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    Samsung Semiconductor SL-B8U2N82SXWW

    LED MOD K-SER LNR 3500K
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    Samsung Semiconductor SL-B9V2N82SXWW

    LED MOD K-SER LNR 3000K
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    Samsung Semiconductor SL-B8T2N82SXWW

    LED MOD K-SER LNR 4000K
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    Panduit Corp N82SPS

    48 RU 1200MM N TYPE CABINET STAN
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    N82S Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    N82S09 Signetics 576-Bit Bipolar RAM 64x9 Scan PDF
    N82S09 Signetics Bipolar Memory IC Data Book 1982 Scan PDF
    N82S09I Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S09I Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    N82S09N Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S100I Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S100N Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S100N Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    N82S101I Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S101N Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S101N Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    N82S102I Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S102N Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S102N Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    N82S103I Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S103N Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S103N Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    N82S104AF Signetics FIELD PROGRAMMABLE LOGIC SEQUENCER (16x48x8) Scan PDF
    N82S104AN Signetics FIELD PROGRAMMABLE LOGIC SEQUENCER (16x48x8) Scan PDF
    N82S104N Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    ...

    N82S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd marking 25J

    Abstract: WS57C291C-45TI WS57C291C-35TMB MARKING 25J
    Text: WS57C191C/291C HIGH SPEED 2K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs — t ACC = 25 ns — t CS = 12 ns • Immune to Latch-UP • Low Power Consumption • Fast Programming


    Original     		PDF WS57C191C/291C Am27S191/291 N82S191 WS57C191C/291C MIL-STD-883C WS57C291C WS57C291C-25S smd marking 25J WS57C291C-45TI WS57C291C-35TMB MARKING 25J

    82S185

    Abstract: 82S184 SIGNETICS* fusing procedure SIGNETICS* fusing procedure 185
    Text: FEATURES • Low power dissipation: SO^W/bit typ • Address a cce ss time: N82S184/185: 100ns max S 8 2 S 184/185: 150ns max • Input loading: N82S184/185: -100MA max S82S184/185: -150/iA max • On-chip address decoding • Output options: 82S184: Open collector


    OCR Scan     		PDF 82S184-I 82S185-I 82S184 82S185 SIGNETICS* fusing procedure SIGNETICS* fusing procedure 185

    N82S09I

    Abstract: 82S09 82S101 N82S09 S82S09
    Text: S ig n e tic s Mem ories - Bipolar Ram N82S09 — 576 Bit Bipolar Ram G E N E R A L D E S C R IP TIO N The organization o f this device allow s b y te m anip u la tio n o f d ata, in clu d in g p a rity . W here p a rity is n o t m o n ito re d , the n in th b it can be used as a flag or status in d ic a to r fo r each


    OCR Scan     		PDF N82S09 30nsr 82S09 N82S09I 82S101 S82S09

    74s* programming

    Abstract: N82S16 prom 256x4 bit MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
    Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR M EM ORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIGNETICS T.l. SIGNETICS *10149 N82S130 N82S131


    OCR Scan     		PDF MCM10149 MCM7620 N82S130 MCM7621 N82S131 MCM7643C N82S137 N82HS137 MCM7641C N82S141 74s* programming N82S16 prom 256x4 bit MCM10149 MCM7681C N82HS137

    Untitled

    Abstract: No abstract text available
    Text: Signetics Memories - Bipolar Ram C O N N E C TIO N D IA G R A M N82S208 - 2048 Bit Bipolar Ram 256 x 8 G E N E R A L DE SC R IPTIO N The 82S208 data inputs and o u tp u ts are com m o n (com m on I/O ) w ith separate o u tp u t disable (OD) line th a t allow s ease


    OCR Scan     		PDF N82S208 82S208

    82S230

    Abstract: 82S231 N82S230N N82S231N Signetics TTL 82S130 S82S23
    Text: Signetics Memories - Bipolar Rorn N82S230, N82S231 - 2048 Bit Bipolar Rom 512 x 4 C O N N E C T IO N D IA G R A M Both 82S230 and 82S231 devices are available in the commercial and m ilitary temperature ranges. For the commercial temperature range (0 °C to +75°C) specify


    OCR Scan     		PDF N82S230, N82S231 82S230 82S231 N82S230/231, S82S230/231. N82S230/231: S82S230/231 N82S230N N82S231N Signetics TTL 82S130 S82S23

    SIGNETICS 268

    Abstract: Signetics ITT gemini 24 SIGNETICS N82S25 N3101 N74S189 N74S89 ifr 540 gemini
    Text: Signetics Memories - Bipolar Ram N82S25, N3101 A , N74S89 and N 74S189 Series Bipolar Scratch Pad Mem ory 1 6 x 4 Continued 64 Bit BLOCK D I A G R A M G N D = (8 ) ( ) * DAT* IN *N D o u t P in n u m b e r PLEA SE Q U O TE STOCK NO. A N D M A N U F A C T U R E R S P A R T NO. WHEN O R DERIN G


