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    N-MOSFET P-MOSFET PAIR Search Results

    N-MOSFET P-MOSFET PAIR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N-MOSFET P-MOSFET PAIR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TC7320 Six Pair, N- and P-Channel Enhancement-Mode MOSFET Features General Description Six N- and P-channel MOSFET pairs Integrated gate-to-source resistor Integrated gate-to-source Zener diode Low threshold Low on-resistance Low input capacitance Fast switching speeds


    Original     		PDF TC7320 TC7320 32-lead DSFP-TC7320 C122208

    Untitled

    Abstract: No abstract text available
    Text: 20V N & P Pair Enhancement Mode MOSFET Product Description Features GSM1563, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone


    Original     		PDF GSM1563, -20V/-1 -20V/-0 1440mâ Lane11

    Untitled

    Abstract: No abstract text available
    Text: 30V N&P Enhancement Mode MOSFET Product Description Features GSM4539S, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM4539S, -30V/-5 -30V/-4 GSM4539SSF Lane11

    Untitled

    Abstract: No abstract text available
    Text: N & P Pair Enhancement Mode MOSFET Product Description Features The GSM6332 is the N and P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge.   These devices are particularly suited for low voltage power management, such as smart phone


    Original     		PDF GSM6332 -20V/-1 -20V/-0 1440mâ Lane11

    ultrasound transducer circuit driver 1mhz

    Abstract: gate-source zener TC6320 Piezoelectric 1Mhz 125OC 27BSC TC6320TG zener diode reverse breakdown voltage 4.5V P-channel MOSFET VGS -25V
    Text: TC6320 N- and P- Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC6320TG consists of a high voltage low threshold N-channel and P-channel MOSFET in an SO8 package. Both MOSFETs have integrated gate-source


    Original     		PDF TC6320 TC6320TG TC6320 27BSC DSFP-TC6320 C112106 ultrasound transducer circuit driver 1mhz gate-source zener Piezoelectric 1Mhz 125OC 27BSC zener diode reverse breakdown voltage 4.5V P-channel MOSFET VGS -25V

    KTHC5513

    Abstract: No abstract text available
    Text: IC IC SMD Type Power MOSFET KTHC5513 Features Complementary N-Channel and P-Channel MOSFET Leadless SMD Package Featuring Complementary Pair Low RDS on in a ChipFET Package for High Efficiency Performance Low Profile ( 1.10 mm) Allows Placement in Extremely Thin


    Original     		PDF KTHC5513 KTHC5513

    Untitled

    Abstract: No abstract text available
    Text: MD1210 High Speed Dual MOSFET Driver Features General Description ► ► ► ► ► ► ► ► ► ► The Supertex MD1210 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring


    Original     		PDF MD1210 MD1210 DSFP-MD1210 B011507

    Untitled

    Abstract: No abstract text available
    Text: MD1210 High Speed Dual MOSFET Driver Features General Description ► ► ► ► ► ► ► ► ► ► The Supertex MD1210 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring


    Original     		PDF MD1210 MD1210 MO-220, DSPD-12QFNK64X4P080, A061708 DSFP-MD1210 C062408

    Untitled

    Abstract: No abstract text available
    Text: MD1210 High Speed Dual MOSFET Driver Features General Description ► ► ► ► ► ► ► ► ► ► The Supertex MD1210 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring


    Original     		PDF MD1210 1000pF MO-220, DSPD-12QFNK64X4P080, NR070208. DSFP-MD1210 C070208

    P channel MOSFET 10A

    Abstract: P channel MOSFET 10A schematic LPT-4545-A002 UU100 LTC1266-3.3 919AS-4R7M LTC1266 MBR0530T1 MBRS130LT3 Si9410
    Text: LTC1266 LTC1266-3.3/LTC1266-5 Synchronous Regulator Controller for N- or P-Channel MOSFETs U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Ultrahigh Efficiency: Over 95% Possible Drives N-Channel MOSFET for High Current or P-Channel MOSFET for Low Dropout


    Original     		PDF LTC1266 LTC1266-3 3/LTC1266-5 LTC1266A) LTC1735 LTC1772 OT-23 550kHz, LTC1929 1266fa P channel MOSFET 10A P channel MOSFET 10A schematic LPT-4545-A002 UU100 LTC1266-3.3 919AS-4R7M LTC1266 MBR0530T1 MBRS130LT3 Si9410

    Untitled

    Abstract: No abstract text available
    Text: LTC1266 LTC1266-3.3/LTC1266-5 Synchronous Regulator Controller for N- or P-Channel MOSFETs FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Ultrahigh Efficiency: Over 95% Possible Drives N-Channel MOSFET for High Current or P-Channel MOSFET for Low Dropout


    Original     		PDF LTC1266 LTC1266-3 3/LTC1266-5 LTC1266A) LTC1735 LTC1772 OT-23 550kHz, LTC1929 1266fa

    A 1266

    Abstract: ltc1266 CTXO212801 MBR0530T1 MBRS130LT3 Si9410 electrolytic capacitor 470
    Text: LTC1266 LTC1266-3.3/LTC1266-5 Synchronous Regulator Controller for N- or P-Channel MOSFETs DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Ultra-High Efficiency: Over 95% Possible Drives N-Channel MOSFET for High Current or P-Channel MOSFET for Low Dropout


