopment. NDS9400A

    F011

    Abstract: F63TNR F852 L86Z NDS9400A
    Text: February 1996 NDS9400A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS9400A -10lopment. F011 F63TNR F852 L86Z NDS9400A

    74HCT244B1

    Abstract: epson 320X240 MC68K Sharp HR TFT PNP power transistors by hitachi p948 MC68EZ328 VR4181A user manual
    Text: S1D13706 Embedded Memory LCD Controller S1D13706 TECHNICAL MANUAL Document Number: X31B-Q-001-06 Copyright 2001 Epson Research and Development, Inc. All Rights Reserved. Information in this document is subject to change without notice.You may download and use this document, but only for your own use in


    Original     		PDF S1D13706 X31B-Q-001-06 res2827-4346 X31B-G-018-02 104-pin 74HCT244B1 epson 320X240 MC68K Sharp HR TFT PNP power transistors by hitachi p948 MC68EZ328 VR4181A user manual

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original     		PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    20X2 LCD DISPLAY PINOUT

    Abstract: manual TV thomson 29 DF 170 CRT TV BLOCK DIAGRAM schematic diagram crt tv sharp lcd tv inverter board schematic toshiba lcd power board schematic LCD display 20X2 3v pin diagram of 8X2 LCD DISPLAY 8X2 LCD DISPLAY LD7552BPS
    Text: S1D13506 Color LCD/CRT/TV Controller S1D13506 TECHNICAL MANUAL Document Number: X25B-Q-001-06 Copyright 2001 Epson Research and Development, Inc. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in


    Original     		PDF S1D13506 S1D13506 X25B-Q-001-06 their2712-9164 SA-1110 X25B-G-013-03 20X2 LCD DISPLAY PINOUT manual TV thomson 29 DF 170 CRT TV BLOCK DIAGRAM schematic diagram crt tv sharp lcd tv inverter board schematic toshiba lcd power board schematic LCD display 20X2 3v pin diagram of 8X2 LCD DISPLAY 8X2 LCD DISPLAY LD7552BPS

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    2310 dhi

    Abstract: epson t11 toshiba LCD 320X240 toshiba lcd inverter pinout transistor p945 micro transistor T5c transistor NEC D 882 p 37 PIN TFT MOBILE DISPLAY 8K 7W14F schematic diagram crt tv sharp
    Text: S1D13706 Embedded Memory LCD Controller S1D13706 TECHNICAL MANUAL Document Number: X31B-Q-001-06 Copyright 2001 Epson Research and Development, Inc. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in


    Original     		PDF S1D13706 S1D13706 X31B-Q-001-06 SA-1110 X31B-G-019-02 2310 dhi epson t11 toshiba LCD 320X240 toshiba lcd inverter pinout transistor p945 micro transistor T5c transistor NEC D 882 p 37 PIN TFT MOBILE DISPLAY 8K 7W14F schematic diagram crt tv sharp

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    b24 b03 so-8

    Abstract: S1D13806F00A 20X2 LCD DISPLAY PINOUT schematic diagram crt tv sharp S1D13806F vmp1 fet philips lcd tv inverter schematic hitachi 053h lcd tv inverter schematic VMP4
    Text: S1D13806 Embedded Memory Display Controller S1D13806 TECHNICAL MANUAL Document Number: X28B-Q-001-05 Copyright 2001 Epson Research and Development, Inc. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in


    Original     		PDF S1D13806 S1D13806 X28B-Q-001-05 X28B-G-014-01 b24 b03 so-8 S1D13806F00A 20X2 LCD DISPLAY PINOUT schematic diagram crt tv sharp S1D13806F vmp1 fet philips lcd tv inverter schematic hitachi 053h lcd tv inverter schematic VMP4

    FDS4953

    Abstract: FDS6574A FDS4935 fds4488 fds6875 FDS3670 FDS6676 FDS6690S fds6912 FDS6975
    Text: Discrete MOSFET SO-8 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SO-8 N-Channel FDS6898A 20 Dual - 0.014 0.018 - 16 9.4 2 FDS6898AZ 20 Dual - 0.014 0.018 - 16 9.4 2 FDS6894A


    Original     		PDF FDS6898A FDS6898AZ FDS6894A FDS6894AZ FDS6890A FDS6892A FDS6892AZ FDS6812A FDS4465 FDS6575 FDS4953 FDS6574A FDS4935 fds4488 fds6875 FDS3670 FDS6676 FDS6690S fds6912 FDS6975

    Untitled

    Abstract: No abstract text available
    Text: P A I R C H February 1996 I I - D iMICDNDUCTQR TM NDS9400A Single P-Channel Enhancement Mode Field Effect Transistor Features General Description These P -C h a n n e l enhancem ent m ode pow er field effect • -3 .4 A , -3 0 V . R DS 0N = 0 .1 3 Q @ V GS= -1 0 V .


    OCR Scan     		PDF NDS9400A S9400A

    Untitled

    Abstract: No abstract text available
    Text: National S e mi c o n d u c t o r ~ May 1996 NDS9400A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDS9400A

    Untitled

    Abstract: No abstract text available
    Text: February 1996 N NDS9400A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		PDF NDS9400A NDS9400A 193tQ

    NDS9400A

    Abstract: No abstract text available
    Text: F e b ru a ry 1 9 9 6 N NDS9400A Single P-Channel Enhancement Mode Field Effect Transistor Features General Description These P -C h a n n e l enhancem ent m ode pow er field effect • -3 .4 A , -3 0 V . R ds on = 0 .1 3£2 @ V s s = -1 0 V . ■ High density cell design for e xtre m ely low R DS(0N).


    OCR Scan     		PDF NDS9400A NDS9400A 0D33347

    NDS9400A

    Abstract: No abstract text available
    Text: Nat i ona I May 1996 Semiconductor" NDS9400A Single P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDS9400A bS0113D NDS9400A

    601lt

    Abstract: Complementary MOSFET Half Bridge NDS351AN MDs9933 NDS331N NDS356 NDS9936 NDS9952A FDV302P
    Text: Discrete Power and Signal Technologies Fairchild Sem iconductor Selection Guides Surface Mount Power MOSFETs Part Num ber v 3S IV _ J « L 'd A) _ " P i ' I I ' (W ) ¡Remarks P art V0S Num ber (V) iV t M » W w t u iv * » 45V Id (A) 2IV i Po j (W ) I Remarks |


    OCR Scan     		PDF S8426A* NQS8426t NDS8425 NDS8926 NDS9925A NDS8410A NDS8410Î NDS9410A NOS8936 NDS9936 601lt Complementary MOSFET Half Bridge NDS351AN MDs9933 NDS331N NDS356 NDS9952A FDV302P