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    N50 FUSE Search Results

    N50 FUSE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE812NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, Fixed Over Voltage Clamp, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE812NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, Fixed Over Voltage Clamp, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE712BNL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 13.2 V, 3.65 A, Latch, Adjustable Over Voltage Protection, WSON10 Visit Toshiba Electronic Devices & Storage Corporation

    N50 FUSE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    75639G

    Abstract: 75639P 75639S HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST TB334
    Text: HUF75639G3, HUF75639P3, HUF75639S3S TM Data Sheet August 2000 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.8 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		PDF HUF75639G3, HUF75639P3, HUF75639S3S 75639G 75639P 75639S HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST TB334

    75652G

    Abstract: No abstract text available
    Text: HUFA75652G3 TM Data Sheet November 2000 File Number 4964 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE DRAIN TAB HUFA75652G3 Features • Ultra Low On-Resistance - rDS(ON) = 0.008Ω, VGS = 10V • Simulation Models


    Original     		PDF HUFA75652G3 O-247 O-247 75652G HUFA75652G3

    75631S

    Abstract: No abstract text available
    Text: HUFA75631P3, HUFA75631S3ST TM Data Sheet November 2000 File Number 4958 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUFA75631P3 HUFA75631S3ST


    Original     		PDF HUFA75631P3, HUFA75631S3ST O-220AB O-263AB HUFA75631P3 O-220AB 75631P 75631S

    75852g

    Abstract: No abstract text available
    Text: HUFA75852G3 TM Data Sheet November 2000 File Number 4969 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-247 Features SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.016Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER


    Original     		PDF HUFA75852G3 O-247 75852G HUFA75852G3 75852g

    75321p

    Abstract: No abstract text available
    Text: HUFA75321P3, HUFA75321S3S TM Data Sheet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUFA75321P3, HUFA75321S3S 75321p

    Untitled

    Abstract: No abstract text available
    Text: HUFA75829D3, HUFA75829D3S TM Data Sheet November 2000 File Number 4966 18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA75829D3S HUFA75829D3


    Original     		PDF HUFA75829D3, HUFA75829D3S O-251AA O-252AA HUFA75829D3 O-252AA 75829D

    Untitled

    Abstract: No abstract text available
    Text: HUFA75329D3, HUFA75329D3S TM Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUFA75329D3, HUFA75329D3S

    N2357

    Abstract: No abstract text available
    Text: ISL9N2357D3ST TM Data Sheet October 2000 30V, 0.007 Ohm, 20A, N-Channel DenseTrench Power MOSFET File Number 4929 DenseTrench™ DenseTrench from Intersil is a new advanced MOSFET technology that achieves the lowest possible on-resistance per silicon area while maintaining fast switching and low gate


    Original     		PDF ISL9N2357D3ST 5600pF ISL9N2357D3ST O-252for N2357

    75652G

    Abstract: AN7254 AN7260 AN9321 AN9322 HUF75652 HUF75652G3 TB334
    Text: HUF75652G3 Data Sheet October 1999 File Number 4746.1 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.008Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		PDF HUF75652G3 O-247 75652G 75652G AN7254 AN7260 AN9321 AN9322 HUF75652 HUF75652G3 TB334

    65e9

    Abstract: irfp150n IRFP150N equivalent AN7254 AN7260 AN9321 AN9322 TB334
    Text: IRFP150N TM Data Sheet March 2000 File Number 4844 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		PDF IRFP150N O-247 65e9 irfp150n IRFP150N equivalent AN7254 AN7260 AN9321 AN9322 TB334

    65e9

    Abstract: 75637s TB334 AN9321 AN9322 HUF75637P3 HUF75637S3S HUF75637S3ST 75637P 156E-9
    Text: HUF75637P3, HUF75637S3S Data Sheet October 1999 File Number 4721.1 44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) • Ultra Low On-Resistance


    Original     		PDF HUF75637P3, HUF75637S3S O-220AB O-263AB HUF75637P3 75637P 65e9 75637s TB334 AN9321 AN9322 HUF75637P3 HUF75637S3S HUF75637S3ST 75637P 156E-9

    HUFA75623P3

    Abstract: 18E6
    Text: HUFA75623P3, HUFA75623S3ST TM Data Sheet November 2000 File Number 4957 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUFA75623P3 HUFA75623S3ST


    Original     		PDF HUFA75623P3, HUFA75623S3ST O-220AB O-263AB HUFA75623P3 O-220AB O-263AB 75623P 75623S HUFA75623P3 18E6

    75344G

    Abstract: No abstract text available
    Text: HUFA75344G3, HUFA75344P3, HUFA75344S3S TM Data Sheet November 2000 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUFA75344G3, HUFA75344P3, HUFA75344S3S 75344G

    Untitled

    Abstract: No abstract text available
    Text: HUF75842P3, HUF75842S3S Data Sheet December 1999 File Number 4815 43A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) • Ultra Low On-Resistance


