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    N-CHANNEL LOGIC LEVEL MOSFETS Search Results

    N-CHANNEL LOGIC LEVEL MOSFETS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL LOGIC LEVEL MOSFETS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: tm FDS6898AZ_F085 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored


    Original     		PDF FDS6898AZ

    FDS6898AZ-F085

    Abstract: FDS6898AZ
    Text: FDS6898AZ_F085 tm Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored


    Original     		PDF FDS6898AZ FDS6898AZ-F085

    Untitled

    Abstract: No abstract text available
    Text: October 1998 FDS6930A Dual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state


    Original     		PDF FDS6930A OT-23 SOIC-16

    6912A Datasheet

    Abstract: 6912A FDS6912A SOIC-16
    Text: June 1998 FDS6912A Dual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state


    Original     		PDF FDS6912A OT-23 FDS6912A 6912A Datasheet 6912A SOIC-16

    6912A Datasheet

    Abstract: FDS6912A SOIC-16
    Text: June 1998 FDS6912A Dual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state


    Original     		PDF FDS6912A OT-23 6912A Datasheet FDS6912A SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: April 1999 FDS6961A Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state


    Original     		PDF FDS6961A OT-23

    6930A

    Abstract: FDS6930A SOIC-16
    Text: October 1998 FDS6930A Dual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state


    Original     		PDF FDS6930A OT-23 SOIC-16 OT-223 6930A FDS6930A SOIC-16

    6961A

    Abstract: FDS6961A SOIC-16
    Text: April 1999 FDS6961A Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state


    Original     		PDF FDS6961A OT-23 6961A FDS6961A SOIC-16

    F011

    Abstract: F63TNR F852 FDS6961A L86Z SOIC-16
    Text: April 1999 FDS6961A Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state


    Original     		PDF FDS6961A OT-23 F011 F63TNR F852 FDS6961A L86Z SOIC-16

    6930A

    Abstract: F011 F63TNR F852 FDS6930A L86Z SOIC-16
    Text: October 1998 FDS6930A Dual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state


    Original     		PDF FDS6930A OT-23 SOIC-16 OT-223 6930A F011 F63TNR F852 FDS6930A L86Z SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: January 2001 Si4920DY Dual N-Channel, Logic Level, PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state


    Original     		PDF Si4920DY OT-23

    FDS6990A

    Abstract: SOIC-16
    Text: October 2002 FDS6990A Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state


    Original     		PDF FDS6990A OT-23 SOIC-16 OT-223 FDS6990A SOIC-16

    Si4920DY

    Abstract: SOIC-16
    Text: January 2001 Si4920DY Dual N-Channel, Logic Level, PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state


    Original     		PDF Si4920DY OT-23 SOIC-16

    AN7254

    Abstract: AN7260 RFL1N12L RFL1N15L
    Text: [ /Title RFL1N 12L, RFL1N1 5L /Subject (1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, Logic Level, N-Channel Power MOSFETs, TO205AF) RFL1N12L, RFL1N15L Semiconductor 1A, 120V and 150V, 1.900 Ohm,


    Original     		PDF O205AF) RFL1N12L, RFL1N15L RFL1N12L O-205AF AN7254 AN7260. AN7260 RFL1N12L RFL1N15L

    HUF76107P3

    Abstract: AN7260 AN7254 AN9321 AN9322 TB334 TC298
    Text: HUF76107P3 Data Sheet December 2001 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		PDF HUF76107P3 HUF76107P3 AN7260 AN7254 AN9321 AN9322 TB334 TC298

    F011

    Abstract: F63TNR F852 FDS6990A L86Z SOIC-16
    Text: June 1999 FDS6990A Dual N-Channel Logic Level PowerTrenchΤΜ MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state


    Original     		PDF FDS6990A OT-23 SOIC-16 OT-223 F011 F63TNR F852 FDS6990A L86Z SOIC-16

    HUF76107P3

    Abstract: AN7254 AN7260 AN9321 AN9322 TB334 TC298
    Text: HUF76107P3 Data Sheet January 2003 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		PDF HUF76107P3 HUF76107P3 AN7254 AN7260 AN9321 AN9322 TB334 TC298

    Untitled

    Abstract: No abstract text available
    Text: June 1999 FDS6990A Dual N-Channel Logic Level PowerTrenchΤΜ MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state


    Original     		PDF FDS6990A OT-23

    TC298

    Abstract: No abstract text available
    Text: HUF76107P3 Data Sheet October 1999 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Ordering Information PART NUMBER HUF76107P3 PACKAGE TO-220AB 4382.5 Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using


    Original     		PDF HUF76107P3 TC298

    FDS6961AZ

    Abstract: oc810
    Text: FDS6961AZ Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		PDF FDS6961AZ FDS6961AZ oc810

    FDN361BN

    Abstract: No abstract text available
    Text: FDN361BN 30V N-Channel, Logic Level, PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		PDF FDN361BN OT-23 FDN361BN

    F10N15L

    Abstract: F10N12L RCA SOLID STATE F10N12L F10N12 RFM10N15L F10N15 RFP10N15L RFM10N12L RFP10N12L TA9530
    Text: 387 5081 G E SOLID STATE 01 DE | 3A75Dfil Q01fll4M4 1 1 T'37 Logic-Level Power MOSFETs _ :_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L F ile N u m b e r 1559 Power Logic Level MOSFETs N-Channel Logic Level


    OCR Scan     		PDF 3fl75Dfil RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L RFM10N12L RFM10N15L RFP10N12L RFP10N15L* F10N15L F10N12L RCA SOLID STATE F10N12L F10N12 F10N15 TA9530

    F10N12L

    Abstract: F10N15L 10N15L F10N12 RFP10N15L F10N15 RFP10N12L 10n15 RFM10N12L RFM10N15L
    Text: Logic-Level Power MOSFETs_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L File N u m be r 1559 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINAL DIAGRAM 10 A, 120 V — 150 V rDsioni: 0.3 f)


    OCR Scan     		PDF RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L 92CS-3374I RFM10N12L RFM10N15L RFP10N12L RFP10N15L* F10N12L F10N15L 10N15L F10N12 RFP10N15L F10N15 10n15

    F15N05L

    Abstract: F15N06L f15n05 RFP15N05L f15n RFM15N05L RFP15N06L RFM15N06L rca application notes RCA bipolar transistors
    Text: Logic-Level Power MOSFETs File N u m be r 1558 RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET t e r m in a l d ia g r a m


    OCR Scan     		PDF RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L RFM15N05L RFM15N06L RFP15N05L RFP15N06L* 92CS-38IS0 F15N05L F15N06L f15n05 f15n RFP15N06L rca application notes RCA bipolar transistors