N10E MOSFET Search Results

N10E MOSFET Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

N10E MOSFET Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
N10E TRANSISTOR Abstract: t9n10e n10e t9 n10e n10e mosfet AN569 MTD6N10 MTD9N10E MTD9N10E1 MTD9N10ET4 Text: MTD9N10E Preferred Device Power MOSFET 9 Amps, 100 Volts N–Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast	Original	MTD9N10E r14525 MTD9N10E/D N10E TRANSISTOR t9n10e n10e t9 n10e n10e mosfet AN569 MTD6N10 MTD9N10E MTD9N10E1 MTD9N10ET4	PDF
t9n10e Abstract: t9 n10e N10E TRANSISTOR mosfet transistor 400 volts.100 amperes n10e mosfet N10E MTD9N10ET4 MTD9N10E Text: MTD9N10E Preferred Device Power MOSFET 9 Amps, 100 Volts N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast	Original	MTD9N10E r14525 MTD9N10E/D t9n10e t9 n10e N10E TRANSISTOR mosfet transistor 400 volts.100 amperes n10e mosfet N10E MTD9N10ET4 MTD9N10E	PDF
E3P102 Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.	Original	DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl	PDF
PK P6KE 200A Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA Text: PRODUCT CATALOG & DESIGN GUIDE DIODE Transient Voltage Suppression TVS Diode Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop	Original	EC111 EC2111v1E0804 PK P6KE 200A SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA	PDF