SVI 2004 A
Abstract: SVI 2004 TPC8028 tpc8026 toshiba f5d tpc8117 IC SEM 2004 tpc8118 toshiba smd marking SVI 2004 C
Text: Medium Power MOSFETs Low Voltage＆ LowResistance series February, 2007 Copyright 2007, Toshiba Corporation. Low Resistance Trend 30 2 Ron*A (mOhm*mm ) 25 20 15 10 Pch Nch 5 Pch IV Nch III Pch V Nch IV Pch VI Nch V or VI February, 2007 2 Trend Map on Power MOSFET for LiB PCM
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HS8K1
Abstract: No abstract text available
Text: HS8K11 30V Nch+Nch Power MOSFET Datasheet l Outline Symbol VDSS RDS on (Max.) ID PD Tr1:Nch Tr2:Nch 30V HSML3030L10 30V 17.9mΩ 13.3mΩ ±7A ±11A 2W l Features 1) Low on - resistance.
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HS8K11
HSML3030L10
3000Fig
HS8K1
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Untitled
Abstract: No abstract text available
Text: US6K4 Transistors 1.8V Drive Nch+Nch MOSFET US6K4 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 1.8V drive. Abbreviated symbol : K04
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Abstract: No abstract text available
Text: US6K4 Transistors 1.8V Drive Nch+Nch MOSFET US6K4 Structure Silicon N-channel MOSFET Dimensions Unit : mm 0.2Max. TUMT6 Features 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 1.8V drive. Abbreviated symbol : K04
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Untitled
Abstract: No abstract text available
Text: US6K2 Transistors 4V Drive Nch+Nch MOSFET US6K2 Structure Silicon N-channel MOSFET Dimensions Unit : mm TUMT6 0.2Max. Features 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 4V drive. Abbreviated symbol : K02
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US6K
Abstract: US6K4
Text: US6K4 Transistors 1.8V Drive Nch+Nch MOSFET US6K4 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 1.8V drive. Abbreviated symbol : K04
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Untitled
Abstract: No abstract text available
Text: US6K2 Transistors 4V Drive Nch+Nch MOSFET US6K2 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 4V drive. Abbreviated symbol : K02
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transistor 7B1284
Abstract: Z diode
Text: US6K2 Transistors 4V Drive Nch+Nch MOSFET US6K2 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 4V drive. Abbreviated symbol : K02
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TKM2502Y
Abstract: FET n-ch 1 ohm
Text: Drain common dual Nch power MOS FET / TKM2502Y Page 1 of 2 New Drain common dual Nch power MOS FET TKM2502Y Description The TKM2502Y is a drain-common dual Nch power MOS-FET. Excellent resistor characteristics make it ideal for power management in 2-channel battery protection
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TKM2502Y
TKM2502Y
HSON3030-8)
SON3030-8
10ohm
jp/products/new/mos-fet/tkm2502y
FET n-ch 1 ohm
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tpc8118
Abstract: SVI 2004 A toshiba f5d tpc8026 tpc8109 oks2c toshiba f5b TPC8028 MARKING TPC8107 SOP8 MOSFET MARKING STP
Text: Power MOSFETs 低耐圧低Ronシリーズ 2007年 2月 Copyright 2007, Toshiba Corporation. 低Ron 低耐圧U-MOSの技術トレンド 30 2 Ron*A (mOhm*mm ) 25 20 15 10 Pch Nch 5 Pch IV Nch III Pch V Nch IV Pch VI Nch V or VI 2007年 2月 2 リチウムイオン電池保護回路用MOSFETトレンドマップ
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TPCM8001-H
TPCM8003-H
TPCM8002-H
2Q/2007
TPCM8102
1Q/2007
tpc8118
SVI 2004 A
toshiba f5d
tpc8026
tpc8109
oks2c
toshiba f5b
TPC8028
MARKING TPC8107 SOP8
MOSFET MARKING STP
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Untitled
Abstract: No abstract text available
Text: SP8K31FRA SP8K31 Transistor 4V Drive Nch+Nch MOSFET AEC-Q101 Qualified SP8K31 SP8K31FRA zDimensions Unit : mm zStructure Silicon N-channel MOSFET SOP8 zFeatures 1) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8). zApplications Switching
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SP8K31FRA
SP8K31
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: ES6U41 2.5V Drive Nch+SBD MOSFET ES6U41 Dimensions Unit : mm Structure Silicon N-channel MOSFET / Schottky barrier diode WEMT6 Features 1) Nch MOSFET and schottky barrier diodeare put in WEMT6 package. 2) High-speed switching, Low On-resistance.
