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    N-CHANNEL 2.5V SOT223 Search Results

    N-CHANNEL 2.5V SOT223 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL 2.5V SOT223 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CBVK741B019

    Abstract: F63TNR F852 FDT439N PN2222A 63a30
    Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high


    Original     		PDF FDT439N CBVK741B019 F63TNR F852 FDT439N PN2222A 63a30

    Untitled

    Abstract: No abstract text available
    Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high


    Original     		PDF FDT439N

    63a17

    Abstract: FDT439N SOT223
    Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high


    Original     		PDF FDT439N 63a17 FDT439N SOT223

    F852 transistor

    Abstract: No abstract text available
    Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high


    Original     		PDF FDT439N F852 transistor

    ZVN4210

    Abstract: resh S10A fet ZVN4210G DSA003737
    Text: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4210G ISSUE 2 - NOVEMBER 1995 FEATURES * Low RDS on = 1.5Ω PARTMARKING DETAIL - ZVN4210 VGS= 10V 9V 8V 7V ID - Drain Current (Amps) 5 4 3 6V 5V 2 4V 3.5V 3V 2.5V 2V 10 1 1 2 3 4 5 6 7 8 9 VDS - Drain Source Voltage (Volts)


    Original     		PDF OT223 ZVN4210G ZVN4210 DD25V, ZVN4210 resh S10A fet ZVN4210G DSA003737

    NDT453N

    Abstract: NDT2955 SOT223 FDT3612 FDT459N FDT439N FDT457N FQT13N06 FQT13N06L NDT452AP HUF75309T3ST
    Text: Discrete MOSFET SOT-223 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SOT-223 N-Channel NDT453N 30 Single 0.028 0.042 - - 28 8 3 FDT439N 30 Single - 0.045 0.058 - 10.7 6.3


    Original     		PDF OT-223 OT-223 NDT453N FDT439N NDT451AN FDT459N FDT457N HUF75309T3ST HUFA75309T3ST HUF75307T3ST NDT453N NDT2955 SOT223 FDT3612 FDT459N FDT439N FDT457N FQT13N06 FQT13N06L NDT452AP HUF75309T3ST

    APM2054N

    Abstract: apm2054 APM2054N equivalent apm2054n datasheet transistor apm2054n equivalent transistor apm2054nv equivalent APM2054NV STD-020C APM205
    Text: APM2054NV N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/5A, RDS ON = 35mΩ (typ.) @ VGS= 10V RDS(ON)= 45mΩ (typ.) @ VGS= 4.5V RDS(ON)= 110mΩ (typ.) @ VGS= 2.5V • • • Super High Dense Cell Design Top View of SOT-223 Reliable and Rugged


    Original     		PDF APM2054NV OT-223 APM2054N APM2054N apm2054 APM2054N equivalent apm2054n datasheet transistor apm2054n equivalent transistor apm2054nv equivalent APM2054NV STD-020C APM205

    2054n

    Abstract: 2054-N ED750 APM2054N
    Text: APM2054NV N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/5A, RDS ON = 35mW (typ.) @ VGS= 10V RDS(ON)= 45mW (typ.) @ VGS= 4.5V G RDS(ON)= 110mW (typ.) @ VGS= 2.5V • • Reliable and Rugged • Lead Free Available (RoHS Compliant) D S Super High Dense Cell Design


    Original     		PDF APM2054NV 110mW OT-223 2054N O-252 2054-N ED750 APM2054N

    IC tl 072

    Abstract: APM2030ND STD-020C APM2030N
    Text: APM2030ND N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/6A , RDS ON =28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V • • • G D S Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged Lead Free Available (RoHS Compliant)


    Original     		PDF APM2030ND OT-89 2030N IC tl 072 APM2030ND STD-020C APM2030N

    2030N

    Abstract: APM2030N IC tl 072 STD-020C APM2030NV m2030n
    Text: APM2030NV N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/6A , RDS ON =28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOT-223


    Original     		PDF APM2030NV OT-223 2030N 2030N APM2030N IC tl 072 STD-020C APM2030NV m2030n

    APM2054N

    Abstract: APM2054N equivalent apm2054 transistor apm2054n equivalent APM2054N mosfet apm2054n datasheet A102 APM2054NV 0091BSC
    Text: APM2054NV N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/5A, RDS ON = 35mΩ (Typ.) @ VGS= 10V RDS(ON)= 45mΩ (Typ.) @ VGS= 4.5V G D RDS(ON)= 110mΩ (Typ.) @ VGS= 2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available


    Original     		PDF APM2054NV OT-223 APM2054N APM2054N APM2054N equivalent apm2054 transistor apm2054n equivalent APM2054N mosfet apm2054n datasheet A102 APM2054NV 0091BSC

    apm2054n

    Abstract: APM2054N equivalent apm2054n datasheet 2054N marking code IR SOT89 A3 22 2054-N apm2054 apm2054n to-252 APM 2054N 45580 jrc
    Text: APM2054N N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/12A, RDS ON =35mΩ(typ.) @ VGS=10V RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=110mΩ(typ.) @ VGS=2.5V • • • Super High Dense Cell Design 1 2 3 G D S High Power and Current Handling Capability


    Original     		PDF APM2054N 0V/12A, O-252, OT-89 OT-223 O-252 OT-89 OT-223 apm2054n APM2054N equivalent apm2054n datasheet 2054N marking code IR SOT89 A3 22 2054-N apm2054 apm2054n to-252 APM 2054N 45580 jrc

