spare assignment standard
Abstract: bad block nand flash spare area assignment
Text: NAND Flash Spare Area Assignment Standard 27. April. 2005 Memory Division Samsung Electronics Co., Ltd Product Product Planning Planning & & Application Application Eng. Eng. Team Team The The Leader Leader in in Memory Memory Technology Technology SPARE AREA ASSIGNMENT STANDARD
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FPT-44P-M08
Abstract: MBM30LV0064
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-3E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to
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DS05-20878-3E
MBM30LV0064
MBM30LV0064
FPT-44P-M08
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526h
Abstract: FPT-44P-M08 MBM30LV0032
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20884-3E FLASH MEMORY CMOS 32M 4M x 8 BIT NAND-type MBM30LV0032 • DESCRIPTION The MBM30LV0032 device is a single 3.3 V 4M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 512 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to store
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DS05-20884-3E
MBM30LV0032
MBM30LV0032
526h
FPT-44P-M08
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527h
Abstract: FPT-44P-M08 MBM30LV0064
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-4E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to
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DS05-20878-4E
MBM30LV0064
MBM30LV0064
527h
FPT-44P-M08
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527H
Abstract: FPT-44P-M08 MBM30LV0032
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20884-4E FLASH MEMORY CMOS 32M 4M x 8 BIT NAND-type MBM30LV0032 • DESCRIPTION The MBM30LV0032 device is a single 3.3 V 4M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 512 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to store
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DS05-20884-4E
MBM30LV0032
MBM30LV0032
527H
FPT-44P-M08
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tr 512
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-1E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • GENERAL DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to
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DS05-20878-1E
MBM30LV0064
MBM30LV0064
D-63303
F9910
tr 512
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FPT-44P-M08
Abstract: MBM30LV0032
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20884-2E FLASH MEMORY CMOS 32M 4M x 8 BIT NAND-type MBM30LV0032 • DESCRIPTION The MBM30LV0032 device is a single 3.3 V 4M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 512 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to store
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DS05-20884-2E
MBM30LV0032
MBM30LV0032
FPT-44P-M08
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FPT-44P-M08
Abstract: MBM30LV0064 BGA-52P-M01
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-5E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to
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DS05-20878-5E
MBM30LV0064
MBM30LV0064
FPT-44P-M08
BGA-52P-M01
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20884-1E FLASH MEMORY CMOS 32M 4M x 8 BIT NAND-type MBM30LV0032 • GENERAL DESCRIPTION The MBM30LV0032 device is a single 3.3 V 4M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 512 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to store
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DS05-20884-1E
MBM30LV0032
MBM30LV0032
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20885
Abstract: 50REF FPT-48P-M19 FPT-48P-M20 MBM30LV0128
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20885-1E FLASH MEMORY CMOS 128 M 16 M x 8 BIT NAND-type MBM30LV0128 • DESCRIPTION The MBM30LV0128 device is a single 3.3 V 16 M × 8 bit NAND flash memory organized as 528 byte × 32 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to
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DS05-20885-1E
MBM30LV0128
MBM30LV0128
20885
50REF
FPT-48P-M19
FPT-48P-M20
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50REF
