Contextual Info: DA SH NO NU MI IN N MB DU AL ER CT * AN CE IN µ D H MI UCT NI A MU NC M E (µ H) IN DU MA CT XI AN MU C M E (µ H) TE ST FR EQ UE Q NC MI NI Y (M MU Hz M Q ) @ MI L NI MI MU N. M SR @ F L MI MA NI X. MU M DC (M Hz MA RES ) XI IST MU A N CU M CE (O R HM

Contextual Info: DA SH NO NU MI IN N MB DU AL ER CT * AN CE IN µ D H MI UCT NI A MU NC M E (µ H) IN DU MA CT XI AN MU C M E (µ H) TE ST FR EQ UE Q NC MI NI Y MU (M Hz M Q ) @ MI L NI MI MU N. M SR @ F L MI MA NI X. MU M DC (M Hz MA RES ) XI IST MU A N CU M CE (O R HM

Contextual Info: DA SH N NO UMB ER MI IN N * DU AL CT AN CE IN DU µ H MI CT NI A MU NC M E (µ H) IN DU MA CT XI AN MU C M E (µ H) TE ST FR EQ UE Q NC MI NI Y (M Q MUM Hz MI ) NI @ MU L M SR M I @ N. F MI L MA NI MU X. DC M (M R MA ES Hz ) XI IST MU A N CU M C ( E R MA RE OHM

Contextual Info: DA SH N NO UMB ER MI IN N * DU AL CT AN CE IN DU µ H MI CT NI A MU NC M E (µ H) IN DU MA CT XI AN MU C M E (µ H) TE ST FR EQ UE Q NC MI NI Y (M Q MUM Hz MI ) NI @ MU L M SR M I @ N. F MI L MA NI MU X. DC M (M R MA ES Hz ) XI IST MU A N CU M C ( E R MA RE OHM

DG9414

Abstract: DG9415
Contextual Info: DG9414/9415 Vishay Siliconix Single 4 x 1 and Dual 2 x 1 Multiplexers FEATURES BENEFITS APPLICATIONS D D D D D D D High Accuracy D Simple Logic Interface D Reduce Board Space D D D D D D Low Voltage Operation +2.7 to +12 V Low On-Resistance - rDS(on): 14 W

2142-0

Abstract: DG9414 DG9415
Contextual Info: DG9414/9415 Vishay Siliconix Single 4 x 1 and Dual 2 x 1 Multiplexers FEATURES BENEFITS APPLICATIONS D D D D D D D High Accuracy D Simple Logic Interface D Reduce Board Space D D D D D D Low Voltage Operation +2.7 to +12 V Low On-Resistance - rDS(on): 14 W

DG9414

Abstract: DG9415 cnc schematic DG9414DQ DG9415DQ MSOP-10
Contextual Info: DG9414/9415 Vishay Siliconix Single 4 x 1 and Dual 2 x 1 Multiplexers FEATURES BENEFITS APPLICATIONS D D D D D D D High Accuracy D Simple Logic Interface D Reduce Board Space D D D D D D Low Voltage Operation +2.7 to +12 V Low On-Resistance - rDS(on): 14 W

DG9414

Abstract: DG9415
Contextual Info: DG9414/9415 Vishay Siliconix Single 4 x 1 and Dual 2 x 1 Multiplexers FEATURES BENEFITS APPLICATIONS D D D D D D D High Accuracy D Simple Logic Interface D Reduce Board Space D D D D D D Low Voltage Operation +2.7 to +12 V Low On-Resistance - rDS(on): 14 W

cnc schematic

Abstract: DG9414 DG9415 50WIN DG9414DQ DG9415DQ MSOP-10
Contextual Info: DG9414/9415 Vishay Siliconix Single 4 x 1 and Dual 2 x 1 Multiplexers FEATURES BENEFITS APPLICATIONS D D D D D D D High Accuracy D Simple Logic Interface D Reduce Board Space D D D D D D Low Voltage Operation +2.7 to +12 V Low On-Resistance - rDS(on): 14 W

cnc schematic

Abstract: DG9414 DG9414DQ-T1-E3 DG9415 DG9414DQ DG9415DQ MSOP-10
Contextual Info: DG9414/9415 Vishay Siliconix Single 4 x 1 and Dual 2 x 1 Multiplexers DESCRIPTION FEATURES The DG9414, a single 4 to 1 multiplexer, and the DG9415, a dual 2 x 1 multiplexer, are monolithic CMOS analog devices designed for high performance low voltage operation.

