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    N5551 TRANSISTOR Search Results

    N5551 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N5551 TRANSISTOR Datasheets Context Search

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    n5551 transistor

    Abstract: n5551 BTN5551A3 BTP5401A3
    Text: CYStech Electronics Corp. Spec. No. : C208A3 Issued Date : 2003.06.06 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTN5551A3 Description The BTN5551A3 is designed for general purpose applications requiring high breakdown voltage.


    Original     		PDF C208A3 BTN5551A3 BTN5551A3 BTP5401A3 UL94V-0 n5551 transistor n5551 BTP5401A3