    Original     		PDF LTC1266 LTC1266-3 3/LTC1266-5 LTC1266A) LTC1149 LTC1159 LTC1174 LTC1265 LTC1267 A 1266 ltc1266 CTXO212801 MBR0530T1 MBRS130LT3 Si9410 electrolytic capacitor 470

    voltage level shifter 3.3V to 5V

    Abstract: ultrasound air ultrasound piezoelectric transducer for medical MD1210 MD1210K6-G TC6320TG SY QFN
    Text: MD1210 High Speed Dual MOSFET Driver Features General Description ► ► ► ► ► ► ► ► ► ► The Supertex MD1210 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring


    Original     		PDF MD1210 MD1210 DSFP-MD1210 B011507 voltage level shifter 3.3V to 5V ultrasound air ultrasound piezoelectric transducer for medical MD1210K6-G TC6320TG SY QFN

    Untitled

    Abstract: No abstract text available
    Text: DMC3018LSD N EW PRODU CT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Complementary Pair MOSFET Low On-Resistance • N-Channel: 20m @ 10V 32m @ 4.5V • P-Channel: 45m @ -10V 65m @ -4.5V Low Gate Threshold Voltage


    Original     		PDF DMC3018LSD AEC-Q101 J-STD-020 DS31310

    ultrasound transducer circuit driver

    Abstract: logic level n channel MOSFET Logic Level N-Channel Power MOSFET mark vh mosfet High-Speed Switching 100mhz ultrasound block diagram ultrasound transducer Input output waveforms MD1210 MD1210K6-G MO-220
    Text: MD1210 High Speed Dual MOSFET Driver Features General Description ► ► ► ► ► ► ► ► ► ► The Supertex MD1210 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring a high


    Original     		PDF MD1210 MD1210 DSFP-MD1210 C103008 ultrasound transducer circuit driver logic level n channel MOSFET Logic Level N-Channel Power MOSFET mark vh mosfet High-Speed Switching 100mhz ultrasound block diagram ultrasound transducer Input output waveforms MD1210K6-G MO-220

    Untitled

    Abstract: No abstract text available
    Text: MD1210 High Speed Dual MOSFET Driver Features General Description ► ► ► ► ► ► ► ► ► ► The Supertex MD1210 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring a high


    Original     		PDF MD1210 1000pF DSFP-MD1210 C100308

    ultrasound piezoelectric array

    Abstract: mosfet High-Speed Switching 100mhz ultrasound transducer circuit driver MD1213 ultrasound transducer high power driver MD1213K6-G TC6320 voltage level shifter 3.3V to 5V voltage level shifter 0V to 5V MD-1213
    Text: MD1213 High Speed Dual MOSFET Driver Features General Description ► ► ► ► ► ► ► ► ► ► The Supertex MD1213 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring a high


    Original     		PDF MD1213 MD1213 DSFP-MD1213 NR072007 ultrasound piezoelectric array mosfet High-Speed Switching 100mhz ultrasound transducer circuit driver ultrasound transducer high power driver MD1213K6-G TC6320 voltage level shifter 3.3V to 5V voltage level shifter 0V to 5V MD-1213

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of


    Original     		PDF SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402

    Untitled

    Abstract: No abstract text available
    Text: Si1555DL Vishay Siliconix Complementary Low-Threshold MOSFET Pair FEATURES PRODUCT SUMMARY VDS V N-Channel 20 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si1555DL 2002/95/EC OT-363 SC-70 Si1555DL-T1-E3 Si1555DL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    MD1210

    Abstract: MD1210K6-G MO-220 TC6320TG
    Text: MD1210 High Speed Dual MOSFET Driver Features General Description ► ► ► ► ► ► ► ► ► ► The Supertex MD1210 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring a high output


    Original     		PDF MD1210 MD1210 DSFP-MD1210 C081309 MD1210K6-G MO-220 TC6320TG

    MD1213

    Abstract: MD-1213 ultrasound transducer CCD
    Text: MD1213 High Speed Dual MOSFET Driver Features General Description ► ► ► ► ► ► ► ► ► ► The Supertex MD1213 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring a high output


    Original     		PDF MD1213 1000pF MD1213 DSFP-MD1213 NR050208 MD-1213 ultrasound transducer CCD

    MD-1213

    Abstract: No abstract text available
    Text: MD1213 High Speed Dual MOSFET Driver Features General Description ► ► ► ► ► ► ► ► ► ► The Supertex MD1213 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring a high output current for a


    Original     		PDF MD1213 1000pF MD1213 MO-220, DSPD-12QFNK64X4P080, NR080408. DSFP-MD1213 A080808 MD-1213

    Diode PJ 1266 IV

    Abstract: LTC1267
    Text: /T liriÇ A B LTC1266 LTC 12 6 6 -3 ,3/LTCI 266 -5 TECHNOLOGY Synchronous Regulator Controller for N- or P-Channel MOSFETs FCRTURCS DCSCRIPTIOfl • Ultra-High Efficiency: Over 95% Possible ■ Drives N-Channel MOSFET for High Current or P-Channel MOSFET for Low Dropout


    OCR Scan     		PDF LTC1266 LTC1266A) LTC1148 LTC1149 LTC1159 LTC1174 LTC1265 LTC1267 0D1260^ Diode PJ 1266 IV LTC1267

    S 0240

    Abstract: No abstract text available
    Text: PAIRCHII-D November 1998 M IC D N D U C T Q R ! FDN340P Single P-Channel 2.5V Specified Pow erTrench MOSFET Features General D escription This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    OCR Scan     		PDF FDN340P S 0240