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    NB021E Search Results

    NB021E Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NB021E Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    NB021E Unknown Shortform Transistor Datasheet Guide Short Form PDF
    NB021E Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    NB021EINB212YI Unknown Cross Reference Datasheet Scan PDF
    NB021EJNB212YJ Unknown Cross Reference Datasheet Scan PDF
    NB021EKNB212YX Unknown Cross Reference Datasheet Scan PDF
    NB021ELNB212YY Unknown Cross Reference Datasheet Scan PDF
    NB021ENB212YH Unknown Cross Reference Datasheet Scan PDF
    NB021ETNB212Z Unknown Cross Reference Datasheet Scan PDF
    NB021EUNB212ZG Unknown Cross Reference Datasheet Scan PDF
    NB021EVNB212ZH Unknown Cross Reference Datasheet Scan PDF
    NB021EYNB212ZI Unknown Cross Reference Datasheet Scan PDF
    NB021EZNB212ZJ Unknown Cross Reference Datasheet Scan PDF

    NB021E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA987

    Abstract: 2N1026A LOW-POWER SILICON PNP
    Text: LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 NB321F NB321X NB321Y 2N2105 2N2105 2N2105 2N1026A 2N1469 2N940 V410A 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 NB221EH NB221FH NB221XH NB221YH NB021ET NB021FT NB023ET NB023FT 2SA987 NB021FI


    Original     		PDF NB321F NB321X NB321Y 2N2105 2N1026A 2N1469 2N940 V410A 2SA987 LOW-POWER SILICON PNP

    BC137

    Abstract: LM3661TL-1.40 G2025 LOW-POWER SILICON PNP ST8500 BC137 800 BCY90 NB021 BCY91 2N85
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 NB023FL NB023FZ 2N4285 2SA987F NB021EV NB021FV NB023EV NB023FV 2SA987E 2SA880 ~~~j~~ 15 20 25 30 35 40 2SA721 2N1223 2S3010 2S3010 2N4937 2N4938 2N4939 2N4940 2N4941 2N4942 2N935 2S3210 2N5110 TIPP32 2S3020


    Original     		PDF NB023FL NB023FZ 2N4285 2SA987F NB021EV NB021FV NB023EV NB023FV 2SA987E 2SA880 BC137 LM3661TL-1.40 G2025 LOW-POWER SILICON PNP ST8500 BC137 800 BCY90 NB021 BCY91 2N85

    NA51W

    Abstract: NA52W NB313Y NA52W pnp 35604 NB311 NB312 NB313 NB321 NB322
    Text: NB311,312,313 NPN , NB321,3 2 2 ,323(PNP) NATL SEUICOND {DISCRETE} 6501130 NATL ifl EMICOND, (DISCRETE) 28C National Semiconductor r - 35601 n - 2 , } 3 ^ 0 - 7 NB311, 312, 313 (NPN) * , NB321, 3 2 2,3 N P ) 1,5ArnP com plem entary pow er drivers 2 ,3 23(P


    OCR Scan     		PDF bSD113D NB311, NB321, andTO-202 b5D113D NB313Y" NB022EY NR001E NB113EY NA51W NA52W NB313Y NA52W pnp 35604 NB311 NB312 NB313 NB321 NB322

    NB111

    Abstract: NB121 NB211E LB 122 NPN U6501 NB212E
    Text: NATL SEMICOND {DISCRETE} 2fl 650 1130 NATL SEMICOND, Q. z cl CO CM j>i|b S D113 □ QOaSSTa DISCRETE 28C National Semiconductor T - z 35 5 9 3 ? - Z - / T- *• * CM CM CM rCÛ z r* Z CL z NB121,122,123(PNP) 100mA 9eneral purpose transistors (TI package and lead coding


    OCR Scan     		PDF bS0113G NB121 100mA 400mV to-92 fcj501130 NB021EV NB211YY NR001E NB111 NB211E LB 122 NPN U6501 NB212E

    40khz ultrasonic transmitter

    Abstract: 40KHZ ULTRASONIC NA01 nb111eh NR001E NB021EY toko k
    Text: Sö NATL SEHICOND {DISCRETE} NA01 NPN , NA02(PNP) 6 5 0 1 1 3 0 NA TL S E M I C O N D , DE I t.SD113G DG3SSS3 (D I S C R E T E ) _28C 35553 D National Semiconductor NA02(PNP) 80 mA complementary power transistors [~1~| package and lead coding features • 20 Volt/800 mA Amp rating


    OCR Scan     		PDF SD113G Volt/800 NB111EH/J NA01EG/J NR001E 380mW NR001E 40khz ultrasonic transmitter 40KHZ ULTRASONIC NA01 nb111eh NB021EY toko k