    OCR Scan     		PDF N82S25, N3101 N74S89 N74S189 SIGNETICS 268 Signetics ITT gemini 24 SIGNETICS N82S25 ifr 540 gemini

    N82S137F

    Abstract: N82S136 82S137 82S136 N82S136F N82S137 SIGNETICS prom 2.1 connection diagram
    Text: S ig n e tic s Memories - Bipolar Proms N82S136, N82S137 — 4096 Bit Field Programmable Bipolar Prom C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T he 8 2 S 1 3 6 and 8 2 S 1 3 7 are field programmable. The standard 8 2 S 1 3 6 and 8 2 S 1 3 7 are supplied w ith all outputs


    OCR Scan     		PDF N82S136, N82S137 82S136 82S137 N82-S136/137, N82S137F N82S136 N82S136F N82S137 SIGNETICS prom 2.1 connection diagram

    N82S123F

    Abstract: N82S123N N82S23F 82S123 programming N82S23N 82S123 SIGNETICS prom signetics 82S123 n82s123 82S23
    Text: Signetics Mem ories - Bipolar Prom s Programming Signetics P R O M S CONNECTION DIAGRAM PROM programming is available through ITT Gemini for further details please contact your local sales office. N82S23/N82S123 PROM 256 Bit Bipolar GENERAL DESCRIPTION The 82S23 and 82S123 are field programmable, which


    OCR Scan     		PDF N82S23/N82S123 82S23 82S123 N82S123F N82S123N N82S23F 82S123 programming N82S23N SIGNETICS prom signetics 82S123 n82s123

    82s185

    Abstract: No abstract text available
    Text: FEATURES • Low power dissipation: 50/xW/bit typ • Address access time: N82S184/185: 100ns max S82S184/185: 150ns max • Input loading: N82S184/185: -1 0 0 MA max S82S184/185: -150/xA max • On-chip address decoding • Output options: 82S184: Open collector


    OCR Scan     		PDF 82S184 82S185

    smd marking WS

    Abstract: No abstract text available
    Text: WS57C191B/291B MILITARY HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs Ultra-Fast Access Time — 45 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA • Fast Programming


    OCR Scan     		PDF WS57C191B/291B Am27S191/291 N82S191 WS57C191B/291B aD-883C MIL-STD-883C smd marking WS

    2 k bipolar prom

    Abstract: 3A4C
    Text: WS57C191 C/291 C MILITARY HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time — *ACC = 35 ns — t c s = 20 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA


    OCR Scan     		PDF WS57C191 C/291 Am27S191/291 N82S191 WS57C191C WS57C191C-35DMB 2 k bipolar prom 3A4C

    82S104

    Abstract: N82S105N ifr 540 82S105 N82S106N N82S107N n82s106 1x48 N82S104N
    Text: Signetics Memories - Bipolar FP LS N82S106, N82S107 Field Pro­ grammable RO M Patch 16 x 48 x 8 Cont. R E FER EN C E T A B L E TYPE NO. STOCK NO. N82S106N N82S107N 56478R 56479G O U T L IN E DRW G. NO. 5 5 IM82S104/105 Field Programmable Logic Sequencer


    OCR Scan     		PDF N82S106, N82S107 N82S106N 56478R N82S107N 56479G N82S106/107 S82S106/1 N82S104/105 82S104 N82S105N ifr 540 82S105 n82s106 1x48 N82S104N

    N82S126F

    Abstract: N82S129N N82S129F N82S126N 82S129 N82S126 itt 129 ane fuse led matrix 32X32 82S126
    Text: S ig n e tic s Memories - Bipolar Proms N82S126, N82S129 - 1024 Bit Field Programmable Bipolar Prom C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP TIO N The 82S 126 and 82S 129 are fie ld program m able, w hich means th a t custom patterns are im m e diately available by


    OCR Scan     		PDF N82S126, N82S129 82S126 82S129 N82S126F N82S129N N82S129F N82S126N N82S126 itt 129 ane fuse led matrix 32X32

    82S215

    Abstract: N82S15N n82s215
    Text: Signetics M em ories - Bipolar Rom N82S15 — 4096 Bit Bipolar Rom 512 x 8 C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N The 8 2 S 2 1 5 includes on-chip decodin g and 2 ch ip enable in­ puts for ease of m em ory expansion. T h e y feature tri-state


