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    N6 SOT23 Search Results

    N6 SOT23 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation

    N6 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking n6 transistor

    Abstract: KRC119S MARK N6
    Text: SEMICONDUCTOR KRC119S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking N6 No. 1 Item Marking Device Mark N6 KRC119S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


    Original     		PDF KRC119S OT-23 marking n6 transistor KRC119S MARK N6

    RS468

    Abstract: transistor dg sot-23 BENT LEAD transistor TO-92 Outline Dimensions P005 n7 transistor P012 B W4 Transistor GP007 transistor W4 sot-23
    Text: Package Options TO-39 N2, B TO-52 (N9) TO-92 (N3, L, LL) DIP Plastic (N4, N6, NA, J, P) DIP Ceramic (NC, N7, P, C) Side Braze (NC, N7) TO-220 (N5) 7-Pin TO-220 (K2) TO-243 AA (SOT-89) (N8) SOT-23 (K1) TO-3 (N1) Die in Wafer Form (NW, XW) Die on adhesive


    Original     		PDF O-220 O-243 OT-89) OT-23 RS468 transistor dg sot-23 BENT LEAD transistor TO-92 Outline Dimensions P005 n7 transistor P012 B W4 Transistor GP007 transistor W4 sot-23

    diode wg

    Abstract: N2 SOT-23 SOT-89 N2 transistor dg sot-23 sot23 xj
    Text: Package and Die Options TO-39 N2 TO-92 (N3, L, LL) DIP Plastic (N6, P) DIP Ceramic (NC, C) Side Braze (NC) TO-220 (N5) 7-Pin TO-220 (K2) TO-243 AA (SOT-89) (N8) SOT-23 (K1) Die in Wafer Form (NW, XW) Die on adhesive tape (NJ, XJ) Die in Waffle Pack (ND, X)


    Original     		PDF O-220 O-243 OT-89) OT-23 OT-223 O-252) diode wg N2 SOT-23 SOT-89 N2 transistor dg sot-23 sot23 xj

    SOT23 W1P

    Abstract: MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323
    Text: DISCRETE SEMICONDUCTORS Marking codes RF Wideband Transistors Supersedes data of 1997 Nov 21 1999 Jul 21 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 BF547W BF747 BFC505 SOT23


    Original     		PDF BF547 BF547W BF747 BFC505 OT323 OT353 OT143 SOT23 W1P MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323

    n7 transistor

    Abstract: marking n5 amplifier N6 Amplifier marking n6 transistor amplifier marking code n6 transistor N6 marking N7 2SC1654 sot-23 Marking N5 Marking N5
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23


    Original     		PDF 2SC1654 OT-23 BL/SSSTC096 n7 transistor marking n5 amplifier N6 Amplifier marking n6 transistor amplifier marking code n6 transistor N6 marking N7 2SC1654 sot-23 Marking N5 Marking N5

    BFG540 N43

    Abstract: w1p 22 SOT23 W1P sot143 Marking code V12 "W1P" f763 SOT89 MARKING CODE marking code V3 SOT89 N5 MARKING CODE V3 marking code
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Marking codes RF Wideband Transistors 1997 Nov 22 File under Discrete Semiconductors, SC14 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE MARKING CODE


    Original     		PDF BF547 BF547W BF689K BF747 OT323 OT353 OT143 BFG540 N43 w1p 22 SOT23 W1P sot143 Marking code V12 "W1P" f763 SOT89 MARKING CODE marking code V3 SOT89 N5 MARKING CODE V3 marking code

    n13 sot 23

    Abstract: No abstract text available
    Text: HUF76113T3ST Data Sheet June 1999 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HUF76113T3ST n13 sot 23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC1654 TRANSISTOR NPN SOT–23 FEATURES  High Frequency Power Amplifier Application  Power Swithing Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SC1654

    Untitled

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23


    Original     		PDF 2SC1654 OT-23 BL/SSSTC096

    SOT23 M7

    Abstract: CX28250-23 ANT-20e pwr n14 GR-253-CORE H12 SOT23-5 F13 SOT23-5 H12 SOT23 CX28250 "o.172"
    Text: 101517A January 29, 2001 CX28250 Application Note: Board Layout for Jitter Compliance with the CX28250-23 Jitter Compliance This document outlines the techniques used to meet the jitter requirements of Bellcore GR-253CORE using standard techniques and practices.


