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    N-CHANNEL 250V POWER MOSFET 40A Search Results

    N-CHANNEL 250V POWER MOSFET 40A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL 250V POWER MOSFET 40A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: STRH40N25FSY3 N-channel 250V - 0.084Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40N25FSY3 250V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		PDF STRH40N25FSY3 O-254AA 100kRad 34Mev/cm O-254AA

    mosfet 40a 200v

    Abstract: RH40N25FSY1 RH40N25FSY3 STRH40N25FSY1 STRH40N25FSY3
    Text: STRH40N25FSY3 N-channel 250V - 0.084Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40N25FSY3 250V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardened ■ Low total gate charge ■ Light weight


    Original     		PDF STRH40N25FSY3 O-254AA 100kRad 34Mev/cm mosfet 40a 200v RH40N25FSY1 RH40N25FSY3 STRH40N25FSY1 STRH40N25FSY3

    STRH40N25FSY3

    Abstract: RH40N25FSY1 RH40N25FSY3 STRH40N25FSY1
    Text: STRH40N25FSY3 N-channel 250V - 0.084Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA Features Type VDSS STRH40N25FSY3 250V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardened ■ Low total gate charge


    Original     		PDF STRH40N25FSY3 O-254AA 100kRad 34Mev/cm STRH40N25FSY3 RH40N25FSY1 RH40N25FSY3 STRH40N25FSY1

    96N25T

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTC96N25T Trench Gate Power MOSFET VDSS ID25 = 250V = 40A Ω ≤ 31mΩ Electrically Isolated Back Surface RDS(on) N-Channel Enhancement Mode Avalanche Rated ISOPLUS220 (IXTC) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		PDF IXTC96N25T ISOPLUS220 E153432 96N25T 0-11-07-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information Trench Gate Power MOSFET VDSS ID25 IXTC96N25T = 250V = 40A Ω ≤ 31mΩ Electrically Isolated Back Surface RDS(on) N-Channel Enhancement Mode Avalanche Rated ISOPLUS220 (IXTC) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		PDF IXTC96N25T ISOPLUS220 E153432 96N25T 0-11-07-A

    IRF P CHANNEL MOSFET 200V 20A

    Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
    Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω


    Original     		PDF RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252

    FL20KM-5A

    Abstract: THV100 fl20km5a
    Text: MITSUBISHI POWER MOSFET ARY FL20KM-5A IMIN PREL . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som HIGH-SPEED SWITCHING USE Nch POWER MOSFET FL20KM-5A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2


    Original     		PDF FL20KM-5A FL20KM-5A THV100 fl20km5a

    FL20KM-5A

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    FL20KM-5A

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    relay finder 45.61

    Abstract: reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415
    Text: 2295 Technical portal and online community for Design Engineers - www.element-14.com Relays & Solenoids Page 2343 2336 2310 2347 2298 2320 2346 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 Safety10 A331-1-C2A7M A331-1-C2-A73 24Vdc 110Vac 240Vac A331-1-C2-A7D relay finder 45.61 reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415

    schematic diagram 230VAC to 24VDC POWER SUPPLY

    Abstract: 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P
    Text: farnell.com element14.com 2501 Relays & Solenoids Page 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . . High Frequency Relays . . . . . . . . . . . . . . . . . . . . . Interface Relays . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element14 schematic diagram 230VAC to 24VDC POWER SUPPLY 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P

    1000w audio amplifier circuit diagram class D

    Abstract: 12v 1000W AUDIO AMPLIFIER CIRCUIT DIAGRAM 1000w rms audio amplifier circuit diagram layout 12v 1000W AUDIO AMPLIFIER SCHEMATIC 100W smps amplifier circuit diagram class D 1000w 1000w smps audio amplifier circuit diagram 1000w transistor audio amplifier circuit diagram SCHEMATIC 12v 1000w smps 1000W AUDIO AMPLIFIER class D
    Text: -1- IRAUDPS1 12V System Scalable 250W to1000W Audio Power Supply For Class D Audio Power Amplifiers Using the IR2085 self oscillating gate driver And Direct FETS IRF6648 By Manuel Rodríguez CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of


    Original     		PDF to1000W IR2085 IRF6648 7A/15A 1000w audio amplifier circuit diagram class D 12v 1000W AUDIO AMPLIFIER CIRCUIT DIAGRAM 1000w rms audio amplifier circuit diagram layout 12v 1000W AUDIO AMPLIFIER SCHEMATIC 100W smps amplifier circuit diagram class D 1000w 1000w smps audio amplifier circuit diagram 1000w transistor audio amplifier circuit diagram SCHEMATIC 12v 1000w smps 1000W AUDIO AMPLIFIER class D

