mosfet 2n4351
Abstract: 2N4351
Text: 2N4351 N-CHANNEL MOSFET The 2N4351 is an enhancement mode N-Channel Mosfet The 2N4351 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.
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2N4351
2N4351
100mA
mosfet 2n4351
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LS4352
Abstract: No abstract text available
Text: LS4352 N-CHANNEL MOSFET The LS4352 is an enhancement mode N-Channel Mosfet The LS4352 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.
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LS4352
2N4352
100mA
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Untitled
Abstract: No abstract text available
Text: LS3N171 N-CHANNEL MOSFET The LS3N171 is an enhancement mode N-Channel Mosfet The LS3N171 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.
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LS3N171
LS3N171
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bare Die mosfet
Abstract: No abstract text available
Text: LS4351 N-CHANNEL MOSFET The LS4351 is an enhancement mode N-Channel Mosfet The LS4351 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.
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LS4351
2N4351
100mA
bare Die mosfet
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2N4352
Abstract: No abstract text available
Text: 2N4352 N-CHANNEL MOSFET The 2N4352 is an enhancement mode N-Channel Mosfet The 2N4352 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.
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2N4352
2N4352
100mA
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td 1603
Abstract: No abstract text available
Text: 3N171 N-CHANNEL MOSFET The 3N171 is an enhancement mode N-Channel Mosfet The 3N171 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.
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3N171
3N171
td 1603
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3N170
Abstract: No abstract text available
Text: 3N170 N-CHANNEL MOSFET The 3N170 is an enhancement mode N-Channel Mosfet The 3N170 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.
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3N170
3N170
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Untitled
Abstract: No abstract text available
Text: LS3N170 N-CHANNEL MOSFET The LS3N170 is an enhancement mode N-Channel Mosfet The LS3N170 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.
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LS3N170
LS3N170
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rs808
Abstract: No abstract text available
Text: HUF76112SK8 Data Sheet April 2000 File Number 4834.1 7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET The HUF76112SK8 is an Application-Specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low
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HUF76112SK8
HUF76112SK8
725pF
rs808
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RS808
Abstract: AN7254 AN9321 AN9322 HUF76112SK8 HUF76112SK8T MS-012AA TB334 pspice model gate driver
Text: HUF76112SK8 TM Data Sheet April 2000 File Number 4834.1 7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET The HUF76112SK8 is an Application-Specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low
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HUF76112SK8
HUF76112SK8
RS808
AN7254
AN9321
AN9322
HUF76112SK8T
MS-012AA
TB334
pspice model gate driver
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Untitled
Abstract: No abstract text available
Text: HUF76013P3, HUF76013D3S Data Sheet April 2000 File Number 4849.1 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs The HUF76013 is an application-specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low
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HUF76013P3,
HUF76013D3S
HUF76013
HUF76013D3S
O-252AA
HUF76013P3
O-220AB
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HUF76013P3
Abstract: TB334 76013D AN7254 HUF76013D3S HUF76013D3ST 640E3
Text: HUF76013P3, HUF76013D3S TM Data Sheet April 2000 File Number 4849 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs The HUF76013 is an application-specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low
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HUF76013P3,
HUF76013D3S
HUF76013
O-252AA
HUF76013P3
O-220AB
HUF76013P3
TB334
76013D
AN7254
HUF76013D3S
HUF76013D3ST
640E3
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ED26 diode
Abstract: 8602 RECTIFIER AN8602 mos Turn-off Thyristor 8602 RECTIFIER 4 PIN P channel 600v 20a IGBT Pelly P channel 600v 30a IGBT applications of mos controlled thyristor INTERSIL 1981
Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to that of an n-channel power MOSFET but employs an n-epitaxial layer grown on a p+ substrate. In operation, the
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AN8602
ED26 diode
8602 RECTIFIER
mos Turn-off Thyristor
8602 RECTIFIER 4 PIN
P channel 600v 20a IGBT
Pelly
P channel 600v 30a IGBT
applications of mos controlled thyristor
INTERSIL 1981
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Untitled
Abstract: No abstract text available
Text: DATASHEET 80V, 500mA, 3-Phase MOSFET Driver HIP4086, HIP4086A Features The HIP4086 and HIP4086A referred to as the HIP4086/A are three phase N-Channel MOSFET drivers. Both parts are specifically targeted for PWM motor control. These drivers have flexible input protocol for driving every possible switch