    Original     		PDF 01517A CX28250 CX28250-23 GR-253CORE CX28250-23 GR-253-CORE ANT-20E SOT23 M7 pwr n14 H12 SOT23-5 F13 SOT23-5 H12 SOT23 CX28250 "o.172"

    4.85W

    Abstract: EL817B equivalent JNK09E102MY02N
    Text: EV110-P-00A 85VAC/60Hz~420VAC/60Hz, 13.5V/300mA;8V/50mA;8V/50mA Off-line SWITCHING Regulator Evaluation Board PRELIMINARY SPECIFICATIONS SUBJECT TO CHANGE Evaluation Board Report Triple output 4.85W ACDC power supply Design Specs Input Voltage Output 1 Output 2


    Original     		PDF EV110-P-00A 85VAC/60Hz 420VAC/60Hz, V/300mA V/50mA V/50mA 300mA MP110GPR EV110-P-00A 4.85W EL817B equivalent JNK09E102MY02N

    transistor smd 6z

    Abstract: marking r25 sot23 smd marking code sot-23 infineon smd transistor 6z code marking 6z sot-23 SOT R25 kty11-6 transistor SOT23 1126 EHA07247 R25 3 pins
    Text: Silicon Temperature Sensors KT- and KTY-Series Silicon Temperature Sensors KT110 KT130 KT210 KT230 KTY16-6 Data Sheet KTY11-x KTY13-x KTY21-x KTY23-x KTY19-6 Features • • • • • • • • Temperature dependent resistor with positive temperature coefficient


    Original     		PDF KT110 KT130 KT210 KT230 KTY16-6 KTY11-x KTY13-x KTY21-x KTY23-x KTY19-6 transistor smd 6z marking r25 sot23 smd marking code sot-23 infineon smd transistor 6z code marking 6z sot-23 SOT R25 kty11-6 transistor SOT23 1126 EHA07247 R25 3 pins

    KTY 110

    Abstract: KTY 19M KTY 10-6 KTY 11-6 smd marking 6z KT 209 kty 1000 KTY 88 marking r25 sot23 KTY 10-7
    Text: Silicon Temperature Sensors KT 100 KT 110 KT 130 KT 210 KT 230 KTY 16-6 KTY 10-x KTY 11-x KTY 13-x KTY 21-x KTY 23-x KTY 19-6 Features • • • • • • • • Temperature dependent resistor with positive temperature coefficient Temperature range – 50 °C to + 150 °C – 60 F to 300 F


    Original     		PDF OT-23 BSS303 19-6M/Z M10x1 1/8x27 GMX05639 KTY 110 KTY 19M KTY 10-6 KTY 11-6 smd marking 6z KT 209 kty 1000 KTY 88 marking r25 sot23 KTY 10-7

    smd transistor 2xX

    Abstract: smd TRANSISTOR sot-23 a2 marking r25 sot23 KTY 10-6 transistor Kty 10.6 SOT R25 smd sot-23 code marking 106 KT 100 tube KTY 19M SMD transistor 2x sot 23
    Text: Silicon Temperature Sensors KT 100 KT 110 KT 130 KT 210 KT 230 KTY 16-6 KTY 10-x KTY 11-x KTY 13-x KTY 21-x KTY 23-x KTY 19-6 Features • • • • • • • • Temperature dependent resistor with positive temperature coefficient Temperature range – 50 °C to + 150 °C – 60 F to 300 F


    Original     		PDF OT-23 BSS303 19-6M/Z M10x1 1/8x27 GMX05639 smd transistor 2xX smd TRANSISTOR sot-23 a2 marking r25 sot23 KTY 10-6 transistor Kty 10.6 SOT R25 smd sot-23 code marking 106 KT 100 tube KTY 19M SMD transistor 2x sot 23

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SC1654 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 High voltage VCEO : 160V +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain.hFE=130 typ. VCE=3.0V,IC=15mA 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1


    Original     		PDF 2SC1654 OT-23

    smd transistor marking n5

    Abstract: smd transistor n6 N5 smd transistor N5 N6 SMD Transistor MARKING SMD TRANSISTOR sot-23 Marking N5 N5 npn transistor pd smd 2SC1654 N7200
    Text: Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SC1654 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 High voltage VCEO : 160V +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain.hFE=130 typ. VCE=3.0V,IC=15mA 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1


    Original     		PDF 2SC1654 OT-23 -10mA smd transistor marking n5 smd transistor n6 N5 smd transistor N5 N6 SMD Transistor MARKING SMD TRANSISTOR sot-23 Marking N5 N5 npn transistor pd smd 2SC1654 N7200

    SOT23 W1P

    Abstract: BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 marking code V3 w1p code
    Text: Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 SOT23 BF547W BF689K SOT323 SOT54 BF747 SOT23 SOT54 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 BFG10/X BFG10W/X BFG11 BFG11/X BFG11W/X


    OCR Scan     		PDF BF547 BF547W BF689K BF747 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 SOT23 W1P BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 marking code V3 w1p code

    PXTA14

    Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
    Text: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.


