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    NA MARKING SOT23 Search Results

    NA MARKING SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    NA MARKING SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KRC101S

    Abstract: KRC101
    Text: SEMICONDUCTOR KRC101S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking NA No. 1 Item Marking Device Mark NA KRC101S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


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    PDF KRC101S OT-23 KRC101S KRC101

    Transistor hFE CLASSIFICATION Marking CE

    Abstract: marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P
    Text: MMBT2222A TRANSISTOR NPN PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES Epitaxial planar die construction Complementary PNP Type available (MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P MECHANCIAL DATA NA Pb-free; RoHS-compliant


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    PDF MMBT2222A OT-23 OT-23 MMBT2907A) -55to Transistor hFE CLASSIFICATION Marking CE marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P

    D2E diode

    Abstract: diode d2e RB491D Schottky Diode Marking sot-23 NA MARKING
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diode SOT-23 RB491D Schottky barrier Diodes 3- FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 1+ 2 NA Marking: D2E Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃


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    PDF OT-23 RB491D D2E diode diode d2e RB491D Schottky Diode Marking sot-23 NA MARKING

    NXP date code marking

    Abstract: marking 1B marking code v6 SOT23 NXP MARKING SMD IC CODE PMBT2222 SOT23 NXP power dissipation TO-236AB MARKING CODE SMD IC PMBT2222A,215 smd code marking .1p PMBT2222A
    Text: PMBT2222; PMBT2222A NPN switching transistors Rev. 6 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description NPN switching transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. Table 1. Product overview


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    PDF PMBT2222; PMBT2222A O-236AB) PMBT2222 PMBT2222A O-236AB PMBT2907 PMBT2907A NXP date code marking marking 1B marking code v6 SOT23 NXP MARKING SMD IC CODE SOT23 NXP power dissipation TO-236AB MARKING CODE SMD IC PMBT2222A,215 smd code marking .1p

    FMMT497

    Abstract: MARKING SMD npn TRANSISTOR
    Text: Transistors SMD Type High Voltage High Performance Transistor FMMT497 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 SOT23 NPN silicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01


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    PDF FMMT497 OT-23 100mA 250mA 100mA, 250mA, 100MHz FMMT497 MARKING SMD npn TRANSISTOR

    FMMT596

    Abstract: smd transistor marking 03
    Text: Transistors SMD Type High Voltage Transistor FMMT596 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 SOT23 PNP silicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter


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    PDF FMMT596 OT-23 -200V -100mA, -10mA -250mA, -25mA -250mA FMMT596 smd transistor marking 03

    FMMT494

    Abstract: transistor smd marking BR
    Text: Transistors SMD Type Medium Power Transistor FMMT494 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 SOT23 NPN Silicon Planar 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter


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    PDF FMMT494 OT-23 250mA 500mA 250mA, 500mA, 100MHz FMMT494 transistor smd marking BR

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification FMMT597 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 SOT23 PNP silicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter


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    PDF FMMT597 OT-23 -50mA, -100mA, -20mA -100mA -50mA

    597 smd transistor

    Abstract: FMMT597 NA MARKING SOT23 10V-100 PNP POWER TRANSISTOR SOT23 transistor smd marking NA sot-23
    Text: Transistors SMD Type High Voltage Transistor FMMT597 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 SOT23 PNP silicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter


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    PDF FMMT597 OT-23 -250V -50mA, -100mA, -20mA -100mA -50mA 597 smd transistor FMMT597 NA MARKING SOT23 10V-100 PNP POWER TRANSISTOR SOT23 transistor smd marking NA sot-23

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC Transistor SMD Type Product specification FMMT596 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 SOT23 PNP silicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01


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    PDF FMMT596 OT-23 -100mA, -10mA -250mA, -25mA -250mA -100mA

    FMMT495

    Abstract: No abstract text available
    Text: Transistors SMD Type Power High Performance Transistor FMMT495 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 SOT23 NPN silicon planar medium 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01


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    PDF FMMT495 OT-23 250mA 500mA 250mA, 500mA, 100MHz FMMT495

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC Transistor SMD Type Product specification FMMT495 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 SOT23 NPN silicon planar medium 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05


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    PDF FMMT495 OT-23 250mA 500mA 250mA, 500mA, 100MHz

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC Transistor SMD Type Product specification FMMT593 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 SOT23 PNP silicon planar 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01


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    PDF FMMT593 OT-23 -250mA, -25mA -500mA, -50mA -250mA

    TRANSISTOR SMD PNP 1A

    Abstract: NA MARKING SOT23 FMMT593 transistor smd marking NA sot-23 593 SOT23
    Text: Transistors SMD Type High Voltage Transistor FMMT593 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 SOT23 PNP silicon planar 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter


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    PDF FMMT593 OT-23 -250mA, -25mA -500mA, -50mA -250mA TRANSISTOR SMD PNP 1A NA MARKING SOT23 FMMT593 transistor smd marking NA sot-23 593 SOT23

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification FMMT634 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Highest current capability SOT23 darlington 0.55 625mW power dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


