N50A36 Search Results

N50A36 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: N50A36FD Insulated Gate Bipolar Transistor, IGBT 360V, 50A High Speed Punch Through IGBT Features • Low gate charge  Punch Through Technology  Low saturation voltage: VCE sat = 1.6V (@ IC = 50A, TC = 25C)  RoHS compliant product Applications	Original	PDF	SGTN50A36FD O-220F-3L N50A36 SDB20D45 O-220F 28-NOV-13

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: N50A36FD Insulated Gate Bipolar Transistor, IGBT 360V, 50A High Speed Punch Through IGBT Features • Low gate charge  Punch Through Technology  Low saturation voltage: VCE sat = 1.6V (@ IC = 50A, TC = 25C)  RoHS compliant product Applications

Original

PDF

SGTN50A36FD O-220F-3L N50A36 SDB20D45 O-220F 28-NOV-13