CBVK741B019
Abstract: F63TNR F852 FDT439N PN2222A 63a30
Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high
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FDT439N
CBVK741B019
F63TNR
F852
FDT439N
PN2222A
63a30
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Untitled
Abstract: No abstract text available
Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high
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FDT439N
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63a17
Abstract: FDT439N SOT223
Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high
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FDT439N
63a17
FDT439N
SOT223
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F852 transistor
Abstract: No abstract text available
Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high
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FDT439N
F852 transistor
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ZVN4210
Abstract: resh S10A fet ZVN4210G DSA003737
Text: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4210G ISSUE 2 - NOVEMBER 1995 FEATURES * Low RDS on = 1.5Ω PARTMARKING DETAIL - ZVN4210 VGS= 10V 9V 8V 7V ID - Drain Current (Amps) 5 4 3 6V 5V 2 4V 3.5V 3V 2.5V 2V 10 1 1 2 3 4 5 6 7 8 9 VDS - Drain Source Voltage (Volts)
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OT223
ZVN4210G
ZVN4210
DD25V,
ZVN4210
resh
S10A fet
ZVN4210G
DSA003737
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NDT453N
Abstract: NDT2955 SOT223 FDT3612 FDT459N FDT439N FDT457N FQT13N06 FQT13N06L NDT452AP HUF75309T3ST
Text: Discrete MOSFET SOT-223 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SOT-223 N-Channel NDT453N 30 Single 0.028 0.042 - - 28 8 3 FDT439N 30 Single - 0.045 0.058 - 10.7 6.3
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OT-223
OT-223
NDT453N
FDT439N
NDT451AN
FDT459N
FDT457N
HUF75309T3ST
HUFA75309T3ST
HUF75307T3ST
NDT453N
NDT2955 SOT223
FDT3612
FDT459N
FDT439N
FDT457N
FQT13N06
FQT13N06L
NDT452AP
HUF75309T3ST
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APM2054N
Abstract: apm2054 APM2054N equivalent apm2054n datasheet transistor apm2054n equivalent transistor apm2054nv equivalent APM2054NV STD-020C APM205
Text: APM2054NV N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/5A, RDS ON = 35mΩ (typ.) @ VGS= 10V RDS(ON)= 45mΩ (typ.) @ VGS= 4.5V RDS(ON)= 110mΩ (typ.) @ VGS= 2.5V • • • Super High Dense Cell Design Top View of SOT-223 Reliable and Rugged
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APM2054NV
OT-223
APM2054N
APM2054N
apm2054
APM2054N equivalent
apm2054n datasheet
transistor apm2054n equivalent
transistor apm2054nv equivalent
APM2054NV
STD-020C
APM205
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2054n
Abstract: 2054-N ED750 APM2054N
Text: APM2054NV N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/5A, RDS ON = 35mW (typ.) @ VGS= 10V RDS(ON)= 45mW (typ.) @ VGS= 4.5V G RDS(ON)= 110mW (typ.) @ VGS= 2.5V • • Reliable and Rugged • Lead Free Available (RoHS Compliant) D S Super High Dense Cell Design
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APM2054NV
110mW
OT-223
2054N
O-252
2054-N
ED750
APM2054N
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IC tl 072
Abstract: APM2030ND STD-020C APM2030N
Text: APM2030ND N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/6A , RDS ON =28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V • • • G D S Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged Lead Free Available (RoHS Compliant)
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APM2030ND
OT-89
2030N
IC tl 072
APM2030ND
STD-020C
APM2030N
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2030N
Abstract: APM2030N IC tl 072 STD-020C APM2030NV m2030n
Text: APM2030NV N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/6A , RDS ON =28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOT-223
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APM2030NV
OT-223
2030N
2030N
APM2030N
IC tl 072
STD-020C
APM2030NV
m2030n
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APM2054N
Abstract: APM2054N equivalent apm2054 transistor apm2054n equivalent APM2054N mosfet apm2054n datasheet A102 APM2054NV 0091BSC
Text: APM2054NV N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/5A, RDS ON = 35mΩ (Typ.) @ VGS= 10V RDS(ON)= 45mΩ (Typ.) @ VGS= 4.5V G D RDS(ON)= 110mΩ (Typ.) @ VGS= 2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available
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APM2054NV
OT-223
APM2054N
APM2054N
APM2054N equivalent
apm2054
transistor apm2054n equivalent
APM2054N mosfet
apm2054n datasheet
A102
APM2054NV
0091BSC
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apm2054n
Abstract: APM2054N equivalent apm2054n datasheet 2054N marking code IR SOT89 A3 22 2054-N apm2054 apm2054n to-252 APM 2054N 45580 jrc
Text: APM2054N N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/12A, RDS ON =35mΩ(typ.) @ VGS=10V RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=110mΩ(typ.) @ VGS=2.5V • • • Super High Dense Cell Design 1 2 3 G D S High Power and Current Handling Capability
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APM2054N
0V/12A,
O-252,
OT-89
OT-223
O-252
OT-89
OT-223
apm2054n
APM2054N equivalent
apm2054n datasheet
2054N
marking code IR SOT89 A3 22
2054-N
apm2054
apm2054n to-252
APM 2054N
45580 jrc
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P70N02LDG
Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG
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O-263
P45N02LSG
P45N03LTG
P75N02LSG
P75N02LTG
P0903BSG
P0903BTG
P3055LSG
P3055LTG
P50N03LSG
P70N02LDG
p0603bdg
P60N03LDG