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ES6U41
R1120A
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SH8K4
Abstract: SH8K
Text: 4V Drive Nch+Nch MOSFET SH8K4 Dimensions Unit : mm Structure Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small surface Mount Package (SOP8). Application Power switching, DC / DC converter.
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R0039A
SH8K4
SH8K
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Untitled
Abstract: No abstract text available
Text: 1.2V Drive Nch + Nch MOSFET EM6K33 Structure ilicon N-channel MOSFET Dimensions Unit : mm Features 1) High speed switing. 2) Small package(EMT6). 3) Ultra low voltage drive(1.2V drive). Application Switching Abbreviated symbol : K33
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EM6K33
R1010A
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Untitled
Abstract: No abstract text available
Text: 4V Drive Nch+Nch MOSFET SH8K32 Structure Silicon N-channel MOSFET Dimensions Unit : mm SOP8 Features 1) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8). Application Switching Each lead has same dimensions Packaging specifications
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SH8K32
R0039A
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mosfet with schottky body diode
Abstract: MOSFET dynamic parameters
Text: US5U1 Transistors 2.5V Drive Nch+SBD MOSFET US5U1 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance.
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SP8K4
Abstract: SP8K4 TB
Text: SP8K4 Transistors 4V Drive Nch+Nch MOSFET SP8K4 zStructure Silicon N-channel MOSFET zDimensions Unit : mm SOP8 5.0 1.75 0.4 zApplication Power switching, DC / DC converter. (1) (4) Each lead has same dimensions zEquivalent circuit (8) Taping (7) (6) (5)
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20V P-Channel Power MOSFET
Abstract: US6M2
Text: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.
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US5U2
Abstract: No abstract text available
Text: US5U2 Transistors 4V Drive Nch+SBD MOSFET US5U2 Structure Silicon N-channel MOSFET / Schottky barrier diode Dimensions Unit : mm TUMT5 2.0 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance.
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Untitled
Abstract: No abstract text available
Text: US6U37 Transistors 2.5V Drive Nch+SBD MOSFET US6U37 Structure Silicon N-channel MOSFET / Schottky barrier diode Dimensions Unit : mm 0.2Max. TUMT6 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT6 package. 2) High-speed switching, Low On-resistance.
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US6U37
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SP8K22
Abstract: voltage source inverter
Text: SP8K22 Transistor 4V Drive Nch+Nch MOSFET SP8K22 zStructure Silicon N-channel MOSFET zDimensions Unit : mm SOP8 5.0 1.75 0.4 (8) (5) (1) (4) zApplications Power switching , DC / DC converter , Inverter Each lead has same dimensions zPackaging dimensions
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SP8K22
SP8K22
voltage source inverter
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sh8k1
Abstract: No abstract text available
Text: 4V Drive Nch+Nch MOSFET SH8K1 Dimensions Unit : mm Structure Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small surface Mount Package (SOP8). Application Power switching, DC / DC converter.
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R0039A
sh8k1
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Untitled
Abstract: No abstract text available
Text: EM6K6 Transistor 1.8V Drive Nch+Nch MOSFET EM6K6 zStructure Silicon N-channel MOSFET zDimensions Unit : mm EMT6 zApplications Switching zFeatures 1) The MOSFET elements are independent, eliminating mutual interference. 2) Mounting cost and area can be cut in half.
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nch power mosfet
Abstract: ALL POWER MOSFET BD2270HFV soft charge circuit Nch Nch MOSFET "MOSFET Driver" all mosfet equivalent book fet data book free download HVSOF5 mosfet low-voltage
Text: 㪥㪼㫎㩷㪧㫉㫆㪻㫌㪺㫋㩷㪙㫌㫃㫃㪼㫋㫀㫅 No.E7042 Nch MOSFET Driver IC for Load Switching New L o a d Switch Driver IC Powe Vcc=2 Nch MOSFET Driver r Vcc .7 to 5 .5V Nch L oad S witch Disc BD2270HFV Vcc=2.7 to 5.5V OSC CPU Soft Start Function
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E7042
BD2270HFV
BD2270HFV
nch power mosfet
ALL POWER MOSFET
soft charge circuit
Nch Nch MOSFET
"MOSFET Driver"
all mosfet equivalent book
fet data book free download
HVSOF5
mosfet low-voltage
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