75N10
Abstract: 67N10
Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 100 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 67N10 75N10
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67N10
75N10
75N10
67N10
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 100 V 100 V RDS on 67 A 25 mW 75 A 20 mW trr £ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR
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67N10
75N10
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transistor ixfh application note
Abstract: 75N10
Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 100 V 100 V Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 67N10
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67N10
75N10
transistor ixfh application note
75N10
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 100 V 100 V Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 67N10 75N10
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67N10
75N10
75N10
O-247
O-204
100ms
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75N10
Abstract: No abstract text available
Text: VDSS MegaMOSTMFET IXTH/IXTM 67 N10 IXTH/IXTM 75 N10 100 V 100 V ID25 RDS on 67 A 25 mΩ Ω Ω 75 A 20 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 100 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 100 V
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67N10
75N10
O-204
O-247
O-204
O-247
75N10
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Diode D25 N10 R
Abstract: 75N10 IXTH75N10
Text: VDSS MegaMOSTMFET IXTH/IXTM 67 N10 100 V IXTH/IXTM 75 N10 100 V ID25 RDS on 67 A 25 mΩ Ω Ω 75 A 20 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V V GS
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67N10
75N10
O-204
O-247
O-204
O-247
Diode D25 N10 R
75N10
IXTH75N10
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Diode Mark N10
Abstract: RFP18N10 TA17421 RFM18N08 RFM18N10 RFP18N08 TB334
Text: [ /Title RFM18 N08, RFM18 N10, RFP18N 08, RFP18N 10 /Subject (18A, 80V and 100V, 0.1 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN FO pdfmark RFM18N08, RFM18N10, RFP18N08, RFP18N10
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RFM18
RFP18N
O204AA,
O220AB)
RFM18N08,
RFM18N10,
RFP18N08,
RFP18N10
Diode Mark N10
RFP18N10
TA17421
RFM18N08
RFM18N10
RFP18N08
TB334
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IXFN150N10
Abstract: 150N10
Text: HiPerFETTM Power MOSFET IXFN 150 N10 VDSS 3 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family 2 4 Preliminary data * 1 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 100 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous
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IXFN150N10
IXFN150N10
150N10
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diode T 3512
Abstract: D-68623 E72873 ds 35-12 e ixys MWI 35-12 A5
Text: MWI 35-12 A5 IC25 = 45 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA W1 A10 B10 I 10 K10 R10 S10 F3 K3 P3 E10 F10 M10 N10 V10 W10 E 72873 A1 Preliminary data Symbol Conditions VCES VCGR TJ = 25°C to 150°C
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D-68623
diode T 3512
E72873
ds 35-12 e
ixys MWI 35-12 A5
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D-68623
Abstract: E72873
Text: MWI 50-12 A5 IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA W1 A10 B10 I 10 K10 R10 S10 F3 K3 P3 E10 F10 M10 N10 V10 W10 E 72873 A1 Preliminary data Symbol Conditions VCES VCGR TJ = 25°C to 150°C
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D-68623
E72873
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842 ic
Abstract: D-68623 E72873 IC N10
Text: MWI 75-12 A5 IC25 = 90 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA W1 A10 B10 I 10 K10 R10 S10 F3 K3 P3 E10 F10 M10 N10 V10 W10 E 72873 A1 Preliminary data Symbol Conditions VCES VCGR TJ = 25°C to 150°C
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D-68623
842 ic
E72873
IC N10
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Switching Diode LIMN10T1G !Applications Ultra high speed switching 6 5 4 !Features 1 Multiple diodes in one small surface mount package. 2) Diode characteristics are matched in the package. 3) Pb−Free Package is Available. 1 2
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LIMN10T1G
LIMN10T3G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Switching Diode LIMN10T1G !Applications Ultra high speed switching 6 5 4 !Features 1 Multiple diodes in one small surface mount package. 2) Diode characteristics are matched in the package. 3) Pb−Free Package is Available. 1 2
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LIMN10T1G
LIMN10T3G
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n10 diode
Abstract: marking N10
Text: LESHAN RADIO COMPANY, LTD. Switching Diode LIMN10T1G !Applications Ultra high speed switching 6 5 4 !Features 1 Multiple diodes in one small surface mount package. 2) Diode characteristics are matched in the package. 3) Pb−Free Package is Available. 1 2
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LIMN10T1G
LIMN10T3G
n10 diode
marking N10
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gv300
Abstract: PLC-5 msg D2-3359 1747-l532 GV3000 2CN3000 gv3000 AC 106 electronic circuit diagram gv3000 version 5.8 RSLOGIX5000 PROGRAMMING PROCEDURE circuit diagram for SLC500 power supply