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500mA,
HIP4086,
HIP4086A
HIP4086
HIP4086/A)
HIP4086/A
100kHz)
95VDC
MS-013-AD
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Untitled
Abstract: No abstract text available
Text: STATE 01 G E SOLID DE J 3fl7SGÛl STATE 01E D011D42 11042 1 D J108-J110 N-Channel JFET Switch FEATURES APPLICATIONS • • • • • • • • Low Cost Automated Insertion Package Low Insertion Loss No Offset or Error Voltages Generated by Closed Switch
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D011D42
J108-J110
T--35
300ps;
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Untitled
Abstract: No abstract text available
Text: Intersil Hlgh-Rellablllty Products DG180-191 High Relid|Sfffy High- Speed Driver 0 \ 3P ^ With JFET Switch GENERAL DESCRIPTION FEATURES The DG180 thru DG191 series of analog'jfates consist of g^s 2 or 4 N-channel junction-type field-effect transistors JFET
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DG180-191
DG180
DG191
DG186/187/188
DG189/190/191
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U1899
Abstract: U1898 U1897 U1898-18 U1897-18 U1899-18
Text: G E SOLI» STATE □1 U1897-U1899 3875081 G E S O L ID DE [ 3675D51 0 □ 110 b E 7 | 0 IE STA TE 11062 D U1897-U1899 N-Channel JFET Switch FEATURES APPLICATIONS • Low Insertion L o ss • No Error or Offset Voltage Generated By Closed Switch • Analog Switches, Choppers
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3675D51
U1897-U1899
to-92
10sec)
350mW
U1897
U1898
U1899
300ps;
U1898-18
U1897-18
U1899-18
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Untitled
Abstract: No abstract text available
Text: G E SOLID STATE □1 DE | 3fl75Dfll DDllOMM S | 3875081 G E SOLID STATE 01E 11044 T - 3 D 7 ~ 2- 5“ n J174-J177 7 P-Channel JFET Switch «• APPLICATIONS Ê FEATURES • Analog Switches • Choppers • Commutators • Low Insertion Loss • No Offset or Error Generated By Closed Switch
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3fl75Dfll
J174-J177
-300/ts;
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55D8
Abstract: circuit diagram for je 182 g DG181 DG180 DG180-191 DG182 DG183 DG184 DG185 DG186
Text: Intersil Hlgh-Rellabllity Products DG180-191 U High Reltfnnfy High-Speed Driver qV ^ With JFET Switch GENERAL DESCRIPTION FEATURES The DG180 thru DG191 series of analoggates consist of 2 or 4 N-channel junction-type field-effect transistors JFET) designed to function as electronic switches. Level-shifting
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DG180-191
DG180
DG191
10MHz,
SPDT-DG186/187/188
DG186/187/188
DPST-DG183/184/185
DG183/184/185
DG189/190/191
55D8
circuit diagram for je 182 g
DG181
DG180-191
DG182
DG183
DG184
DG185
DG186
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2N545B
Abstract: 2N5457 2N5457-2N5459 2N5459 2N5458
Text: G E SOLID ~Ql STATE I F J 3Ö7S0Ö1 D G lD Tn N-Channel JFET General Purpose Amplifier/Switch PIN CONFIGURATION gt*7 ABSOLUTE MAXIMUM RATINGS T a = 25°C unless otherwise noted) Drain-Gate Voltage . 25V
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2N5457-2N5459
10sec)
310mW
630ms,
2N545B
2N5457
2N5457-2N5459
2N5459
2N5458
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4392
Abstract: 2N4393 2N4391-93 2N4392 4392 dl 2N4391 ITE4393 ITE4392
Text: 01 G E SOLI» STATE DE 13fl?50fll D01DT7Ô °ì | 3875081 G E SOLID STATE 01E 10978 S 2N4391- 2N4393, S ITE4391- ITE4393 T- 35 - 2.5 7 N-Channel JFET Switch « n + u fc ri ABSOLUTE MAXIMUM RATINGS FEATURES • rd s o n < 3 0 0 D (Ta = 25°C unless otherwise noted)
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3fl750fll
2N4391
-2N4393,
ITE4391-
ITE4393
2N4391)
100pA
10VAC
2N4392,
2N4393)
4392
2N4393
2N4391-93
2N4392
4392 dl
ITE4393
ITE4392
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ITE4391
Abstract: No abstract text available
Text: DI E SOLI» STATE DE 3fl750fll DD1D17S 1 | 3875081 G E SOLID STATE 2 N 4 3 9 1 -2 N 4 3 9 3 , IT E 4 3 9 1 -IT E 4 3 9 3 G 01E 10978 D 2N4391 - 2N 4393, ITE4391- ITE4393 & N-Channel JFET Switch FEATURES ABSOLUTE MAXIMUM RATINGS • rd5(on <300 Ohms (2N4391)
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3fl750fll
DD1D17S
2N4391
ITE4391-
ITE4393
2N4391)
100Pa
10VAC
2N4392,
2N4393)
ITE4391
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t1is
Abstract: U202 U200 U201 N-Channel JFET Switch
Text: SOLI» STATE □1 DE [ 3fl750fll 0D11DS5 01E 11052 D U200-U202 N-Channel JFET Switch FEATURES APPLICATIONS • Low Insertion Loss • Good OFF Isolation • Analog Switches • Commutators • Choppers PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted
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0D11DS5
oU200-U202
10seo)
10mW/Â
NOT150
300/i8,
t1is
U202
U200
U201
N-Channel JFET Switch
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3N170
Abstract: Hall 01E 3N171
Text: G Dl E SOLI» STATE DE I 307SDÛ1 D D l l G n 3875081 G E SOLID STATE 01E 11019 D 3 N1 7 0 , 3 N171 3N170, 3N171 N-Channel Enhancement Mode MOSFET Switch FEATURES HANDLING PRECAUTIONS • Low • Fast • Low • Low MOS field-effect transistors have extremely high input re
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3fi750fll
3N170,
3N171
3N170
3N170
Hall 01E
3N171
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