    OCR Scan     		PDF OT143, OT323, OD123 OD323 BZV49 BAW56W BSR40 2PB709AR BAW56 BSR41 PXTA14 mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401

    marking 4p sot23

    Abstract: smd marking 271 Sot smd transistor marking n5
    Text: Infineon tech n o Io g i e s Silicon Temperature Sensors KT 100 KT 110 KT 130 KT 210 KT 230 KTY 1 6-6 KTY 10-x KTY 11-x KTY 13-x KTY 21-X KTY 23-x KTY 19-6 Features • • • • • • • • Temperature dependent resistor with positive temperature coefficient


    OCR Scan     		PDF OT-23 E35b05 G1342b4 GPD05638 fl23Sb05 BSS303 fl235bDS marking 4p sot23 smd marking 271 Sot smd transistor marking n5

    sot-23 Marking G1

    Abstract: marking 1U sot-23 MMBC1653N4 MMBC1654N5 N3 SOT-23 MMBC1653 MMBC1653N2 MMBC1653N3 G1 marking sot23 sot23 MARKING 1l
    Text: SURFACE MOUNT PRODUCTS — SOT 23 continued Low-Noise SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN NF dB Device MMBT5088 MMBT5089 MMBT2484 MMBT6428 MMBT6429 fT hfe Max @'C (mA) Min (MHz) Marking (Typ) Vb R(CEO) Min 1Q 1R 1U 1K 1L 1.0 1.0


    OCR Scan     		PDF OT-23 MMBT5088 MMBT5089 MMBT2484 MMBT6428 MMBT6429 MMBT5087 MMBT5086 MMBTA42 sot-23 Marking G1 marking 1U sot-23 MMBC1653N4 MMBC1654N5 N3 SOT-23 MMBC1653 MMBC1653N2 MMBC1653N3 G1 marking sot23 sot23 MARKING 1l

    pj 89 diode

    Abstract: LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89
    Text: Supertexinc. Short Form Catalog '96 High Voltage Integrated Circuits and DMOS Transistors Supertex inc. Leadership in CMOS/D MOS Technologies Supertex, Inc. designs, develops, manufactures, and markets quality semiconductor products for use in data processing, tele­


    OCR Scan     		PDF O-220 O-243 OT-89) OT-23 20-Terminal pj 89 diode LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89

    supertex mosfet p-channel TO-220

    Abstract: low threshold mosfet p-channel TO-220 p-channel lateral diffused mos N-Channel Depletion-Mode MOSFET high voltage supertex dmos
    Text: M Supertex me. Product Nomenclature / Ordering Information The Supertex DMOS MOSFET family utilizes both vertical and lateral double diffused MOS processes, featuring: High drain-to-source voltage for direct interface to the outside world. • Enhancement-mode and depletion-mode devices available.


    OCR Scan     		PDF O-220 SO-16 OT-23 O-243AA OT-89) SO-14 supertex mosfet p-channel TO-220 low threshold mosfet p-channel TO-220 p-channel lateral diffused mos N-Channel Depletion-Mode MOSFET high voltage supertex dmos

    MMBC1654N5

    Abstract: n7 transistor
    Text: MOTOROL A SC ÍXSTRS /R F} 6367254 i ^ MOTOROLA SC " \ “i DF|b3b?SSM DOflm a h f CXSTRS/R F • 9 6D 81992 I Symbol Value U nit Coiiector-Emitter Voltage VCEO 160 Vdc Collector-Base Voltage VCBO 180 Vdc Ve b o 5.0 Vcfc 1c 50 mAdc Symbol Max Unît PD 225


    OCR Scan     		PDF T-27-/S MMBC1654N5 OT-23 MMBC1654N6 MMBC1654N7 n7 transistor

    SMD CODE N8

    Abstract: n8 smd sot 23 1025 smd sensor KTY 23-5 SMD t5 MARKING t4 smd code sot-23 N6 marking sot kty s
    Text: SIEMENS Spreading Resistance Silicon Temperature Sensor KTY13 KTY23 • SMD plastic package for very small thermal time constants • Fast response • High reliability due to multilayer gold contacts • n-conducting silicon crystal • Polarity independent due to symmetrical construction


    OCR Scan     		PDF KTY13 KTY23 Q62705-K248 Q62705-K249 Q62705-K250 Q62705-K251 Q62705-K261 Q62705-K262 Q62705-K263 Q62705-K264 SMD CODE N8 n8 smd sot 23 1025 smd sensor KTY 23-5 SMD t5 MARKING t4 smd code sot-23 N6 marking sot kty s