FQA9N90C
Abstract: No abstract text available
Text: TM FQA9N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQA9N90C
FQA9N90C
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FQPF9N90C
Abstract: FQP9N90C
Text: TM FQP9N90C/FQPF9N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQP9N90C/FQPF9N90C
O-220
O-220F
FQPF9N90C
FQP9N90C
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Untitled
Abstract: No abstract text available
Text: TM FQP9N90C/FQPF9N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQP9N90C/FQPF9N90C
O-22ner
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Untitled
Abstract: No abstract text available
Text: QFET FQA9N90C_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQA9N90C
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FQA9N90C
Abstract: F109
Text: QFET FQA9N90C_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQA9N90C
F109
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n-channel 900v 9a
Abstract: 900V N-Channel QFET FQA9N90C 900v mosfet F109
Text: QFET FQA9N90C 900V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQA9N90C
FQA9N90C
n-channel 900v 9a
900V N-Channel QFET
900v mosfet
F109
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n-channel 900v 9a
Abstract: FQA9N90C F109
Text: QFET FQA9N90C 900V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQA9N90C
FQA9N90C
n-channel 900v 9a
F109
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900v mosfet
Abstract: n-channel 900v 9a
Text: TSM9N90CN 900V N-Channel Power MOSFET TO-3PN PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 900 1.4 @ VGS =10V ID (A) 9.5 General Description The TSM9N90CN N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS
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TSM9N90CN
TSM9N90CN
900v mosfet
n-channel 900v 9a
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Untitled
Abstract: No abstract text available
Text: TSM9N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 900 1.4 @ VGS =10V ID (A) 9 General Description The TSM9N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM9N90
O-220
ITO-220
TSM9N90
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n-channel 900v 9a
Abstract: TSM9N90CZ TSM9N90 power mosfet 900v
Text: TSM9N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 900 1.4 @ VGS =10V ID (A) 9 General Description The TSM9N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM9N90
O-220
ITO-220
TSM9N90
n-channel 900v 9a
TSM9N90CZ
power mosfet 900v
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2sk2082
Abstract: 2SK2082-01 equivalent 2SK2082-01 n-channel 900v 9a
Text: 2SK2082-01 N-channel MOS-FET FAP-IIA Series 900V > Features - 1,4Ω 9A 150W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2082-01
2sk2082
2SK2082-01 equivalent
2SK2082-01
n-channel 900v 9a
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2SK2082-01 equivalent
Abstract: 2SK2082
Text: 2SK2082-01 N-channel MOS-FET FAP-IIA Series 900V > Features - 1,4Ω 9A 150W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2082-01
2SK2082-01 equivalent
2SK2082
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n-channel 900v 9a
Abstract: 2Sk2082 2SK2082-01 equivalent 2SK2082-01 900v mosfet
Text: 2SK2082-01 N-channel MOS-FET FAP-IIA Series 900V > Features - 1,4Ω 9A 150W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2082-01
n-channel 900v 9a
2Sk2082
2SK2082-01 equivalent
2SK2082-01
900v mosfet
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2sk2082
Abstract: 2SK2082-01 equivalent
Text: FU JI 2SK2082-01 N-channel MOS-FET FAP-IIA Series 900V 9A 150W > Outline Drawing > Features - 1,4Q High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2082-01
2sk2082
2SK2082-01 equivalent
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18n90
Abstract: ixfh18n90 B1 9A IXFV18N90P IXFH18N90P IXFV18N90PS PLUS220SMD
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH18N90P IXFV18N90P IXFV18N90PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 900V 18A Ω 600mΩ 300ns PLUS220 (IXFV) Symbol Test Conditions
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IXFH18N90P
IXFV18N90P
IXFV18N90PS
300ns
PLUS220
18N90P
18n90
ixfh18n90
B1 9A
IXFV18N90P
IXFH18N90P
IXFV18N90PS
PLUS220SMD
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9N90
Abstract: 0408 G Diode
Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable
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9N90L-T47-T
9N90G-T47-T
9N90L-T3P-T
9N90G-T3P-T
QW-R502-217
9N90
0408 G Diode
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Untitled
Abstract: No abstract text available
Text: AOTF9N90 900V, 9A N-Channel MOSFET General Description Product Summary The AOTF9N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss
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AOTF9N90
AOTF9N90
AOTF9N90L
O-220F
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ICE3B0365J
Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)
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SPP21N50C3
SPA21N50C3
SPI21N50C3
SPP16N50C3
SPA16N50C3
SPI16N50C3
SPW21N50C3
SPP12N50C3
SPA12N50C3
SPI12N50C3
ICE3B0365J
ICE3BR4765J
TDA16888
ICE2A765P2
ICE2PCS01G
ICE1PCS02G
ICE2B0565
ICE1PCS02
ICE2pcs02
IPI60R099CP
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Untitled
Abstract: No abstract text available
Text: AOK9N90 900V,9A N-Channel MOSFET General Description Product Summary The AOK9N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along
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AOK9N90
AOK9N90
O-247
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Untitled
Abstract: No abstract text available
Text: AOK9N90 900V,9A N-Channel MOSFET General Description Product Summary The AOK9N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along
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AOK9N90
AOK9N90
O-247
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 9N90-Q Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N90-Q uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable
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9N90-Q
9N90-Q
9N90L-TA3-T
9N90G-TA3-T
9N90L-T3P-T
9N90G-T3P-T
O-220
QW-R502-A93
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use
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9N90L-T47-T
9N90G-T47-T
9N90L-T3P-T
9N90G-T3P-T
9N90L-entarily,
QW-R502-217
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9n90
Abstract: N-channel MOSFET to-247 TO-220F1 IGSS
Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Preliminary Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable
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O-247
O-220F
O-220F1
QW-R502-217
9n90
N-channel MOSFET to-247
TO-220F1
IGSS
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use
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QW-R502-217
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