DRCF123J
Abstract: drcf123
Text: DRCF123J Tentative Total pages page DRCF123J Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N4 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRCF123J
DRCF123J
drcf123
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DRCF114Y
Abstract: No abstract text available
Text: DRCF114Y Tentative Total pages page DRCF114Y Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NC Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRCF114Y
DRCF114Y
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DRCF143E
Abstract: No abstract text available
Text: DRCF143E Tentative Total pages page DRCF143E Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N5 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRCF143E
DRCF143E
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DRAF124E
Abstract: No abstract text available
Text: DRAF124E Tentative Total pages page DRAF124E Silicon PNP epitaxial planar type For digital circuits Marking Symbol : LE Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRAF124E
DRAF124E
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DRAF114Y
Abstract: No abstract text available
Text: DRAF114Y Tentative Total pages page DRAF114Y Silicon PNP epitaxial planar type For digital circuits Marking Symbol : LC Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRAF114Y
DRAF114Y
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DRCF144E
Abstract: No abstract text available
Text: DRCF144E Tentative Total pages page DRCF144E Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NL Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRCF144E
DRCF144E
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DSCF001
Abstract: No abstract text available
Text: Tentative DSCF001 Total pages page DSCF001 Silicon NPN epitaxial planar type For general amplification Marking Symbol : C1 Package Code : ML3-N4-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DSCF001
DSCF001
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DRCF114W
Abstract: No abstract text available
Text: DRCF114W Tentative Total pages page DRCF114W Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N9 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRCF114W
DRCF114W
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DRCF113Z
Abstract: No abstract text available
Text: DRCF113Z Tentative Total pages page DRCF113Z Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N1 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRCF113Z
DRCF113Z
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DSAFG01
Abstract: No abstract text available
Text: DSAFG01 Tentative page Total pages DSAFG01 Silicon PNP epitaxial planar type For High-frequency Amplifier Marking Symbol A4 Package Code : ML3-N4-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DSAFG01
DSAFG01
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DRAF143E
Abstract: No abstract text available
Text: DRAF143E Tentative Total pages page DRAF143E Silicon PNP epitaxial planar type For digital circuits Marking Symbol : L5 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRAF143E
DRAF143E
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DRCF143T
Abstract: No abstract text available
Text: DRCF143T Tentative Total pages page DRCF143T Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NA Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRCF143T
DRCF143T
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DRCF114E
Abstract: drcf114
Text: DRCF114E Tentative Total pages page DRCF114E Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NB Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRCF114E
DRCF114E
drcf114
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DRAF143Z
Abstract: No abstract text available
Text: DRAF143Z Tentative Total pages page DRAF143Z Silicon PNP epitaxial planar type For digital circuits Marking Symbol : L8 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRAF143Z
DRAF143Z
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DRAF123J
Abstract: draf123
Text: DRAF123J Tentative Total pages page DRAF123J Silicon PNP epitaxial planar type For digital circuits Marking Symbol : L4 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRAF123J
DRAF123J
draf123
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DRAF143T
Abstract: No abstract text available
Text: DRAF143T Tentative Total pages page DRAF143T Silicon PNP epitaxial planar type For digital circuits Marking Symbol : LA Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRAF143T
DRAF143T
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DRCF124E
Abstract: No abstract text available
Text: DRCF124E Tentative Total pages page DRCF124E Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NE Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRCF124E
DRCF124E
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DRAF144E
Abstract: No abstract text available
Text: DRAF144E Tentative Total pages page DRAF144E Silicon PNP epitaxial planar type For digital circuits Marking Symbol : LL Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRAF144E
DRAF144E
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DRCF152Z
Abstract: No abstract text available
Text: DRCF152Z Tentative Total pages page DRCF152Z Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N0 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRCF152Z
DRCF152Z
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V 904 RL 805
Abstract: BFG520W N4 TAM transistor fp 1016 DIN45004B
Text: Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFG520W BFG520W/X; BFG520W/XR MARKING • High power gain TYPE NUMBER • Low noise figure BFG520W N3 • High transition frequency BFG520W/X N4 • Gold metallization ensures
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BFG520W
BFG520W/X;
BFG520W/XR
OT343
OT343R
BFG520W/X
BFG520W/XR
7110fli
V 904 RL 805
N4 TAM
transistor fp 1016
DIN45004B
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4844 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4844 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. NF = 1.8dB, |S2iel2= 9.5dB f=2GHz 2.1 ± 0.1 1.25 ± 0.1 n4 MAXIMUM RATINGS (Ta = 25°C)
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2SC4844
--J50
-j250
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equivalent transistor TT 3043
Abstract: transistor TT 3043 transistor BI 342 905 LT312 MRC005 RF NPN POWER TRANSISTOR C 10-12 GHZ k a 431 transistor Transistor BF 479 BFR540 BTS 308
Text: Philips Semiconductors • 7 1 1 0 fl2 tj □0bT305 7bT B iP H IN Productspecification NPN 9 GHz wideband transistor BFS540 PINNING FEATURES PIN CONFIGURATION DESCRIPTION PIN • High power gain Code: N4 • Low noise figure • High transition frequency 1
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7110fl2tj
BFS540
OT323
MBC370
OT323.
emitte-176
equivalent transistor TT 3043
transistor TT 3043
transistor BI 342 905
LT312
MRC005
RF NPN POWER TRANSISTOR C 10-12 GHZ
k a 431 transistor
Transistor BF 479
BFR540
BTS 308
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TLP721
Abstract: TLP721F 11-5B2 E67349 VDE0884 74285
Text: TOSHIBA TLP721 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP721 OFFICE MACHINE HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY SWITCHING POWER SUPPLY "n4 n33 The TOSHIBA TLP721 consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic
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TLP721
TLP721
UL1577
EN60065
EN60950
EN4330784
E67349
E152349
TLP721F
11-5B2
E67349
VDE0884
74285
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iw 1688
Abstract: 7812 philips 227 1112 2t6 551 BFR540 BFS540 UBC870 TRANSISTOR D 1765 738 transistor BF 697 Transistor MJE 5331
Text: Philips Semiconductors 0 0 3 2 0 b ti 5^7 • APX Product specification NPN 9 GHz wideband transistor BFS540 N AUER PHILIPS/DISCRETE FEATURES b^E » 1 PIN CONFIGURATION PIN • High power gain DESCRIPTION Code: N4 • Low noise figure • High transition frequency
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OCR Scan
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GG350bfci
BFS540
OT323
UBC870
OT323.
collect-176
iw 1688
7812 philips
227 1112
2t6 551
BFR540
BFS540
UBC870
TRANSISTOR D 1765 738
transistor BF 697
Transistor MJE 5331
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