    OCR Scan     		PDF N82S15 82S215 N82S15N n82s215

    BIPOLAR PROM PROGRAMMING SPECIFICATION

    Abstract: No abstract text available
    Text: WA F E R SCALE INTEGRATION 3 C E ^SBTb^O D 00QGS2Ü b IÜIAF Vl^S57C43C ADVANCE INFORMATION WAFERSCALE INTEGRATION, INC. T - ' V ß - T P i HIGH SPEED 4K x 8 CMOS PROM/RPROM KEY FEATURES Pin Com patible with AM27S43 and N82S321 Bipolar PROMs • Ultra-Fast Access Time


    OCR Scan     		PDF 00QGS2Ü S57C43C AM27S43 N82S321 WS57C43C BIPOLAR PROM PROGRAMMING SPECIFICATION

    Untitled

    Abstract: No abstract text available
    Text: WS57C43B HIGH SPEED 4K x 8 CMOS PROM/RPROM K E Y FEA TU R E S • U ltra-Fast A ccess Tim e • Pin C om patible with A m 27S 43 and N82S321 B ipolar P RO M s — 35 ns • Low Pow er C onsum ption Im m u ne to Latch-U p • Fast Program m ing — Up to 200 mA


    OCR Scan     		PDF WS57C43B N82S321

    Untitled

    Abstract: No abstract text available
    Text: WS57C191 C/291 C HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs — *ACC = 25 ns — t c s = 12 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA


    OCR Scan     		PDF WS57C191 C/291 Am27S191/291 N82S191 WS57C191C/291C S57C191 WS57C291C-45T WS57C291C-45TI WS57C291C-45TMB*

    smd marking 25J

    Abstract: No abstract text available
    Text: WS57C191 C/291 C HIGH SPEED 2K X 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time — Ucc = 25 ns — t c s = 12 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA • ESD Protection Exceeds 2000V


    OCR Scan     		PDF WS57C191 C/291 Am27S191/291 N82S191 MIL-STD-883C MIL-STD-883C smd marking 25J

    WS57C191C55DMB

    Abstract: N82S1
    Text: WS57C191C/291C MILITARY HIGH SPEED 2Kx 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time f ACC = 35 ns — t c s = 20 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA


    OCR Scan     		PDF WS57C191C/291C Am27S191/291 N82S191 WS57C191 C/291 MIL-STD-883C MIL-STD-883C WS57C191C55DMB N82S1

    Untitled

    Abstract: No abstract text available
    Text: WS57C191 C/291 C PRELIMINARY HIGH SPEED 2K x 8 CMOS PROM/RPROM K E Y FEA TU R E S • Ultra-Fast Access Time • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs — t ACC = 25 ns *cs 12 ns • Low Power Consumption • immune to Latch-UP — Up to 200 mA


    OCR Scan     		PDF WS57C191 C/291 Am27S191/291 N82S191 S57C191C/291C S57C191 MIL-STD-883C

    SIGNETICS

    Abstract: N82S137 signetics bipolar memory cross reference N82S191 n82s25 TBP28P86 74S289 N82S141 N82S129 TBP24S41
    Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR MEMORY CROSS REFERENCE BIPOLAR MEMORY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIG NETICS T.l. SIG NETICS *10149 N82S130 N82S131


    OCR Scan     		PDF MCM10149 MCM7620 N82S130 MCM7621 N82S131 MCM7643C N82S137 N82HS137 MCM7641C N82S141 SIGNETICS N82S137 signetics bipolar memory cross reference N82S191 n82s25 TBP28P86 74S289 N82S141 N82S129 TBP24S41

    82S114

    Abstract: N82S114N fet ifr 540 82S214 82S215 N82S114F S82S114F signetics 82S 56306E
    Text: S ig n e tic s Memories - Bipolar Proms C O N N E C T IO N N82S114 - 2048 Bit Field Programmable Bipolar Prom 256 x 8 G E N E R A L D E S C R IP T IO N T h e 8 2 S 1 14 is field program m able and include on-chip decoding and 2 ch ip enable inputs far ease o f m em ory


    OCR Scan     		PDF N82S114 82S114 N82S114N fet ifr 540 82S214 82S215 N82S114F S82S114F signetics 82S 56306E

    82S210

    Abstract: N82S210 N82S210F S82S210 S82S210F
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 2304-BIT BIPOLAR RAM 256 X 9 DESCRIPTION The 82S210 data inputs and outputs are common (common I/O) w ith separate out­ put disable (OD) line that allows ease of read/write operations using a common bus. 82S210 (T.S.) (0°C to 75 °C) specify N82S210F or N and


    OCR Scan     		PDF 2304-BIT 256x9) 82S210 N82S210F S82S210F. 82S210 N82S210 S82S210 S82S210F