PA102FDG
P2503NPG
P45N02LDG
P0603BD
P1703BDG
P0403BDG
P3004ND5G
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2055N
Abstract: APM2055N td 2003 ap MARKING 93 SOT-223 A1 SOT-223 MOSFET APM2055N equivalent A102 J-STD-020A TO-252 N-channel MOSFET M2055
Text: APM2055N N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/12A, RDS ON =55mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V RDS(ON)=140mΩ(typ.) @ VGS=2.5V • • • Super High Dense Cell Design 1 2 3 G D S High Power and Current Handling Capability
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APM2055N
0V/12A,
O-252
OT-223
O-252
OT-223
2055N
2055N
APM2055N
td 2003 ap
MARKING 93 SOT-223
A1 SOT-223 MOSFET
APM2055N equivalent
A102
J-STD-020A
TO-252 N-channel MOSFET
M2055
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hall sensor sot-143
Abstract: FSP3126 fsp210 sot-23-6 step down REGULATOR FSP2102 FSP393 FSP1084 FSH4913 step down Voltage Regulator sop8 step down Voltage Regulator sop8 2a
Text: Selection Guide of Foslink Semiconductor Co. •Hall Sensor Low Power Omnipolar single output - Contact-less Application Part Number Operating Point Bop(Gauss) Brp(Gauss) Operating Voltage Output Current FSH4913 Open Drain 2.4V~5.5V 1mA ±55 ±45 -40~85 FSH4917 Open Drain
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FSH4913
FSH4917
FSH41
OT23-3L
TSOT23-3L
OT23-6L
hall sensor sot-143
FSP3126
fsp210
sot-23-6 step down REGULATOR
FSP2102
FSP393
FSP1084
step down Voltage Regulator sop8
step down Voltage Regulator sop8 2a
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FSP3131
Abstract: FSP3126 FSP3304 3122 adj ldo SOT23 ENABLE msa MSOP8 step down Voltage Regulator sop8 2a FSP 3122 fsp312 fsp3121
Text: Selection Guide of Foslink Semiconductor Co. •Hall Sensor Low Power Omnipolar single output - Contact-less Application Additional Operating Part Output Current Features Voltage Number Operating Point Bop(Gauss) Brp(Gauss) Operating Temp. Package Availability
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FSH4913
OT23-3L
TSOT23-3L
FSH4917
OT23-6L
FSH41
OT89-3L
OT23-3L/5L/6L
O220-3L/5L
QFN16
FSP3131
FSP3126
FSP3304
3122 adj
ldo SOT23 ENABLE
msa MSOP8
step down Voltage Regulator sop8 2a
FSP 3122
fsp312
fsp3121
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tl2431
Abstract: sp34063 XRP7657 TL243 SP6260 Step-up 12V to 19V 5A XRP7740 SP2525A XRP29302 sp7121
Text: Power Management Power Conversion Switching Regulators Switching Controllers LDOs & Regulators System Controls Power Switches Voltage References Supervisors LED Lighting Regulators Controllers Current Drivers PowerXR Digital Switching Controllers 2010 www.exar.com
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XRP7704
XRP7708
XRP7740
tl2431
sp34063
XRP7657
TL243
SP6260
Step-up 12V to 19V 5A
XRP7740
SP2525A
XRP29302
sp7121
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3-pin switch PWM sot89
Abstract: 8L-10L SPX29152
Text: DC to DC Buck and Boost Regulators Input Voltage Range Output Voltage Range Buck 6.0V to 7.5V Buck SP6641 Boost Part Number Type SP6639 SP6640 IOUT Efficiency adj; 5.0V 100mA 10µA 91% ✔ 4.0V to 7.5V adj; 3.3V 100mA 10µA 87% ✔ 0.9V to 4.5V 3.3V or 5.0V
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SP6639
100mA
SP6640
SP6641
200mA
500mA
180mA
SP6644
SP6645
3-pin switch PWM sot89
8L-10L
SPX29152
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SP6654
Abstract: SPX29152
Text: Power Management Programmable Power Management Systems Power Modules Universal PMICs Power Conversion Switching Regulators Switching Controllers LDOs & DDR System Controls Power Switches Voltage References Supervisors LED Lighting Switching Regulators Linear Drivers
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Untitled
Abstract: No abstract text available
Text: LT3029 Dual 500mA/500mA Low Dropout, Low Noise, Micropower Linear Regulator DESCRIPTION FEATURES n n n n n n n n n n n n n Output Current: 500mA per Channel Low Dropout Voltage: 300mV Low Noise: 20 VRMS 10Hz to 100kHz Low Quiescent Current: 55μA per Channel
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LT3029
500mA/500mA
500mA
300mV
100kHz)
TSSOP-16E
LT3080/
LT3080-1
300mV
O-220,
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FDN336P
Abstract: SOIC-16
Text: N ovem ber 1998 FAIRCHILD S E M IC O N D U C T O R TM FDN336P Single P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the
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FDN336P
FDN336P
SOIC-16
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Untitled
Abstract: No abstract text available
Text: FAIRCHILD S E M IC O N D U C T O R November 1998 tm FDS6875 Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified M OSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to
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FDS6875
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S 0240
Abstract: No abstract text available
Text: PAIRCHII-D November 1998 M IC D N D U C T Q R ! FDN340P Single P-Channel 2.5V Specified Pow erTrench MOSFET Features General D escription This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the
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FDN340P
S 0240
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FDN340P
Abstract: No abstract text available
Text: FAIRCHILD November 1998 M IC D N D U C T D R - FDN340P Single P-Channel 2.5V Specified PowerTrench MOSFET F eatures G eneral Description This P-Channel 2.5V specified M OSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the
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FDN340P
R0-0030
RO-0030
FDN340P
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