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    N-CHANNEL MOS FET 4 V GATE Search Results

    N-CHANNEL MOS FET 4 V GATE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL MOS FET 4 V GATE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4AM12

    Abstract: SP-10 Hitachi DSA0046
    Text: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 , VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.12 , VGS = –10 V, I D = –4 A • Capable of 4 V gate drive


    Original     		PDF 4AM12 SP-10 4AM12 SP-10 Hitachi DSA0046

    2SK2515

    Abstract: IEI-1213 MEI-1202 MF-1134 MP-88
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2515 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2515 is N-Channel MOS Field Effect Transistor designed in millimeter for high current switching applications. RDS (on)2 = 14 mΩ (VGS = 4 V, ID = 25 A)


    Original     		PDF 2SK2515 2SK2515 IEI-1213 MEI-1202 MF-1134 MP-88

    nec 2sk2511

    Abstract: transistor 2SK2511 2SK2511 IEI-1213 MEI-1202 MF-1134 MP-88
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2511 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2511 is N-Channel MOS Field Effect Transistor designed in millimeter for high current switching applications. RDS (on)2 = 40 mΩ (VGS = 4 V, ID = 20 A)


    Original     		PDF 2SK2511 2SK2511 nec 2sk2511 transistor 2SK2511 IEI-1213 MEI-1202 MF-1134 MP-88

    Hitachi DSA002723

    Abstract: No abstract text available
    Text: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 , VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.2 , VGS = –10 V, I D = –4 A • Capable of 4 V gate drive


    Original     		PDF 6AM12 SP-12TA Hitachi DSA002723

    Hitachi DSA002727

    Abstract: No abstract text available
    Text: 4AM14 Silicon N-Channel/P-Channel Complementary Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 , VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.2 , VGS = –10 V, I D = –4 A • Capable of 4 V gate drive


    Original     		PDF 4AM14 SP-12TA Hitachi DSA002727

    2SJ173

    Abstract: 2SJ176 2SK1094 2SK971 4AM12 Hitachi 2SJ Hitachi DSA00305
    Text: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 Ω, VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.12 Ω, VGS = –10 V, I D = –4 A • Capable of 4 V gate drive


    Original     		PDF 4AM12 2SK971, 2SK1094 2SJ173, 2SJ176 2SJ173 2SJ176 2SK1094 2SK971 4AM12 Hitachi 2SJ Hitachi DSA00305

    Hitachi 2SJ

    Abstract: Hitachi DSA002751
    Text: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 Ω, VGS = 10 V, ID = 4 A P-channel: RDS(on) ≤ 0.12 Ω, VGS = –10 V, ID = –4 A • Capable of 4 V gate drive


    Original     		PDF 4AM12 2SK971, 2SK1094 2SJ173, 2SJ176 SP-10 D-85622 Hitachi 2SJ Hitachi DSA002751

    Hitachi DSA002724

    Abstract: No abstract text available
    Text: 4AM11 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 , VGS = 10 V, I D = 2.5 A P-channel: RDS(on) ≤ 0.2 , VGS = –10 V, I D = –2.5 A • Capable of 4 V gate drive


    Original     		PDF 4AM11 SP-10 Hitachi DSA002724

    4AM13

    Abstract: SP-10 Hitachi DSA0046
    Text: 4AM13 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.4 , VGS = 10 V, I D = 1.5 A P-channel: RDS(on) ≤ 0.45 , VGS = –10 V, I D = –1.5 A • Capable of 4 V gate drive


    Original     		PDF 4AM13 SP-10 4AM13 SP-10 Hitachi DSA0046

    2SK2414

    Abstract: 2SK2414-Z IEI-1213 MEI-1202 MF-1134 TEA-1037 TC249
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2414, 2SK2414-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2414 is N-Channel MOS Field Effect Transistor de- PACKAGE DIMENSIONS in millimeter 5.0 ±0.2 FEATURES 1 2 3 RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)


    Original     		PDF 2SK2414, 2SK2414-Z 2SK2414 2SK2414-Z IEI-1213 MEI-1202 MF-1134 TEA-1037 TC249

    d1308

    Abstract: d1297 2SK2414 2SK2414-Z C10535E C10943X C11531E MEI-1202 2SK2414Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2414, 2SK2414-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2414 is N-Channel MOS Field Effect Transistor designed PACKAGE DIMENSIONS in millimeter 5.0 ±0.2 FEATURES 1 2 3 RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)


    Original     		PDF 2SK2414, 2SK2414-Z 2SK2414 d1308 d1297 2SK2414-Z C10535E C10943X C11531E MEI-1202 2SK2414Z

    IC-3328

    Abstract: *PA1520H JUPA1520 MEI-1202 TEB-1035 MOS FET Array
    Text: N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION PACKAGE DIMENSIONS The juPA1520 is N-channel Power MOS FET Array that built in 4 in millimeters circuits designed for solenoid, m otor and lamp driver. 26.8 MAX. 4.0 FEATURES • 4 V driving is possible


    OCR Scan     		PDF uPA1520 10-Pin JiPA1520H IC-3328 *PA1520H JUPA1520 MEI-1202 TEB-1035 MOS FET Array

    TEA-1035

    Abstract: IC-3345 UPA1552 UPA1552H MEI-1202 nec li ion
    Text: N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION The juPA1552 is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. FEATURES • 4 V driving is possible • Large Current and Low On-state Resistance