DG9414

Abstract: DG9415 cnc schematic DG9414DQ DG9415DQ MSOP-10 DG9415DV
Contextual Info: DG9414/9415 New Product Vishay Siliconix Single 4 x 1 and Dual 2 x 1 Multiplexers FEATURES BENEFITS APPLICATIONS D D D D D D D High Accuracy D Simple Logic Interface D Reduce Board Space D D D D D D Low Voltage Operation +2.7 to +12 V Low On-Resistance - rDS(on): 14 W

DG9414

Abstract: DG9415 cnc schematic DG9414DQ DG9414DQ-T1-E3 DG9415DQ MSOP-10 71009
Contextual Info: DG9414/9415 Vishay Siliconix Single 4 x 1 and Dual 2 x 1 Multiplexers DESCRIPTION FEATURES The DG9414, a single 4 to 1 multiplexer, and the DG9415, a dual 2 x 1 multiplexer, are monolithic CMOS analog devices designed for high performance low voltage operation.

IRG4BC15MD

Abstract: DSA0031036
Contextual Info: PD- 94151A IRG4BC15MD Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Rugged: 10µsec short circuit capable at VGS = 15V • Low VCE on for 4 to 10kHz applications • IGBT co-packaged with ultra-soft-recovery anti-parallel

IRG4BC15MD

Abstract: 94151A
Contextual Info: PD- 94151A IRG4BC15MD Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Rugged: 10µsec short circuit capable at VGS = 15V • Low VCE on for 4 to 10kHz applications • IGBT co-packaged with ultra-soft-recovery anti-parallel

smd diode 106c

Abstract: 106C smd
Contextual Info: PD-94150C HFB25HJ20 Ultrafast, Soft Recovery Diode FRED Features • • • • • • VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount IF AV = 25A trr = 35ns ESD Rating: Class NS per MIL-STD-750, Method 1020

Contextual Info: PD-94150B HFB25HJ20 Ultrafast, Soft Recovery Diode FRED Features • • • • • VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount IF AV = 25A trr = 35ns Description These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power

Contextual Info: PD-94150A HFB25HJ20 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount IF AV = 25A trr = 35ns Description TM HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An

Contextual Info: PD-94150 HFB25HJ20 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount IF AV = 25A trr = 35ns Description TM HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An

EIA-541

Abstract: IRF7702 IRF7756 60v 10KHz ir MOSFET
Contextual Info: PD -94159 IRF7756 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -12V 0.040@VGS = -4.5V 0.058@VGS = -2.5V ±4.3A 0.087@VGS = -1.8V ±2.2A

HEXFET SO-8

Abstract: MOSFET TSSOP-8 TSSOP-8 footprint EIA-541 IRF7702 IRF7756
Contextual Info: PD -94159A IRF7756 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -12V 0.040@VGS = -4.5V 0.058@VGS = -2.5V 0.087@VGS = -1.8V ±4.3A ±3.4A

Contextual Info: PD - 94155 HEXFET POWER MOSFET THRU-HOLE TO-254AA IRF5M4905 55V, P-CHANNEL Product Summary Part Number BVDSS IRF5M4905 -55V RDS(on) 0.03Ω ID -35A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

IRF (10A) 55V

Abstract: IRF5M4905
Contextual Info: PD - 94155 HEXFET POWER MOSFET THRU-HOLE TO-254AA IRF5M4905 55V, P-CHANNEL Product Summary Part Number BVDSS IRF5M4905 -55V RDS(on) 0.03Ω ID -35A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

IRFZ24V

Contextual Info: PD - 94156 IRFZ24V HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V l RDS on = 60mΩ

IRFZ24V

Contextual Info: PD - 94156 IRFZ24V HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V l RDS on = 60mΩ