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    N-MOSFET 150V 150MA Search Results

    N-MOSFET 150V 150MA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    N-MOSFET 150V 150MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD-96930B 2N7590T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67134CM 100K Rads (Si) RDS(on) I D 0.090Ω 19A IRHYS63134CM 300K Rads (Si) 0.090Ω


    Original     		PDF PD-96930B 2N7590T3 O-257AA) IRHYS67134CM IRHYS67134CM IRHYS63134CM 90MeV/ 5M-1994. O-257AA.

    2N7590T3

    Abstract: No abstract text available
    Text: PD-96930C 2N7590T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67134CM 100K Rads (Si) RDS(on) I D 0.090Ω 19A IRHYS63134CM 300K Rads (Si) 0.090Ω


    Original     		PDF PD-96930C 2N7590T3 O-257AA) IRHYS67134CM IRHYS67134CM IRHYS63134CM O-257AA 90MeV/ 5M-1994. O-257AA. 2N7590T3

    2n7590

    Abstract: No abstract text available
    Text: PD-96930B 2N7590T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67134CM 100K Rads (Si) RDS(on) I D 0.090Ω 19A IRHYS63134CM 300K Rads (Si) 0.090Ω


    Original     		PDF PD-96930B 2N7590T3 O-257AA) IRHYS67134CM IRHYS63134CM 90MeV/ 5M-1994. O-257AA. 2n7590

    2N7590

    Abstract: No abstract text available
    Text: PD-96930B 2N7590T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67134CM 100K Rads (Si) RDS(on) I D 0.090Ω 19A IRHYS63134CM 300K Rads (Si) 0.090Ω


    Original     		PDF PD-96930B 2N7590T3 O-257AA) IRHYS67134CM IRHYS63134CM 90MeV/ 5M-1994. O-257AA. 2N7590

    JANSR2N7589U3

    Abstract: IRHNJ63134 PD-96931B JANSF2N7589U3
    Text: PD-96931B IRHNJ67134 JANSR2N7589U3 150V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/746 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67134 100K Rads (Si) IRHNJ63134 300K Rads (Si) RDS(on) 0.088Ω 0.088Ω


    Original     		PDF PD-96931B IRHNJ67134 IRHNJ63134 JANSR2N7589U3 MIL-PRF-19500/746 JANSF2N7589U3 90MeV/ MIL-STD-750, PD-96931B JANSF2N7589U3

    JANSR2N7589U3

    Abstract: No abstract text available
    Text: PD-96931C IRHNJ67134 JANSR2N7589U3 150V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/746 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67134 100K Rads (Si) IRHNJ63134 300K Rads (Si) RDS(on) 0.088Ω 0.088Ω


    Original     		PDF PD-96931C IRHNJ67134 JANSR2N7589U3 MIL-PRF-19500/746 IRHNJ67134 IRHNJ63134 JANSF2N7589U3 90MeV/ MIL-STD-750, JANSR2N7589U3

    Untitled

    Abstract: No abstract text available
    Text: PD-96931B IRHNJ67134 JANSR2N7589U3 150V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/746 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67134 100K Rads (Si) IRHNJ63134 300K Rads (Si) RDS(on) 0.088Ω 0.088Ω


    Original     		PDF PD-96931B IRHNJ67134 JANSR2N7589U3 MIL-PRF-19500/746 IRHNJ67134 IRHNJ63134 JANSF2N7589U3 90MeV/ MIL-STD-750,

    Untitled

    Abstract: No abstract text available
    Text: PD-96959B 2N7581U2 IRHNA67164 150V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY Product Summary Part Number IRHNA67164 Radiation Level 100K Rads (Si) RDS(on) 0.018Ω ID 56A* IRHNA63164 300K Rads (Si) 0.018Ω 56A* International Rectifier’s R6TM technology provides


    Original     		PDF PD-96959B 2N7581U2 IRHNA67164 IRHNA63164 90MeV/ MIL-STD-750, MlL-STD-750,

    2N7581

    Abstract: 2N768 2N758 2N7581u2
    Text: PD-96959B 2N7581U2 IRHNA67164 150V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY Product Summary Part Number IRHNA67164 Radiation Level 100K Rads (Si) RDS(on) 0.018Ω ID 56A* IRHNA63164 300K Rads (Si) 0.018Ω 56A* International Rectifier’s R6TM technology provides


    Original     		PDF PD-96959B IRHNA67164 IRHNA63164 2N7581U2 90MeV/ MIL-STD-750, MlL-STD-750, 2N7581 2N768 2N758

    Untitled

    Abstract: No abstract text available
    Text: PD-96997A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYB67134CM 100K Rads (Si) RDS(on) I D 0.090Ω 19A IRHYB63134CM 300K Rads (Si) 0.090Ω 19A International Rectifier’s R6 TM technology provides


    Original     		PDF PD-96997A O-257AA) IRHYB67134CM IRHYB63134CM 90MeV/ 5M-1994. O-257AA.

