marking n4
Abstract: KRC417E N4 MARKING
Text: SEMICONDUCTOR KRC417E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking N4 No. Item Marking 1 Device Mark N4 KRC417E 2 hFE Grade - - 00.12.27 Revision No : 00 Description 1/1
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KRC417E
marking n4
KRC417E
N4 MARKING
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DRCF123J
Abstract: drcf123
Text: DRCF123J Tentative Total pages page DRCF123J Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N4 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRCF123J
DRCF123J
drcf123
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marking n4
Abstract: KRC867E N413 N4 MARKING
Text: SEMICONDUCTOR KRC867E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking N4 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark N4 KRC867E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRC867E
marking n4
KRC867E
N413
N4 MARKING
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marking n4
Abstract: KRC867U N4 MARKING
Text: SEMICONDUCTOR KRC867U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking N4 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark N4 KRC867U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRC867U
marking n4
KRC867U
N4 MARKING
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N4 SOT23
Abstract: N4 marking KRC117S marking n4 N4 SOT-23
Text: SEMICONDUCTOR KRC117S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking N4 No. 1 Item Marking Device Mark N4 KRC117S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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KRC117S
OT-23
N4 SOT23
N4 marking
KRC117S
marking n4
N4 SOT-23
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KRC667U
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC667U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking 2. Marking 3 No. 0 1 N4 1 2 Item Marking Description Device Mark N4 KRC667U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs
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KRC667U
KRC667U
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KRC417
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC417 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 N4 1 2 Item Marking Description Device Mark N4 KRC417 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KRC417
KRC417
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marking n4
Abstract: KRC667E N413
Text: SEMICONDUCTOR KRC667E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking N4 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark N4 KRC667E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRC667E
marking n4
KRC667E
N413
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DZ36068D
Abstract: DZ36
Text: Tentative DZ36068D Total pages page DZ36068D Silicon epitaxial planar type For surge absorption circuit Marking Symbol : 02 Package Code: ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Total power dissipation Junction temperature
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DZ36068D
DZ36068D
DZ36
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UL-510
Abstract: SOCRATES UL510 22622 epcos 230 08 AM113 E17385 PEB 22622 PEB22622 PEB 22622 SOCRATES
Text: EP13 Interfacetransform for Socrates PEB 22622, 24622 13.02.2004 Preliminary Datasheet Ordering Code: Dimensions [mm]: Schematics: 5 T0127/54/01 B78421A1801A003 7 N1 LineSide 2 4 N3 1 9 6 N4 10 ChipSide N2 SenseWinding Marking: EPCOS middle block date code
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T0127/54/01
B78421A1801A003
UL-510
SOCRATES
UL510
22622
epcos 230 08
AM113
E17385
PEB 22622
PEB22622
PEB 22622 SOCRATES
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DRCF114Y
Abstract: No abstract text available
Text: DRCF114Y Tentative Total pages page DRCF114Y Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NC Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRCF114Y
DRCF114Y
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DRCF143E
Abstract: No abstract text available
Text: DRCF143E Tentative Total pages page DRCF143E Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N5 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRCF143E
DRCF143E
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DRAF124E
Abstract: No abstract text available
Text: DRAF124E Tentative Total pages page DRAF124E Silicon PNP epitaxial planar type For digital circuits Marking Symbol : LE Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRAF124E
DRAF124E
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DA36103E
Abstract: da361
Text: DA36103E Tentative Total pages page DA36103E Silicon epitaxial planar type For high speed switching Marking Symbol : 24 Package Code : ML3-N4-B Absolute Maximum Ratings Ta = 25 °C Parameter Reverse voltage Maximum peak reverse voltage Forward current Peak forward current
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DA36103E
DA36103E
da361
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DRCF144E
Abstract: No abstract text available
Text: DRCF144E Tentative Total pages page DRCF144E Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NL Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRCF144E
DRCF144E
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DSCF001
Abstract: No abstract text available
Text: Tentative DSCF001 Total pages page DSCF001 Silicon NPN epitaxial planar type For general amplification Marking Symbol : C1 Package Code : ML3-N4-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DSCF001
DSCF001
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DRCF114W
Abstract: No abstract text available
Text: DRCF114W Tentative Total pages page DRCF114W Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N9 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRCF114W
DRCF114W
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DRCF113Z
Abstract: No abstract text available
Text: DRCF113Z Tentative Total pages page DRCF113Z Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N1 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRCF113Z
DRCF113Z
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DSAFG01
Abstract: No abstract text available
Text: DSAFG01 Tentative page Total pages DSAFG01 Silicon PNP epitaxial planar type For High-frequency Amplifier Marking Symbol A4 Package Code : ML3-N4-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DSAFG01
DSAFG01
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DRAF143E
Abstract: No abstract text available
Text: DRAF143E Tentative Total pages page DRAF143E Silicon PNP epitaxial planar type For digital circuits Marking Symbol : L5 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRAF143E
DRAF143E
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DRCF143T
Abstract: No abstract text available
Text: DRCF143T Tentative Total pages page DRCF143T Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NA Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRCF143T
DRCF143T
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DRCF114E
Abstract: drcf114
Text: DRCF114E Tentative Total pages page DRCF114E Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NB Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRCF114E
DRCF114E
drcf114
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DRAF143Z
Abstract: No abstract text available
Text: DRAF143Z Tentative Total pages page DRAF143Z Silicon PNP epitaxial planar type For digital circuits Marking Symbol : L8 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRAF143Z
DRAF143Z
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V 904 RL 805
Abstract: BFG520W N4 TAM transistor fp 1016 DIN45004B
Text: Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFG520W BFG520W/X; BFG520W/XR MARKING • High power gain TYPE NUMBER • Low noise figure BFG520W N3 • High transition frequency BFG520W/X N4 • Gold metallization ensures
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BFG520W
BFG520W/X;
BFG520W/XR
OT343
OT343R
BFG520W/X
BFG520W/XR
7110fli
V 904 RL 805
N4 TAM
transistor fp 1016
DIN45004B
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