Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching
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UF630
O-220
O-220F
O-220F1
O-220F2
O-262
O-251
O-252
QW-R502-049
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UF630L-TM3-T
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET DESCRIPTION 1 1 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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UF630
O-220
O-220F
O-220F1
O-262
O-252
O-251
O-220
O-220F1
O-220F
UF630L-TM3-T
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UTC UF630L
Abstract: UF630L-TN3-R uf630 power mosfet TO-252 MOSFET p channel UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T
Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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UF630
UF630L
UF630-TA3-T
UF630L-TA3-T
QW-R502-049
UTC UF630L
UF630L-TN3-R
uf630 power mosfet
TO-252 MOSFET p channel
UF630
UF630L-TA3-T
UF630-TA3-T
UF630-TF3-T
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UF630L-TN3-R
Abstract: UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T
Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET 1 TO - 252 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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UF630
O-220
O-220F
UF630-TA3-T
UF630L-TA3-T
QW-R502-049
UF630L-TN3-R
UF630
UF630-TA3-T
UF630-TF3-T
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UF630L-TN3-R
Abstract: uf630 power mosfet UF630 UF630L-TA3-T
Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET 1 TO - 252 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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UF630
O-220
O-220F
UF630L-TA3-T
UF630G-TA3-Tt
QW-R502-049
UF630L-TN3-R
uf630 power mosfet
UF630
UF630L-TA3-T
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 9N40 Preliminary Power MOSFET 9A, 400V N-CHANNEL POWER MOSFET 1 The UTC 9N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a
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O-220
O-220F1
QW-R502-552
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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UF630
O-251
O-220
O-220F
O-220F1
O-252
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O-220F1
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20n50
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 20N50 Preliminary Power MOSFET 20A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N50 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and low leakage current,
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20N50
20N50
20N50L-T3P-T
20N50G-T3P-T
QW-R502-895
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 9N40 Preliminary Power MOSFET 9A, 400V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 9N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a
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O-220
O-220F1
QW-R502-552
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9N40
Abstract: 552 diode
Text: UNISONIC TECHNOLOGIES CO., LTD 9N40 Preliminary Power MOSFET 8.5 Amps, 400 Volts N-CHANNEL POWER MOSFET 1 The UTC 9N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a
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O-220
O-220F1
QW-R502-552
9N40
552 diode
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., UF630 MOSFET 9A, 200V, 0.4Ω , N-CHANNEL POWER MOSFETS DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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UF630
O-220
UF630L
UF630-TA3-T
QW-R502-049
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AN7254
Abstract: AN7260 AN9321 AN9322 HAF70009 TB334
Text: HAF70009 Data Sheet 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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HAF70009
AN7254
AN7260
AN9321
AN9322
HAF70009
TB334
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UTC UF630L
Abstract: 5V GATE TO SOURCE VOLTAGE MOSFET UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T
Text: UNISONIC TECHNOLOGIES CO., LTD UF630 MOSFET 9A, 200V, 0.4Ω , N-CHANNEL POWER MOSFETS 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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UF630
O-220
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UF630L
UF630-TA3-T
UF630L-TA3-T
QW-R502-049
UTC UF630L
5V GATE TO SOURCE VOLTAGE MOSFET
UF630
UF630L-TA3-T
UF630-TA3-T
UF630-TF3-T
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UTT6N10Z Power MOSFET 100V, 6A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT6N10Z is an N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed and ultra low
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UTT6N10Z
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OT-223
UTT6N10ZL-AA3-R
UTT6N10ZG-AA3-R
QW-R502-921,
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Untitled
Abstract: No abstract text available
Text: FAN73402 LED Backlight Driving Boost Switch Features Description • • The FAN73402 is a single-channel boost controller that integrates an N-channel power MOSFET for PWM dimming using Fairchild’s proprietary planar Doublediffused MOSFET DMOS technology.
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FAN73402
FAN73402
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UTT6N10Z Power MOSFET 100V, 6A N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-252 The UTC UTT6N10Z is an N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed and ultra low
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UTT6N10Z
O-252
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OT-223
UTT6N10ZG-AA3-R
UTT6N10ZL-TN3-R
UTT6N10ZG-TN3-R
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Untitled
Abstract: No abstract text available
Text: FDB42AN15A0_F085 N-Channel Power Trench MOSFET June 2013 FDB42AN15A0_F085 N-Channel Power Trench® MOSFET 150V, 35A, 42mΩ D D Features Typ rDS on = 30mΩ at VGS = 10V, ID = 12A Typ Qg(tot) = 78nC at VGS = 10V, ID = 12A G UIS Capability RoHS Compliant
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SSM1N45B
Abstract: No abstract text available
Text: SSM1N45B SSM1N45B 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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Untitled
Abstract: No abstract text available
Text: SSN1N45B SSN1N45B 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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Untitled
Abstract: No abstract text available
Text: SSM1N45B SSM1N45B 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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SSM1N45B
OT-223
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1N45B
Abstract: SSN1N45BTA SSN1N45B
Text: SSN1N45B SSN1N45B 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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1N45B
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SSN1N45B
Abstract: No abstract text available
Text: SSN1N45B SSN1N45B 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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SSN1N45B
O-92ner
SSN1N45B
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FQPF6N45
Abstract: No abstract text available
Text: QFET TM FQPF6N45 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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IRFZ44 equivalent
Abstract: H-bridge irlZ44 IRLR034 1155I DIODE 1N4148 .07V ttl to cmos converter 24v rectifier j8 gate drive for mosfet irfz44 IRFZ44 mosfet LTC1155
Text: LTC1155 Dual High Side Micropower MOSFET Driver U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1155 dual high side gate driver allows using low cost N-channel FETs for high side switching applications. An internal charge pump boosts the gate above the positive rail, fully enhancing an N-channel MOSFET with no
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LTC1155
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LTC1477
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1155fa
IRFZ44 equivalent
H-bridge irlZ44
IRLR034
1155I
DIODE 1N4148 .07V
ttl to cmos converter
24v rectifier j8
gate drive for mosfet irfz44
IRFZ44 mosfet
LTC1155
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