Abstract: FPT-48P-M19 FPT-48P-M20 MBM30LV0128
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20885-2E FLASH MEMORY CMOS 128 M 16 M x 8 BIT NAND-type MBM30LV0128 • DESCRIPTION The MBM30LV0128 device is a single 3.3 V 16 M × 8 bit NAND flash memory organized as 528 byte × 32 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to
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DS05-20885-2E
MBM30LV0128
MBM30LV0128
50REF
FPT-48P-M19
FPT-48P-M20
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samsung toggle mode NAND
Abstract: NAND FLASH SAMSUNG S3CI9E0X01 toggle mode nand samsung 1448H NAND FLASH DDP samsung 1Gb nand flash 1030h nand flash spare area assignment toggle nand
Text: S3CI9E0X01 FLASH INTERFACE DEVICE S3CI9E0X01 SPECIFICATION Version : Ver. 1.0 Date : Jul. 16. 2003 Samsung Electronics Co., LTD Semiconductor Flash Memory Product Planning & Applications SAMSUNG ELECTRONICS 1 S3CI9E0X01 FLASH INTERFACE DEVICE Revision History
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S3CI9E0X01
S3CI9E0X01
samsung toggle mode NAND
NAND FLASH SAMSUNG
toggle mode nand samsung
1448H
NAND FLASH DDP
samsung 1Gb nand flash
1030h
nand flash spare area assignment
toggle nand
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X35 Microcontrollers with PMECC Controller
Abstract: Application Notes MT29F2G08AB e 85792 SLC nand hamming code 512 bytes MT29F2G08AAD MT29F2G08A mt29f*aad nand flash ONFI 3.0 MT29F2G08ABD nand memory
Text: MLC NAND Flash Support in SAM9G15/G25/G35/X25/X35 Microcontrollers with PMECC Controller 1. Introduction The purpose of this application note is to introduce the NAND Flash technology and to describe how to interface NAND Flash memory to Atmel SAM9G15/G25/G35/X25/X35 microcontrollers. The SAM9G15/G25/G35/X25/X35
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SAM9G15/G25/G35/X25/X35
SAM9G15/G25/G35/X25/X35
1127A
23-Sep-11
X35 Microcontrollers with PMECC Controller
Application Notes
MT29F2G08AB
e 85792
SLC nand hamming code 512 bytes
MT29F2G08AAD
MT29F2G08A
mt29f*aad
nand flash ONFI 3.0
MT29F2G08ABD nand memory
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9263 and AT91SAM7SE Microcontrollers
Abstract: "bad block" smartmedia ecc SmartMedia Logical Format ARM at91sam AT91SAM9260 ARM at91sam7se NAND Flash controller ecc AT91SAM AT91SAM7SE bad block
Text: Using the ECC Controller on AT91SAM9260/9263 and AT91SAM7SE Microcontrollers 1. Scope The purpose of this document is to explain how to use the Error Corrected Code ECC Controller embedded in the AT91SAM9260/9263 and AT91SAM7SE family of ARM Thumb®-based microcontrollers. The ECC controller performs 2-bit data error
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AT91SAM9260/9263
AT91SAM7SE
AT91SAM9260/9263
6320B
05-Nov-07
9263 and AT91SAM7SE Microcontrollers
"bad block" smartmedia ecc
SmartMedia Logical Format
ARM at91sam
AT91SAM9260
ARM at91sam7se
NAND Flash controller ecc
AT91SAM
bad block
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KFG1216x2A-xxB5
Abstract: 512MB NOR FLASH mlc nand flash lsb msb OneNand DRAM SAMSUNG 256Mb NAND Flash Qualification Report 63FBGA KFG1216D2A KFG1216Q2A KFG1216U2A
Text: OneNAND512 KFG1216x2A-xxB5 FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature 512Mb KFG1216Q2A 1.8V(1.7V~1.95V) Extended 63FBGA(LF)/63FBGA KFG1216D2A 2.65V(2.4V~2.9V) Extended 63FBGA(LF)/63FBGA KFG1216U2A 3.3V(2.7V~3.6V) Industrial
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OneNAND512
KFG1216x2A-xxB5)
512Mb
KFG1216Q2A
63FBGA
/63FBGA
KFG1216D2A
KFG1216U2A
KFG1216x2A-xxB5
512MB NOR FLASH
mlc nand flash lsb msb
OneNand DRAM
SAMSUNG 256Mb NAND Flash Qualification Report
KFG1216D2A
KFG1216Q2A
KFG1216U2A
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Abstract: No abstract text available
Text: OneNAND512 KFG1216x2A-xxB6 FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) 512Mb KFG1216Q2A 1.8V(1.7V~1.95V) Extended 63FBGA(LF)/63FBGA KFG1216D2A 2.65V(2.4V~2.9V) Extended 63FBGA(LF)/63FBGA KFG1216U2A 3.3V(2.7V~3.6V) Industrial 63FBGA(LF)/63FBGA
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OneNAND512
