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    N-CHANNEL DEPLETION MOSFETS Search Results

    N-CHANNEL DEPLETION MOSFETS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL DEPLETION MOSFETS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ALD110900

    Abstract: depletion MOSFET n channel depletion MOSFET N-Channel Depletion-Mode MOSFET N-Channel Depletion-Mode MOSFET high voltage ultra low igss pA ALD110800 ALD114804 ALD114813 ALD114813PCL
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD114813/ALD114913 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® VGS th = -1.30V MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114813/ALD114913 are monolithic quad/dual depletion mode N-Channel


    Original     		PDF ALD114813/ALD114913 ALD114813/ALD114913 ALD110900 depletion MOSFET n channel depletion MOSFET N-Channel Depletion-Mode MOSFET N-Channel Depletion-Mode MOSFET high voltage ultra low igss pA ALD110800 ALD114804 ALD114813 ALD114813PCL

    ultra low igss pA

    Abstract: ALD110800 depletion MOSFET Depletion-Mode MOSFET N-Channel Depletion-Mode MOSFET ALD114804 ALD114835 ALD114835PCL ALD114835SCL ALD114935
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD114835/ALD114935 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® VGS th = -3.50V MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114835/ALD114935 are monolithic quad/dual depletion mode N-Channel


    Original     		PDF ALD114835/ALD114935 ALD114835/ALD114935 ultra low igss pA ALD110800 depletion MOSFET Depletion-Mode MOSFET N-Channel Depletion-Mode MOSFET ALD114804 ALD114835 ALD114835PCL ALD114835SCL ALD114935

    nchannel

    Abstract: DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 n-channel
    Text: Chapter 8 – Depletion Mode MOSFETs DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 N-Channel; 300V; 12Ω N-Channel; 350V; 25Ω N-Channel; 400V; 25Ω N-Channel; 240V; 4Ω N-Channel; 400V; 6.0Ω N-Channel; 500V; 1.0KΩ N-Channel; 500V; 1.0KΩ


    Original     		PDF DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 nchannel DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 n-channel

    d2625

    Abstract: MD2130 ultrasonic piezoelectric transducer driver DN2625K6-G B0521 125OC DN2625 DN2625K4-G "thermal via" PCB D-PAK DN2625DK6-G
    Text: Supertex inc. DN2625 N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options Features General Description ► ► ► ► ► ► The Supertex DN2625 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS


    Original     		PDF DN2625 DN2625 DSFP-DN2625 B052110 d2625 MD2130 ultrasonic piezoelectric transducer driver DN2625K6-G B0521 125OC DN2625K4-G "thermal via" PCB D-PAK DN2625DK6-G

    Untitled

    Abstract: No abstract text available
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD114835/ALD114935 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® VGS th = -3.50V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114835/ALD114935 are high precision monolithic quad/dual depletion mode


    Original     		PDF ALD114835/ALD114935 ALD114835 ALD114835/ALD114935

    Untitled

    Abstract: No abstract text available
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD114813/ALD114913 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® VGS th = -1.30V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114813/ALD114913 are high precision monolithic quad/dual depletion mode


    Original     		PDF ALD114813/ALD114913 ALD114813/ALD114913

    Untitled

    Abstract: No abstract text available
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD114813/ALD114913 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® VGS th = -1.30V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114813/ALD114913 are high precision monolithic quad/dual depletion mode


    Original     		PDF ALD114813/ALD114913 ALD114813/ALD114913

    IXTA02N100D2

    Abstract: depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2
    Text: Depletion-Mode Power MOSFETs and Applications Abdus Sattar, IXYS Corporation Applications like constant current sources, solid-state relays, telecom switches and high voltage DC lines in power systems require N-channel Depletion-mode power MOSFET that operates as a normally “on” switch when the gate-to-source voltage is zero VGS=0V .