    40khz ultrasonic transmitter

    Abstract: 40KHZ ULTRASONIC NB111 NB111EH "Ultrasonic" "transmitter" 40khz ultrasonic transmitter 12V k 3555 NA01EX NR001E NB021EY
    Text: 20 NATL SEHICOND {DISCRETE} 6501130 NATL SEMICOND, STr z a z a DISCRETE _28C 35553 NA02(PNP) 80 mA complementary power transistors [T~| package and lead coding features • 20 Volt/800 mA Amp rating ■ Low V qe (sat) and V qe (sat) characteristics at §


    OCR Scan     		PDF SD113G 800mA Volt/800 NB111EH/J NA01EG/J NR001E NA01EG/J 380mW 40khz ultrasonic transmitter 40KHZ ULTRASONIC NB111 NB111EH "Ultrasonic" "transmitter" 40khz ultrasonic transmitter 12V k 3555 NA01EX NB021EY

    NA51 transistor

    Abstract: na52 transistor BV 726 C 1 Converter NA52W pnp NA52W BV 726 C Converter na51 npn BV 726 C na52 power transistor na51
    Text: NATL SEMICOND {DISCRETE} 6501130 NATL CL Z CL CÎ ~2ö SEMICOND, DE I tS0113Q 0035573 T 28C DISCRETE CT1 National ÉSA Semiconductor 35573 - f - 3 in < z r\ Z Q. 10 < NA51 (NPN) 3.5Am p complementary pow er transistors NA52(PNP) features PH packages and lead coding


    OCR Scan     		PDF tS0113Q O-126 O-220 T0-220 35S7b NB021EY NB122EY NB112EY NB312E NA51 transistor na52 transistor BV 726 C 1 Converter NA52W pnp NA52W BV 726 C Converter na51 npn BV 726 C na52 power transistor na51

    NA42 transistor

    Abstract: NA42U NA41 16AL 35570 NA42 pnp 557
    Text: äfl NA41 NPN , NA42(PNP) SENICOND {DISCRETE} D E ^ b S D 1 1 3 D Doassti N A T L S E M I C O N D , (D I S C R E T E ) 3 28C National Semiconductor NA41(NPN) NA42(PNP) 2 .5 Amp com plem entary p o w e r tra n s is to rs fl~| packages and lead coding features


    OCR Scan     		PDF O-126 O-220 O-220 tS0113D T-32-P NB021EY NB211YY NR001E NA41U NA42 transistor NA42U NA41 16AL 35570 NA42 pnp 557

    NB111

    Abstract: npn general purpose amplifier E28C nb121
    Text: ~ 2ä NATL SEHICOND {DISCRETE} 650 1130 a. Z a CO CM NATL S E M IC O N D , D E |b s a ii3 Q a a B ssT a 28C 35593 D IS C R E T E National Semiconductor T- r> CM CM NB121,122,123(PNP) 100mA general purpose transistors CM features rCÛ z V» z CL z (TI package and lead coding


    OCR Scan     		PDF NB121 100mA 400mV tS0113Q NB021EY NB211YY NR001E NA41U NA42U NB111 npn general purpose amplifier E28C

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    NA51 transistor

    Abstract: NA51W power transistor na51 na52 transistor NA52W NA52W pnp na51 NA52U na52 na51 npn
    Text: NATL SEMICOND {DISCRETE} 6501130 CL Z CL NATL ~2ö SEMICOND, DE I tS0113Q 0035573 T 28C DISCRETE CT1 National ÉSA Semiconductor 35573 - f - 3 C Î in < z r\ Z Q. 10 < NA51 (NPN) NA52(PNP) 3 .5 A m p com plem entary p o w e r tra n s is to rs features [T I packages and lead coding


    OCR Scan     		PDF tSD113D O-126 T0-220 O-126 Q03SS7b 10iiF 33-If NB021EY NB122EY NR001E NA51 transistor NA51W power transistor na51 na52 transistor NA52W NA52W pnp na51 NA52U na52 na51 npn

    transistor pnp a111

    Abstract: NA41U TO-126 ON 150 watt hf transistor 12 volt PJO 390 CM NA42 NA42U NB021EY NB211YY NR001E
    Text: NA41 NPN , NA42(PNP) Na j U^STMICOND {DISCRETE} ^ 5JIL13JL N A T L äfl SEMI C O N D (DISCRETE) National Semiconductor NA41(NPN) NA42(PNP) Dlf| bSD1130 DOaSSbT 7 28C 2 .5 Amp com plem entary p o w e r tra n s is to rs fl~| packages and lead coding features


    OCR Scan     		PDF bSD113D O-126 O-220 O-126 O-220 hSD113D NB021EY NB211YY NR001E NA41U transistor pnp a111 NA41U TO-126 ON 150 watt hf transistor 12 volt PJO 390 CM NA42 NA42U NB021EY NB211YY NR001E