Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    N-CHANNEL 250V POWER MOSFET DPAK Search Results

    N-CHANNEL 250V POWER MOSFET DPAK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK6R9P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TK5R1P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL 250V POWER MOSFET DPAK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6N25

    Abstract: TO252-DPAK FDD6N25TM
    Text: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD6N25 FDU6N25 FDU6N25 FDD6N25TF FDD6N25TM 6N25 TO252-DPAK

    FDD6N25TM

    Abstract: FDD6N25 FDD6N25TF FDU6N25
    Text: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD6N25 FDU6N25 FDD6N25TM FDD6N25TF FDU6N25

    16nf25

    Abstract: No abstract text available
    Text: STD16NF25 STF16NF25 - STP16NF25 N-channel 250V - 0.195Ω - 13A - DPAK/TO-220/TO-220FP Low gate charge STripFET II Power MOSFET Features Type VDSS RDS on Max ID Pw STD16NF25 250V <0.235Ω 13A 90W STF16NF25 250V <0.235Ω 13A(1) 25W STP16NF25 250V <0.235Ω


    Original     		PDF STD16NF25 STF16NF25 STP16NF25 DPAK/TO-220/TO-220FP STP16NF25 O-220 O-220FP 16nf25

    16nf25

    Abstract: JESD97 STD16NF25 STF16NF25 STP16NF25 072 0043 STP-16nf25
    Text: STD16NF25 STF16NF25 - STP16NF25 N-channel 250V - 0.195Ω - 13A - DPAK/TO-220/TO-220FP Low gate charge STripFET II Power MOSFET Features Type VDSS RDS on Max ID Pw STD16NF25 250V <0.235Ω 13A 90W STF16NF25 250V <0.235Ω 13A(1) 25W STP16NF25 250V <0.235Ω


    Original     		PDF STD16NF25 STF16NF25 STP16NF25 DPAK/TO-220/TO-220FP STF16NF25 O-220 O-220FP 16nf25 JESD97 STD16NF25 STP16NF25 072 0043 STP-16nf25

    Untitled

    Abstract: No abstract text available
    Text: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V • Low gate charge ( typical 4.5 nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDD6N25 FDU6N25

    17NF25

    Abstract: No abstract text available
    Text: STI17NF25 - STD17NF25 STF17NF25 - STP17NF25 N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID PTOT STD17NF25 250V < 0.165Ω 17A 90W STI17NF25 250V < 0.165Ω 17A 90W


    Original     		PDF STI17NF25 STD17NF25 STF17NF25 STP17NF25 O-220/FP STI17NF25 STF17NF25 O-220 17NF25

    17NF2

    Abstract: STI17NF25
    Text: STI17NF25 - STD17NF25 STF17NF25 - STP17NF25 N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID PTOT STD17NF25 250V < 0.165Ω 17A 90W STI17NF25 250V < 0.165Ω 17A 90W


    Original     		PDF STI17NF25 STD17NF25 STF17NF25 STP17NF25 O-220/FP STI17NF25 STF17NF25 O-220 17NF2

    Untitled

    Abstract: No abstract text available
    Text: STI17NF25 - STD17NF25 STF17NF25 - STP17NF25 N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID PTOT STD17NF25 250V < 0.165Ω 17A 90W STI17NF25 250V < 0.165Ω 17A 90W


    Original     		PDF STI17NF25 STD17NF25 STF17NF25 STP17NF25 O-220/FP STI17NF25 STF17NF25 O-220

    17NF25

    Abstract: 17NF2 STI17NF25 STP17NF25 STD17NF25 STF17NF25 st 393 JESD97 17nf25 data
    Text: STI17NF25 - STD17NF25 STF17NF25 - STP17NF25 N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID PTOT STD17NF25 250V < 0.165Ω 17A 90W STI17NF25 250V < 0.165Ω 17A 90W