Text: GV3000/SE AC Drive ControlNet Network Communication Option Board M/N 2CN3000 Instruction Manual D2-3390-2 The information in this manual is subject to change without notice. Throughout this manual, the following notes are used to alert you to safety considerations:
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GV3000/SE
2CN3000
D2-3390-2
RS-232
gv300
PLC-5 msg
D2-3359
1747-l532
GV3000
2CN3000
gv3000 AC 106 electronic circuit diagram
gv3000 version 5.8
RSLOGIX5000 PROGRAMMING PROCEDURE
circuit diagram for SLC500 power supply
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mbm150gr12
Abstract: MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt
Text: Status List Date:Sept. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant N:Non compliant Included RoHS exemption substance Production Status M:Mass production W:Working sample D:Discontinued High-Voltage High-Power Series Electrical Characteristics
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MBN1200E17D
MBN1600E17D
MBN1800E17D
KS10004
mbm150gr12
MBN1200D33A
C2E1
MBM300GS12A
5252 F 1002
MDN1200D33
m8nd
mbm200js12ew
MBM800E17D
mbn1200e25c igbt
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Diode D25 N10 P
Abstract: Diode D25 N10 R
Text: p V DSS MegaMOS FET IXTH/IXTM 67 N10 IXTH/IXTM 75 N10 100 V 100V ^D25 DS on 67 A 25 mQ 75 A 20 mQ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T j = 25“ C to 150°C 100 V V«, ^ 100 V Vos v GSM Continuous ±20 V T ransient ±30
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67N10
75N10
O-247
O-204
O-204
O-247
Diode D25 N10 P
Diode D25 N10 R
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Diode D25 N10 R
Abstract: 365R IXYs M ir 931 Diode D25 N10 P
Text: VDSS HiPerFET Power MOSFETs IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 100V 100 V D ^D25 DS on 67 A 25 mi2 75 A 20 m il t ^ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family 90 G As Symbol Test Conditions V DSS Tj = 25CC to 150°C 100 V VOOB
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67N10
75N10
1XFM67W0
75N10
Diode D25 N10 R
365R
IXYs M
ir 931
Diode D25 N10 P
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150N10
Abstract: No abstract text available
Text: HiPerFET Power MOSFETs IXFK 100 N10 IXFN 150 N10 V DSS ^025 100 V 100 V 100 A 150 A D DS on 12 mQ 12 mQ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Voss T, = 25 °C tO l50°C 100 100 V Voen T, = 25°C to 150°C; RGS = 1 M£2
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IXFK100N10
IXFN150N10
O-264
OT-227
E153432
IXFK10QN40
150N10
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Untitled
Abstract: No abstract text available
Text: J □IXYS p VDSS ^D 25 IXTH/IXTM 67 N10 100 V IXTH/IXTM 75 N10 100 V M e g a M O S F E T 67 A 75 A D S on 25 m£2 20 mß N-Channel Enhancement Mode Symbol Test Conditions V DSS T j = 25°C to 150°C 100 V vDGR T j = 25 °C to 150°C; RGS = 1 Mi2 100 V
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67N10
75N10
O-204
O-204
4bflb22b
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Diode D25 N10 R
Abstract: Diode D25 N10 P
Text: XYS HiPerFET Power MOSFETs IXFK100N10 IXFN150 N10 v ¥ DSS ^D25 P DS on = = = 100 V 100/150 A 12 mQ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr K P relim inary data TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK
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IXFK100N10
IXFN150
O-264
OT-227
E153432
Diode D25 N10 R
Diode D25 N10 P
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OA115
Abstract: da226u DA106U
Text: Diode Arrays Vr V lo (mA) 80 100 trr Max. (ns) 4 80 100 4 80 80 4 4 - 80 80 80 100 100 100 100 100 4 4 4 - 80 100 4 - 80 80 100 - 25 4 4 SST SM T UMT EM 3 - FM T Fig .6 Fig .2 UMN1 FMP1 UMP1 80 25 4 Fig.14 25 4 - UM5 80 FMT Fig .7 80 25 4 UM5 M N10 4 4 MP11
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Fig-13
DA227
DAN202C
DAN202K
DAN202U
DAN222
DAP202C
DAP202K
DAP202U
DAP222
OA115
da226u
DA106U
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BZD27-C100P
Abstract: n10 marking code marking code N10 BZD27C BZD27C11P BZD27C12P BZD27C13P BZD27-C200P N10 MARKING C12P
Text: SEMICONDUCTOR [SB TAIWAN Pb BZD27C SERIES 0.8 Watts Voltage Regulator Diodes Sub SMA RoHS COMPLIANCE □ J i L Features -4* <>• 0.114 2.9 0.106(2.7) Silicon ze n e r diodes Low profile surface-m ount package Z en e r and surge current specification Low leakage current
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BZD27C
BZD27C27P
BZD27C33P
BZD27C36P
BZD27C39P
BZD27C43P
BZD27C47P
BZD27C51P
BZD27C62P
BZD27C68P
BZD27-C100P
n10 marking code
marking code N10
BZD27C11P
BZD27C12P
BZD27C13P
BZD27-C200P
N10 MARKING
C12P
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0409 04 021 001
Abstract: VAP-102 varactor varian varian n20 n10 VAP1 VAP-101
Text: DESCRIPTION V arian 400-gigahertz diodes are microwave gallium -arsenide varactor diodes which provide extraordinary gain bandwidth perform ance with exceptionally-low noise figure at frequencies from UHF through Ku bands. These diodes m eet the m ost demanding mechanical and environmen
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400-gigahertz
0409 04 021 001
VAP-102
varactor varian
varian
n20 n10
VAP1
VAP-101
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