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    N-CHANNEL MOSFET 600V 7A Search Results

    N-CHANNEL MOSFET 600V 7A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL MOSFET 600V 7A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    b9nk60zd

    Abstract: p9nk60z N-Channel mosfet 600v 7A P9NK60ZD zener diode 3.0 b2 p9nk MOSFET IGSS 100A zener 600v zener diode 15v st 220 f1
    Text: STB9NK60ZD STF9NK60ZD - STP9NK60ZD N-channel 600V - 0.85Ω - 7A - D2PAK/TO-220FP/TO-220 SuperFREDMesh Power MOSFET General features Type VDSS RDS on ID Pw STB9NK60ZD 600V <0.95Ω 7A 125W STF9NK60ZD 600V <0.95Ω 7A 30W STP9NK60ZD 600V <0.95Ω 7A 125W


    Original     		PDF STB9NK60ZD STF9NK60ZD STP9NK60ZD D2PAK/TO-220FP/TO-220 STF9NK60ZD O-220FP O-220 b9nk60zd p9nk60z N-Channel mosfet 600v 7A P9NK60ZD zener diode 3.0 b2 p9nk MOSFET IGSS 100A zener 600v zener diode 15v st 220 f1

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching


    Original     		PDF 7N60A 7N60A VQW-R502-111

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching


    Original     		PDF 7N60A 7N60A VQW-R502-111

    7A600V

    Abstract: DB-186 195mH
    Text: TAK CHEONG N-Channel Power MOSFET 7A, 600V, 1.2Ω 1 = Gate 2 = Drain 3 = Source GENERAL DESCRIPTION The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced


    Original     		PDF O-220AB DB-100 7A600V DB-186 195mH

    Untitled

    Abstract: No abstract text available
    Text: TAK CHEONG N-Channel Power MOSFET 7A, 600V, 1.2Ω GENERAL DESCRIPTION The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state


    Original     		PDF O-220FP DB-100

    mosfet 600V 7A N-CHANNEL

    Abstract: DB-199 DB199
    Text: TAK CHEONG N-Channel Power MOSFET 7A, 600V, 1.2Ω 1 = Gate 2 = Drain 3 = Source 1 GENERAL DESCRIPTION 2 The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced


    Original     		PDF O-220FP DB-100 mosfet 600V 7A N-CHANNEL DB-199 DB199

    SVD7N60F

    Abstract: TO-220F-3L
    Text: SVD7N60T/SVD7N60F 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’ s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored


    Original     		PDF SVD7N60T/SVD7N60F SVD7N60T O-220-3L 50Unit/Totes: O-220F-3L SVD7N60F TO-220F-3L

    MOSFET 600V 7A

    Abstract: mosfet 600V 7A N-CHANNEL A11 MARKING TSM7N60 10SEC MOSFET A11 A11 MARKING CODE
    Text: TSM7N60 600V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 1.2 @ VGS =10V 3.5 General Description The TSM7N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM7N60 ITO-220 O-220 TSM7N60 MOSFET 600V 7A mosfet 600V 7A N-CHANNEL A11 MARKING 10SEC MOSFET A11 A11 MARKING CODE

    AOT7N60

    Abstract: mosfet 600V 7A N-CHANNEL AOT12N60 AOTF12N60 AOTF7N60
    Text: AOT7N60/AOTF7N60 600V, 7A N-Channel MOSFET General Description Features The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT7N60/AOTF7N60 AOT7N60 AOTF7N60 O-220 O-220F AOTF7N60 AOT7N60 mosfet 600V 7A N-CHANNEL AOT12N60 AOTF12N60

    SSF7N60A

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFET SSF7N60A FEATURES BVDSS = 600V • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA Max. @ VDS = 600V


    Original     		PDF SSF7N60A SSF7N60A

    mosfet 600V 7A N-CHANNEL

    Abstract: AOT4N60 AOT7N60 AOTF7N60
    Text: AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT7N60/AOTF7N60 AOT7N60 AOTF7N60 O-220 O-220F mosfet 600V 7A N-CHANNEL AOT4N60 AOT7N60

    MOSFET 600V 7A

    Abstract: BLV7N60
    Text: BLV7N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 1.0Ω Ω • Simple Drive Requirements ID 7A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.