    Untitled

    Abstract: No abstract text available
    Text: PD-96997A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYB67134CM 100K Rads (Si) RDS(on) I D 0.090Ω 19A IRHYB63134CM 300K Rads (Si) 0.090Ω 19A International Rectifier’s R6 TM technology provides


    Original     		PDF PD-96997A O-257AA) IRHYB67134CM IRHYB67134CM IRHYB63134CM 90MeV/ 5M-1994. O-257AA.

    470pf

    Abstract: No abstract text available
    Text: HIGH VOLTAGE POWER OPERATIONAL AMPLIFIERS PA85 • PA85A HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • HIGH VOLTAGE — 450V (±225V) • HIGH SLEW RATE — 1000V/µS • HIGH OUTPUT CURRENT — 200mA


    Original     		PDF PA85A 546-APEX 200mA PA85MU 470pf

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


    Original     		PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415

    Untitled

    Abstract: No abstract text available
    Text: LTC4054L-4.2 150mA Standalone Linear Li-Ion Battery Charger in ThinSOT DESCRIPTION FEATURES n n n n n n n n n n n n n Programmable Charge Current Range: 10mA to 150mA No External MOSFET, Sense Resistor or Blocking Diode Required Complete Linear Charger in ThinSOT Package for


    Original     		PDF LTC4054L-4 150mA 150mA LTC4058 950mA LTC4410 LTC4053, LTC1733, LTC4054 4054l42fa

    FR4 pcb

    Abstract: No abstract text available
    Text: PA79 PA79 P r o d u c t IInnnnoovvaa t i o n FFr roomm Power Operational Amplifier FEATURES DESCRIPTION The PA79 is a high voltage, high speed, low idle current op-amp capable of delivering up to 200mA peak output current. Due to the dynamic biasing of the input


    Original     		PDF 150mA 200mA 2-A-113-D, 350mm2, PA79U FR4 pcb

    capacitor 100 microfarad 50v

    Abstract: PA78EU pa78 design
    Text: PA78 PA78 P r o d u c t IInnnnoovvaa t i o n FFr roomm Power Operational Amplifier FEATURES DESCRIPTION The PA78 is a high voltage, high speed, low idle current op-amp capable of delivering up to 200mA peak output current. Due to the dynamic biasing of the input


    Original     		PDF 150mA 200mA PA78U capacitor 100 microfarad 50v PA78EU pa78 design

    AAT2430

    Abstract: No abstract text available
    Text: DATA SHEET AAT2491 Dual N-Channel HV Cascode-Clamp, Lateral TrenchDMOS Array Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT2491 is a monolithically integrated dual N-channel high-voltage cascode-clamp lateral TrenchDMOS array. The dual-channel AAT2491 monolithically integrates


    Original     		PDF AAT2491 AAT2491 24side 01934A AAT2430

    PA78EU

    Abstract: variable resistor 50k PA86U
    Text: PA86 PA86 P r o d u c t IInnnnoovvaa t i o n FFr roomm Power Operational Amplifier FEATURES DESCRIPTION The PA86 is a high voltage, high speed, low idle current op-amp capable of delivering up to 200mA peak output current. Due to the dynamic biasing of the input


    Original     		PDF 150mA 200mA PA86U PA78EU variable resistor 50k PA86U

    vishay zener diode 1A 30v

    Abstract: zener smd diode 3.3v 1w N mosfet 100v 600A zener diode 3.3v 10w zener 15v diode 300mA 1A 60V SCHOTTKY diode toshiba zener smd diode 6.2v 1w vishay 10w resistor 200V, 1W zener diode 314v Optocoupler
    Text: ெࡔࡔॆӷ‫ິࠅ༹ڞ‬ ᆌᆩጀ๥1346 JosephāDeNicholas 2006౎3ሆ ᆅჾ ‫ݴ‬पఇ๕ āāLM5070HE ߛၳ ೠࠚ‫ۉ‬ୟӱጆோยऺᆩઠ༵ࠃᇑ āāྺକߵ਍‫ۉ‬ᇸ؏ൽઠߴPD‫ڪݴ‬पLjPSEॽࣷߴPD IEEE802.3afग़ඹ‫ڦ‬ᅜ໿ྪઍ‫(ۉ‬PoE)‫ۉ‬ᇸă޿‫ۉ‬ᇸ‫܀ڦ‬


