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    N38 TRANSISTOR Search Results

    N38 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N38 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SOT23 W1P

    Abstract: MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323
    Text: DISCRETE SEMICONDUCTORS Marking codes RF Wideband Transistors Supersedes data of 1997 Nov 21 1999 Jul 21 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 BF547W BF747 BFC505 SOT23


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    BF547 BF547W BF747 BFC505 OT323 OT353 OT143 SOT23 W1P MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323 PDF

    n20 ic protector

    Abstract: ICP-N10 ICP-N15 ICP-N38 ICP-N25 ICP-N50 ICP-N20 N38 transistor ICP-N5 T104
    Text: IC protector Transistors Circuit protection elements !Circuit protection elements Rohm’s circuit protectors have a very reliable current cut-off capability that protects ICs and their circuits from accidental short circuit loads. Whether operated in AC or DC circuits, these circuit protectors have a very low internal resistance in


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    E107856) ICP-N10/N15/N20/N25/N38/N50/N70 n20 ic protector ICP-N10 ICP-N15 ICP-N38 ICP-N25 ICP-N50 ICP-N20 N38 transistor ICP-N5 T104 PDF

    BFG540 N43

    Abstract: w1p 22 SOT23 W1P sot143 Marking code V12 "W1P" f763 SOT89 MARKING CODE marking code V3 SOT89 N5 MARKING CODE V3 marking code
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Marking codes RF Wideband Transistors 1997 Nov 22 File under Discrete Semiconductors, SC14 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE MARKING CODE


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    BF547 BF547W BF689K BF747 OT323 OT353 OT143 BFG540 N43 w1p 22 SOT23 W1P sot143 Marking code V12 "W1P" f763 SOT89 MARKING CODE marking code V3 SOT89 N5 MARKING CODE V3 marking code PDF

    n37 transistor

    Abstract: EL2075 EL4083 n38 transistor n34 transistor VFI15 VFI13 EL2082 EL4083CN EL4083CS
    Text: EL4083 CT ODU ENT E PR PLACEM r at T E L E O R S e B D C nte /tsc O NDE port MME ical Sup ersil.com O C E n t h w.in NO R oData r Tec oSheet r ww ct u conta -INTERSIL 1-888 December 1995, Rev. B FN7157 Current Mode Four Quadrant Multiplier Features The EL4083 makes use of an Elantec


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    EL4083 FN7157 EL4083 n37 transistor EL2075 n38 transistor n34 transistor VFI15 VFI13 EL2082 EL4083CN EL4083CS PDF

    current conveyors

    Abstract: 100 N31 transistor 2e17 n37 transistor 100 n37 three pin
    Text: EL4083C EL4083C Current Mode Four Quadrant Multiplier Features General Description  Novel current mode design Virtual ground current summing inputs Differential ground referenced current outputs  High speed both inputs 200 MHz bandwidth 12 ns 1% settling time


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    EL4083C 4083C current conveyors 100 N31 transistor 2e17 n37 transistor 100 n37 three pin PDF

    n37 transistor

    Abstract: N38 transistor NPN N43 fi-14 current conveyors EL4083 EL4083C EL4083CN N39 transistor QCX0002
    Text: EL4083C EL4083C Current Mode Four Quadrant Multiplier Features General Description  Novel current mode design Virtual ground current summing inputs Differential ground referenced current outputs  High speed both inputs 200 MHz bandwidth 12 ns 1% settling time


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    EL4083C 4083C n37 transistor N38 transistor NPN N43 fi-14 current conveyors EL4083 EL4083C EL4083CN N39 transistor QCX0002 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it


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    ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA ZXTN2038FTC D-81541 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG590; BFG590/X; BFG590/XR NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 19 Philips Semiconductors Product specification BFG590; BFG590/X;


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    BFG590; BFG590/X; BFG590/XR PDF

    TS16949

    Abstract: ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F N38 transistor 443-813
    Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it


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    ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA D-81541 TS16949 ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F N38 transistor 443-813 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it


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    ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA D-81541 PDF