    Original     		PDF AN-D16, IXTA02N100D2 depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2

    5V 8pin relay

    Abstract: depletion MOSFET ALD114813 ALD114813PC ALD114813SC ALD114913 ALD114913PA ALD114913SA
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD114813/ALD114913 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® MATCHED PAIR MOSFET ARRAYS VGS th = -1.3V GENERAL DESCRIPTION APPLICATIONS ALD114813/ALD114913 are monolithic quad/dual N-Channel MOSFETS matched


    Original     		PDF ALD114813/ALD114913 ALD114813/ALD114913 100KHz 5V 8pin relay depletion MOSFET ALD114813 ALD114813PC ALD114813SC ALD114913 ALD114913PA ALD114913SA

    D2625

    Abstract: DN2625K4-G DN2625K6-G MD2130 125OC DN2625 DN2625DK6-G "thermal via" PCB D-PAK K1 transistor array
    Text: DN2625 N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options Features General Description ► ► ► ► ► ► The Supertex DN2625 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF DN2625 DN2625 DSFP-DN2625 A092409 D2625 DN2625K4-G DN2625K6-G MD2130 125OC DN2625DK6-G "thermal via" PCB D-PAK K1 transistor array

    K614

    Abstract: top mark 0506
    Text: DN2625 N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options Features General Description ► ► ► ► ► ► The Supertex DN2625 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF DN2625 MD2130 DSFP-DN2625 A121908 K614 top mark 0506

    d2625

    Abstract: ultrasonic piezoelectric transducer driver ultrasonic transducer circuit ultrasound piezoelectric design datasheet DN2625DK6 mos fet marking k4 tip 222 TRANSISTOR Ultrasonic Transducer application notes DN2625 DN2625K4-G
    Text: DN2625 N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options Features General Description ► ► ► ► ► ► The Supertex DN2625 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF DN2625 DN2625 DSFP-DN2625 A041409 d2625 ultrasonic piezoelectric transducer driver ultrasonic transducer circuit ultrasound piezoelectric design datasheet DN2625DK6 mos fet marking k4 tip 222 TRANSISTOR Ultrasonic Transducer application notes DN2625K4-G

    DFN S2

    Abstract: No abstract text available
    Text: DN2625 N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options Features General Description ► ► ► ► ► ► The Supertex DN2625 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF DN2625 MD2130 DSFP-DN2625 A112508 DFN S2

    depletion mode power mosfet

    Abstract: depletion MOSFET ALD114835 ALD114835PC ALD114835SC ALD114935 ALD114935PA ALD114935SA
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD114835/ALD114935 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® VGS th = -3.5V MATCHED PAIR MOSFET ARRAYS GENERAL DESCRIPTION APPLICATIONS ALD114835/ALD114935 are monolithic quad/dual N-Channel MOSFETs matched at the factory using ALD’s proven EPAD CMOS technology. These


    Original     		PDF ALD114835/ALD114935 ALD114835/ALD114935 100KHz depletion mode power mosfet depletion MOSFET ALD114835 ALD114835PC ALD114835SC ALD114935 ALD114935PA ALD114935SA

    2N3822

    Abstract: 2N3823 equivalent 2n3823 2N3822 equivalent 2N3821 2N3823 JANTX "Power over Ethernet"
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL J-FET DEPLETION MODE Equivalent to MIL-PRF-19500/375 DEVICES LEVELS 2N3821 2N3822 2N3823 MQ = JAN Equivalent


    Original     		PDF MIL-PRF-19500/375 2N3821 2N3822 2N3823 2N3823 2N3823 equivalent 2N3822 equivalent 2N3823 JANTX "Power over Ethernet"

    ALD114904ASAL

    Abstract: No abstract text available
    Text: ADVANCED LINEAR DEVICES, INC. TM e EPAD D LE AB EN ALD114804/ALD114804A/ALD114904/ALD114904A QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY VGS th = -0.40V GENERAL DESCRIPTION APPLICATIONS ALD114804/ALD114804A/ALD114904/ALD114904A are high precision monolithic


    Original     		PDF ALD114804/ALD114804A/ALD114904/ALD114904A characteris010 ALD114904ASAL

