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    N9 TRANSISTOR Search Results

    N9 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N9 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DMC364A7 Tentative Total pages page DMC364A7 Silicon NPN epitaxial planar type Tr1 Silicon NPN epitaxial planar type (Tr2) For digital circuits Marking Symbol : N9 Package Code : SSSMini6-F2-B Internal Connection 6 5 Absolute Maximum Ratings Ta = 25 °C


    Original     		PDF DMC364A7

    DRCF114W

    Abstract: No abstract text available
    Text: DRCF114W Tentative Total pages page DRCF114W Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N9 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DRCF114W DRCF114W

    50-12P1

    Abstract: S2485
    Text: VKI 50-12P1 IC25 = 49 A = 1200 V VCES VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 Pin arangement see outlines T16 t O7 S18 Features


    Original     		PDF 50-12P1 42T120 50-12P1 S2485

    25T60

    Abstract: .25T60 RG60s
    Text: VKI 50-06P1 IC25 = 42.5 A = 600 V VCES VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 T16 Pin arangement see outlines t O7 S18 Features Maximum Ratings VCES


    Original     		PDF 50-06P1 25T60 25T60 .25T60 RG60s

    237td

    Abstract: No abstract text available
    Text: VKI 50-06P1 IC25 = 42.5 A = 600 V VCES VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 T16 O7 S18 Pin arangement see outlines Features Symbol Conditions


    Original     		PDF 50-06P1 25T60 237td

    50-12P1

    Abstract: No abstract text available
    Text: VKI 50-12P1 IC25 = 49 A = 1200 V VCES VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 Pin arangement see outlines T16 O7 S18


    Original     		PDF 50-12P1 42T120 50-12P1

    RS468

    Abstract: transistor dg sot-23 BENT LEAD transistor TO-92 Outline Dimensions P005 n7 transistor P012 B W4 Transistor GP007 transistor W4 sot-23
    Text: Package Options TO-39 N2, B TO-52 (N9) TO-92 (N3, L, LL) DIP Plastic (N4, N6, NA, J, P) DIP Ceramic (NC, N7, P, C) Side Braze (NC, N7) TO-220 (N5) 7-Pin TO-220 (K2) TO-243 AA (SOT-89) (N8) SOT-23 (K1) TO-3 (N1) Die in Wafer Form (NW, XW) Die on adhesive


    Original     		PDF O-220 O-243 OT-89) OT-23 RS468 transistor dg sot-23 BENT LEAD transistor TO-92 Outline Dimensions P005 n7 transistor P012 B W4 Transistor GP007 transistor W4 sot-23

    LDTC124GET1G

    Abstract: SC-89
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC124GET1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an


    Original     		PDF LDTC124GET1G SC-89 463C-01 463C-02. LDTC124GET1G SC-89

    REF 200U K

    Abstract: LDTC123JWT1G Transistor marking 1M
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC123JWT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an


    Original     		PDF LDTC123JWT1G REF 200U K LDTC123JWT1G Transistor marking 1M

    SOT23 W1P

    Abstract: MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323
    Text: DISCRETE SEMICONDUCTORS Marking codes RF Wideband Transistors Supersedes data of 1997 Nov 21 1999 Jul 21 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 BF547W BF747 BFC505 SOT23


    Original     		PDF BF547 BF547W BF747 BFC505 OT323 OT353 OT143 SOT23 W1P MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323

    MHW5181A

    Abstract: MHW5142A MHW5181 GP 140 300C MHW5182A MHW5142 MHW5142AID
    Text: MOTOROM SEMICONDUCTOR ,’0 TECHNICAL Order this document by MHW5142AID DATA -L The RF Line 450 MHz CAW Amplifier , MHW5142A . . . designed specifically for 450 MHz CATV applications. Features ion-implanted arsenic emitter transistors with 7.0 GHz fi and an all gold metallization


    Original     		PDF MHW5142AID MHW5142A MHW5142A/D MHW5181A MHW5142A MHW5181 GP 140 300C MHW5182A MHW5142 MHW5142AID

    BFG540 N43

    Abstract: w1p 22 SOT23 W1P sot143 Marking code V12 "W1P" f763 SOT89 MARKING CODE marking code V3 SOT89 N5 MARKING CODE V3 marking code
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Marking codes RF Wideband Transistors 1997 Nov 22 File under Discrete Semiconductors, SC14 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE MARKING CODE


    Original     		PDF BF547 BF547W BF689K BF747 OT323 OT353 OT143 BFG540 N43 w1p 22 SOT23 W1P sot143 Marking code V12 "W1P" f763 SOT89 MARKING CODE marking code V3 SOT89 N5 MARKING CODE V3 marking code

    Untitled

    Abstract: No abstract text available
    Text: AN11199 UBA2015 TL Ballast for multiple lamps with independent lamp operation Rev. 1 — 24 December 2012 Application note Document information Info Content Keywords UBA2015, tube lamp TL , Independent lamp operation (ILO) Abstract This application note describes how to drive multiple lamps with a


    Original     		PDF AN11199 UBA2015 UBA2015,

    LPC 836 red laser diode

    Abstract: LPC 826 red laser diode CN802 PWB 826 service manual transistor N14 193 K2EEYB000001 CN603 DL3U21518AAA toshiba dvd hdd schematic diagram ic 804
    Text: ORDER NO. CPD0603050C1 Notebook Computer CF-74 This is the Service Manual for the following areas. M …for U.S.A. and Canada Model No. CF-74CCBAXBM 2006 Matsushita Electric Industrial Co., Ltd. All rights reserved. Unauthorized copying and distribution is a violation of law.