    N38 transistor

    Abstract: philips MATV amplifiers BFG590
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D071 BFG590; BFG590/X NPN 5 GHz wideband transistors Product specification Supersedes data of 1995 Sep 19 1998 Oct 02 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X


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    M3D071 BFG590; BFG590/X BFG590 SCA60 125104/00/03/pp12 N38 transistor philips MATV amplifiers BFG590 PDF

    inverter omron 3G3jV

    Abstract: inverter omron 3G3EV 3G3JV-AB004 3G3JV-AB007 inverter omron 3G3jV-a4022 OMRON 3G3JV 3G3JV-A2015 transistor A2022 catalog inverter omron 3G3EV 3G3JV-A2007
    Text: Cat.No. I905–E1–2 SYSDRIVE 3G3JV Series CATALOG Nomenclature Panel Top protection cover: Remove this cover when wiring the upper terminal block. Upper terminal block: A terminal block on the input side of the main circuit. Digital Operator: Used to set parameters, perform various


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    3G3JV-A2001 3G3JV-A2002 3G3JV-A2004 3G3JV-A2007 3G3JV-A2015 3G3JV-A2022 3G3JV-A2037 3G3JV-AB001 3G3JV-AB002 3G3JV-AB004 inverter omron 3G3jV inverter omron 3G3EV 3G3JV-AB004 3G3JV-AB007 inverter omron 3G3jV-a4022 OMRON 3G3JV 3G3JV-A2015 transistor A2022 catalog inverter omron 3G3EV 3G3JV-A2007 PDF

    SL 100 NPN Transistor

    Abstract: n38 transistor 100 n38 transistor base pin 4 pin dual-emitter SL 100 NPN Transistor base emitter collector BFG590 RF TRANSISTOR 2.5 GHZ s parameter sot143r transistor
    Text: Philips Semiconductors Product specification BFG590; BFG590/X; BFG590/XR NPN 5 GHz wideband transistor FEATURES MARKING • High power gain TYPE NUMBER • Low noise figure BFG590 N38 • High transition frequency BFG590/X N44 • Gold metallization ensures


    OCR Scan
    BFG590; BFG590/X; BFG590/XR OT143 OT143R BFG590 BFG590/X BFG590/XR BFG590 711DflSb SL 100 NPN Transistor n38 transistor 100 n38 transistor base pin 4 pin dual-emitter SL 100 NPN Transistor base emitter collector RF TRANSISTOR 2.5 GHZ s parameter sot143r transistor PDF

    n38 transistor

    Abstract: gg3m BFG590 philips MATV amplifiers
    Text: PhjjjP^ jJjjÇonductors _ bfc.53^31 OÜ314b4 45D HIAPX NPN 8 GHz wideband transistor ^ BFG590; BFG590/X; BFG590/XR N APIER PHILIPS/DISCRETE blE »• PINNING FEATURES DESCRIPTION PIN • High power gain BFG590 Fig.1 Code: N38 • Low noise figure • High transition frequency


    OCR Scan
    BFG590; BFG590/X; BFG590/XR BFG590 OT143 BFG590 0Q314bS n38 transistor gg3m philips MATV amplifiers PDF

    SOT23 W1P

    Abstract: BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 marking code V3 w1p code
    Text: Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 SOT23 BF547W BF689K SOT323 SOT54 BF747 SOT23 SOT54 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 BFG10/X BFG10W/X BFG11 BFG11/X BFG11W/X


    OCR Scan
    BF547 BF547W BF689K BF747 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 SOT23 W1P BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 marking code V3 w1p code PDF

    n20 ic protector

    Abstract: ICP-F10 ACCI ICP-N38 ICP-S2.3 ICP-N50 icp-s1.8 ICP-N25 ICPF25 ICP-F50
    Text: Transistors 1C protector Circuit protection elements •C irc u it protection elements ROHM circuit protectors protect semiconductors and their circuits by means of an excellent cutoff capability. Acci­ dents due to load shorts which destroy IC’s and valuable LSI’s are too numerous to count. Regardless of whether