    OCR Scan     		PDF uPA1552 PA1552H IEI-1209) TEA-1035 IC-3345 UPA1552H MEI-1202 nec li ion

    PA1556A

    Abstract: No abstract text available
    Text: 1 DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR fiPA1556A N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION The /iPA1556A is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. FEATURES • 4 V driving is possible


    OCR Scan     		PDF fiPA1556A /iPA1556A PA1556AH IEI-1209) PA1556A PA1556A

    uPA1556

    Abstract: TEA-1035 tea1035 nec 556 pa1556 TEA1034 TEA-1034 NEC motor MEI-1202 PA1556H
    Text: N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION PACKAGE DIMENSION The ¿¿PA1556 is N-channel Power MOS FET A rra y th a t b uilt in 4 circuits designed fo r solenoid, m oto r and lamp driver. in millimeters .4.0 FEATURES • 4 V driving is possible


    OCR Scan     		PDF uPA1556 juPA1556H IEI-1209) TEA-1035 tea1035 nec 556 pa1556 TEA1034 TEA-1034 NEC motor MEI-1202 PA1556H

    PA1552AH

    Abstract: PA1552 IC-3346 uPA1552A MEI-1202 TEA-1035 a1034
    Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR uPA1552A N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION The j«PA1552A is N-channel Power MOS FET A rray that b u ilt in 4 circuits designed fo r solenoid, m otor and lamp driver. FEATURES • 4 V driving is possible


    OCR Scan     		PDF jUPA1552A //PA1552AH IEI-1209) PA1552AH PA1552 IC-3346 uPA1552A MEI-1202 TEA-1035 a1034

    transistor CD 910

    Abstract: IC-3359 MEI-1202 A1034 MOS FET Array
    Text: N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION The /xPA1570 is N-channel Power MOS FET A rra y th a t b uilt in 4 circuits designed for solenoid, m otor and lamp driver. FEATURES • 4 V driving is possible • Large Current and Low On-state Resistance


    OCR Scan     		PDF uPA1570 PA1570H IEI-1209) transistor CD 910 IC-3359 MEI-1202 A1034 MOS FET Array

    Untitled

    Abstract: No abstract text available
    Text: 4AM14 Silicon N-Channel/P-Channel Complementary Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N-channel: RDS l nl < 0.17 Q, Vos = 10 V, ID = 4 A P-channel: RDS(on) < 0.2 Q, Vos = -1 0 V, ID = -4 A • Capable of 4 V gate drive


    OCR Scan     		PDF 4AM14 2SK970 O-220AB) 2SK1093 O-220FM) 2SJI72 2SJ175

    Untitled

    Abstract: No abstract text available
    Text: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N-channel: RDS on| < 0.075 Q, VGS = 10 V, ID = 4 A P-channel: RDS(im < 0.! 2 O, V GS = - 1 0 V, ID = - 4 A • Capable o f 4 V gate drive


    OCR Scan     		PDF 4AM12 2SJ173

    lf7a

    Abstract: No abstract text available
    Text: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N-channel: RDS on < 0.17 SI, VGS = 10 V, ID= 4 A P-channel: RDS(,m) < 0.2 £2, VGS = -1 0 V, ID= -4 A • Capable of 4 V gate drive


    OCR Scan     		PDF 6AM12 2SK970 O-220AB) 2SK1093 O-220FM) 2SJ172 2SJ175 lf7a

    mos n fet e

    Abstract: No abstract text available
    Text: DATA SHEET NEC / M O S FIELD EFFECT TRAN SISTO R _ 2 S K 1 4 8 5 N-CHANNEL MOS FET FOR SW ITCHING PACKAGE DIMENSIONS U n it : mm The 2SK1485, N-channel vertical type MOS FET, is a switching device which can be driven directly by the output o f fCs having a 5 V


    OCR Scan     		PDF 2SK1485 2SK1485, 2SJ199 mos n fet e

    IC-3360

    Abstract: PA1572 UPA1572H MEI-1202 PA1572H TEA-1035 MOS FET Array TEA1035
    Text: N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION The /¿PA1572 is N-channe! Power MOS FET A rray th a t b uilt in 4 circuits designed fo r solenoid, m otor and lamp driver. FEATURES • 4 V driving is possible • Large Current and Low On-state Resistance


    OCR Scan     		PDF uPA1572 PA1572H IEi-1209) IC-3360 PA1572 UPA1572H MEI-1202 TEA-1035 MOS FET Array TEA1035

    Untitled

    Abstract: No abstract text available
    Text: 4AM16 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI Application High speed power switching Features • L ow on-resistance N Channel: RDS on>< 0.17 i i , V GS = 10 V, ID = 4 A P Channel: RDS(on < 0.2 Q , V GS = - 10 V, ID = - 4 A • High speed switching


    OCR Scan     		PDF 4AM16

    S10ms

    Abstract: 2SJ184 2SK1398 T100 T200 TC-7645A
    Text: MOS FIELD EFFECT TRANSISTOR 2SJ184 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ184, P-channel vertical type MOS FET, is a switching device OUTLINE DIMENSIONS U n it: mm 2.0 ± 0.2 4.0±0.2 o -H o 4 -0 .5 0 FEATURES Ft IO ö 0.45 w hich can be driven by 2.5 V power supply.


    OCR Scan     		PDF 2SJ184 2SJ184, S10ms 2SJ184 2SK1398 T100 T200 TC-7645A