    Original     		PDF CPD0603050C1 CF-74 CF-74CCBAXBM EN60825 CF-74 LPC 836 red laser diode LPC 826 red laser diode CN802 PWB 826 service manual transistor N14 193 K2EEYB000001 CN603 DL3U21518AAA toshiba dvd hdd schematic diagram ic 804

    W521

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR * 3 GREEN O TECHNICAL Order this document by MGSF3441XT1/D DATA LINE’” MGsF344iml Preliminary /nformation MotorolaPrefarred Device Low r~S(on Small-Signal MOSFE7S TMOS Single P-Channel Field Effect Transistors Pan of the GreenLineTM Potiolio


    Original     		PDF MGSF3441XT1/D MGsF344iml 30M75-2140 MGSF3441XT11D W521

    Untitled

    Abstract: No abstract text available
    Text: measuring Positive Displacement Flowmeter • monitoring • analyzing DOM ● Threaded, Flanged, and High Pressure Series ● Aluminum or Stainless Steel Bodies ● Measures Liquids with Viscosities to 1,000 cPs Higher with Special Cut Rotors ● Operating Pressures to 5,800 PSIG


    Original     		PDF

    small signal transistor MOTOROLA

    Abstract: w21 transistor MOTOROLA small signal transistor 2N3821JTX PHW4101 FIDL 5Bp transistor MOTOROLA TRANSISTOR
    Text: MOTOROU Orderthis document by2N3621JTND SEMICONDUCTOR TECHNICAL DATA ● 2N3821JTX, JANS Processed per MlL4-19500/375 N4hannel, Depletion Mode Junction Field-Effect Transistor JFETs .designed for small-ignal, Iowoise amplifier applications. * ~,)> . .$$”


    Original     		PDF by2N3621JTND 2N3821JTX, MlL4-19500/375 TM06AF 2N3821JTX PHW4101 2Ns21JmD small signal transistor MOTOROLA w21 transistor MOTOROLA small signal transistor FIDL 5Bp transistor MOTOROLA TRANSISTOR

    VVQ4000-50B-C8

    Abstract: SMC - SY5120 SY3120-5LOU-C6-Q jst connector JST p-2 58A03 SY3140-5LOU-Q SY5120-L-C6 DIN43650C 664AB JISC0704
    Text: CAT.EUS11-83 B -UK 5 Port Solenoid Valve Power Consumption With Power Saving Circuit SY Series Improved pilot valve Pilot valve cover is stronger using stainless steel. Mounting thread is also reinforced from size M1.7 to M2.  Flow Characteristics Series


    Original     		PDF EUS11-83 SY3000 SY5000 SY7000 SY9000 G15-10-01) ARBY3000 ARBY3000-05--2 VVQ4000-50B-C8 SMC - SY5120 SY3120-5LOU-C6-Q jst connector JST p-2 58A03 SY3140-5LOU-Q SY5120-L-C6 DIN43650C 664AB JISC0704

    KRC416V

    Abstract: N912 KRC417V KRC418V KRC419V KRC420V KRC421V KRC422V
    Text: SEMICONDUCTOR KRC416V~KRC422V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. G 1 3 K H A D 2 ᴌReduce a Quantity of Parts and Manufacturing Process.


    Original     		PDF KRC416V KRC422V KRC421V KRC420V KRC418V KRC417V KRC419V KRC416V N912 KRC417V KRC418V KRC419V KRC420V KRC421V KRC422V

    FCX5550

    Abstract: FCX5401 DS155
    Text: FCX5550 SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FEATURES * HIGH V ceo =1 40V. * * LOW V c eis at =0.25V. C O M PLEM ENTARY TYPE - FCX5401 PARTMARKING DETAILS - N9 ABSOLUTE M A X IM U M RATINGS PARAM ETER SYM BO L Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF FCX5401 FCX5550 100mA 100MHz 250uA, DD0A32T DS155 FCX5550

    TCA 2025 b

    Abstract: transistor v63 TCA 2025 STH4N90 STH4N90FI 0C183
    Text: Zu SGS-THOMSON S TH 4 N90 S TH 4 N9 0 FI « M L Iig T T IM O tS S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V STH4N90 STH4N90F! dss 900 V 900 V R DS on Id < 3.2 Q < 3.2 Q 4.2 A 2.7 A . TYPICAL RDS(on) = 2.9 Q . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED


    OCR Scan     		PDF STH4N90 STH4N90FI STH4N90 STH4N90FI P025C STH4N90/FI O-218 OT-93) TCA 2025 b transistor v63 TCA 2025 0C183

    SOT23 W1P

    Abstract: BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 marking code V3 w1p code
    Text: Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 SOT23 BF547W BF689K SOT323 SOT54 BF747 SOT23 SOT54 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 BFG10/X BFG10W/X BFG11 BFG11/X BFG11W/X


    OCR Scan     		PDF BF547 BF547W BF689K BF747 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 SOT23 W1P BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 marking code V3 w1p code

    KRC116S

    Abstract: KRC117S KRC118S KRC119S KRC120S KRC121S KRC122S KRC118 mark n2
    Text: KRC116SSEMICONDUCTOR KRC122S EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.


    OCR Scan     		PDF krc116s- krc122s KRC116S KRC117S KRC118S KRC119S KRC120S KRC121S KRC122S KRC118S KRC118 mark n2

    kec 168

    Abstract: KRC416 KRC417 KRC418 KRC419 KRC420 KRC421 KRC422 r2kq
    Text: KOREA ELECTRONICS CO.,LTD. KRC416KRC422 SEMICONDUCTOR EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.


    OCR Scan     		PDF KRC416-KRC422 KRC416 KRC417 KRC418 KRC419 KRC420 KRC421 KRC422 MAXIMU17 KRC418 kec 168 r2kq