    OCR Scan
    ICP-N25, ICP-F25 ICP-N38, ICP-F38 ICP-N50, ICP-F50 10/N15/N20/N25/N38/N50/N70 ICP-F10/F15/F20/F25/F38/F50/F70 ICP-N70, ICP-F70 n20 ic protector ICP-F10 ACCI ICP-N38 ICP-S2.3 ICP-N50 icp-s1.8 ICP-N25 ICPF25 ICP-F50 PDF

    n38 transistor

    Abstract: N38 Q TRANSISTOR N38 E 38n38 n38a
    Text: 2SK3439 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOS 41 2SK3439 TENTATIVE INDUSTRIAL HIGH SPEED , HIGH CURRENT SWITCHING APPLICATIONS. a p p l ic a t i o n s _ UNIT ; DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVË APPLICATIONS


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    2SK3439 n38 transistor N38 Q TRANSISTOR N38 E 38n38 n38a PDF

    transistor N43

    Abstract: 4083C
    Text: HIGH PERFORMANCE ANALOG iNTEOTATÊDCMCUfTS F eatu res Current Mode Four Quadrant Multiplier G eneral D escrip tion T he 4083C m akes use of an E lantec fully com plim entary oxide isolated bipolar process to produce a p a te n t pending cu rren t in, cu rren t out four q uadrant m ultiplier. In p u t and o u tp u t signal


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    EL4083C ixin17 VFI10 VFI12 VFI13 VFI14 VFI15 VFI16 VFI17 transistor N43 4083C PDF

    JCP-N15

    Abstract: CPN38 ICP-F25 ICP-N25 N25 ICP ICP-F50 ICP-F10 icp-s1.8 ICP-N70 ICP-N50
    Text: ROHRI Circuit Protection Elements •R O H M ’s Circuit Protection Elements RO HM overcurrent protection elements are in lightweight, small package, offering low internal impedance against rated current, but high resistance against cut off current. They positively protect semiconductors such as ICs, LSIs,


    OCR Scan
    E107856) ICP-F10 ICP-F15 ICP-F20 ICP-F25 CP-F38 ICP-F50 ICP-F70 JCP-N15 ICP-N25 CPN38 N25 ICP icp-s1.8 ICP-N70 ICP-N50 PDF

    ICP-N25

    Abstract: ICP-F25 ICP-N15 ICP-F15 ICP-F10
    Text: noHm Circuit Protection Elements •RO HM ’s Circuit Protection Elements ROHM overcurrent protection elements are in lightweight, small package, offering low internal impedance against rated current, but high resistance against cut off current. They positively protect semiconductors such as ICs, LSIs,


    OCR Scan
    E107856) ICP-F10 ICP-F15 P-F20 ICP-F25 ICP-F50 ICP-F70 ICP-N10 ICP-N15 ICP-N20 ICP-N25 PDF

    ICP-N38

    Abstract: ICP-F15 ICP-N50 ICP-N25 ICP-F25 icp n15 circuit protector ICP-N15 ICP-F50 icpn icp-s2.3
    Text: yi Circuit Protection Elements • III II I I I •R O H M ’s Circuit Protection Elements ROHM overcurrent protection elements are in lightweight, small package, offering low internal impedance against -n:; i current, but high resistance against cut off current. They positively protect semiconductors such as ICs, LSIs,


    OCR Scan
    ICP-F10 ICP-F15 ICP-F20 ICP-F25 ICP-F38 ICP-F50 ICP-F70 ICP-N10 ICP-N15 ICP-N20 ICP-N38 ICP-N50 ICP-N25 icp n15 circuit protector icpn icp-s2.3 PDF

    sot-23 MARKING CODE ZA

    Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
    Text: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same


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    OT-23, OT-89 OT-143 BZV49 OT-23 2SC2059K sot-23 MARKING CODE ZA b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23 PDF

    BFG590

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1995 Sep 19 Philips Sem iconductors 1998 Oct 02 PHILIPS Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X FEATURES PINNING • High pow er gain DESCRIPTION


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    BFG590; BFG590/X BFG590 125104/00/03/pp12 BFG590 PDF

    N1702

    Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
    Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961


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    2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A N1702 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922 PDF