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


    Original     		PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415

    1000w subwoofer amplifier PCB layout

    Abstract: IRS2085 IR2093 12v 1000W AUDIO AMPLIFIER amplifier circuit diagram class D 1000w 500w push-pull power schematic diagram 1000w smps audio amplifier circuit diagram 1000w SMPS CIRCUIT DIAGRAM 1000w rms audio amplifier circuit diagram layout 1000w amplifier circuit diagram
    Text: -1- IRAUDPS1 12V System Scalable 250W to1000W Audio Power Supply For Class D Audio Power Amplifiers Using the IR2085 self oscillating gate driver And Direct FETS IRF6648 By Manuel Rodríguez CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of


    Original     		PDF to1000W IR2085 IRF6648 4V/800W 1000w subwoofer amplifier PCB layout IRS2085 IR2093 12v 1000W AUDIO AMPLIFIER amplifier circuit diagram class D 1000w 500w push-pull power schematic diagram 1000w smps audio amplifier circuit diagram 1000w SMPS CIRCUIT DIAGRAM 1000w rms audio amplifier circuit diagram layout 1000w amplifier circuit diagram

    FCA50CC50

    Abstract: RL4R FBA50CA45 FBA50CA50 FBA75CA45 FBA75CA50 FCA75CC50 SF100 107506
    Text: MOSFET MODULE FCA50CC50 UL;E76102 （M） FCA50CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.（2 devices are serial connected with a fast recovery diode （trr≦100ns）reverse connected across each MOSFET.） The mounting base of the


    Original     		PDF FCA50CC50 E76102 FCA50CC50 trr100nsreverse 30max 31max 50msec10sec 50sec50msec RL4R FBA50CA45 FBA50CA50 FBA75CA45 FBA75CA50 FCA75CC50 SF100 107506

    2SK2532

    Abstract: 54573 EN5457
    Text: 2SK2532 Ordering number : EN5457 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2532 General-Purpose Switching Device Applications Features • • • Low ON-resistance. High-speed diode. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable


    Original     		PDF 2SK2532 EN5457 PW10s, 2SK2532 54573 EN5457

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE FS40SM-5 OUTLINE DRAWING D im ensions in mm 4.5 15.9MAX. , iw Tr 5.45 • V dss . 250V • TDS ON (MAX) . 0.0860


    OCR Scan     		PDF FS40SM-5

    MOSFET FK25SM

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FK25SM-5 HIGH-SPEED SWITCHING USE FK25SM-5 OUTLINE DRAWING Dimensions in mm w O '2 4 • VOSS . 250V • rDS ON (MAX) . 0 .1 6 Í 2


    OCR Scan     		PDF FK25SM-5 150ns 571Q-\2 571Q1 571Q2 MOSFET FK25SM

    K1397

    Abstract: Shindengen Electric Mfg LTD141 2SK1397 F40W25
    Text: L V X v U - X M ° 7 - M 0 S F E T LVX Series Power MOSFET OUTLINE DIMENSIONS 2SK 1397 Case MTO-3P [F40W25] 5.0 ± 250V 40A • M l < 3.3 a a •A * * [Unit ! mm] a -j l - E # « » Date code Ciss) 1f[C tîD ;W 7 7 .B A *§ M Î)'!/J ^ tV a & E IA J No.


    OCR Scan     		PDF 2SK1397 F40W25] K1397 K1397 Shindengen Electric Mfg LTD141 2SK1397 F40W25

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE FS40SM-5 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 A oh iriv h o d CNJ 4>3.2 CNJ 3 3 4.4 1.0 D (D 5.45 5.45 0.6 2.8 4 Q@© •V d s s . 250V >rDS (ON (MAX).0.086Í2


    OCR Scan     		PDF FS40SM-5

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE FS40SM-5 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 <t>3.2 5.45 0.6 4 Q w r V d s s .250V rDS ON (MAX) . 0.086Í2


    OCR Scan     		PDF FS40SM-5

    Untitled

    Abstract: No abstract text available
    Text: L V X v U - X /17-MOSFET XX LVX SERIES POWER MOSFET x>;\>zx>hm O U T L IN E D IM E N S IO N S 2SK1397 F40W25 250V 40a • Æ të S l R ATING S ■ $ ê 5 k Î iK ; * : / Ë $ § A b s o lu t e m M a x im u m R a t in g s 12 ^ Sym bol e Item ili f t S t o r a g e T e m p e ra tu re


    OCR Scan     		PDF /17-MOSFET 2SK1397 F40W25) 2SK1397 F4QW25)

    complementary MOSFET 2sk

    Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
    Text: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V


    OCR Scan     		PDF DC12V DC24V DC48V AC100V AC200V 0-60V) 2SJ487 2SK2816 2SJ488 2SJ489 complementary MOSFET 2sk transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series