    Original     		PDF IEEE802 LM5070 LM5070HE( LM5070" 250kHz vishay zener diode 1A 30v zener smd diode 3.3v 1w N mosfet 100v 600A zener diode 3.3v 10w zener 15v diode 300mA 1A 60V SCHOTTKY diode toshiba zener smd diode 6.2v 1w vishay 10w resistor 200V, 1W zener diode 314v Optocoupler

    DIODE SMD 44w

    Abstract: power supply 100v 30a schematic smd transistor 44w 1A 60V SCHOTTKY diode toshiba 314v Optocoupler CMZ5936B LM5070 12v output panasonic diode C2012X7R1C224 smd 44w
    Text: National Semiconductor Application Note 1346 Joseph DeNicholas March 2006 Introduction Classification Mode The LM5070 HE High Efficiency evaluation board is designed to provide an IEEE802.3af compliant, Power over Ethernet (PoE) power supply. The power supply features the


    Original     		PDF LM5070 IEEE802 CSP-9-111S2) CSP-9-111S2. AN-1346 DIODE SMD 44w power supply 100v 30a schematic smd transistor 44w 1A 60V SCHOTTKY diode toshiba 314v Optocoupler CMZ5936B LM5070 12v output panasonic diode C2012X7R1C224 smd 44w

    Pa3177NL

    Abstract: LT3748 IGBT 48V 200A Si7738 BZT52C5 RC snubber mosfet design 750311591 flyback snubber c3748 B360 diode
    Text: LT3748 100V Isolated Flyback Controller Features n n n n n n n n n n Description 5V to 100V Input Voltage Range 1.9A Average Gate Drive Source and Sink Current Boundary Mode Operation No Transformer Third Winding or Opto-Isolator Required for Regulation Primary-Side Winding Feedback Load Regulation


    Original     		PDF LT3748 0V/100V LT1725 LT1737 3803/LTC3803-3 200kHz/300kHz LTC3803-5 LTC3805/LTC3805-5 3748f Pa3177NL LT3748 IGBT 48V 200A Si7738 BZT52C5 RC snubber mosfet design 750311591 flyback snubber c3748 B360 diode

    si7738

    Abstract: Pa3177NL pa2467
    Text: LT3748 100V Isolated Flyback Controller FEATURES n n n n n n n n n n DESCRIPTION The LT 3748 is a switching regulator controller specifically designed for the isolated flyback topology and capable of high power. It drives a low side external N-channel power


    Original     		PDF LT3748 LT1725 LT1737 3803/LTC3803-3 200kHz/300kHz LTC3803-5 LTC3805/LTC3805-5 3748fa si7738 Pa3177NL pa2467

    Pa3177NL

    Abstract: LT3748 600V 300A igbt dc to dc boost converter IGBT 48V 200A Si7738 LT3748EMS PA2467NL DC1557 PA2367NL SBR8U60P5
    Text: LT3748 100V Isolated Flyback Controller FEATURES DESCRIPTION n The LT 3748 is a switching regulator controller specifically designed for the isolated flyback topology and capable of high power. It drives a low side external N-channel power MOSFET from an internally regulated 7V supply. No third


    Original     		PDF LT3748 LT1725 LT1737 3803/LTC3803-3 200kHz/300kHz LTC3803-5 LTC3805/LTC3805-5 3748fa Pa3177NL LT3748 600V 300A igbt dc to dc boost converter IGBT 48V 200A Si7738 LT3748EMS PA2467NL DC1557 PA2367NL SBR8U60P5

    1000w inverter PURE SINE WAVE schematic diagram

    Abstract: 4000w audio amplifier 4000w AUDIO AMPLIFIER CIRCUIT DIAGRAM 12v 200W AUDIO booster CIRCUIT DIAGRAM 5000w audio amplifier circuit diagram PA09 8 PIN TO-3 PACKAGE DIMENSIONS 3000w audio amplifier 5000w power amplifier circuit diagram power amplifier 5000W with schematic 50w ultrasonic generator 40khz
    Text: For latest updates, please see Product SA01 SA02 SA03 SA04 SA06 SA07 SA13 SA14 SA16 SA50 SA51 PA01/73 PA02 PA03 PA04 PA05 PA07 PA08 PA09 PA10 PA12 PA19 PA21/25/26 PA41/42 PA44 PA45 PA46 PA51 PA61 PA81/82J


    Original     		PDF PA01/73 PA21/25/26 PA41/42 PA81/82J 1000w inverter PURE SINE WAVE schematic diagram 4000w audio amplifier 4000w AUDIO AMPLIFIER CIRCUIT DIAGRAM 12v 200W AUDIO booster CIRCUIT DIAGRAM 5000w audio amplifier circuit diagram PA09 8 PIN TO-3 PACKAGE DIMENSIONS 3000w audio amplifier 5000w power amplifier circuit diagram power amplifier 5000W with schematic 50w ultrasonic generator 40khz