    Original     		PDF STI17NF25 STD17NF25 STF17NF25 STP17NF25 O-220/FP STI17NF25 STF17NF25 O-220 17NF25 17NF2 STP17NF25 STD17NF25 st 393 JESD97 17nf25 data

    17NF25

    Abstract: 17NF2 17nf25 data 17nF DSA0067465 STD17NF25 STI17NF25 STF17NF25 STP17NF25
    Text: STI17NF25 - STD17NF25 STF17NF25 - STP17NF25 N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID PTOT STD17NF25 250V < 0.165Ω 17A 90W STI17NF25 250V < 0.165Ω 17A 90W


    Original     		PDF STI17NF25 STD17NF25 STF17NF25 STP17NF25 O-220/FP STP17NF25 O-220 17NF25 17NF2 17nf25 data 17nF DSA0067465

    17NF2

    Abstract: No abstract text available
    Text: STI17NF25 - STD17NF25 STF17NF25 - STP17NF25 N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID PTOT STD17NF25 250V < 0.165Ω 17A 90W STI17NF25 250V < 0.165Ω 17A 90W


    Original     		PDF STI17NF25 STD17NF25 STF17NF25 STP17NF25 O-220/FP STI17NF25 STF17NF25 O-220 17NF2

    1313L1

    Abstract: STD17N25 STF17N25
    Text: STB17N25-1 - STD17N25 STF17N25 - STP17N25 N-CHANNEL 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK LOW GATE CHARGE STripFET II Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID PTOT STD17N25 250V < 0.165Ω 17A 90W 3 1 STP17N25 250V < 0.165Ω


    Original     		PDF STB17N25-1 STD17N25 STF17N25 STP17N25 O-220/FP STB17N25-1 STF17N25 O-220 1313L1 STD17N25

    STD17N25

    Abstract: STP17N25 STF17N25 330EP P17N25 STB17N25-1
    Text: STB17N25-1 - STD17N25 STF17N25 - STP17N25 N-CHANNEL 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK LOW GATE CHARGE STripFET II Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID PTOT STD17N25 250V < 0.165Ω 17A 90W 3 1 STP17N25 250V < 0.165Ω


    Original     		PDF STB17N25-1 STD17N25 STF17N25 STP17N25 O-220/FP STB17N25-1 STF17N25 O-220 STD17N25 STP17N25 330EP P17N25

    IRFR224A

    Abstract: No abstract text available
    Text: IRFR224B / IRFU224B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR224B IRFU224B IRFR224BTM FP001 O-252 IRFR224BTF FP001 IRFR224A

    IRFR234B

    Abstract: IRFU234B
    Text: IRFR234B / IRFU234B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR234B IRFU234B IRFU234B

    IRFR234B

    Abstract: IRFU234B
    Text: IRFR234B / IRFU234B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR234B IRFU234B IRFU234B

    Untitled

    Abstract: No abstract text available
    Text: IRFR234B / IRFU234B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR234B IRFU234B IRFR234BTM FP001 O-252 FP001

    Untitled

    Abstract: No abstract text available
    Text: IRFR224B / IRFU224B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR224B IRFU224B IRFU224B IRFU224 IRFU224A IRFU224BTU FP001 O-251

    IRFR214B

    Abstract: IRFU214B
    Text: IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR214B IRFU214B IRFU214B

    IRFR214BTF_FP001

    Abstract: No abstract text available
    Text: IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR214B IRFU214B IRFR214BTM FP001 O-252 IRFR214BTF FP001 IRFR214BTF_FP001

    IRFR214B

    Abstract: IRFU214B
    Text: IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR214B IRFU214B IRFU214B

    IRFR224B

    Abstract: IRFU224B
    Text: IRFR224B / IRFU224B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR224B IRFU224B IRFU224B

    Untitled

    Abstract: No abstract text available
    Text: IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR214B IRFU214B O-251 IRFU214B IRFU214BTU FP001

    IRFR214B

    Abstract: IRFU214B
    Text: IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR214B IRFU214B IRFU214B