    Original     		PDF HUF75842P3, HUF75842S3S O-220AB O-263AB HUF75842P3 75842P

    75842P

    Abstract: No abstract text available
    Text: HUF75842P3, HUF75842S3S TM Data Sheet December 2000 File Number 4815.1 43A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF75842P3 HUF75842S3S


    Original     		PDF HUF75842P3, HUF75842S3S O-220AB O-263AB HUF75842P3 75842P 75842P

    HUF75623P3

    Abstract: 929E-10 75623P AN7254 AN7260 AN9321 AN9322 TB334
    Text: HUF75623P3 Data Sheet November 1999 File Number 4804 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE HUF75623P3 • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models


    Original     		PDF HUF75623P3 O-220AB 75623P HUF75623P3 929E-10 75623P AN7254 AN7260 AN9321 AN9322 TB334

    LA 47201

    Abstract: 75631P AN7254 AN7260 AN9321 AN9322 HUF75631P3 HUF75631T TB334
    Text: HUF75631P3 Data Sheet October 1999 File Number 4720.1 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE HUF75631P3 • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models


    Original     		PDF HUF75631P3 O-220AB 75631P LA 47201 75631P AN7254 AN7260 AN9321 AN9322 HUF75631P3 HUF75631T TB334

    75542p

    Abstract: No abstract text available
    Text: HUFA75542P3, HUFA75542S3S TM Data Sheet November 2000 File Number 4954 75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS ON = 0.014Ω, VGS = 10V GATE


    Original     		PDF HUFA75542P3, HUFA75542S3S O-220AB O-263AB HUFA75542P3 O-220AB O-263AB 75542P

    90e7

    Abstract: 89E-10 27e5
    Text: HUFA75823D3, HUFA75823D3S TM Data Sheet November 2000 File Number 4965 14A, 150V, 0.150 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA75823D3S HUFA75823D3 Features


    Original     		PDF HUFA75823D3, HUFA75823D3S O-251AA O-252AA HUFA75823D3 HUFA75823D3 O-252AA 75823D 90e7 89E-10 27e5

    mosfet 75645p

    Abstract: 75645p mosfet 75645p mosfet 75645s HUFA75645
    Text: HUFA75645P3, HUFA75645S3S TM Data Sheet November 2000 File Number 4963 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA75645P3 HUFA75645S3S


    Original     		PDF HUFA75645P3, HUFA75645S3S O-220AB O-263AB HUFA75645P3 O-220AB O-263AB 75645P 75645S mosfet 75645p mosfet 75645p mosfet HUFA75645

    LA 47201

    Abstract: 75631P AN9321 AN9322 HUF75631P3 TB334
    Text: HUF75631P3 interdi Data Sheet O cto b e r 1999 F ile N um ber 4720.1 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TQ-220AB • Ultra Low On-Resistance - rDS ON = 0.040£2, VGS = 10V SOURCE • Simulation Models - Temperature Compensated PSPICE and SABER®


    OCR Scan     		PDF HUF75631P3 O-220AB HUF75631P3 O-220AB 75631P 10ements 43D2271 LA 47201 75631P AN9321 AN9322 TB334

    HUF75623P3

    Abstract: AN9321 AN9322 TB334
    Text: HUF75623P3 in terrii N o vem ber 1999 D ata S h eet File N u m b er 4804 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB • Ultra Low On-Resistance ‘ SOURCE r DS ON = 0 .0 6 4 i2 , VGS = 1 0 V • Simulation Models


    OCR Scan     		PDF HUF75623P3 O-220AB HUF75623P3 O-220AB 75623P AN9321 AN9322 TB334

    65e9

    Abstract: 75637S 75637P 310E3 n72 m HUF75637P3 HUF75637S3S HUF75637S3ST TB334 tci model 510
    Text: i n t e f s HUF75637P3, HUF75637S3S i l D a ta S h e e t O c t o b e r 199 9 F ile N u m b e r 472 1.1 44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JED E C TO -220AB JEDEC TO-263AB SOURCE DRAIN FLANGE • Ultra Low On-Resistance


    OCR Scan     		PDF O-220AB O-263AB HUF75637P3 HUF75637S3S HUF75637P3, HUF75637P3 O-220AB 75637P HUF75637S3S 65e9 75637S 75637P 310E3 n72 m HUF75637S3ST TB334 tci model 510

    AN7254

    Abstract: AN7260 AN9321 AN9322 HUF76413P3 TB334 76413P RVTHRES228 7175-T
    Text: HUF76413P3 interrii Data Sheet November 1999 File Num ber 4723.1 22A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features • Ultra Low On-Resistance JEDEC TO-220AB ‘ rDS ON = 0.049i2, VGS = 10V SOURCE ‘ rDS(ON) = 0.056i2, VGS = 5V


    OCR Scan     		PDF O-220AB HUF76413P3 HUF76413P3 O-220AB 76413P HUF76413P3. AN7254 AN7260 AN9321 AN9322 TB334 76413P RVTHRES228 7175-T