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    PDF FMMT634 OT-23 625mW 100mA, 100MHz 500mA,

    smd marking 634

    Abstract: smd transistor 5k smd transistor MARKING 2A sot23 FMMT634 50K MARKING SOT23 high voltage TRANSISTOR SMD 1a 9 IS920
    Text: Transistors SMD Type Power Darlington Transistor FMMT634 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Highest current capability SOT23 darlington 0.55 625mW power dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


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    PDF FMMT634 OT-23 625mW 100mA, 100MHz 500mA, smd marking 634 smd transistor 5k smd transistor MARKING 2A sot23 FMMT634 50K MARKING SOT23 high voltage TRANSISTOR SMD 1a 9 IS920

    91A SOT23

    Abstract: FMMT591A FMMT491A DSA003699 91A PNP
    Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT591A FMMT591A ISSUE 3 - OCTOBER 1995 FEATURES Low equivalent on resistance RCE sat = 350mΩ at 1A TYPICAL CHARACTERISTICS 0.6 0.6 +25 ° C 0.5 0.5 0.4 0.4 0.3 SYMBOL VALUE UNIT VCBO -40 V 0.1 Collector-Emitter Voltage


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    PDF FMMT591A FMMT491A 100mA -100mA* -500mA* -50mA, 100MHz 91A SOT23 FMMT591A FMMT491A DSA003699 91A PNP

    MARKING EK SOT-23

    Abstract: 30ma 40v npn smd transistor EK BCX41 smd transistor BCX41 EK MARKING SOT23 VCE-100V marking EK
    Text: Transistors SMD Type Medium Power Transistor BCX41 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 SOT23 NPN silicon planar 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter


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    PDF BCX41 OT-23 300mA, 100mA 200mA 20MHz MARKING EK SOT-23 30ma 40v npn smd transistor EK BCX41 smd transistor BCX41 EK MARKING SOT23 VCE-100V marking EK

    smd transistor t6

    Abstract: SMD TRANSISTOR MARKING BR BSS63R t6 marking sot23
    Text: Transistors SMD Type High Voltage Transistor BSS63R SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 SOT23 PNP silicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter


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    PDF BSS63R OT-23 -25mA, -10mA -25mA 35MHz smd transistor t6 SMD TRANSISTOR MARKING BR BSS63R t6 marking sot23

    Untitled

    Abstract: No abstract text available
    Text: SMD Type SMD Type Product specification BSS63R SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 SOT23 PNP silicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter


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    PDF BSS63R OT-23 -25mA, -10mA -25mA 35MHz

    marking K2 diode

    Abstract: MARKING 5D DIODE schottky diode marking A7
    Text: DIODE wffife SOT-23/TO-236AB ‘TM PD ’ GENERAL-PURPOSE a n d LOW-LEAKAGE D IO D ES ELECTRICAL CHARACTERISTICS a t T . = 25°C vF Description *rr Max. Max. nA (ns) <PF) 1 ,2 ,3 10 25 4.0 6.0 ANCK VBR Min. Max. Marking (mA) (V) (V) @IF (mA) 1.0 Device Type


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    PDF OT-23/TO-236AB TMPD914 TMPD2836 TMPD2838 TMPD4148 TMPD6050 TMPD7000 A8920SLR) BAV70 BAV99 marking K2 diode MARKING 5D DIODE schottky diode marking A7

    marking C1

    Abstract: TMPTA70 TMPT5401 h2t1
    Text: PNP TRANSISTORS SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS at T. = 25°C V BF CBO v (BR)CEO V(BR)EBO Max. @ v CB Device hFE We «T @ lc @ v CE Max. @ lc Marking (V) (V) (V) (nA) BCW29 C1 303 32 5.0 100 20 120 260 2.0 BCW30 C2 3ID3 32 5.0 100 20 215 500 2.0


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    PDF OT-23/TO-236AB BCW29 BCW30 BCW61A BCW61B BCW61C BCW61D BCW67A BCW67B BCW68F marking C1 TMPTA70 TMPT5401 h2t1

    1403

    Abstract: R20 marking MMBD1401 MMBD1404 MMBD1405 UMBD1403 M3325
    Text: MMBD1401 /1403 /1404 /1405 Discrete POWER & Signal Technologies Na t i o n a l Semiconductor & M M B D 1 401 / 1 4 0 3 7 1 4 0 4 / 1 4 0 5 JH 29 m et MARKING MMBD1401 29 MMBD1404 33 MMBD1403 32 MMBD1405 34 SOT-23 High Voltage General Purpose Diode Sourced from Process 1H.


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    PDF MMBD1401 OT-23 MMBD1404 UMBD1403 MMBD1405 b50113D 1403 R20 marking M3325

    MAM25S

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN high-voltage transistor FEATURES PMBT5550 PINNING • Low current max. 300 mA PIN • Low voltage (max. 140 V). 1 2 emitter APPLICATIONS 3 collector DESCRIPTION base • Telephony. DESCRIPTION — 3 NPN high-voltage transistor in a SOT23 plastic package.


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    PDF PMBT5550 PMBT5401. MAM25S MAM25S