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    N-CHANNEL MOSFET 400V 25A Search Results

    N-CHANNEL MOSFET 400V 25A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK5R3E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL MOSFET 400V 25A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFP360

    Abstract: TB334
    Text: IRFP360 Data Sheet January 2002 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field


    Original     		PDF IRFP360 O-247 IRFP360 TB334

    irfp360

    Abstract: TB334
    Text: IRFP360 Data Sheet July 1999 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field


    Original     		PDF IRFP360 O-247 irfp360 TB334

    IRF360

    Abstract: No abstract text available
    Text: PD - 90518 IRF360 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF360 400V 0.20Ω ID 25A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRF360 O-204AA/AE) IRF360

    IRF360

    Abstract: IRF3601 mosfet irf360
    Text: PD - 90518 IRF360 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF360 400V 0.20Ω ID 25A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRF360 O-204AA/AE) IRF360 IRF3601 mosfet irf360

    BT 13A

    Abstract: IRFP360
    Text: IRFP360 Data Sheet Title FP3 bt A, 0V, 00 m, an- 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET Features This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are


    Original     		PDF IRFP360 TA17464. BT 13A IRFP360

    IRF P CHANNEL MOSFET 200V 20A

    Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
    Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω


    Original     		PDF RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    mosfet 500v 10A

    Abstract: FL14KM-10A
    Text: MITSUBISHI POWER MOSFET RY FL14KM-10A INA ELIM on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som PR HIGH-SPEED SWITCHING USE Nch POWER MOSFET FL14KM-10A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3


    Original     		PDF FL14KM-10A mosfet 500v 10A FL14KM-10A

    FL14KM-10A

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    IR2153Z

    Abstract: ir2153
    Text: PD-60024D IR2125Z CURRENT LIMITING SINGLE CHANNEL DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 12 to 18V n Undervoltage lockout


    Original     		PDF PD-60024D IR2125Z 230mV 150ns IR2125Z MO-036AA IR2153Z IR2153Z ir2153

    IR2125Z

    Abstract: No abstract text available
    Text: Data Sheet No. PD-6.024A IR2125Z CURRENT LIMITING SINGLE CHANNEL DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 12 to 18V n Undervoltage lockout


    Original     		PDF IR2125Z IR2125Z MO-036AA

    ISL8240

    Abstract: ISL6840 ISL21060
    Text: P WERING INFRASTRUCTURE Telecom/Datacom, Wired Networks and Data Storage P WERING INFRASTRUCTURE The increased amount of data and video all of which can be configured using Intersil’s being transmitted via the cloud has placed PowerNavigator — the industry’s most


    Original     		PDF LC-113 ISL8240 ISL6840 ISL21060

    IGBT 500V 35A

    Abstract: IR2125Z MO-036aa
    Text: PD - 60024B IR2125Z CURRENT LIMITING SINGLE CHANNEL DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 12 to 18V n Undervoltage lockout


    Original     		PDF 60024B IR2125Z IR2125Z IGBT 500V 35A MO-036aa

    IR2125Z

    Abstract: IR2153Z
    Text: PD - 60024C IR2125Z CURRENT LIMITING SINGLE CHANNEL DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 12 to 18V n Undervoltage lockout


    Original     		PDF 60024C IR2125Z IR2125Z MO-036AA IR2153Z IR2153Z

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


    Original     		PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415

    IJW120R070T1

    Abstract: IJW120R silicon carbide
    Text: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R070T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R070T1 Description


    Original     		PDF IJW120R070T1 IJW120R070T1 IJW120R silicon carbide

    FL14KM-10A

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    TV flyback transformer pinout

    Abstract: xbox schematic diagram xbox power supply schematic diagram ncp1207 smd transformer less power supply 12 volt 3A 600 volt mosfet TRANSISTOR SMD C22B SMD ZENER DIODE 26b NCP1337 TV flyback transformer
    Text: TND334/D Rev. 2, JUN − 2009 50 W Four−Output Internal Power Supply for Set Top Box Reference Design Documentation Package Semiconductor Components Industries, LLC, 2009 June, 2009 − Rev. 2 1 Publication Order Number: TND334/D Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes


    Original     		PDF TND334/D TV flyback transformer pinout xbox schematic diagram xbox power supply schematic diagram ncp1207 smd transformer less power supply 12 volt 3A 600 volt mosfet TRANSISTOR SMD C22B SMD ZENER DIODE 26b NCP1337 TV flyback transformer

    relay finder 45.61

    Abstract: reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415
    Text: 2295 Technical portal and online community for Design Engineers - www.element-14.com Relays & Solenoids Page 2343 2336 2310 2347 2298 2320 2346 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 Safety10 A331-1-C2A7M A331-1-C2-A73 24Vdc 110Vac 240Vac A331-1-C2-A7D relay finder 45.61 reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415

    irfp360

    Abstract: No abstract text available
    Text: IRFP360 S e m iconductor Data Sheet July 1999 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field


    OCR Scan     		PDF IRFP360 O-247 D4-345 irfp360

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT G Â T A I 1 N~CHANNEL ENHANCEMENT MOS FET 400V, 150A. 0.035D SDF150NA40 HE FEATURES • RUGGED PACKAGE • H I - R E L CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS • LOW IR LOSSES • LOW THERMAL RESISTANCE


    OCR Scan     		PDF SDF150NA40 MIL-STD-883 300kS.

    2N6792 JANTX

    Abstract: 2N6792 2n6800 C055 LH0063 QPL-19500 2N6904
    Text: Standard Power MOSFETs File N u m be r 1901 2N6792 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 2 A, 400V T oS lon = 1 80 N-CHANNEL ENHANCEMENT MODE D Features: • SOA is power-dissipation limited m Nanosecond switching speeds


    OCR Scan     		PDF 2N6792 2N6792 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6792 JANTX C055 LH0063 QPL-19500 2N6904

    irf440

    Abstract: No abstract text available
    Text: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t


    OCR Scan     		PDF IRF9140 IRF9230 IRF9240 irf440

    LT812

    Abstract: No abstract text available
    Text: UN IT RO DE CORP 9347963 TE ¿ F | cî 3M7cib3 U N I T R O D E CORP 92D 10554 GD1DSSM D POWER MOSFET TRANSISTORS 4 0 0 V olt, 1 .8 O h m N -Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability


    OCR Scan     		PDF