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    HN3C09F

    Abstract: No abstract text available
    Text: TOSHIBA N3C09F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C09F Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • + 0.2 Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) SYMBOL v CBO


    OCR Scan     		PDF HN3C09F N3C09F HN3C09F

    transistor marking c3n

    Abstract: No abstract text available
    Text: TOSHIBA N3C09F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C09F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Em itter Voltage


    OCR Scan     		PDF HN3C09F N3C09F transistor marking c3n

    HN3C09F

    Abstract: No abstract text available
    Text: TOSHIBA N3C09F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C09F Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • + 0.2 Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) SYMBOL v CBO


    OCR Scan     		PDF HN3C09F N3C09F HN3C09F