NDH854P
Abstract: No abstract text available
Text: N October 1996 PRELIMINARY NDH854P P-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is
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NDH854P
NDH854P
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NDH854P
Abstract: No abstract text available
Text: May 1997 NDH854P P-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
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NDH854P
NDH854P
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mosfet cross reference
Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P
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2N7000
IRF7203
FDS9435A
2N7002
OT-23,
IRF7204
NDS8434A
BS170
mosfet cross reference
SMP40N06
SMP75N06-08
SI9952DY
SMP60N03-10L
IRFZ44 TO-263
Si9948DY
irf1010e equivalent
IRLL014N
NDT3055L
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5KE100A
5KE100CA
5KE10A
5KE10CA
5KE110A
5KE110CA
5KE11A
5KE11CA
5KE120A
5KE120CA
SSP35n03
bc417
ksh200 equivalent
2N5457 equivalent
ss8050 equivalent
1N34 equivalent
FQP50N06 equivalent
bd139 equivalent
2N5458 equivalent
2N3563 equivalent
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
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d6081
Abstract: No abstract text available
Text: FAIRCHILD MlC O N D U C TO R May 1997 tm NDH854P P-Channel Enhancement Mode Field Effect Transistor Features General Description S u p e rS 0 T -8 P -C hannel en hance m en t m ode pow er field -5.1 A, -30 V. effect transistors are produced using Fairchild's proprietary,
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NDH854P
d6081
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Untitled
Abstract: No abstract text available
Text: F A IR C H IL D SEM IC ONDUCTO R May 1997 tm NDH854P P-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOT -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
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NDH854P
NDH854P
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NDH854P
Abstract: No abstract text available
Text: FAIRCHILD M ay 1997 iM IC G N D U C T O R 1 NDH854P P-Channel Enhancement Mode Field Effect Transistor Features G eneral Description SuperSOT -8 P-Channel enhancement mode power field • -5.1 A, -30 V. RD! effect transistors are produced using Fairchild's proprietary,
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NDH854P
NDH854P
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NDT453N
Abstract: H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N
Text: Discrete Power and Signal Technologies Fairchild S e m ic o n d u c to r Selection G uides Surface Mount Power MOSFETs Part Num ber v„s VI Max (ß ^DSfoN} 4.5V 10V In (A) 2.7V PD (W | Part Num ber Remarks | M ax ( fi) V « v „s IV) 10V 4.5V P, |W |
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T-223
NDC631N
FDC6303N"
FDC6301N*
NDC651N
NDC7002N
NDT455N
NDT453N
NDT451AN
NDT451N
H834P
FDC6321C
NDC652P
6322L
NDH8501N
FDC6303N
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