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    N5 TRANSISTOR Search Results

    N5 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N5 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DRCF143E

    Abstract: No abstract text available
    Text: DRCF143E Tentative Total pages page DRCF143E Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N5 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


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    DRCF143E DRCF143E PDF

    Untitled

    Abstract: No abstract text available
    Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9BN5 Microcontroller D ATA SHE E T D S -LM 3S 9B N5 - 9 9 7 0 C opyri ght 200 7-2011 Texas Instruments Incorporated Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments


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    se617

    Abstract: vhdl code for 74192 UPD65891 a1387 transistor F495 transistor f422 equivalent tt 2246 Transistor TT 2246 transistor f422 UPD65883
    Text: Design Manual CMOS-N5 Series CMOS Gate Array Ver. 7.0 Document No. A13826EJ7V0DM00 7th edition Date Published March 2004 N CP(K) c Printed in Japan [MEMO] 2 Design Manual A13826EJ7V0DM NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the


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    A13826EJ7V0DM00 A13826EJ7V0DM se617 vhdl code for 74192 UPD65891 a1387 transistor F495 transistor f422 equivalent tt 2246 Transistor TT 2246 transistor f422 UPD65883 PDF

    RS468

    Abstract: transistor dg sot-23 BENT LEAD transistor TO-92 Outline Dimensions P005 n7 transistor P012 B W4 Transistor GP007 transistor W4 sot-23
    Text: Package Options TO-39 N2, B TO-52 (N9) TO-92 (N3, L, LL) DIP Plastic (N4, N6, NA, J, P) DIP Ceramic (NC, N7, P, C) Side Braze (NC, N7) TO-220 (N5) 7-Pin TO-220 (K2) TO-243 AA (SOT-89) (N8) SOT-23 (K1) TO-3 (N1) Die in Wafer Form (NW, XW) Die on adhesive


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    O-220 O-243 OT-89) OT-23 RS468 transistor dg sot-23 BENT LEAD transistor TO-92 Outline Dimensions P005 n7 transistor P012 B W4 Transistor GP007 transistor W4 sot-23 PDF

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    Abstract: No abstract text available
    Text: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9BN5 Microcontroller D ATA SHE E T D S -LM3S 9B N5 - 1 3 4 4 2 . 2 5 4 9 S P M S 213B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated


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    Abstract: No abstract text available
    Text: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9BN5 Microcontroller D ATA SHE E T D S -LM3S 9B N5 - 1 3 4 4 2 . 2 5 4 9 S P M S 213B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated


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    Untitled

    Abstract: No abstract text available
    Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9BN5 Microcontroller D ATA SHE E T D S -LM3S 9B N5 - 11 4 2 5 C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments


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    IC1340

    Abstract: No abstract text available
    Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9BN5 Microcontroller D ATA SHE E T D S -LM3S 9B N5 - 11 4 2 5 C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments


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    Untitled

    Abstract: No abstract text available
    Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9BN5 Microcontroller D ATA SHE E T D S -LM3S 9B N5 - 1 5 8 5 2 . 2 7 4 3 S P M S 213C C o p yri g h t 2 0 07-2014 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2014 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments


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    Abstract: No abstract text available
    Text: DDTC114ELP PRE-BIASED R1 = R2 SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ultra-Small Leadless Surface Mount Package Ideally Suited for Automated Assembly Processes


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    DDTC114ELP 100mA AEC-Q101 DDTC114ELP DFN1006-3 J-STD-020 MIL-STD-202, DS30945 621-DDTC114ELP-7 PDF

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    Abstract: No abstract text available
    Text: DDTC114ELP PRE-BIASED R1 = R2 SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ultra-Small Leadless Surface Mount Package Ideally Suited for Automated Assembly Processes


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    DDTC114ELP 100mA AEC-Q101 DFN1006-3 J-STD-020 MIL-STD-202, DS30945 PDF

    n7 transistor

    Abstract: marking n5 amplifier N6 Amplifier marking n6 transistor amplifier marking code n6 transistor N6 marking N7 2SC1654 sot-23 Marking N5 Marking N5
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23


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    2SC1654 OT-23 BL/SSSTC096 n7 transistor marking n5 amplifier N6 Amplifier marking n6 transistor amplifier marking code n6 transistor N6 marking N7 2SC1654 sot-23 Marking N5 Marking N5 PDF

    BFG540 N43

    Abstract: w1p 22 SOT23 W1P sot143 Marking code V12 "W1P" f763 SOT89 MARKING CODE marking code V3 SOT89 N5 MARKING CODE V3 marking code
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Marking codes RF Wideband Transistors 1997 Nov 22 File under Discrete Semiconductors, SC14 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE MARKING CODE