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


    Original     		PDF O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G

    2055N

    Abstract: APM2055N td 2003 ap MARKING 93 SOT-223 A1 SOT-223 MOSFET APM2055N equivalent A102 J-STD-020A TO-252 N-channel MOSFET M2055
    Text: APM2055N N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/12A, RDS ON =55mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V RDS(ON)=140mΩ(typ.) @ VGS=2.5V • • • Super High Dense Cell Design 1 2 3 G D S High Power and Current Handling Capability


    Original     		PDF APM2055N 0V/12A, O-252 OT-223 O-252 OT-223 2055N 2055N APM2055N td 2003 ap MARKING 93 SOT-223 A1 SOT-223 MOSFET APM2055N equivalent A102 J-STD-020A TO-252 N-channel MOSFET M2055

    hall sensor sot-143

    Abstract: FSP3126 fsp210 sot-23-6 step down REGULATOR FSP2102 FSP393 FSP1084 FSH4913 step down Voltage Regulator sop8 step down Voltage Regulator sop8 2a
    Text: Selection Guide of Foslink Semiconductor Co. •Hall Sensor Low Power Omnipolar single output - Contact-less Application Part Number Operating Point Bop(Gauss) Brp(Gauss) Operating Voltage Output Current FSH4913 Open Drain 2.4V~5.5V 1mA ±55 ±45 -40~85 FSH4917 Open Drain


    Original     		PDF FSH4913 FSH4917 FSH41 OT23-3L TSOT23-3L OT23-6L hall sensor sot-143 FSP3126 fsp210 sot-23-6 step down REGULATOR FSP2102 FSP393 FSP1084 step down Voltage Regulator sop8 step down Voltage Regulator sop8 2a

    FSP3131

    Abstract: FSP3126 FSP3304 3122 adj ldo SOT23 ENABLE msa MSOP8 step down Voltage Regulator sop8 2a FSP 3122 fsp312 fsp3121
    Text: Selection Guide of Foslink Semiconductor Co. •Hall Sensor Low Power Omnipolar single output - Contact-less Application Additional Operating Part Output Current Features Voltage Number Operating Point Bop(Gauss) Brp(Gauss) Operating Temp. Package Availability


    Original     		PDF FSH4913 OT23-3L TSOT23-3L FSH4917 OT23-6L FSH41 OT89-3L OT23-3L/5L/6L O220-3L/5L QFN16 FSP3131 FSP3126 FSP3304 3122 adj ldo SOT23 ENABLE msa MSOP8 step down Voltage Regulator sop8 2a FSP 3122 fsp312 fsp3121

    tl2431

    Abstract: sp34063 XRP7657 TL243 SP6260 Step-up 12V to 19V 5A XRP7740 SP2525A XRP29302 sp7121
    Text: Power Management Power Conversion Switching Regulators Switching Controllers LDOs & Regulators System Controls Power Switches Voltage References Supervisors LED Lighting Regulators Controllers Current Drivers PowerXR Digital Switching Controllers 2010 www.exar.com


    Original     		PDF XRP7704 XRP7708 XRP7740 tl2431 sp34063 XRP7657 TL243 SP6260 Step-up 12V to 19V 5A XRP7740 SP2525A XRP29302 sp7121

    3-pin switch PWM sot89

    Abstract: 8L-10L SPX29152
    Text: DC to DC Buck and Boost Regulators Input Voltage Range Output Voltage Range Buck 6.0V to 7.5V Buck SP6641 Boost Part Number Type SP6639 SP6640 IOUT Efficiency adj; 5.0V 100mA 10µA 91% ✔ 4.0V to 7.5V adj; 3.3V 100mA 10µA 87% ✔ 0.9V to 4.5V 3.3V or 5.0V


    Original     		PDF SP6639 100mA SP6640 SP6641 200mA 500mA 180mA SP6644 SP6645 3-pin switch PWM sot89 8L-10L SPX29152

    SP6654

    Abstract: SPX29152
    Text: Power Management Programmable Power Management Systems Power Modules Universal PMICs Power Conversion Switching Regulators Switching Controllers LDOs & DDR System Controls Power Switches Voltage References Supervisors LED Lighting Switching Regulators Linear Drivers


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: LT3029 Dual 500mA/500mA Low Dropout, Low Noise, Micropower Linear Regulator DESCRIPTION FEATURES n n n n n n n n n n n n n Output Current: 500mA per Channel Low Dropout Voltage: 300mV Low Noise: 20 VRMS 10Hz to 100kHz Low Quiescent Current: 55μA per Channel


    Original     		PDF LT3029 500mA/500mA 500mA 300mV 100kHz) TSSOP-16E LT3080/ LT3080-1 300mV O-220,

    FDN336P

    Abstract: SOIC-16
    Text: N ovem ber 1998 FAIRCHILD S E M IC O N D U C T O R TM FDN336P Single P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    OCR Scan     		PDF FDN336P FDN336P SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD S E M IC O N D U C T O R November 1998 tm FDS6875 Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified M OSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to


    OCR Scan     		PDF FDS6875

    S 0240

    Abstract: No abstract text available
    Text: PAIRCHII-D November 1998 M IC D N D U C T Q R ! FDN340P Single P-Channel 2.5V Specified Pow erTrench MOSFET Features General D escription This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    OCR Scan     		PDF FDN340P S 0240

    FDN340P

    Abstract: No abstract text available
    Text: FAIRCHILD November 1998 M IC D N D U C T D R - FDN340P Single P-Channel 2.5V Specified PowerTrench MOSFET F eatures G eneral Description This P-Channel 2.5V specified M OSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    OCR Scan     		PDF FDN340P R0-0030 RO-0030 FDN340P