    Original     		PDF BLV7N60 MOSFET 600V 7A BLV7N60

    Untitled

    Abstract: No abstract text available
    Text: AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT7N60/AOTF7N60 AOT7N60 AOTF7N60 AOT7N60L AOTF7N60L O-220 O-220F

    AOTF7N60L

    Abstract: AOTF7N60 AOT7N60
    Text: AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT7N60/AOTF7N60 AOT7N60 AOTF7N60 AOT7N60L AOTF7N60L O-220 O-220F AOTF7N60L AOT7N60

    Untitled

    Abstract: No abstract text available
    Text: BLV7N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 1.0Ω Ω • Simple Drive Requirements ID 7A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.


    Original     		PDF BLV7N60

    Untitled

    Abstract: No abstract text available
    Text: AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT7N60/AOTF7N60 AOT7N60 AOTF7N60 AOT7N60L AOTF7N60L

    Untitled

    Abstract: No abstract text available
    Text: AOD7N60/AOI7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOD7N60 & AOI7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOD7N60/AOI7N60 AOD7N60 AOI7N60 19ABA

    N-Channel mosfet 600v 7A

    Abstract: mosfet 600V 7A N-CHANNEL BLV7N60
    Text: BLV7N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 1.0Ω Ω • Simple Drive Requirements ID 7A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.


    Original     		PDF BLV7N60 N-Channel mosfet 600v 7A mosfet 600V 7A N-CHANNEL BLV7N60

    mosfet 600V 7A N-CHANNEL

    Abstract: BLV7N60
    Text: BLV7N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 1.0Ω Ω • Simple Drive Requirements ID 7A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.


    Original     		PDF BLV7N60 mosfet 600V 7A N-CHANNEL BLV7N60

    Untitled

    Abstract: No abstract text available
    Text: AOD7N60/AOI7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOD7N60 & AOI7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOD7N60/AOI7N60 AOD7N60 AOI7N60 O251A AOI7N60

    Untitled

    Abstract: No abstract text available
    Text: AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT7N60/AOTF7N60 AOT7N60 AOTF7N60 O-220 O-220F

    p7n60

    Abstract: F7N60 m2828 n60p ga 132
    Text: PJP7N60 / PJF7N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 7A , 600V, RDS ON =1.2Ω@VGS=10V, ID=3.5A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current


    Original     		PDF PJP7N60 PJF7N60 O-220AB ITO-220AB O-220AB 2002/95/EC ITO-220AB MIL-STD-750 p7n60 F7N60 m2828 n60p ga 132

    MOSFET 600V 7A

    Abstract: mosfet 600V 7A N-CHANNEL N-Channel mosfet 600v 7A mosfet 600v transistor Electronic ballast mosfet 600V 7A N-CHANNEL TO N-Channel 600V MOSFET n-channel mosfet transistor ITO-220 MOSFET 600V switching
    Text: Preliminary TSM7N60 600V N-Channel Power MOSFET ITO-220 TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 600 1.2 @ VGS =10V 3.5 General Description The TSM7N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM7N60 ITO-220 O-220 TSM7N60 MOSFET 600V 7A mosfet 600V 7A N-CHANNEL N-Channel mosfet 600v 7A mosfet 600v transistor Electronic ballast mosfet 600V 7A N-CHANNEL TO N-Channel 600V MOSFET n-channel mosfet transistor ITO-220 MOSFET 600V switching

    Untitled

    Abstract: No abstract text available
    Text: AOTF7T60 600V,7A N-Channel MOSFET General Description Product Summary The AOTF7T60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along


    Original     		PDF AOTF7T60 AOTF7T60 AOTF7T60L O-220F