    CURRENT MIRRORs application

    Abstract: ALD114804 ALD114804A ALD114804APCL ALD114804ASCL ALD114804PCL ALD114804SCL ALD114904 ALD114904APAL ALD114904ASAL
    Text: ADVANCED LINEAR DEVICES, INC. e TM EPAD EN AB LE D ALD114804/ALD114804A/ALD114904/ALD114904A QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® MATCHED PAIR MOSFET ARRAY VGS th = -0.40V GENERAL DESCRIPTION APPLICATIONS ALD114804/ALD114804A/ALD114904/ALD114904A are monolithic quad/dual


    Original     		PDF ALD114804/ALD114804A/ALD114904/ALD114904A CURRENT MIRRORs application ALD114804 ALD114804A ALD114804APCL ALD114804ASCL ALD114804PCL ALD114804SCL ALD114904 ALD114904APAL ALD114904ASAL

    IXTH10N100D2

    Abstract: No abstract text available
    Text: Advance Technical Information IXTH10N100D2 IXTT10N100D2 Depletion Mode MOSFETs VDSX ID on RDS(on) = > ≤ 1000V 10A 1.5Ω Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH10N100D2 IXTT10N100D2 O-247 O-268 O-247) O-247 100ms 100ms 10N100D2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 1000V 1.6A 10Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000


    Original     		PDF IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 O-252 O-263 O-220) O-263 O-220 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED LINEAR DEVICES, INC. e TM EPAD EN AB LE D ALD114804/ALD114804A/ALD114904/ALD114904A QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY VGS th = -0.40V GENERAL DESCRIPTION APPLICATIONS ALD114804/ALD114804A/ALD114904/ALD114904A are high precision monolithic


    Original     		PDF ALD114804/ALD114804A/ALD114904/ALD114904A

    P-Channel Depletion Mosfets

    Abstract: mosfet 2N3796 2N3797 2N3796 MFE825 MFE3002 P-Channel Depletion Mosfet depletion mode mosfet 100 MHz MFE3003 N5484
    Text: MOSFETs Single Gate FIELD-EFFECT TRANSISTORS continued P-CHANNEL Enhancement MOSFETs MOSFETs are available in either depletion/enhancement or enhancement mode (in general, depletion/enhancement devices are operated in the depletion mode and are referred to as depletion devices). They are available in both N- and P-channel,


    OCR Scan     		PDF 2N5486 2N4416 2N4416A 2N5245 3N128* P-Channel Depletion Mosfets mosfet 2N3796 2N3797 2N3796 MFE825 MFE3002 P-Channel Depletion Mosfet depletion mode mosfet 100 MHz MFE3003 N5484

    BF900

    Abstract: TIS69 TIS68 P-Channel Depletion Mosfets BF905 TI570 TIS88 C2T205 TLS160 C2T206
    Text: Plastic FET’s « - Case Outlines Dual Gate M osfets for VHF/UHF| N-Channel Depletion Case V (B R )D S min. V B F9 00 C 2 T 204 C2T205 C2T206 X H H H C2T211 C2T212 C2T213 B F9 05


    OCR Scan     		PDF O-226AA TIS164 T0226A TIS68 2XT092 TIS69 TI570 A5T6449 BF900 P-Channel Depletion Mosfets BF905 TIS88 C2T205 TLS160 C2T206

    HP-8542A

    Abstract: MFE209 dual-gate HP8542A
    Text: MOTOROLA SC XSTRS/R F 12E D | b3b?254 N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTOR 00 öb 73 4 T I MFE209 . . . depletion mode dual gate transfer designed and characterized for UHF communications applications. • Package —


    OCR Scan     		PDF J-101) 4-t34 HP-8542A MFE209 dual-gate HP8542A

    MFE201

    Abstract: MFE203 MFE201 application notes MFE202 s163h dual-gate
    Text: '' N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED M O S FIELD-EFFECT TRANSISTORS • MFE201 thru . , . depletion mode dual gate transistors designed for VHF amplifier and mixer applications, MFE203 • MFE201 — VHF Amplifier MFE202 — VHF Mixer MFE203 — IF Am plifier


    OCR Scan     		PDF MFE201 MFE202 MFE203 MFE201, MFE201 MFE203 MFE201 application notes MFE202 s163h dual-gate