KFG1216x2A-xxB6)
512Mb
KFG1216Q2A
KFG1216D2A
KFG1216U2A
63FBGA
/63FBGA
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Abstract: No abstract text available
Text: OneNAND512 KFG1216x2A-xxB6 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB6 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216D2A-DEB6 2.65V(2.4V~2.9V) Extended
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OneNAND512
KFG1216x2A-xxB6)
KFG1216Q2A-DEB6
KFG1216Q2A-FEB6
KFG1216D2A-DEB6
KFG1216D2A-FEB6
KFG1216U2A-DIB6
KFG1216U2A-FIB6
63FBGA
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8044H
Abstract: SAMSUNG 256Mb NAND Flash Qualification Report
Text: OneNAND512 KFG1216x2A-xxB5 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB5 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216D2A-DEB5 2.65V(2.4V~2.9V) Extended
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OneNAND512
KFG1216x2A-xxB5)
KFG1216Q2A-DEB5
KFG1216Q2A-FEB5
KFG1216D2A-DEB5
KFG1216D2A-FEB5
KFG1216U2A-DIB5
KFG1216U2A-FIB5
63FBGA
8044H
SAMSUNG 256Mb NAND Flash Qualification Report
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512MB NOR FLASH
Abstract: "bad block" smartmedia ecc oneNand samsung 2GB Nand flash Samsung Electronics. NAND flash memory code lock circuit flow chart KFG1216 mlc nand flash lsb msb NAND flash memory SAMSUNG NAND FLASH
Text: OneNAND512 KFG1216x2A-xxB5 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB5 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216U2A-DIB5 3.3V(2.7V~3.6V) Industrial
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OneNAND512
KFG1216x2A-xxB5)
KFG1216Q2A-DEB5
512Mb
63FBGA
KFG1216Q2A-FEB5
63FBGA
KFG1216U2A-DIB5
KFG1216U2A-FIB5
512MB NOR FLASH
"bad block" smartmedia ecc
oneNand
samsung 2GB Nand flash
Samsung Electronics. NAND flash memory
code lock circuit flow chart
KFG1216
mlc nand flash lsb msb
NAND flash memory
SAMSUNG NAND FLASH
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SAMSUNG 256Mb NAND Flash Qualification Report
Abstract: No abstract text available
Text: OneNAND512Mb KFG1216U2B-xIB6 FLASH MEMORY KFG1216U2B 512Mb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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OneNAND512Mb
KFG1216U2B-xIB6)
KFG1216U2B
512Mb
80x11
KFG1216U2B)
63ball
SAMSUNG 256Mb NAND Flash Qualification Report
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Samsung 2Gb 3V MLC Nand flash
Abstract: 63FBGA KFM1216Q2A-DEB6 schematic Samsung lcd power supply unit SLC NAND endurance 100k
Text: MuxOneNAND512 KFM1216Q2A-DEB6 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 512Mb KFM1216Q2A-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.2 Date: Dec. 23, 2005 1 MuxOneNAND512(KFM1216Q2A-DEB6) 1.0 FLASH MEMORY
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MuxOneNAND512
KFM1216Q2A-DEB6)
512Mb
KFM1216Q2A-DEB6
63FBGA
63-FBGA-9
Samsung 2Gb 3V MLC Nand flash
KFM1216Q2A-DEB6
schematic Samsung lcd power supply unit
SLC NAND endurance 100k
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Abstract: No abstract text available
Text: MuxOneNAND512 KFM1216Q2A-DEB6 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 512Mb KFM1216Q2A-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0 Date: May 17th, 2005 1 MuxOneNAND512(KFM1216Q2A-DEB6) 1.0 FLASH MEMORY
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MuxOneNAND512
KFM1216Q2A-DEB6)
512Mb
KFM1216Q2A-DEB6
63FBGA
63-FBGA-9
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KFG1G16U2C
Abstract: 63FBGA KFG1G16U2
Text: OneNAND1Gb KFG1G16U2C-xIB6 FLASH MEMORY KFG1G16U2C 1Gb OneNAND C-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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KFG1G16U2C-xIB6)
KFG1G16U2C
80x11
KFG1G16U2C)
KFG1G16U2C
63FBGA
KFG1G16U2
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KFG1G16U2C
Abstract: 63FBGA
Text: Advanced OneNAND1Gb KFG1G16U2C-xIB6 FLASH MEMORY KFG1G16U2C 1Gb OneNAND C-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KFG1G16U2C-xIB6)
KFG1G16U2C
80x11
KFG1G16U2C)
KFG1G16U2C
63FBGA
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