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    BF547 BF547W BF689K BF747 OT323 OT353 OT143 BFG540 N43 w1p 22 SOT23 W1P sot143 Marking code V12 "W1P" f763 SOT89 MARKING CODE marking code V3 SOT89 N5 MARKING CODE V3 marking code PDF

    marking CODE n5

    Abstract: 035nm ipc-SM-782 DDTC114ELP DDTC114ELP-7 DFN1006-3
    Text: DDTC114ELP PRE-BIASED R1 = R2 SMALL SIGNALSURFACE MOUNT 100mA NPN TRANSISTOR NEW PRODUCT Features • • • • • Epitaxial Planar Die Construction Ultra-Small Leadless Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1)


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    DDTC114ELP 100mA DFN1006-3 J-STD-020C MIL-STD-202, DS30945 marking CODE n5 035nm ipc-SM-782 DDTC114ELP DDTC114ELP-7 DFN1006-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23


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    2SC1654 OT-23 BL/SSSTC096 PDF

    DN2535

    Abstract: DN2535N3-G DN2535N5 DN2535N5-G 125OC H1 SOT-89
    Text: DN2535 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The Supertex DN2535 is a low threshold depletion mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate


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    DN2535 DN2535 O-220, DSFP-DN2535 A100907 DN2535N3-G DN2535N5 DN2535N5-G 125OC H1 SOT-89 PDF

    marking DN

    Abstract: DN2535
    Text: DN2535 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The Supertex DN2535 is a low threshold depletion mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate


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    DN2535 O-220, DSFP-DN2535 A100907 marking DN PDF

    Untitled

    Abstract: No abstract text available
    Text: DN500F NPN Silicon Transistor PIN Connection Description • Extremely low collector-to-emitter saturation voltage VCE(SAT =0.2V Typ. @IC/IB=3A/150 ㎃) • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with DP500F


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    DN500F A/150 DP500F OT-89 KSD-T5B002-000 PDF

    bsc 68e

    Abstract: 2N5684 motorola 2N5685 MOTOROLA 2N5686 2N5684 2N5685 3015 hj N5685 J5685 PNP 2N5684
    Text: MOTOROLA O rder this docum ent by 2N5684/D SEMICONDUCTOR TECHNICAL DATA PNP 2 N 56 84 High-C urrent Com plem entary Silicon Power Transistors NPN 2 N 56 85 . . . designed for use in high-pow er amplifier and switching circuit applications. • • • 2 N5 6 8 6 *


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    2N5684/D 2N5685 2N5684 2N5686 2N5686 97A-05 O-204AE bsc 68e 2N5684 motorola 2N5685 MOTOROLA 3015 hj N5685 J5685 PNP 2N5684 PDF

    FCX2369

    Abstract: FCX2369A
    Text: FCX2369A FCX2369 SOT89 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR FEATU RES T h e se d evice s are suitable for use in h ig h speed, lo w current sw itc h in g applications. P A R T M A R K IN G D E T A IL S - N4 FCX2369A - FCX2369 N5 ABSOLUTE M A X IM U M RATINGS


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    FCX2369A FCX2369 FCX2369 100mA, PDF

    2N5653

    Abstract: 2N5654
    Text: Sehnvunductor Corp. ♦I Central Sem iconductor Corp. Central Semiconductor Corp. 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 2 N5 653 s e r i e s designed fo r sw itchin g a p p lic a t io n s . MAXIMUM R A T I N G S


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    2N5653 2N5654 T0-92 2N5654 PDF

    B938A

    Abstract: B939A 2SK1967 2SD1316
    Text: N Type Package h Transistors Outline U n it I mm 6.7max 3.7max 6 5max ,1.1 ma» mm. m N5Ü' 'f "j 'T - v U s « S <D7V> h £454' ä IZ m & m à 7 1 0 - 220« ^ « ^ li lJj j J 7 7 f 7 ^ ' ^ - v T ' î o • f t fi5i.8.4 S r I ; -Ö- 08±0, RO.S/^i ! I R 0.5


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    O-220 2SK1967- 2SK782- 2SK1308/A- 2SK1846- B938A B939A 2SK1967 2SD1316 PDF

    SOT23 W1P

    Abstract: BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 marking code V3 w1p code
    Text: Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 SOT23 BF547W BF689K SOT323 SOT54 BF747 SOT23 SOT54 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 BFG10/X BFG10W/X BFG11 BFG11/X BFG11W/X


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    BF547 BF547W BF689K BF747 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 SOT23 W1P BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 marking code V3 w1p code PDF

    30L SOT-23

    Abstract: 2SD1628G MA721 RB111C RN5RK301A RN5RK301B
    Text: V M F S TE P -U P D C /DC C O N V E R TE R RN5RKXX1 A / x x 1 B/XX2A SERIES OUTLINE The RN5RKXX1A/ XXlB/ XX2A Series are VFM Chopper Step-up DC/ DC converter ICs with ultra low supply current and high output voltage accuracy by CMOS process. The RN5RKXX1A/ XXlB consist of an oscillator, a VFM control circuit, a driver transistor to have low ON resistance (Lx


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    RN5RK302A OT-23-5 30L SOT-23 2SD1628G MA721 RB111C RN5RK301A RN5RK301B PDF